SOI SENSING TECHNOLOGIES FOR HARSH ENVIRONMENT

F. Udrea1,2, S.Z. Ali1, M. Brezeanu3, V. Dumitru3, O. Buiu3, I. Poenaru1,

M.F. Chowdhury1, A. De Luca2 and J.W. Gardner1,4
1

Cambridge CMOS Sensors Ltd, 59 St Andrew's Street, Cambridge CB2 3BZ, UK

Univ. of Cambridge, CAPE Building, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK
3
Honeywell Romania SRL, ACS Sensors & Wireless Laboratory Bucharest,
169A Calea Floreasca, Building A, 014459, Bucharest, Romania
4
University of Warwick, School of Engineering, Coventry CV4 7AL, UK
E-mail: [email protected]

AbstractThis paper reviews and addresses certain

aspects of Silicon-On-Insulator (SOI) technologies for
a harsh environment. The paper first describes the
need for specialized sensors in applications such as
(i) domestic and other small-scale boilers, (ii) CO2
Capture and Sequestration, (iii) oil & gas storage and
transportation, and (iv) automotive. We describe in
brief the advantages and special features of SOI
technology for sensing applications requiring
temperatures in excess of the typical bulk silicon
junction temperatures of 150oC. Finally we present
the concepts, structures and prototypes of simple and
smart micro-hotplate and Infra Red (IR) based
emitters for NDIR (Non Dispersive IR) gas sensors in
harsh environments.
Keywords: Silicon on Insulator (SOI), CMOS
technology for sensing applications, System in
Package (SiP).

humidity (i.e. water vapour) are essential. At the

same time, measuring toxic gases such as H2S
has become an important issue for avoiding
pollution and poisoning and in general for
environment safety.
Combustion optimization in domestic and
other small-scale boilers, CO2 Capture and
Sequestration (CCS) and deep-well oil and gas
exploration, oil and gas storage and
transportation, combustion optimization and
emission control in automotive, aerospace, and
marine are examples of applications that require
sensors operating in various harsh environment
conditions.
(i)
Combustion optimization in domestic
and other small-scale boilers
Currently, the domestic boilers market is
divided between the HE (Highly Efficient
Premix Condensing) and the SE (Standard
Efficient-Atmospheric) systems. The HE boilers
are based on the premix system (1:1 gas/air ratio),
which is expected to become the dominant
system in the near future. The 1:1 gas/air control
ensures safe handling (if there is no air, then no
gas will be pulled out from the system), a fast
dynamic response, low cost and modulation with
premix burner [1]. It also leads to lower gas
emissions. The novelty of the HE boilers is their
auto-adaptability feature. This is achieved, on the
one hand, by inserting a CO2 sensor above the
burner (Fig. 1), which is employed to measure or
detect the combustion quality, and on the other,
by trimming the gas flow via a motor driven
throttle. Besides the self adaptive control (at
installation and over lifetime), the combustion
quality sensing that is performed by the CO2
sensor also leads to higher efficiency and to a
wider gas range measurement.
The CO2 sensor has to cope with operating

1. INTRODUCTION-HARSH
ENVIRONMENT APPLICATIONS
Sensors operating in a harsh environment
need to cope with one or more of the following
extreme conditions: high operating temperature
(>150oC), high pressure (>10 bar), significant
vibration, high humidity, high radiation levels,
aggressive media (corrosive, toxic, explosive),
electromagnetic spikes.
Research in harsh environment sensors is
driven both by both the current market needs and
by the strong legislation requirements regarding
the quality of the environmental ambient air. The
upper safety limits for emission gases have
gradually decreased in the last decade. For this
reason, industrial process, automotive, aerospace
and marine combustion control for efficient
energy generation are performed based on
monitoring the input and output concentration of
the gases participating (and resulting from) the
combustion reaction. Thus, measuring gases such
as O2, CO2, CO, CXHY, NOX, together with
978-1-4673-0738-3/12/$31.00 2012 IEEE
3

temperatures of up to 225oC and water vapour

presence in the gas composition above 10% in
volume. HE boilers, taking benefit of the flue
condensation, have also the option for gas
measurement after water vapour condensation.
Thus, it is possible to reduce the working
temperature, but the relative humidity can be as
high as 100%. Therefore, the requirement
emerges to measure temperature and water
vapour level in parallel with CO2 concentration.
At the same time, the total gas flow also needs to
be measured, for maximum improvement in the
combustion process efficiency. Fig.1 shows
schematically the placement of different sensors
within a domestic boiler.

