Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
Chapter 6
Exercise Solutions
EX6.1
V BB V BE (on ) 0.85 0.7
=
I BQ = 0.833 A
RB
180
= I BQ = (120 )(0.000833 ) = 0.10 mA
(a) I BQ =
I CQ
VCEQ = VCC I CQ RC = 3.3 (0.1)(15 ) = 1.8 V
I CQ
(b) g m =
VT
VT
r =
I CQ
0.1
= 3.846 mA/V
0.026
(120)(0.026 ) = 31.2
0.1
r
31.2
= (3.846)(15)
(c) A = g m RC
= 8.52
31.2 + 180
r + R B
______________________________________________________________________________________
EX6.2
V BB V BE (on ) 1.025 0.7
=
= 0.00325 mA
100
RB
= I BQ = (150 )(0.00325 ) = 0.4875 mA
(a) I BQ =
I CQ
gm =
r =
ro =
I CQ
VT
VT
I CQ
=
=
0.4875
= 18.75 mA/V
0.026
(150 )(0.026) = 8 k
0.4875
VA
150
=
= 308 k
I CQ 0.4875
r
8
= (18.75)(308 6)
(b) A = g m (ro RC )
= 8.17
+
8
+
100
r
R
B
______________________________________________________________________________________
EX6.3
(a)
I BQ =
VBB VEB ( on )
RB
I BQ = 0.0089 mA
1.145 0.7
50
or
Then I CQ = I BQ = ( 90 )( 0.0089 ) = 0.801 mA
Now
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
gm =
r =
ro =
I CQ
VT
VT
I CQ
0.801
= 30.8 mA / V
0.026
( 90 )( 0.026 )
0.801
= 2.92 k
VA
120
=
= 150 k
I CQ 0.801
We have Vo = g mV ro RC
(b)
V = Vs
r + RB
and
so
r
V
A = o = g m
Vs
r + R B
(ro RC )
2.92
= (30.8)
(150 2.5)
2.92 + 50
which yields A = 4.18
______________________________________________________________________________________
EX6.4
Using Figure 6.23
I = 0.2 mA, 7.8 < hie < 15 k , 60 < h fe < 125, 6.2 10 4 < hre < 50 10 4 ,
(a) For CQ
5 < hoe < 13 mhos
I = 5 mA, 0.7 < hie < 1.1 k , 140 < h fe < 210, 1.05 10 4 < hre < 1.6 10 4 ,
(b) For CQ
22 < hoe < 35 mhos
______________________________________________________________________________________
EX6.5
RTH = R1 R2 = 250 75 = 57.7 k
R2
VTH =
R1 + R 2
75
VCC =
(5)
75 + 250
or
VTH = 1.154 V
I BQ =
or
VTH VBE ( on )
RTH + (1 + ) RE
1.154 0.7
57.7 + (121)( 0.6 )
I BQ = 3.48 A
I CQ = I BQ = (120 )( 3.38 A ) = 0.418 mA
(a)
Now
gm =
r =
We have
I CQ
VT
0.418
= 16.08 mA / V
0.026
VT (120 )( 0.026 )
=
= 7.46 k
I CQ
0.418
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
Vo = g mV RC
We find
Rib = r + (1 + ) RE = 7.46 + (121)( 0.6 )
or
Rib = 80.1 k
Also
R1 R2 = 250 75 = 57.7 k
R1 R2 Rib = 57.7 80.1 = 33.54 k
We find
R1 R 2 Rib
V s =
R R R +R
S
1 2 ib
or
V = 33.54 V
s 33.54 + 0.5 s
Vs = ( 0.985) Vs
Now
1+
Vs = V 1 +
r
or
RE = V
121
1 + 7.46 ( 0.6 )
V = ( 0.0932 ) Vs = ( 0.0932 )( 0.985 )Vs
So
Av =
Vo
= (16.08 )( 0.0932 )( 0.985 )( 5.6 )
Vs
or
Av = 8.27
______________________________________________________________________________________
EX6.6
(a) RTH = R1 R2 = 14.4 110 = 12.73 k
R2
110
VCC =
VTH =
(12 ) = 10.61 V
110 + 14.4
