Make Your Mark With a New
Caliber of Performance and Reliability
The 850 EVO enhances all aspects of daily computing
through the latest in advanced 3D V-NAND technology.
Upgrade virtually every aspect of your computers performance with Samsungs new 850 EVO, designed with the very
latest in state-of-the-art SSD advancements including 3D V-NAND technology. As the next generation beyond the
best-selling 840 EVO, youll get the 850 EVOs new three-dimensional chip design that enables superior performance,
greater reliability and superior energy efficiency so you can work and play faster and longer than ever before.
Features
What is 3D V-NAND and how does it
differ from existing technology?
Get into the fast lane with
the improved RAPID mode
Samsungs innovative 3D V-NAND flash memory
Samsungs Magician software supports RAPID mode
architecture breaks through density limitations,
for 2x faster performance3 by utilizing unused PC
performance and endurance of todays conventional
memory (DRAM) as high-speed cache storage. The
planar NAND architecture. Samsung 3D V-NAND
newest version of Samsung Magician supports up to
stacks 32 cell layers vertically resulting in higher
a 4GB cache on a system with 16GB of DRAM.
density and better performance utilizing a
PCMARK7 RAW(250GB) : 7500 > 15000(Rapid mode)
smaller footprint.
Optimize daily computing with
TurboWrite technology for unrivaled
read/write speeds
Guaranteed endurance and reliability
bolstered by 3D V-NAND technology
The 850 EVO delivers guaranteed endurance and
Achieve the ultimate read/write performance to
reliability by doubling the endurance4 compared to
maximize your everyday computing experience with
the previous generation 840 EVO5 and featuring a
Samsungs TurboWrite technology. You can obtain up
class-leading 5-year warranty. With enhanced
to 1.9x faster performance than the award-winning
long-term reliability, the 850 EVO assures long-term
Samsung 840 EVO1. The 850 EVO delivers
dependable performance of up to 30% longer than
class-leading performance in sequential read
the previous generation 840 EVO.
540 MB/s and write 520 MB/s speeds. Plus,
you also gain optimized random performance in all
QD for better real-world performance.
1
2
Random Write(QD32,120GB) : 36,000 IOPS(840 EVO) > 88,000 IOPS(850 EVO)
Performance compared to 3-Bit MLC-class SSD drives
Sustained Performance (250GB) 3300 IOPS (840 EVO) > 6500 IOPS (850
EVO), performance measured after 12-hour Random Write test.
Highest among 3-bit MLC-class SSD drives.
Features
Improved energy efficiency
enabled by 3D V-NAND
Level up to the 850 EVO simply
without any hassle
The 850 EVO delivers significantly longer battery life
In three simple steps the Samsungs One-stop
on your notebook with a controller designed and
Install Navigator software easily allows you to migrate
optimized for 3D V-NAND that supports Device Sleep
all the data and applications from your existing drive
for Windows at a highly efficient 2mW. The 850 EVO
to the 850 EVO. The included Samsung Magician
features 25% better power efficiency than the
software also allows you to set up, optimize and
840 EVO during write operations6 thanks to
manage your system for peak SSD performance.
ultraefficient 3D V-NAND only consuming half the
energy than that of traditional Planar 2D NAND.
6
Power (250GB) 3.2W (840 EVO) > 2.4W (850 EVO).
Secure valuable data through advanced
AES 256-bit encryption
Acquire an integrated in-house solution
consisting of top-quality components
The 850 EVO comes fortified with the latest
Samsung is the only SSD brand to design and
hardware-based full disk encryption engine. The AES
manufacture all its components in-house, allowing
256-bit hardware encryption secures data without
for complete optimized integration. The result
any performance degradation and complies with TCG
enhanced performance, lower power consumption
Opal 2.0. It is also compatible with Microsoft eDrive
with an up to 1GB LPDDR2 DRAM cache memory
IEEE1667 to integrate simply in the latest versions of
and improved energy efficiency with the MEX/MGX
Windows so your data is protected at all times for
controller all from the #1 memory manufacturer
your peace of mind.
in the world.
Comparison Chart
OPERATING FEATURES
Standard Operating Voltage 5V 5%
Power Consumption (Active ):
MZ-75E120B/AM
2.1W
MZ-75E250B/AM
2.4W
MZ-75E500B/AM
3.0W
MZ-75E1T0B/AM
4.0W
TRIM SUPPORT
Yes (Requires OS Support)
RAID SUPPORT
Yes (with RAID Controller)
TECH SUPPORT
1-800-SAMSUNG (1-800-726-7864)
ENCRYPTION
Yes, Class 0 (256-Bit AES), TCG/Opal v2.0,
MS eDrive (IEEE1667)
Power Consumption (Idle): 50mW
SOFTWARE COMPATIBILITY
Windows 8 (32-bit and 64-bit), Windows 7
(32-bit and 64-bit), Vista (SP1 and above),
XP (SP2 and above), Windows Server 2008
(32-bit and 64-bit), Windows Server 2003
(32-bit and 64-bit with SP2 and above)
TEMPERATURE
32F to 158F (Operating)
PRODUCT DIMENSION (W x H x L)
2.76 x .27 x 3.94 in.
2.5 Form Factor
Only 7mm Thick to Accommodate
Ultraportables and Netbooks
PRODUCT WEIGHT
1TB: Max. .12 lbs
MZ-75E1T0B/AM
MZ-75E500B/AM
MZ-75E250B/AM
MZ-75E120B/AM
MZ-7KE1T0
MZ-7KE512
MZ-7KE256
MZ-7KE128
1TB (1000GB)*
500GB
250GB
120GB
1TB (1,024GB)
512GB
256GB
128GB
SATA III
Type
Controller
WARRANTY
5 Years/150TBW
RELIABILITY (MTBF)
2.0M Hours
Memory Size
HUMIDITY
5% to 95%, non-condensing
Model Code
Samsung
MEX Controller
NAND Flash
Memory
SATA III
Samsung MEX Controller
Samsung MGX Controller
Samsung 32-Layer 3D V-NAND
Samsung 32-Layer 3D V-NAND
Seq. Read
Up to 540MB/sec
Up to 550MB/sec
Seq. Write
Up to 520MB/sec
Up to 520MB/sec
Ran. Read @
4KB/QD32
98000
98000
97000
94000
100,000
Ran. Write @
4KB/QD32
90000
90000
88000
88000
90,000
Up to 470MB/sec
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
2014 Samsung Electronics America, Inc. Samsung is a registered trademark of Samsung Electronics Co., Ltd. IEEE is a registered trademark of the Institute of Electrical and Electronic Engineers, Inc.
Microsoft is a registered trademark of Microsoft Corporation in the United States and/or other countries. Ultrabook is a trademark of Intel Corporation in the U.S. and/or other countries.