10 years, and significantly increased reliability.

Moreover, due to its full CMOS compatibility
and owing to its intelligent design, the SOI SIP
will offer low power consumption and will
decrease the overall boiler cost. It is interesting
to note that the boiler market is huge and
increasing. More than 5 million domestic boilers
are currently sold per year in EU and the growth
rate is estimated to be around 15% annually.
(ii)
CO2 Capture and Sequestration (CCS)
CO2 Capture and Sequestration (CCS) is a
technology that allows the storage of CO2 highly
undesired emissions in secure, deep underground
reservoirs. This is a large-scale application, with
tremendous potential.
From the market point of view, the potential
is impressive when one considers the
increasingly tough legislative demands and the
significant decrease in the oil and natural gas
reserves. It is important to mention that CCS is
part of the European Energy 2020 strategy [2].
Currently, coal-based power plants are the
largest contributor to CO2 emissions. Since
renewable energy sources are still struggling to
meet global energy demand, coal is expected to
remain a major player in the future. Thus,
reducing its emission levels is of crucial
importance. CCS has the potential to reduce
coal-bases power plants CO2 emissions by 80
90%.
The currently available CCS sites worldwide
have the potential of sequestrating 20 million
tones of CO2 per year. By 2015, 6 new projects
will be active, thus increasing the sequestered
CO2 amount to about 33 million tones annually
[3].
A typical CCS chain contains capture and
separation of CO2 (in fossil fuel-based power
plants, iron and steel, cement or paper factories,
etc.),
compression
and
dehydration,
transportation (pipelines, ships), sequestration (in
saline, depleted oil and gas reservoirs, coal mines,
etc.). In all these stages, gas sensors (especially
for CO2 and H2S concentrations monitoring),
water vapour and temperature sensors are
essential components (especially in tanks,
pipelines and ships transportation, but also in
storage reservoirs). The conditions in which such
sensors are expected to operate for this type of
application are harsh (high temperature up to
170C, high pressure up 10-80 MPa, i.e. highly
corrosive). An SOI SIP able to reliably measure

Fig. 1. Schematic view of a HE domestic boiler and the

possible positioning of CO2 and flow sensors.

Furthermore, low power consumption is also

a requirement, which again is linked to overall
system efficiency. Sensing the gas flow, water
vapour and temperature values, together with
detecting the CO2 level, is of course a significant
benefit provided that a single platform
technology can deal with it, otherwise it can
result in increased cost and as a result less
market appeal. So far, no multi-measurand
solution, able to cope to the harsh environment
conditions mentioned above, is currently on the
market. Boilers that employ the HE system now
are currently using only a CO2 sensor to achieve
their auto-adaptability feature. Among other
drawbacks, current sensors suffer from poor
reliability and reduced lifetime (3 years on
average).
SOI could be an ideal solution for multimeasurand sensors resulting in a dramatic
increase in the combustion efficiency of the HE
system with the corresponding benefit of
significant decrease in natural gas consumption
and in boiler emission. These sensors could be
assembled in dedicated high temperatures SIPs
(System in Packages) with a lifetime of 5-

the 4 measurands mentioned above (i.e.

temperature, water vapour, CO2 and H2S) would
make a significant impact, both in terms of CO2
transportation performance and for increasing
safety and security in the other stages of the CCS
chain.

(iii)
Oil & Gas Storage and Transportation
Similar to the above mentioned application,
the Oil & Gas Storage and Transportation
business requires increased performance and
safety. A multi-measurand SOI-based sensing
solution will help monitoring the oil & gas
conditions within tanks and pipes. When filling a
tank with gas or oil, it is essential to monitor the
flow of gas or oil, respectively. At the same time,
measuring the temperature, pressure and flow
within the tank and transportation pipe will
increase the safety of the operation [4]. For
similar safety reasons, it is compulsory to
measure precisely the temperature and H2S level
within the tank during ship transportation. When
storing oil and gas in tanks, monitoring
temperature and water vapour level provides
essential information with respect to the storage
efficiency. Harsh environment conditions, such
as relative humidity up to 100% and high
corrosion rates, are again expected.

leakage again due to its highly improved

isolation
enhanced CMOS performance (better sub
threshold/less influence of the parasitic
bipolar transistors/less charge wasted in the
depletion/stronger inversion)
higher operating temperature (due to
reduced leakage and less parasitic bipolar
action)
the buried oxide can be used as a very
effective etch stop to form membranes for
pressure sensors, gas sensors, IR emitters,
IR detectors etc.
the buried oxide can be etched under the
SOI layer to leave a free standing
monocrystaline silicon structure for
resonators/pressure sensors, accelero-meters
etc.
the buried oxide can withstand high electric
fields in lateral high voltage structures
excellent for integrating more than one
power or high voltage device and allowing
fast recovery diodes, and
excellent for lateral bipolar transistors as
plasma is constricted to the SOI region
resulting in very high commutation speed.