R1 + R2
12 = (101)I BQ (0.3) + 0.7 + I BQ (12.73) + 10.61
so
I BQ = 0.0160 mA
I CQ = I BQ = 1.60 mA; I EQ = (1 + )I BQ = 1.62 mA
V ECQ = 12 (1.6 )(4 ) (1.62 )(0.3) = 5.11 V
(b) g m =
r =
ro =
I CQ
VT
VT
I CQ
1.60
= 61.54 mA/V
0.026
(100 )(0.026 ) = 1.625 k
1.60
VA
=
I CQ
(RC RL )
(100)(4 10)
= 8.95
r + (1 + )RE 1.625 + (101)(0.3)
______________________________________________________________________________________
(c) A =
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
EX6.7
(a) Ri = RS + RB r
I BQ RB + 0.7 + (1 + )I BQ R E + V = 0
5 0.7 = I BQ [100 + (121)(4 )] I BQ = 0.007363 mA
I CQ = I BQ = 0.8836 mA
I CQ
gm =
r =
VT
VT
I CQ
0.8836
= 33.98 mA/V
0.026
(120 )(0.026 ) = 3.53
0.8836
Ri = 0.5 + 100 3.53 = 3.91 k
(b)
ro =
VA
80
=
= 90.5 k
I CQ 0.8836
RB r
100 3.53
s =
= (0.872) s
V =
RB r + RS
100 3.53 + 0.5 s
V
A = g m (RC ro ) = (33.98)(4 90.5)(0.872 ) = 114
s
______________________________________________________________________________________
EX6.8
(a)
gm =
I CQ
VT
0.25
= 9.615 mA/V
0.026
V
100
= 400 k
ro = A =
I CQ 0.25
A = g m (ro rc ) = (9.615)(400 100) = 769
(b)
A = g m ro rc rL = (9.615 ) 400 100 100
A = 427
______________________________________________________________________________________
EX6.9
I BQ =
5 0.7
= 0.00672 mA
10 + (126 )( 5 )
I CQ = 0.84 mA, I EQ = 0.847 mA
VCEQ = 10 ( 0.84 )( 2.3) ( 0.847 )( 5 )
or
VCEQ = 3.83 V
dc load line
VCE (V + V ) I C ( RC + RE )
or
VCE = 10 I C ( 7.3)
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
ac load line (neglecting ro)
ce = i c (RC R L ) = i c (2.3 5) = i c (1.58)
______________________________________________________________________________________
EX6.10
(b) I BQ R B + 0.7 + (1 + )R E 5 = 0
I BQ = 0.007363 mA; I CQ = I BQ = 0.884 mA; I EQ = 0.8909 mA
VCEQ = 10 (0.8836 )(4 ) (0.8909 )(4 ) = 2.90 V
(c) VCE = I C (RC ro ) = I C (4 90.5) = I C (3.831)
For VCE = 2.9 0.5 = 2.4 V
2.4
= 0.626 mA; ce = 4.8 V, peak-to-peak
3.831
______________________________________________________________________________________
Then I C =
EX6.11
R2
1
VTH =
VCC = RTH VCC
+
R
R
R
2
1
1
RTH = ( 0.1)(1 + ) RE = ( 0.1)(121)(1)
(a)
so
RTH = 12.1 k , VTH =
1
(12.1)(12 )
R1
We can write
VCC = (1 + ) I BQ RE + VEB ( on ) + I BQ RTH + VTH
We have
I CQ = 1.6 mA, I BQ =
1.6
= 0.0133 mA
120
Then
1
(12.1)(12 )
R1
12.1 + (121)(1)
12 0.7
I BQ = 0.0133 =
which yields
R1 = 15.24 k
Since RTH = R1 R 2 = 12.1 k , we find R2 = 58.7 k
Also
VECQ = 12 (1.6 )( 4 ) (1.61)(1) = 3.99 V
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
(b)
ac load line ec = i c (RC R L )
Want
ic = I CQ 0.1 = 1.6 0.1 = 1.5 mA
Also vec = 3.99 0.5 = 3.49 V
ec 3.49
Now
=
