Nanotechnology Center
PLASMA RIE Birck
ETCHING
FUNDAMENTALS AND APPLICATIONS
O tli
Outline
1 Introductory Concepts
1.
2. Plasma Fundamentals
3. The Physics and Chemistry of Plasmas
4 Anisotropy
4.
A i t
Mechanisms
M h i
g of Si and its Compounds
p
5. The Etching
6. The Etching of Other Materials
2
DEFINITIONS
Electron ((e-)
Positive ion (Ar+, Cl+, SiF4+, CF3+)
Positive ion mass in RIEs >>mass of electron
Radical (F, Cl, O, CF3)
Uncharged atoms with unsatisfied chemical
bonding
DEFINITIONS (continued)
( ti d)
Mean free ppath
5
((cm
cm)
P (mT )
average
g distance a pparticle travels before collisions
((Dependent
p
on the species)
p
)
Pressure
1atmosphere= 760 Torr = 1*105 Pascals
Pumping speed (S) [liters/sec]
Gas flow rate (Q) [Torr-liters/sec] or [sccm]
Pl
Plasma
Vacuum
V
S
System
t
Gas lines
valve
Mixed gas [Q]
MFC box
Chamber
VRF
Matching
network
dP(t)
( ) (Q - S P(t))
( ))
=
dt
V
In Steady state : Q = S P
APC & gate
valve
Vacuum pump [S]
He backside
cooling
V= chamber volume
M h i l Pumps
Mechanical
P
Wet and Dry Pumps
Pumping speed: 20-500 m3/h
Ultimate pressure: 1-10 mTorr
[BOC Edwards Dry Pump]
[Kurt J. Lesker]
T b Pumps
Turbo
P
Rotation speed= 20000-90000
20000 90000 rpm
Pumping speed: 50-3000 l/s
Ultimate pressure: 10-5-10-8 Torr
[Wiki]
[BOC Edwards Turbo Pump]
[TP controller]
M Flow
Mass
Fl Controller
C t ll (MFC)
Thermal-based flow meter
Heater
Q [sccm]
T1
T2
T2 T1= Cp Q
Cp is specific heat.
[HORIBASTEC]
MFC or G
Gas B
Box
Mixed gas
line
Gas
G
lines
Panasonic MFC Box
9
A t
Automatic
ti Pressure
P
Controller
C t ll (APC)
& Gate Valve
Pendulum valve
Butterfly valve
Q = SP
10
[VAT]
Cl
Clamp
or Electrostatic
El t t ti Chuck
Ch k
Clamp
Electrostatic Chuck (ESC)
Si wafer
Dielectric
------+++++
+++++
------Base Plate
+V
He
11
-V
RF G
Generator
t & Matching
M t hi Network
N t
k
RF Generator
Matching
Network
PF
PL
Chamber ZL
ZIn
PR
ZS= 50
PL=PF- PR
In general: ZL ZS
Purpose of Matching Network: Zin= ZS to
maximize power delivery from source.
ZS
Manual or Automatic
Matching Network
C1
C2
ZIn
12
ZL
[Gambetti]
O tli
Outline
1 Introductory Concepts
1.
2. Plasma Fundamentals
3. The Physics and Chemistry of Plasmas
4 Anisotropy
4.
Anisotrop Mechanisms
5. The Etching of Si and its Compounds
6. The Etching of Other Materials
13
[Plasmas.org]
Wh t is
What
i Plasma?
Pl
?
Plasma is the fourth state of matter. It is an ionized ggas, a ggas
into which sufficient energy is provided to free electrons from
atoms or molecules and to allow both species, ions and
electrons to coexist.
electrons,
coexist
[Plasmas org]
[Plasmas.org]
14
H tto Make
How
M k Pl
Plasma??
Plasma
Capacitive
p
RIE
- Low density plasma
ne 109 [electron/cm3]
Ionization efficiency 10-7
Inductive RIE
Magnetic field
- High density plasma
Wafer
ne 1013 [electron/cm3]
Ionization efficiency 10-3
15
[Oxford Instruments]
DC Glow Discharge
Only used for sputtering system not for etching.
etching
Vc= -100
Vc=0
n
Red: ni
Black: ne
V( )
V(x)
V(x)
Vp
Vp
-100v
Vp= a few volts
16
RF Glow Discharge
Used for any materials (insulating and conductive) .