These remarkable features make SOI a very

attractive platform for application in four main
areas:
sensors
high voltage integrated circuits
electronics for harsh environment (high
temperature/ high radiation)
high speed electronics
Interestingly, here we are addressing two of
these areas in sensing technologies for harsh
environments. An important question is: are
there other semiconductor technologies that can
cover such areas?. The answer is both yes and
no. Bulk silicon struggles to operate above 150200oC, but its reduced cost makes it highly
attractive and therefore there has been and will
always be a strong industrial/commercial interest
to extend its limits of operation. For example
several bulk silicon devices and IC technologies
are approaching the 200oC limit, while isolation
techniques using DTI (deep trench isolation) and
highly doped buried layers have been developed.
SiC and Diamond on the other hand have some
very attractive properties, such as a very wide
bandgap, low intrinsic carrier concentration,
great mechanical resistance but their success is

(iv)

Automotive (combustion optimization

and emission monitoring)
Gas sensors can be mounted either in the
engine or in the exhaust system, where detecting
the levels of CO2 and CO is essential both for the
optimum combustion of the engine and for
reducing as much as possible the level of the
emission gases. The conditions in which such
devices are expected to operate are harsh due to
the high temperature levels (up to 550oC in the
engine, up to 225C in the exhaust system).

2. THE ARGUMENT FOR SOI

TECHNOLOGY
SOI is one of the most advanced CMOS
technologies today. Its main advantages
compared to bulk silicon technologies are [5-7]:
low leakage currents (often by one to two
order of magnitude)
enhanced hardness against radiation and
cosmic rays
latch-up free due to effective isolation
less parasitic components and low substrate

or will be limited to niche and high end

applications, as they suffer from high wafer and
processing costs, low yield and poor availability
of materials from suppliers.

3. BUILDING BLOCKS IN SOI

TECHNOLOGY
In this section we present the main
structures/devices used in SOI sensors at high
temperatures: MOSFETs, thermo-diodes, microhotplates, smart micro-hotplates and microwires.
The typical I-V characteristic of an n-channel
SOI MOSFET operating from room temperature
to 300oC is shown in Fig. 2. Tungsten
metallization is used instead of the usual
aluminium in order to allow higher operating
temperatures. The leakage current and the
parasitic bipolar transistor action are minimized
through extensive use of body shorts in the third
dimension. The MOSFET is an important
component of any electronics and therefore its
demonstration and stability at high temperatures
in excess of 200oC is compulsory in harsh
environments. An SOI MOSFET can also be
used as a micro-heater driver (in series with the
micro-heater) or as a micro-heater itself. In the
latter case the MOSFET is embedded within a
SOI membrane [8, 9]. Fig. 3 shows a photo of a
micro-heater using a p-channel MOSFET and its
self-heating characteristics. The MOSFET can
reach 550oC before the parasitic p-n-p transistor
kicks in.
Instead of a MOSFET, one can use a resistive
heater [10-12]. The heater can be made of
tungsten as either a micro-wire (for thermal flow
sensors) or a micro-hotplate (for resistive gas
sensors, pellistors or IR emitters) [13]. Fig. 4
shows a photograph of a micro-wire suspended
on a SOI membrane for use as a flow or sheer
stress sensor. The wire will dissipate more heat
due to convection to the flow and therefore it is
cooled down when operated at constant power
[14, 15]. The typical power consumption is
0.1mW/oC. Given that the wire is much thinner
(~ 2 m0.3 m cross section) than in state-ofthe-art devices fabricated via screen printing, the
response is extremely fast (60 kHz frequency)
with a sensitivity >50 mV/Pa. Typically,
microwires operate at a maximum temperature of
300oC.