= 2.327 k = RC R L
1.5
i c
So 4 R L = 2.327 k which yields RL = 5.56 k
______________________________________________________________________________________
EX6.12
(a) RTH = R1 R2 = 1.3 4.2 = 0.9927 k
R2
4.2
VCC =
VTH =
(12 ) = 9.1636 V
1.3 + 4.2
R1 + R2
9.1636 0.7
I BQ =
= 2.473 mA
0.9927 + (81)(0.03)
I EQ = (1 + )I BQ = 0.20 A, I CQ = I BQ = 0.1978 A
VCEQ = 12 (0.20 )(30 ) = 6.0 V
(b) g m =
I CQ
VT
0.1978
= 7.608 A/V
0.026
r = 10.52 , ro = 379.2
(1 + )(ro R E )
(81)(379.2 30)
=
= 0.9953
r + (1 + )(ro R E ) 10.52 + (81)(379.2 30)
Rib = r + (1 + )(ro RE ) = 10.52 + (81)(379.2 30)
A =
(c)
or
Rib = 2.26 k
______________________________________________________________________________________
EX6.13
R o = R E ro
r
10.52
= 30 379.2
= 0.129
1+
81
______________________________________________________________________________________
EX6.14
(a)
I CQ = 1.25 mA and = 100, we find
I = 1.26 mA and I BQ = 0.0125 mA
For EQ
VCEQ = 10 I EQ RE
Now
Or
4 = 10 (1.26 ) RE
which yields
RE = 4.76 k
Then
RTH = ( 0.1)(1 + ) RE = ( 0.1)(101)( 4.76 )
or
RTH = 48.1 k
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
We have
R2
1
VTH =
(10 ) 5 = RTH (10 ) 5
R1
R1 + R2
or
VTH =
1
( 481) 5
R1
I BQ =
We can write
Or
VTH 0.7 ( 5 )
RTH + (1 + ) RE
1
( 481) 5 0.7 + 5
R1
0.0125 =
48.1 + (101)( 4.76 )
which yields
R1 = 65.8 k
Since R1 R 2 = 48.1 k , we obtain
R2 = 178.8 k
(b)
r =
ro =
VT
I CQ
(100 )( 0.026 )
1.25
= 2.08 k
VA
125
=
= 100 k
I CQ 1.25
We may note that
g mV = g m ( I b r ) = I b
Also
Rib = r + (1 + ) R E R L ro
(
)
= 2.08 + (101)(4.76 1 100 )
or
Rib = 84.9 k
Now
RE ro
Io =
1 + ) Ib
R r + R (
L
E o
where
R1 R2
Ib =
I
R R + R s
ib
1 2
We can then write
RE ro
R1 R2
I
AI = o =
1+ )
(
R R +R
I s RE ro + RL
ib
1 2
We have
RE ro = 4.76 100 = 4.54 k
so
48.1
4.54
AI =
(101)
+
+ 84.9
4.54
1
48.1
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
or
AI = 29.9
(c)
R o = R E ro
r
2.08
= 4.76 100
1+
101
Ro = 20.5
or
_____________________________________________________________________________
EX6.15
(a)
RTH = R1 R2 = 70 6 = 5.53 k
R2
6
VTH =
(10 ) 5 =
(10 ) 5
+
R
R
70 + 6
1
2
or
VTH = 4.2105 V
We find
4.2105 0.7 ( 5 )
2.91 A
I BQ1 =
5.53 + (126 )( 0.2 )
and
I CQ1 = I BQ1 = (125 )( 2.91 A) = 0.364 mA
I EQ1 = (1 + ) I BQ1 = 0.368 mA
At the collector of Q1,
V 0.7 ( 5)
5 VC1
= I CQ1 + C1
RC1
(1 + )( RE 2 )
or
V 0.7 ( 5 )
5 VC1
= 0.364 + C1
5
(126 )(1.5)
which yields
VC1 = 2.99 V
also
VE1 = I EQ1 RE1 5 = ( 0.368 )( 0.2 ) 5
or
VE1 = 4.93 V
Then
VCEQ1 = VC1 VE1 = 2.99 ( 4.93) = 7.92 V
We find
I EQ 2 =
VC1 0.7 ( 5 )
1.5
= 4.86 mA
and
125
I CQ 2 =
I EQ1 =
( 4.86 ) = 4.82 mA
126
1+
We find
VE 2 = VC1 0.7 = 2.99 0.7 = 2.29 V
