Q2N2222

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Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCEO

40

Vdc

CollectorBase Voltage

VCBO

75

Vdc

EmitterBase Voltage

VEBO

6.0

Vdc

Collector Current Continuous

IC

600

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

625
5.0

mW
mW/C

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

1.5
12

Watts
mW/C

TJ, Tstg

55 to +150

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RJA

200

C/W

Thermal Resistance, Junction to Case

RJC

83.3

C/W

Operating and Storage Junction

Temperature Range

1
2

CASE 2911, STYLE 17

TO92 (TO226AA)

COLLECTOR
1
2
BASE

THERMAL CHARACTERISTICS
Characteristic

3
EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

V(BR)CEO

40

Vdc

CollectorBase Breakdown Voltage

(IC = 10
Adc, IE = 0)

V(BR)CBO

75

Vdc

EmitterBase Breakdown Voltage

(IE = 10
Adc, IC = 0)

V(BR)EBO

6.0

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

ICEX

10

nAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150C)

ICBO

0.01
10

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

IEBO

10

nAdc

Collector Cutoff Current

(VCE = 10 V)

ICEO

10

nAdc

Base Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

IBEX

20

nAdc

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
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(IC = 10 mAdc, IB = 0)

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Publication Order Number:

Q2N2222

Q2N2222
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Symbol

Min

Max

35
50
75
35
100
50
40

300

0.3
1.0

0.6

1.2
2.0

fT

300

MHz

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

8.0

pF

Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

25

pF

2.0
0.25

8.0
1.25

8.0
4.0

50
75

300
375

5.0
25

35
200

rbCc

150

ps

NF

4.0

dB

(VCC = 30 Vdc, VBE(off) = 2.0

2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)

td

10

ns

tr

25

ns

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)
Ad ) (Fi
(Figure 2)

ts

225

ns

tf

60

ns

Characteristic

Unit

ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55C)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)

hFE

CollectorEmitter Saturation Voltage(1)

(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

BaseEmitter Saturation Voltage(1)

(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

Vdc

Vdc

SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hre

SmallSignal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
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(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
Noise Figure
(IC = 100
Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)

X 104

mhos

SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time

1. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

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2

Q2N2222
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+
30 V

+
30 V
1.0 to 100 s,
DUTY CYCLE 2.0%

+16 V
0
-
2 V

200

0
1 k

< 2 ns

1.0 to 100 s,
DUTY CYCLE 2.0%

+16 V

CS* < 10 pF

-14 V

< 20 ns

1k

-
4 V

Figure 2. TurnOff Time

1000
700
500
hFE , DC CURRENT GAIN

CS* < 10 pF

1N914

Scope rise time < 4 ns

*Total shunt capacitance of test jig,
connectors, and oscilloscope.

Figure 1. TurnOn Time

200

TJ = 125C

300
200
25C

100
70
50

-55C

30

VCE = 1.0 V
VCE = 10 V

20
10
0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)

50

70

100

200

300

500 700 1.0 k

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. DC Current Gain

1.0
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TJ = 25C

0.8
0.6

IC = 1.0 mA

10 mA

150 mA

500 mA

0.4
0.2
0
0.005

0.01

0.02 0.03

0.05

0.1

0.2

0.3
0.5
1.0
IB, BASE CURRENT (mA)

2.0

Figure 4. Collector Saturation Region

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3

3.0

5.0

10

20

30

50

Q2N2222
200
100
70
50

tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0

30
20
10
7.0
5.0

200

ts = ts - 1/8 tf

100
70
50

tf

30
20
10
7.0
5.0

3.0
2.0
5.0 7.0

10

20 30
50 70 100
IC, COLLECTOR CURRENT (mA)

200 300

500

5.0 7.0 10

20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)

Figure 5. TurnOn Time

6.0

f = 1.0 kHz
8.0

4.0
2.0

IC = 50 A
100 A
500 A
1.0 mA

6.0
4.0
2.0

0
0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10

20

100 200

500 1.0 k 2.0 k

5.0 k 10 k 20 k

50 k 100 k

RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects

Figure 8. Source Resistance Effects

Ceb
10
7.0
5.0
Ccb

3.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)

20 30

50

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

f, FREQUENCY (kHz)

20

0.2 0.3

0
50

50 100

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30

CAPACITANCE (pF)

500

10

RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE

IC = 1.0 mA, RS = 150

500 A, RS = 200
100 A, RS = 2.0 k
50 A, RS = 4.0 k

8.0

300

Figure 6. TurnOff Time

NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

10

2.0
0.1

VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25C

300

t, TIME (ns)

t, TIME (ns)

500

IC/IB = 10
TJ = 25C

Figure 9. Capacitances

500
VCE = 20 V
TJ = 25C

300
200

100
70
50
1.0

2.0

3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 10. CurrentGain Bandwidth Product

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Q2N2222
1.0

+0.5

TJ = 25C

0
VBE(sat) @ IC/IB = 10

0.6

COEFFICIENT (mV/ C)

V, VOLTAGE (VOLTS)

0.8
1.0 V

VBE(on) @ VCE = 10 V
0.4
0.2
0

RVC for VCE(sat)

-
0.5
-
1.0
-
1.5
RVB for VBE

-
2.0
VCE(sat) @ IC/IB = 10

0.1 0.2

50 100 200
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)

-
2.5

500 1.0 k

Figure 11. On Voltages

0.1 0.2

0.5

1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)

Figure 12. Temperature Coefficients

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500

Q2N2222
PACKAGE DIMENSIONS
TO92 (TO226)
CASE 2911
ISSUE AL
A

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

R
P
L
SEATING
PLANE

DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

X X
G

H
V

C
SECTION XX

N
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

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INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---