Fig. 2. I-V characteristics of an n-channel SOI MOSFET at

different temperatures (up to 300 oC) and Vgs=5 V.
P-MOSFET
Heater

MOSFET
Tracks

Temperature
Sensing Diode

Membrane

100m

-0.5

-1

-1.5

-2

-2.5

-3

-3.5

-4

-4.5

-5

#58_PMOS
0.0000

Iheater (A)

Vg=-5V

-0.0150

Vg=-3V

-0.0200

Vg=-2V
Vg=-1V
Vg= 0V

550

-0.0100

Vg=-4V

-0.0250
-0.0300

Current (A)

-0.0050

-0.0350

Vheater (V)

Fig. 3. Photograph (top) of an SOI micro-heater using a pchannel FET and the self-heating characteristics showing
normal operation up to about 550 oC followed by the turnon of the parasitic p-n-p bipolar transistor (below).

Fig. 4. Photograph of a micro-wire made of tungsten in SOI

technology for use as a flow or sheer stress sensor.

Tungsten
Heater

Gas sensing
material

Sensing
Electrodes

Tungsten Heat
Spreading Plate

On-membrane
diode

Passivation

NMOS

PMOS

Membrane
N+

N-

P+

N+

N-

Reference
Diode offmembrane

Buried Silicon Dioxide

P+
P+ N-

P+ N+ P-

N+

Substrate
Sensor area

CMOS

Fig. 5. Schematic drawing of an SOI CMOS microhotplate with integrated thermodiodes for peak and ambient
temperatures and CMOS cells outside the membrane. In this schematic drawing the micro-hotplate
features top electrodes and a sensitive layer.

An important aspect in harsh environments is

the stability of the micro-hotplate and the other
building blocks at extreme temperatures. In Fig.
7(a) the stability of the micro-heater in pulse
conditions at 10 Hz with 50% duty cycle is
shown. In Fig. 7(b) the Mean Time To Failure
(MTTF) function of temperature is extracted
using an Arrhenius relationship. In order to
obtain a very high MTTF the design of the heater
has been carefully optimized to minimize
mechanical stress and concomitantly reduce
electro-migration. The composition of the
passivation layer and the residual stress in the
ILDs and the buried oxide play an important role
in balancing the overall stress in the membrane.

Micro-hotplates use a larger heater for

applications in gas sensors. Fig. 5 shows the
cross-section of a micro-hotplate in SOI
technology with the circuitry on the same chip.
Depending on the area of the heater and the
membrane, the DC power consumption can vary
between 0.05 mW/oC and 0.2 mW/oC.
This of course can be lowered significantly if
the micro-hotplate is operated in pulse
conditions, taking into account that typical
thermal time constants are around 10-20 ms.
Furthermore, the ambient temperature (outside
the membrane) can reach 225oC, without
impacting the operation of the micro-hotplate.
The CMOS process is qualified at this
temperature against electro-migration or TDDB
(time dependent dielectric breakdown). Thus,
this SOI micro-hotplate is an essential platform
for harsh-environments. A top-view photo of
asmart micro-hotplate using feedback electronics
to maintain the temperature constant is shown in Fig. 6.

a)

Circuitry

b)
Heater

100m

Fig. 6. Photograph of a smart SOI micro-hotplate

with integrated electronics, MOSFET drive
and temperature sensor.

Fig. 7. Stability of the micro-heater in (a) DC and (b) pulse

conditions (over 3 million pulses).

top of the optical path and depending on its

concentration it absorbs a certain amount of
radiation at a specific wavelength. This is
detected by the IR sensor, amplified and
eventually read out in a suitable format through a
transducing circuit. The filter is used to enhance
selectivity to a specific gas absorption band (e.g.
4.3 and 15 m for CO2). Generally all the NDIR
systems operate below 100oC. The use of a
micro-bulb as an IR emitter at higher ambient
temperatures (i.e. in harsh conditions) is
prohibited due to its poor lifetime. Its glass cap
also limits the absorption wavelengths of the
gases that can be detected to below 5 m.
Furthermore, the bulbs are very slow and cannot
be operated above 5 Hz, making the system
sensitive to high 1/f noise. LEDs cannot be used
either in harsh environments as the temperature
variation would lead to high variations in the
optical power and alter the wavelength at which
the radiation peak occurs.

The thermo-diode is also an important

building block for any sensor as we rely on it for
accurate temperature detection or temperature
compensation in some cases. The thermo-diodes
are not known to operate commercially above
200oC and there are very few research studies
[16, 17] reporting their behaviour beyond this
temperature. Here we show that a carefully
designed thermo-diode, with extremely low
leakage current (specific to SOI) can be operated
up to 600oC reliably giving a linear response of
(approx 1.3 mV/oC), as shown in see Fig. 8.
Moreover the diode is stable, and for over 500
hours at 500oC, the change in the output voltage
was below 1%. Furthermore the diode was found
to have a minimal piezo-junction response and
therefore the effect of the stress induced by the
high temperatures in the membrane on the output
voltage of the diode can be neglected.