and
VCEQ 2 = 5 VE 2 = 5 2.29 = 2.71 V
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
(b)
The small-signal transistor parameters are:
r 1 =
VT
I CQ1
g m1 =
r 2 =
gm2 =
I CQ1
I CQ 2
0.364
I CQ 2
VT
= 8.93 k
0.364
= 14.0 mA / V
0.026
VT
VT
(125 )( 0.026 )
(125)( 0.026 )
4.82
= 0.674 k
4.82
= 185 mA / V
0.026
R = r + (1 + ) RE1 = 8.93 + (126 )( 0.2 )
We find ib1 1
Or
Rib1 = 34.1 k
and
Rib = r 2 + (1 + )(R E 2 R L )
= 0.674 + (126)(1.5 10) = 165 k
The small-signal equivalent circuit is:
We can write
Vo = (1 + )I b 2 (R E 2 R L )
where
RC1
Ib2 =
( g m1V 1 )
RC1 + Rib 2
V
V 1 = s r 1
Rib1
Then
R C1
V
A = o = (1 + )(R E 2 R L )
Vi
RC1 + Rib 2
so
5 125
A = (126 )(1.5 10 )
5 + 165 34.1
or
Av = 17.7
g m1 r 1
R
ib1
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
(c)
Ri = R1 R 2 Rib1 = 70 6 34.1 = 4.76 k
r + RC1
0.676 + 5
Ro = RE 2 2
= 1.5
126
1+
and
or
Ro = 43.7
______________________________________________________________________________________
Test Your Understanding Solutions
TYU6.1
ib =
s
R B + r
s
180 + 31.2
s
211.2
0.065 sin t
ib = 0.308 sin t ( A)
211.2
i B = I BQ + ib = 0.833 + 0.308 sin t ( A)
ib =
s =
be =
(0.065 sin t ) = 0.00960 sin t (V)
r
R
31
.
2
+
180
+
B
r
31.2
BE = V BE (on ) + be = 0.7 + 0.00969 sin t (V)
ce = A s = (8.52)(0.065 sin t ) = 0.554 sin t (V)
CE = VCEQ + ce = 1.8 0.554 sin t (V)
______________________________________________________________________________________
TYU6.2
(a)
V + V EB (on ) V BB 3.3 0.7 2.455
=
I BQ = 1.8125 A
RB
80
= I BQ = 0.20 mA
I BQ =
I CQ
V ECQ = 3.3 (0.2 )(7 ) = 1.9 V
(b)
(c)
(d)
gm =
I CQ
VT
0.2
= 7.692 mA/V
0.026
r =
VT (110 )(0.026 )
=
= 14.3 k
0.20
I CQ
ro =
VA
80
=
= 400 k
I CQ 0.20
r
14.3
= (7.692 )(7 400 )
A = g m (RC ro )
= 8.02
14.3 + 80
r + R B
Ri = R B + r = 80 + 14.3 = 94.3 k
Ro = RC ro = 7 400 = 6.88 k
______________________________________________________________________________________
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
TYU6.3
RTH = R1 R2 = 100 25 = 20 k
R2
25
VCC =
VTH =
(5) = 1.0 V
R
R
+
100 + 25
2
1
V V BE (on )
1.0 0.7
I BQ = TH
=
= 0.00597 mA
RTH + (1 + )R E 20 + (121)(0.25)
I CQ = I BQ = 0.7164 mA
Now
gm =
I CQ
0.7164
= 27.55 mA/V
0.026
VT
VT (120 )(0.026 )
r =
=
= 4.355 k
0.7164
I CQ
We find
RTH [r + (1 + )R E ] = 20 [4.355 + (121)(0.25)] = 20 34.605 = 12.67 k
Then
RC
(120 )(4 )
12.67
A =
(0.9807 )
=
r + (1 + )R E 12.67 + 0.25 4.355 + (121)(0.25)
or
A = 13.6
______________________________________________________________________________________
TYU6.4
Av
RC
RE
As a first approximation,
Resulting gain is always smaller than this value. The effect of RS is very small.