VRF(t)
VRF
Vp (t) =
Vp(t)
AE AG ZG ZE
Vp (t) VRF (t)
VRF(t)
ZE
V(x)
VRF
17
ZG
VRF (t)
ZG + ZE
ZG
RF Glow Discharge
ZG
Vp (t) =
VRF (t)
ZG + ZE
Actual RIE
VRF(t)
ZE
E AG Z
G >>Z
AA
<<A
Z
E
G
E
G
VpV(t)
VRF0(t)
p(t)
Ion transit time (Tion) is the time it takes the ion
to traverse the sheath.
q << Tion !
1/Freq
18
Freq=
q 13.56 MHz
P h L
Paschens
Law
Describes how the breakdown voltage depends on electrode
separation and the pressure based on ideal gas law.
a (p
(p.d))
V=
l n(p.d) + b
V: Voltage
p: Pressure
d: gap distance
a & b: constants
V
800
600
400
10-1
19
100
101
Pd [Torr cm]
I d ti Coupled
Inductive
C
l d Plasma
Pl
RIE
STS ASE and AOE systems
20
Wh High Densit
Why
Density Plasmas?
Lower ion bombardment energies improve selectivity and reduce ionbombardment-induced physical damage of the wafer surface.
g , however,, result in the lower etch rates and reduced
Lower ion energies,
anisotropy!
However
However, the etch rate can be increased by using much higher ion fluxes
due to high density plasmas.
The anisotropy can also be restored by operating at low pressure.
pressure
21
O tli
Outline
1 Introductory Concepts
1.
2. Plasma Fundamentals
3. The Physics and Chemistry of Plasmas
4 Anisotropy
4.
Anisotrop Mechanisms
5. The Etching of Si and its Compounds
6. The Etching of Other Materials
22
Electron Molec le Collisions
Electron-Molecule
An energetic electron colliding with a neutral etch gas molecule can
create any of the following processes:
9 Dissociation AB + e-
A+B + e-
CF4 + e-
CF3+F+e-
9 Ionization
AB+ + 2e-
Ar + e-
Ar+ +2e-
AB + e-
Often dissociation and ionization
Occur in one collision:
CF4 + e-
23
CF3++ F+ 2e-
R di l andd Ions
Radicals
I
in
i Plasmas
Pl
24
Positive ions are veryy important
p
for etching
g pprocesses.
Radicals are more numerous than ions in gas glow
discharges because:
1.
The electron energy required in order to break chemical bonds in the
molecules is usually less than the energy required to ionize these
molecules.
2.
Radicals have a longer lifetime in the plasma compared to ions because
an ion is almost always neutralized during a collision with a surface
while radicals often do not react with a surface and are reflected back
into the plasma.
Wh t iis Pl
What
Plasma Etching?
Et hi ?
CF4
CF4 + eSi + 4F
CF3++ F+ 2eSiF4 (gas)
valve
Chamber
Gate valve
+,
CF3 F
Si Wafers
Vacuum pump
SiF4
1- Need an etching gas
2- Establish a glow discharge
3- Choose chemistry so that the reactive species react with the substrate
to form a volatile by-product
4- Pump away the volatile by-product
25
Wh Pl
Why
Plasma Et
Etching?
hi ?
Clean process
Compatible with automation
Anisotropic etching
P i pattern
Precise
tt
transfer
t
f especially
i ll for
f Nano-scale
N
l features
f t
Mask
Substrate
Isotropic etch
26
Directional etch
Vertical etch
Gas Solid Systems
Gas-Solid
Solid
Silicon
Etch Gas
Etch Product
CF4,Cl2, SF6
SiF4, SiCl4, SiCl2
CF4, C4F8,
CHF3, SF6
SiF4, CO, O2, N2,
FCN
Al
BCl3/Cl2
Al2Cl6, AlCl3
Ti, TiN
Cl2, CF4
TiCl4, TiF4
Organic Solids
O2, O2/CF4
CO, CO2,
GaAs & III-V
Cl2/Ar, BCl3
Ga2Cl6, AsCl3
Cl2/O2
CrO2Cl2
SiO2, SiNx
Cr
Difficult materials to etch:
Fe, Ni, Co, Au, Ag, Pt
halides not volatile
Cu
Cu3Cl3 is volatile above 200C
27
Halogen Si
Sizee Effect
[Handbook of Advanced Plasma Processing Techniques by Pearton]
28
O tli
Outline
1 Introductory Concepts
1.
2. Plasma Fundamentals
3. The Physics and Chemistry of Plasmas
4 Anisotropy Mechanisms
4.