Fig. 9. A schematic drawing of a NDIR gas sensor.

Fig. 8. The output voltage across an SOI diode in the
forward bias mode operation vs temperature. The forward
currents injected were 20 A, 65A and 100 A. The diode
shows a linear response with a slope of (1.3mV/oC) up to
600oC.

-10

Black Body radiation

x 10

T=300 K
T=500 K
T=700 K
T=800 K
T=900 K
T=1000 K

1.8
1.6

Power [W/m2 srad]

1.4

4. NDIR BASED SOI GAS SENSOR

SUITABLE FOR HARSH
ENVIRONMENTS

1.2
1
0.8
0.6

IR sensors operate using thermal radiation

from hot devices to detect the presence of heat or
to use radiometric conversions to obtain the
actual temperature of the device. The principle of
operation is to detect IR wavelengths in the range
of 1 to 15 m using sensitive materials, such a
pyro-electric crystals, resistive devices such as
bolometers, thin-film or silicon based planar
thermopiles. The principle of a Non-dispersive
IR gas sensor (NDIR) is based on an IR emitter
at one end of an optical path while at the other an
IR detector with an optical filter is inserted (Fig.
9). The gas is allowed in through some holes on

0.4
0.2
0

8
10
12
Wavelength [um]

14

16

18

20

Fig. 10. Emission power vs wavelength for different microhotplate temperatures (the markers indicate the CO2
absorption lengths). For increased sensitivity temperatures >
500oC are needed.

The micro-hotplate, with its wide spectrum

and very high lifetime is ideal for use as an IR
emitter. In addition, the micro-hotplate can be
driven in pulse mode by an internal MOSFET
and/or can have intelligence incorporated on-

chip. Furthermore, the SOI micro-hotplate with

tungsten metallization can operate at ambient
temperatures of 225oC making it ideally suitable
for harsh environments. The electronics and
detectors must also be designed to operate at
such temperatures (this is one of the aims of the
SOI-HITS EU FP7 project [18]). The microhotplate gives a spectrum close to that of a black
body. This is adjusted by a unitless factor called
emissivity. The closer the emissivity to one, the
closer the emission is to the ideal black-body
radiator. The emissivity however varies with
temperature and often time. Fig. 10 shows the
typical emission spectrum for a micro-hotplate
operated at different temperatures. For CO2,
strong radiation absorption peaks occur at 4.3
and 15 m wavelengths. For CO the absorption
peak is at 4.6 m. To increase the emissivity one
can grow or deposit nanomaterials, such as
carbon nanotubes CNTs [19], or silver and gold
particles.

Fig. 11 shows a picture of single walled CNTs

grown locally on top of the micro-hotplate using
a PECVD technique and the high temperature
(~700C) generated by the micro-heater itself.
These particles or nanomaterials can enhance
significantly the emissivity (or indeed the
absorption on the detector), but the most
important issues are reproducibility and stability
for prolonged periods at high temperatures. Fig.
12 shows the enhancement of the emission when
using different type of nanomaterials on top of
the CMOS SOI micro-hotplate. The signal
shown is the detector voltage (a thermopile) for
different temperatures of the IR emitter
microheater.

5. CONCLUSIONS
In this paper we have described different
harsh environment applications (HE boilers and
carbon capture systems) that demand new
advanced sensing technologies. We have shown
here that SOI CMOS technology provides an
ideal platform for such applications, owing to its
higher operating temperature, ease of MEMS
manufacturability, possibility of integrating high
temperature electronics and, last but not least,
high reproducibility, yield and reliability. We
have shown different components that have been
fabricated in SOICMOS technology such as
resistive and FET micro-heaters, thermo-diodes,
and flow sensors. Finally, we have described a
prototype NDIR gas sensor with a suitable IR
emitter for CO2 and possibly CO detection for
application in harsh environments.

Fig. 11. SEM showing the CNTs grown self-aligned on top

of one of the SOI micro-hotplates.