RC
= 10
R
Set E
5 I C ( RC + RE ) + VCEQ
Now
5 = ( 0.5 )( RC + RE ) + 2.5
or
which yields RC + RE = 5 k
We have RC = 10 R E
so RE = 0.454 k and RC = 4.54 k
We have
I BQ =
and
I CQ
0.5
= 0.005 mA
100
RTH = ( 0.1)(1 + ) RE = ( 0.1)(101)( 0.454 )
Also
R2
VTH =
R1 + R2
1
VCC = RTH VCC
R
1
or
VTH =
1
23
( 4.59 )( 5 ) =
R1
R1
or RTH = 4.59 k
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
Also
VTH = I BQ RTH + VBE ( on ) + (1 + ) I BQ RE
so that
23
= ( 0.005 )( 4.59 ) + 0.7 + (101)( 0.005 )( 0.454 )
R1
R1 = 24.1 k
which yields
Since R1 R2 = 4.59 k , then R2 = 5.67 k
______________________________________________________________________________________
TYU6.5
As a first approximation
R
Av C
RE
Set
RC
=9
RE
Now
VCC I CQ ( RC + RE ) + VECQ
7.5 = ( 0.6 )( 9 RE + RE ) + 3.75
which yields
RE = 0.625 k and RC = 5.62 k
We have
RTH = ( 0.1)(1 + ) RE = ( 0.1)(101)( 0.625 )
or RTH = 6.31 k
Also
VTH =
1
1
RTH VCC = ( 6.31)( 7.5 )
R1
R1
We have
I BQ =
and
I CQ
0.6
= 0.006 mA
100
V CC = (1 + )I BQ R E + V EB (on ) + I BQ RTH + VTH
7.5 = (101)( 0.006 )( 0.625 ) + 0.7 + ( 0.006 )( 6.31) +
1
( 6.31)( 7.5)
R1
which yields
R1 = 7.41 k
Since RTH = R1 R 2 = 6.31 k , then R 2 = 42.5 k
_____________________________________________________________________________
TYU6.6
We have
Av =
R
RC
= ( 0.95 ) C
r + (1 + ) RE
RE
or
2
Av = ( 0.95)
= 4.75
0.4
Assume, from Example 6.5 that, r = 1.2 k
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
Then
( 2)
1.2 + (1 + )( 0.4 )
or
= 4.75
= 76
_____________________________________________________________________________
TYU6.7
Dc analysis: by symmetry, VTH = 0
RTH = R1 R 2 = 20 20 = 10 k
We can write
0 0.7 ( 5 )
= 0.00672 mA
I BQ =
10 + (126 )( 5 )
I CQ = I BQ = (125 )( 0.00672 ) = 0.84 mA
Small-signal transistor parameters:
VT (125 )( 0.026 )
r =
=
= 3.87 k
I CQ
0.84
gm =
ro =
I CQ
VT
0.84
= 32.3 mA / V
0.026
VA
200
=
= 238 k
I CQ 0.84
(a) We can write
V o = g mV ro RC R L
so
A =
or
(b)
and V = V s
Vo
= g m ro RC R L = (32.3) 238 2.3 5
Vs
A = 50.5
Ro = ro RC = 238 2.3 = 2.28 k
______________________________________________________________________________________
TYU6.8
We find
I CQ = 0.418 mA,
121
VCEQ = 5 ( 0.418 )( 5.6 )
( 0.418 )( 0.6 )
120
or V CEQ = 2.41 V
So
vCE = ( 2.41 0.5 ) 2
, or vCE = 3.82 V
______________________________________________________________________________________
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
TYU6.9
For I CQ I EQ ,
VCEQ = 10 I CQ (4 + 4 ) = 10 I CQ (8)
I C = I CQ 0.1
VCE = VCEQ 0.7
VCE = I C (4 ) = I CQ 0.1 (4 ) = VCEQ 0.7
So
VCEQ = I CQ 0.1 (4 ) + 0.7
Then
(I
CQ
0.1 (4 ) + 0.7 = 10 I CQ (8) I CQ = 0.8083 mA
VCEQ = 10 (0.8083 )(8) VCEQ = 3.533 V
Then peak-to-peak values are
VCE = (3.533 0.7 )(2 ) = 5.67 V
I C = (0.8083 0.1)(2) = 1.42 mA
______________________________________________________________________________________
TYU6.10
We can write
0 0.7 ( 10 )
6.60 A
I BQ =
100 + (131)(10 )
I CQ = (130 )( 6.60 A) = 0.857 mA
Assume nominal small-signal parameters of:
hie = 4 k , h fe = 134
hre = 0, hoe = 12 S
1
= 83.3 k
hoe
We find
1
Rib = hie + (1 + h fe ) RE RL
h
oe
= 4 + (135 )(10 || 10 || 83.3) = 641 k
To find the voltage gain:
R B Rib
100 641
V s =
Vs =
V s = (0.896 )V s