5. The Etching of Si and its Compounds
6. The Etching of Other Materials
29
D fi iti
Definition
Etch rate
Mask
G ld
Gold
Mask (Photoresist, Metal, SiO2, )
Substrate
Selectivity
Anisotropy degree
L
Af 1
H
30
L
H
Reactive etching
R
Reactive
ti etching
t hi is
i an isotropic
i t
i process!
Has very high selectivity!
Si + 4F
Mask
SiF4
F
Substrate
Isotropic etch
31
SiF4 (gas)
Ion etching
Ion etching or mechanical etching is an anisotropic
process!
Has lower selectivity
y and etch rate!
Si + Ar+
S
Si + Ar+
S
Si
Ar+
Mask
Substrate
Directional etch
32
Vertical etch
Reactive ion etching
Reactive ion etching is an anisotropic process!
Has better selectivity and much higher etch rate!
[J. Appl. Phys. 50, 3189 (1979)]
33
Effect of Ions:
Breaks bonds, raises temperature locally
on the surface and provides activation energy
Side all Passivation
Sidewall
Passi ation
Deposition of carbon polymer material on the sidewalls
where:
(a) Either the carbon is provided by the feed gas through the chamber
such as CHF3, C4F8.
(b) Or the carbon is provided by the erosion of the photoresist etch
mask.
34
Side all Passivation
Sidewall
Passi ation
Oxidation of the sidewall by adding O2 gas.
35
B hP
Bosch
Process
Switching SF6 and C4F8
500um Silicon Etched by T.
Maleki using STS ASE
(8um/min etch rate)
Th sidewall
The
id
ll fil
film thickness
hi k
d
depends
d to the
h d
deposition
i i or passivation
i i time.
i
36
T
Temperature
t
effects
ff t in
i plasma
l
etching
t hi
Wafer surface temp. depends on:
- Chuck temperature
- Ions
I energy and
dd
density
it
Reaction probabilityy of radicals depends on substrate
temperature.
Helium backside cooling helps anisotropic etch by preventing
or reducing reaction of F and Cl species with sidewalls.
37
Notch Effect
Notching effect due to charging
oxide by ions
Can be reduced by using low
frequency (LF) 380kHz bias generator
in pulsed mode
e-
+
+++++++
RF bias
on
RF bias
off
[J. Vac. Sci. Technol. B 19.5., Sep/Oct 2001]
STS ASE has LF pulsed generator!!
38
Other Effects
Grass or micromasking
g issue mainly
y
because of metal mask sputtered on
the wafer
Aspectt Ratio
A
R ti Dependent
D
d t Eff
Effectt (ARDE)
Typically large open areas etch faster than
smaller features!
39
Other Effects
Microloading effect:
Feature of the same size etch more slowly in dense patterns
Than in wide open areas!
Etching
Et hi
Species
Density
x
40
O tline
Outline
1 Introductory Concepts
1.
2. Plasma Fundamentals
3. The Physics and Chemistry of Plasmas
py Mechanisms
4. Anisotropy
5. The Etching of Si and its Compounds
6. The Etching of Other Materials
41
STS ASE DRIE
Its a 6 ICP Bosch p
process dedicated
for silicon etching!
Gases:
42
SF6
C4F8
O2
Ar
STS ASE DRIE
High
g etch-rate recipe:
p
Etchh
Passivation
Switching
time
Pressure
RF coil power
RF bias
power
Gas flow
[sccm]
8 5 sec
8.5
40 T
40mTorr
2200W
40W
450 SF6
3 sec
14mTorr
1500W
20W
200 C4F8
Etch rate 8m/min for 500 m feature
size with ~ 20% exposed area
High selectivity to PR 75-100
43
STS ASE DRIE
Low etch-rate recipe:
p
Switching
time
Pressure
RF coil power
RF bias
power
Gas flow
[sccm]
Etchh
13 sec
5 T
5mTorr
800W
25W
160 SF6
Passivation
7 sec
1mTorr
600W
20W
85 C4F8
Etch rate 2m/min for 500 m feature
size with ~ 20% exposed area
High selectivity to PR 50
Smooth side wall
44
STS AOE DRIE
Its a 4 ICP tool dedicated for etching
g
of oxide, nitrite, and polymers!
