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by 1N5820/D
SEMICONDUCTOR TECHNICAL DATA
. . . employing the Schottky Barrier principle in a large area metaltosilicon
power diode. Stateoftheart geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in lowvoltage, highfrequency inverters, free
wheeling diodes, and polarity protection diodes.
1N5820 and 1N5822 are
Motorola Preferred Devices
Extremely Low vF
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220C
Max. for 10 Seconds, 1/16 from case
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a RL suffix to the
part number
Polarity: Cathode indicated by Polarity Band
Marking: 1N5820, 1N5821, 1N5822
CASE 26703
PLASTIC
MAXIMUM RATINGS
Rating
Symbol
1N5820
1N5821
1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
NonRepetitive Peak Reverse Voltage
VRSM
24
36
48
VR(RMS)
14
21
28
RMS Reverse Voltage
Average Rectified Forward Current (2)
VR(equiv)
0.2 VR(dc), TL = 95C
(RJA = 28C/W, P.C. Board Mounting, see Note 2)
IO
Ambient Temperature
Rated VR(dc), PF(AV) = 0
RJA = 28C/W
TA
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75C)
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
3.0
90
85
80
IFSM
80 (for one cycle)
TJ, Tstg
*65 to +125
TJ(pk)
150
*THERMAL CHARACTERISTICS (Note 2)
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
RJA
28
C/W
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32 from case.
* Indicates JEDEC Registered Data for 1N582022.
Designers Data for Worst Case Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves representing boundaries on device characteristics are given to facilitate worst case design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 2
Device
Rectifier
Motorola, Inc.
1996 Data
*ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) (2)
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
VF
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
TL = 25C
TL = 100C
iR
1N5820
1N5821
1N5822
0.370
0.475
0.850
0.380
0.500
0.900
0.390
0.525
0.950
2.0
20
2.0
20
2.0
20
Unit
V
mA
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32 from case.
* Indicates JEDEC Registered Data for 1N582022.
NOTE 1 DETERMINING MAXIMUM RATINGS
The data of Figures 1, 2, and 3 is based upon dc conditions. For use
in common rectifier circuits, Table 1 indicates suggested factors for
an equivalent dc voltage to use for conservative design, that is:
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
above 0.1 VRWM. Proper derating may be accomplished by use of
equation (1).
TA(max) = TJ(max)
RJAPF(AV)
RJAPR(AV)
where TA(max) = Maximum allowable ambient temperature
TJ(max) = Maximum allowable junction temperature
(125C or the temperature at which thermal
runaway occurs, whichever is lowest)
PF(AV) = Average forward power dissipation
PR(AV) = Average reverse power dissipation
RJA = Junctiontoambient thermal resistance
VR(equiv) = V(FM)
(1)
RJAPR(AV)
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
VR(equiv) = (1.41) (10) (0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 108C
@ VR = 9.2 V and RJA = 40C/W.
Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W
(2)
Substituting equation (2) into equation (1) yields:
TA(max) = TR
RJAPF(AV)
(4)
The factor F is derived by considering the properties of the various
rectifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: Find TA(max) for 1N5821 operated in a 12volt dc supply using a bridge circuit with capacitive filter such that IDC = 2.0 A
(IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RJA =
40C/W.
Figures 1, 2, and 3 permit easier use of equation (1) by taking
reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature as determined by
equation (2).
TR = TJ(max)
F
I (FM)
I (AV)
10 and IF(AV) 1.0 A.
Step 4. Find TA(max) from equation (3).
TA(max) = 108
(0.85) (40) = 74C.
**Values given are for the 1N5821. Power is slightly lower for the
1N5820 because of its lower forward voltage, and higher for the
1N5822. Variations will be similar for the MBRprefix devices, using
PF(AV) from Figure 7.
(3)
Inspection of equations (2) and (3) reveals that TR is the ambient
temperature at which thermal runaway occurs or where TJ = 125C,
when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a
difference in the rate of change of the slope in the vicinity of 115C.
Table 1. Values for Factor F
Circuit
Full Wave, Bridge
Full Wave,
Center Tapped*
Load
Resistive
Capacitive*
Resistive
Capacitive
Resistive
Capacitive
Sine Wave
0.5
1.3
0.5
0.65
1.0
1.3
Square Wave
0.75
1.5
0.75
0.75
1.5
1.5
*Note that VR(PK)