R B Rib + R S
100 641 + 10
Also
1 + h fe R
Vo
=
V s hie + 1 + h fe R
where
R = RE RL
Then
Av =
1
= 10 10 83.3 = 4.72 k
hoe
Vo ( 0.896 )(135 )( 4.72 )
=
= 0.891
4 + (135 )( 4.72 )
Vs
To find the current gain
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
RE 1
hoe
I
Ai = o =
Ii
1
RE h + RL
oe
1 + h fe
) R
RB
B + Rib
10 83.3
(135) 100
=
10 83.3 + 10
100 + 641
or
Ai = 8.59
To find the output resistance:
1 hie + R S R B
Ro = R E
hoe
1 + h fe
= 10 83.3
4 + 10 100
135
R o = 96.0
_____________________________________________________________________________
TYU6.11
RTH = R1 R2 = 50 50 = 25 k
R2
1
VCC = (5) = 2.5 V
VTH =
2
R1 + R 2
Now
V VEB ( on ) VTH
I BQ = CC
RTH + (1 + ) RE
=
5 0.7 2.5
= 0.00793 mA
25 + (101)( 2 )
and
I CQ = (100 )( 0.00793) = 0.793 mA
Small-signal transistor parameters:
I CQ 0.793
=
= 30.5 mA / V
gm =
0.026
VT
r =
ro =
VT
I CQ
(100 )( 0.026 )
0.793
= 3.28 k
VA
125
=
= 158 k
I CQ 0.793
(a) Define
R = RE RL ro = 2 0.5 158 0.40 k
Av =
(1 + ) R
(101)( 0.4 )
=
r + (1 + ) R 3.28 + (101)( 0.4 )
or A = 0.925
(b)
Rib = r + (1 + ) R = 3.28 + (101)( 0.4 )
Rib = 43.7 k
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
R o = R E ro
r
3.28
= 2 158
1+
101
or
Ro = 32.0
_____________________________________________________________________________
TYU6.12
(a) I BQ RB + VBE (on ) + (1 + )I BQ R E + V = 0
3. 3 0 . 7
= 0.001358 mA
100 + (121)(15)
= 0.1643 mA; I CQ = 0.1629 mA
I BQ =
I EQ
VCEQ = 6.6 (0.1643 )(15 ) = 4.14 V
(b)
A =
(1 + )(RE RL ) Ri
r + (1 + )(R E R L ) Ri + RS
We find
0.1629
= 6.265 mA/V
0.026
(120 )(0.026 ) = 19.15 k
r =
0.1629
Now
Rib = r + (1 + )(R E R L ) = 19.15 + (121)(15 2) = 232.7 k
gm =
Ri = Rib RB = 232.7 100 = 69.94 k
Then
(121)(15 2)
69.94
A =
= 0.892
19.15 + (121)(15 2) 69.94 + 2
Also
RB R E
100
15
= (121)
Ai = (1 + )
R
R
R
R
+
+
+
100
232
.
7
15 + 2
ib E
L
B
Ai = 32.1
(c) We found
Rib = 232.7 k
Now
r + R B RS
19.15 + 100 2
RE =
15 = 0.1745 15
Ro =
1+
121
R o = 172
___________________________________________________________________________________
TYU6.13
(a) dc analysis:
V VEB ( on ) 10 0.7
=
= 0.93 mA
I EQ = EE
10
RE
100
I CQ =
I EQ =
( 0.93) = 0.921 mA
101
1+
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
VECQ = VEE I EQ RE I CQ RC ( VCC )
= 10 ( 0.93)(10 ) ( 0.921)( 5 ) ( 10 )
or
VECQ = 6.1 V
(b) Small-signal transistor parameters:
VT (100 )( 0.026 )
r =
=
= 2.82 k
I CQ
0.921
I CQ
0.921
=
= 35.42 mA / V
0.026
VT
Small-signal current gain:
I o = g mV , and V = Vs
gm =
Also
Ii =
+ g mV = Vs
+ gm
RE r
RE r
Vs
Then
Ai =
Io
=
Ii
g m V
1
+ gm
V
R r
(35.42)(10 2.82)
g m (R E r )
1 + g m (R E r )
1 + (35.42 )(10 2.82 )
or AI = 0.987
(c) Small-signal voltage gain:
Vo = g mV RC = g mVs RC
Av =
Vo
= g m RC = ( 35.42 )( 5 )
Vs
Av = 177
or
___________________________________________________________________________
TYU6.14
(a) I BQ R B + V BE (on ) + (1 + )I BQ R E = V EE
3.3 0.7
= 0.001675 mA
100 + (121)(12 )
= 0.201 mA
I BQ =
I CQ
gm =
(b)
0.201
(120)(0.026) = 15.52 k ; r =
= 7.73 mA/V; r =
o
0.026
0.201
RE
Ai =
r
RE +
1
+
Ai = 0.654
1 +
RC
RC + R L
120
12
12
12 + 15.52 121 12 + 6
121
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
Now
RC R L r
12 6 15.52
R E RS = (7.73)
A = g m
121 12 0.5
R 1 +
0
.
