AP4435GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
D
D
Low On-resistance
D
D
Fast Switching
BVDSS
-30V
RDS(ON)
20m
ID
-8A
SO-8
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25
ID@TA=70
Rating
Units
- 30
20
Continuous Drain Current
-8
Continuous Drain Current
-6
-50
1,2
IDM
Pulsed Drain Current
PD@TA=25
Total Power Dissipation
2.5
Linear Derating Factor
0.02
W/
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
Max.
Value
Unit
50
/W
201124043
AP4435GM
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
-30
BVDSS
Drain-Source Breakdown Voltage
BVDSS/Tj
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
-0.04
V/
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-8A
15
20
VGS=-4.5V, ID=-5A
26
32
VDS=VGS, ID=-250uA
-1
-3
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=-15V, ID=-8A
20
VDS=-30V, VGS=0V
-1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-25
uA
Gate-Source Leakage
VGS=20V
100
nA
ID=-4.6A
36
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
5.5
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
3.5
nC
td(on)
Turn-on Delay Time
VDS=-15V
12
ns
tr
Rise Time
ID=-1A
ns
td(off)
Turn-off Delay Time
RG=6,VGS=-10V
75
ns
tf
Fall Time
RD=15
40
ns
Ciss
Input Capacitance
VGS=0V
1530
pF
Coss
Output Capacitance
VDS=-15V
900
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
280
pF
Rg
Gate Resistance
f=1.0MHz
Min.
Typ.
IS=-2.1A, VGS=0V
-1.2
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
55
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
83
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.
AP4435GM
50
50
40
T A =150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
-10V
-8.0V
-6.0V
T A =25 C
30
V G =-4.0V
20
10
30
V G =-4.0V
20
10
0
0
10
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
50
I D =-8A
I D =-8A
V G =-10V
1.4
o
T A =25 C
Normalized R DS(ON)
40
RDS(ON) (m )
-10V
-8.0V
-6.0V
40
30
1.2
1.0
20
0.8
0.6
10
-50
10
-V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
100.00
10.00
T j =25 o C
-VGS(th) (V)
-IS(A)
T j =150 o C
1.00
0.10
0.01
0.1
0.3
0.5
0.7
0.9
1.1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4435GM
f=1.0MHz
-VGS , Gate to Source Voltage (V)
14
10000
I D =-4.6A
V DS =-15V
12
10
C (pF)
C iss
1000
C oss
C rss
100
0
10
20
30
40
50
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Normalized Thermal Response (Rthja)
100.00
100us
10.00
1ms
-ID (A)
10ms
100ms
1.00
T A =25 C
Single Pulse
1s
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125
/W
0.10
0.001
0.1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V DS =-5V
-ID , Drain Current (A)
40
VG
T j =25 o C
T j =150 o C
QG
-10V
30
QGS
QGD
20
10
Charge
0
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
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