Half Wave
2.0 Vin(PK). Use line to center tap voltage for Vin.
Rectifier Device Data
20
125
15
10
8.0
115
105
RqJA (C/W) = 70
50
95
40
28
85
TR , REFERENCE TEMPERATURE (C)
TR , REFERENCE TEMPERATURE (C)
125
75
15
10
115
8.0
105
RqJA (C/W) = 70
50
95
40
28
85
75
2.0
3.0
4.0
5.0
7.0
10
20
15
3.0
5.0
7.0
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Maximum Reference Temperature
1N5820
Figure 2. Maximum Reference Temperature
1N5821
30
40
20
R qJL , THERMAL RESISTANCE
JUNCTIONTOLEAD (C/W)
10
8.0
105
RqJA (C/W) = 70
95
50
40
85
MAXIMUM
TYPICAL
35
15
115
30
25
20
15
10
BOTH LEADS TO HEAT SINK,
EQUAL LENGTH
5.0
28
75
4.0
4.0
VR, REVERSE VOLTAGE (VOLTS)
125
TR , REFERENCE TEMPERATURE (C)
20
0
5.0
7.0
10
15
20
30
40
1/8
2/8
3/8
4/8
5/8
6/8
7/8
VR, REVERSE VOLTAGE (VOLTS)
L, LEAD LENGTH (INCHES)
Figure 3. Maximum Reference Temperature
1N5822
Figure 4. SteadyState Thermal Resistance
Rectifier Device Data
1.0
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.5
0.3
0.2
0.1
The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once
steadystate conditions are achieved. Using the measured value of TL, the junction temperature may be determined by:
TJ = TL + DTJL
LEAD LENGTH = 1/4
0.03
0.02
0.01
0.5
1.0
2.0
5.0
10
Ppk
DUTY CYCLE = tp/t1
PEAK POWER, Ppk, is peak of an
TIME
equivalent square power pulse.
t1
TJL = Ppk RJL [D + (1 D) r(t1 + tp) + r(tp) r(t1)] where:
TJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time
t1 + tp, etc.
0.05
0.2
Ppk
tp
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
t, TIME (ms)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
Figure 5. Thermal Response
10
7.0
5.0
NOTE 3 APPROXIMATE THERMAL CIRCUIT MODEL
SINE WAVE
I
(FM)
p (Resistive Load)
I
(AV)
RS(A)
3.0
2.0
1.0
0.7
0.5
Capacitive
Loads
dc
TJ 125C
0.1
0.3
RL(K)
RJ(K)
RS(K)
TA(K)
PD
TC(A)
TJ
TC(K)
TL(K)
SQUARE WAVE
0.2
0.2
RJ(A)
TA(A)
TL(A)
5.0
10
20
0.3
0.1
RL(A)
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
IF(AV), AVERAGE FORWARD CURRENT (AMP)
Figure 6. Forward Power Dissipation 1N582022
Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total
lead length, lowest values occur when one side of the rectifier is
brought as close as possible to the heat sink. Terms in the model
signify:
TA = Ambient Temperature
TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
RS = Thermal Resistance, Heat Sink to Ambient
RL = Thermal Resistance, Lead to Heat Sink
RJ = Thermal Resistance, Junction to Case
PD = Total Power Dissipation = PF + PR
PF = Forward Power Dissipation
PR = Reverse Power Dissipation
(Subscripts (A) and (K) refer to anode and cathode sides, respectively.) Values for thermal resistance components are:
RL = 42C/W/in typically and 48C/W/in maximum
RJ = 10C/W typically and 16C/W maximum
The maximum lead temperature may be found as follows:
TL = TJ(max)
n TJL
RJL PD
where n TJL
*
[
Mounting Method 1
P.C. Board where available
copper surface is small.
NOTE 2 MOUNTING DATA
Data shown for thermal resistance junctiontoambient (RJA)
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
TYPICAL VALUES FOR RJA IN STILL AIR
1/8
1/4
1/2
3/4
RJA
50
51
53
55
C/W
58
59
61
63
C/W
28
P.C. Board with
21/2 x 21/2
copper surface.
L = 1/2
Mounting Method 2
Lead Length, L (in)
Mounting
Method
Mounting Method 3
C/W
BOARD GROUND
PLANE
VECTOR PUSHIN
TERMINALS T28
Rectifier Device Data
100
IFSM , PEAK HALFWAVE CURRENT (AMP)
50
30
20
TJ = 100C
7.0
5.0
50
TL = 75C
f = 60 Hz
30
20
1 CYCLE
SURGE APPLIED AT RATED LOAD CONDITIONS
10
25C
3.0
2.0
1.0
3.0
5.0 7.0 10
20
30
50 70 100
NUMBER OF CYCLES
2.0
Figure 8. Maximum NonRepetitive Surge
Current
1.0
100
0.7
50
0.5
20
TJ = 125C
10
IR , REVERSE CURRENT (mA)
i F, INSTANTANEOUS FORWARD CURRENT (AMP)
10
70
0.3
0.2
0.1
0.07
0.05
100C
5.0
2.0
75C
1.0
0.5
0.2
25C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.05
1N5820
1N5821
1N5822
0.02
Figure 7. Typical Forward Voltage
0.01
0
4.0
8.0
12
16
20
24
28
32
36
40
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
500
Figure 9. Typical Reverse Current
1N5820
300
NOTE 4 HIGH FREQUENCY OPERATION
200
1N5821
TJ = 25C
f = 1.0 MHz
100
1N5822
70
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and
stored charge. Satisfactory circuit analysis work may be performed
by using a model consisting of an ideal diode in parallel with a
variable capacitance. (See Figure 11.)
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
Rectifier Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
1
DIM
A
B
D
K
INCHES
MIN
MAX
0.370
0.380
0.190
0.210
0.048
0.052
1.000
MILLIMETERS
MIN
MAX
9.40
9.65
4.83
5.33
1.22
1.32
25.40
STYLE 1:
PIN 1. CATHODE
2. ANODE
K
2
CASE 26703
ISSUE C
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola
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1N5820/D
Rectifier Device
Data