5
A = (7.73)(8)(0.1012 ) = 6.26
(c)
Ri = R E
r
15.52
= 12
Ri = 127
1+
121
Ro = RC = 12 k
______________________________________________________________________________________
TYU6.15
dc analysis
5 = I BQ RB + VBE ( on ) + I EQ RE
I BQ =
5 0.7
4.3
=
RB + (101) RE RB + (101) RE
I CQ =
(100 )( 4.3)
RB + (101) RE
Also
5 = I CQ RC + VCEQ + I EQ RE 5
or
101
VCEQ = 10 I CQ RC +
RE
100
ac analysis :
Vo = g mV ( RC RL )
and
Vs = V
V
RB = V
r
RB
1 +
or
r
V = Vs
+
r
R
B
Then
V
Av = o =
( RC RL )
Vs r + RB
where
= g m r
For
I CQ = 1 mA,
r =
Then
Av = 20 =
VT
I CQ
(100 ) ( 2 2 )
2.6 + RB
which yields
RB = 2.4 k
(100 )( 0.026 )
1
= 2.6 k
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
Then from
I CQ = 1 =
(100)(4.3)
2.4 + (101)R E
we find
R E = 4.23 k
______________________________________________________________________________________
TYU6.16
(a) dc analysis
I
= 1 mA,
For EQ 2
100
I CQ 2 =
(1) = 0.990 mA
101
I EQ 2
1
I EQ1 =
=
= 0.0099 mA
1 + 101
I BQ1 =
I EQ1
1+
0.0099
= 0.000098 mA
101
I CQ1 = (100 )( 0.000098) = 0.0098 mA
VB1 = I BQ1 RB = ( 0.000098 )(10 )
VB1 = 0.00098 0
VE1 = 0.7 V
VE 2 = 1.4 V
I1 = I CQ1 + I CQ 2 = 0.0098 + 0.990 1 mA
VO = 5 (1)( 4 ) = 1 V
VCEQ 2 = 1 ( 1.4 ) = 2.4 V
VCEQ1 = 1 ( 0.7 ) = 1.7 V
(b) small-signal transistor parameters:
VT (100 )(0.026 )
=
= 265 k
r 1 =
0.0098
I CQ1
g m1 =
r 2 =
g m2 =
I CQ1
VT
0.0098
= 0.377 mA/V
0.026
VT (100 )(0.026 )
=
= 2.63 k
0.990
I CQ 2
I CQ 2
VT
0.990
= 38.1 mA/V
0.026
ro1 = ro 2 =
(c) small-signal voltage gain
Vo = ( g m1V 1 + g m 2V 2 ) RC
Vs = V 1 + V 2
V
1+
V 2 = 1 + g m1V 1 r 2 =
V 1r 2
r 1
r 1
1+
Vo = g m1V 1 + g m 2
r 2V 1 RC
r 1
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
1+
Vs = V 1 +
r 2V 1
r 1
r
= V 1 1 + (1 + ) 2
r 1
Vs
V 1 =
r
1 + (1 + ) 2
r 1
Now
r 2
g m1 + g m 2 (1 + ) RC
V
r 1
Av = o =
Vs
r
1 + (1 + ) 2
r 1
2.63
0.377 + ( 38.1)(101) 265 ( 4 )
Av =
2.63
1 + (101)
265
or
Av = 77.0
(d)
Ri = r 1 + (1 + ) r 2 = 265 + (101)( 2.63)
or
Ri = 531 k
_____________________________________________________________________________
TYU6.17
(a)
R1 + R2 + R3 =
RE =
9
= 90 k
0.1
0.7
= 0.7 k
1
R
V B1 = 0.7 + 0.7 = 1.4 V 3 (9 ) = 1.4 R3 = 14 k
90
R + R3
V B 2 = 0.7 + 2.5 + 0.7 = 3.9 V 2
(9 ) = 3.9 R2 = 25 k
90