Gases:
Oxide Etch
SF6
C4F8
CF4
O2
Ar
He
Pressure
RF coil power
RF bias
power
Gas flow
[sccm]
2mTorr
600W
50W
13 CF4
Etch rate 0.3m/min
0 3m/min
Selectivity to PR 1-2
45
Panasonic RIE
Its a 6 ICP tool for etching of silicon,
oxide, nitrite, III-V, polymers, and some
metals!
G
Gases:
46
SF6
CHF3
Cl2
O2
CF4
Ar
BCl3
N2
Panasonic RIE
Si
Etch
P
Pressure
RF coil
il
power
RF bias
bi
power
SF6 flow
fl
[sccm]
O2 flow
fl
[sccm]
11Pa
900W
75W
30
30
Etch rate 1m/min
Si
Etch
Pressure
RF coil
power
RF bias
power
Cl2flow
[sccm]
O2 flow
[sccm]
0.8Pa
350W
50W
63
1.2
Etch rate 200nm/min
47
[Panasonic]
[Panasonic]
Panasonic RIE
Oxide
Etch
Pressure
RF coil
power
RF bias
power
CHF3 flow
[sccm]
0.16 Pa
450W
50W
40
SiO2
Etch rate 60 nm/min
SiN3
Etch
Pressure
RF coil
power
2 Pa
400W
Etch rate 100 nm/min
48
RF bias CF4 flow
power
[sccm]
30W
48
CHF3 flow
[sccm]
50
SiN3
[Panasonic]
Panasonic RIE
SiC Etch
Pressure
RF coil
power
RF bias
power
SF6 flow
[sccm]
4 Pa
700W
280W
50
Etch rate 0.46 m/min
[Panasonic]
SiC
Etch
Pressure
RF coil
power
RF bias
power
Cl2 flow
[sccm]
O2 flow
[sccm]
1.5 Pa
500W
150W
30
20
Etch rate 0.19 m/min
49
[Panasonic]
Plasma Tech RIE
9 Its a simple RIE.
9 It can be used for etching silicon, oxide,
nitrite, SiC, and polymers.
Gases:
SF6
50
O2
Ar
Outline
1 Introductory Concepts
1.
2. Plasma Fundamentals
3. The Physics and Chemistry of Plasmas
py Mechanisms
4. Anisotropy
5. The Etching of Si and its Compounds
6. The Etching of Other Materials
51
Panasonic RIE
Ti
Etch
Pressure
RF coil
power
RF bias
power
Cl2 flow
[sccm]
Ar flow
[sccm]
2 Pa
400W
100W
100
Etch rate 3 m/min
52
Panasonic RIE
GaAs
Etch
Pressure
RF coil
power
RF bias
power
BCl3 flow
[sccm]
Cl2 flow
[sccm]
Ar flow
[sccm]
3 Pa
900W
75W
50
150
20
Etch rate 5.3m/min
Selectivity to PR 5
53
[Panasonic]
Panasonic RIE
GaAs
Etch
Pressure
RF coil
power
RF bias
power
BCl3 flow
[sccm]
Ar flow
[sccm]
0.6 Pa
500W
50W
15
60
Etch rate 120 nm/min
Selectivity to PR 4
[Panasonic]
54
Panasonic RIE
GaN
Etch
Pressure
RF coil
power
RF bias
power
Cl2 flow
[sccm]
4 Pa
900W
90W
50
Etch rate 500 nm/min
Selectivity to PR 0
0.5
5
Selectivity to SiO2 5
[P
[Panasonic]
i ]
55
General Process Trends
How to Increase Etch Rate?
Increasing Main Coil Power
Increasing Platen or Bias Power
Increasing Process pressure
Increasing etching flow
Increasing Etch cycle time (for Bosch process)
How to Reduce Sidewall Roughness/Scallops?
Keep etch and deposition cycle times to minimum, (for Bosch process)
Reduce process pressure
Reduce etch gas flow
Increase deposition component
component, time,
time power,
power or flow (for Bosch process)
How to Increase Selectivity?
Increasing the pressure
Reducing platen power
56
General Process Trends
How to Straighten the Profile?
Using low pressure
Decreasing etch cycle time or increasing deposition cycle time (for Bosch process)
Optimizing platen power
57
General Process Trends
58
Trends for
Controlling
process results
Etch
rate
Etch gas increase
Profile
Selectivity
Sidewall
Roughness
Pressure increase
Etch Coil Power
increase
Platen Power
increase
Ackno ledgment
Acknowledgment
We would like to thank faculty members, staff, and
students for their support.
Questions?
59