AcknowledgmentsThis work has been partially

funded by the EU FP7 SOI-HITS (Smart Siliconon-Insulator Sensing Systems Operating at High
Temperature) see www.soi-hits.eu. We would
also like to thank our partners in the SOI-HITS
project Microsemi, IREC, CISSOID and UCL,
and Dr. A. Fasoli, Dr. M.T. Cole and Dr. V.
Pathirana from the University of Cambridge for
advice related to this work.
References
[1]

Fig. 12. Emission enhancement using different nanomaterials. The signal shown is the output voltage on a
thermopile for different temperatures of the IR emitter
microheater.

[2]
[3]

M. Schultz, Gas Appliance Modulating Controls

Technology, American Society of Gas Engineers
Conference, Las Vegas, USA, June 2011.
http://ec.europa.eu/energy/energy2020/
http://www.globalccsinstitute.com/

[4]

[5]
[6]
[7]
[8]

[9]

[10]

[11]

[12]

[13]

[14]

[15]

[16]

[17]

[18]

L. Xie, S. Wang, Z. Zheng, Q. Song, Design and

Realization of Safety Monitoring and Controlling
System for Pipelines in Oil Depot, Proceedings of
the International Conference on Pipelines and
Trenchless Technology ICPTT, pp. 529537,
Shanghai, China, 2009.
S. Cristoloveanu, Introduction to Silicon on
Insulator Materials and Devices, Microelectronic
Engineering, 39, pp. 145154, 1997.
F. Udrea, et al., SOI Power Devices, Electronics
and Communication Engineering Journal, 12(1),
pp. 2740, 2000.
G.G. Shahidi, SOI Technology for the GHz era,
IBM Journal of Research and Development,
46(2/3), pp. 121131, 2002.
F. Udrea, J.W. Gardner, D. Setiadi, J.A. Covington,
T. Dogaru, C.C. Lu, W. I. Milne, Design and
simulations of SOI CMOS micro-hotplate gas
sensor, Sensors and Actuators B, 78, pp. 180190,
2001.
P.K. Guha, S.Z. Ali, C.C.C. Lee, F. Udrea, W.I.
Milne, T. Iwaki, J.A. Covington, J.W. Gardner,
Novel design and characterization of SOI CMOS
micro-hotplates for high temperature gas sensors,
Sensor and Actuator B, 127, pp. 260266, 2007.
M. Graf, D. Barrettino, K.U. Kirstein, A.
Hierlemann, CMOS microhotplate sensor system
for operating temperatures up to 500C, Sensor
and Actuator B, 117, pp. 346352, 2006.
A. Hierlemann, D. Lange, C. Hagleitner, N.
Kerness, A. Koll, O. Brand, H. Baltes,
Application-specific sensor systems based on
CMOS chemical microsensor, Sensors and
Actuators B, 70, pp. 211, 2000.
M. Graf, D. Barrettino, H.P. Baltes, A. Hierlemann,
CMOS
hotplate
Chemical
microsensors,
Springer-Verlag Berlin Heidelberg, pp. 2958,
2007.
S.Z. Ali, P.K. Guha, C.C.C. Lee, F. Udrea, W.I.
Milne, T. Iwaki, J.A. Covington, J.W. Gardner,
High temperature SOI CMOS tungsten microheater, Proceedings of the 5th IEEE conference on
sensors, pp. 847850, Daegu, Korea, , 2006.
I. Haneef, S.Z. Ali, F. Udrea, J.D. Coull, H.P.
Hodson, High performance SOI-CMOS wall shear
stress sensors, Proceedings of the 6th IEEE
conference on sensors, pp. 10601064, Atlanta,
GA, 2007.
[15] Z. Wang, K. Tian, Y. Zhou, L. Pan, C. Hu, L.
Liu, A high-temperature silicon-on-insulator stress
sensor, Journal of Micromechanics and
microengineering, vol. 18, pp. 045018-045028,
2008.
S. Santra, P.K. Guha, S.Z. Ali, I. Haneef, F. Udrea,
Silicon on Insulator Diode Temperature Sensor
A Detailed Analysis for Uktra-High Temperature
Operation, IEEE Sensor Journal, 10(5), 2010.
Y.M. Shwarts, V.L. Borblik, N.R. Kulish, E.F.
Venger, V.N. Sokolov, Limiting Characteristics of
Diode Temperature Sensors, Sensors and
Actuators, 86, pp. 197205, 2000.
www.soi-hits.eu

[19]

10

Z.P. Yang, L. Ci, J.A. Bur, S.Y. Lin, P. Ajayan,

Experimental Observation of an Extremely Dark
Material Made by a Low-density Nanotube array,
Nano Letters, 8(2), pp. 446451, 2008.