Then R1 = 51 k
VC 2 = 0.7 + 2.5 + 2.5 = 5.7 V
So
9 5.7
= 3.3 k
RC =
1
1
(100)(0.026) = 2.6 k
= 38.46 mA/V; r =
(b) g m =
1
0.026
r
2 2.6
(c) A = g m1 g m 2 2 (RC R L ) = (38.46 )
(3.3 10 ) = 94.5
101
1+ 2
______________________________________________________________________________________
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
TYU6.18
(a) dc analysis
RTH = R1 R2 = 125 30 = 24.2 k
R2
30
VTH =
VCC =
(12 )
+
R
R
125 + 30
1
2
or
VTH = 2.32 V
Now
VTH = I BQ RTH + VBE ( on ) + (1 + ) I BQ RE
2.32 0.7
= 0.0250 mA
24.2 + ( 81)( 0.5 )
I BQ =
I CQ = ( 80 )( 0.025) = 2.00 mA
1+
VCEQ = VCC I CQ RC +
RE
81
= 12 ( 2 ) 2 + ( 0.5 )
80
or
VCEQ = 6.99 V
Power dissipated in RC :
2
PRC = I CQ
RC = ( 2.0 ) ( 2 ) = 8.0 mW
2
Power dissipated in R L :
I LQ = 0 PRL = 0
Power dissipated in transistor:
PQ = I BQVBEQ + I CQVCEQ
= ( 0.025 )( 0.7 ) + ( 2.0 )( 6.99 ) = 14.0 mW
(b) With
vs = 18cos t ( mV )
VT
r =
I CQ
(80 )( 0.026 )
2.0
= 1.04 k
We can write
vce =
(R
RL ) VP cos t
Power dissipated in R L :
pRL =
=
vce ( rms )
RL
1
1
2 2 103
1 1
=
( RC RL ) VP
2 RL r
80
( 2 2 ) ( 0.018)
1.04
or
pRL = 0.479 mW
Power dissipated in RC :
Since RC = RL = 2 k , , we find
pRC = 8.0 + 0.479 = 8.48 mW
Microelectronics: Circuit Analysis and Design, 4th edition
Chapter 6
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
PQ I CQ VCEQ
VP
(RC R L )
2
2
80
0.018
2 10 3 2 10 3
= 2 10 3 (6.99)
3
1.04 10 2
or
pQ = 13.0 mW
_____________________________________________________________________________
TYU6.19
(a) dc analysis
RTH = R1 R2 = 53.8 10 = 8.43 k
R2
10
VTH =
VCC =
( 5)
53.8 + 10
R1 + R2
or
VTH = 0.7837 V
Now
0.7837 0.7
I BQ =
= 0.00993 mA
8.43
I CQ = (100 )( 0.00993) = 0.993 mA
VCEQ = VCC I CQ RC
2.5 = 5 ( 0.993) RC
which yields
RC = 2.52 k
( b)
Power dissipated in RC :
2
PRC = I CQ
RC = ( 0.993 ) ( 2.52 )
2
or
PRC = 2.48 mW
Power dissipated in transistor:
PQ I CQVCEQ = ( 0.993)( 2.5)
or
PQ = 2.48 mW
(c) ac analysis
Maximum ac collector current:
ic = ( 0.993) cos t ( mA)
Power dissipated in RC :
pRC =
1
1
2
2
( 0.993) RC = ( 0.993) ( 2.52 )
2
2
or
pRC = 1.24 mW
Now
pRC
1.24
Fraction =
=
= 0.25
PRC + PQ 2.48 + 2.48
______________________________________________________________________________________
