OPA111

Low Noise Precision Difet

OPERATIONAL AMPLIFIER
FEATURES

APPLICATIONS

LOW NOISE: 100% Tested, 8nVHz max

(10kHz)

PRECISION INSTRUMENTATION
DATA ACQUISITION
TEST EQUIPMENT

LOW BIAS CURRENT: 1pA max

LOW OFFSET: 250V max
LOW DRIFT: 1V/C max
HIGH OPEN-LOOP GAIN: 120dB min
HIGH COMMON-MODE REJECTION:
100dB min

OPTOELECTRONICS
MEDICAL EQUIPMENTCAT SCANNER
RADIATION HARD EQUIPMENT

DESCRIPTION
The OPA111 is a precision monolithic dielectrically
isolated FET (Difet ) operational amplifier. Outstanding performance characteristics allow its use in the
most critical instrumentation applications.

Case and
Substrate

+VCC

Noise, bias current, voltage offset, drift, open-loop

gain, common-mode rejection, and power supply rejection are superior to BIFET amplifiers.

In
2
+In
3

Noise-Free Cascode*

Very low bias current is obtained by dielectric isolation with on-chip guarding.
Laser trimming of thin-film resistors gives very low
offset and drift. Extremely low noise is achieved with
patented circuit design techniques. A new cascode
design allows high precision input specifications and
reduced susceptibility to flicker noise.
Standard 741 pin configuration allows upgrading of
existing designs to higher performance levels.

Output
6
Trim

10k

1
Trim

10k

*Patented

2k

2k

2k

2k

VCC
4

BIFET National Semiconductor Corp., Difet Burr-Brown Corp.

SBOS138

International Airport Industrial Park Mailing Address: PO Box 11400

Tel: (520) 746-1111 Twx: 910-952-1111 Cable: BBRCORP

Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd. Tucson, AZ 85706

Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132

1984 Burr-Brown Corporation

PDS-526K

Printed in U.S.A. August, 1995

SPECIFICATIONS
ELECTRICAL
At VCC = 15VDC and TA = +25C unless otherwise noted.
OPA111AM
PARAMETER

CONDITION

MIN

OPA111BM

TYP

MAX

40
15
8
6
0.7
1.6
9.5
0.5

MIN

OPA111SM

TYP

MAX

80
40
15
8
1.2
3.3
15
0.8

30
11
7
6
0.6
1.2
7.5
0.4

100
2
110
3

500
5

MIN

TYP

MAX

UNITS

60
30
12
8
1
2.5
12
0.6

40
15
8
6
0.7
1.6
9.5
0.5

80
40
15
8
1.2
3.3
15
0.8

nV/Hz
nV/Hz
nV/Hz
nV/Hz
Vrms
Vp-p
fAp-p
fA/Hz

250
1
10

100
2
110
3

500
5

31

50
0.5
110
3

31

V
V/C
dB
V/V

INPUT
NOISE
Voltage, fO = 10Hz
fO = 100Hz
fO = 1kHz
fO = 10kHz
fB = 10Hz to 10kHz
fB = 0.1Hz to 10Hz
Current, fB = 0.1Hz to 10Hz
fO = 0.1Hz thru 20kHz

100%
100%
100%
100%
100%

Tested
Tested
Tested
Tested
Tested

(1)
(1)
(1)

VOLTAGE(2)

OFFSET
Input Offset Voltage
Average Drift
Supply Rejection

VCM = 0VDC
TA = TMIN to TMAX
VCC = 10V to 18V

90

100

90

CURRENT(2)

BIAS
Input Bias Current

VCM = 0VDC

0.8

0.5

0.8

pA

OFFSET CURRENT(2)
Input Offset Current

VCM = 0VDC

0.5

1.5

0.25

0.75

0.5

1.5

pA

IMPEDANCE
Differential
Common-Mode

1013 || 1
1014 || 3

VOLTAGE RANGE
Common-Mode Input Range
Common-Mode Rejection

1013 || 1
1014 || 3

1013 || 1
1014 || 3

|| pF
|| pF

VIN = 10VDC

10
90

11
110

10
100

11
110

10
90

11
110

V
dB

RL 2k

114

125

120

125

114

125

dB

20Vp-p, RL = 2k
VO = 10V, RL = 2k
Gain = 1, RL = 2k
10V Step

16
1

2
32
2
6
10

MHz
kHz
V/s
s
s

12
10
100
1000
40

V
mA

pF
mA

15

VDC

OPEN-LOOP GAIN, DC
Open-Loop Voltage Gain
FREQUENCY RESPONSE
Unity Gain, Small Signal
Full Power Response
Slew Rate
Settling Time, 0.1%
0.01%
Overload Recovery,
50% Overdrive(3)

Gain = 1

2
32
2
6
10

16
1

2
32
2
6
10

16
1

RATED OUTPUT
Voltage Output
Current Output
Output Resistance
Load Capacitance Stability
Short Circuit Current

RL = 2k
VO = 10VDC
DC, Open Loop
Gain = +1

11
5.5

10

12
10
100
1000
40

11
5.5

10

12
10
100
1000
40

11
5.5

10

POWER SUPPLY
Rated Voltage
Voltage Range, Derated
Performance
Current, Quiescent

15

15

5
IO = 0mADC

18
3.5

+85
+125
+150

25
55
65

2.5

2.5

18
3.5

+85
+125
+150

55
55
65

2.5

18
3.5

VDC
mA

+125
+125
+150

C
C
C
C/W

TEMPERATURE RANGE
Specification
Operating
Storage
Junction-Ambient

Ambient Temp.
Ambient Temp.
Ambient Temp.

25
55
65
200

200

200

NOTES: (1) Sample testedthis parameter is guaranteed. (2) Offset voltage, offset current, and bias current are measured with the units fully warmed up. (3) Overload
recovery is defined as the time required for the output to return from saturation to linear operation following the removal of a 50% input overdrive.

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the users own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURRBROWN product for use in life support devices and/or systems.

OPA111

ELECTRICAL (FULL TEMPERATURE RANGE SPECIFICATIONS)

At VCC = 15VDC and TA = TMIN to TMAX unless otherwise noted.
OPA111AM
PARAMETER

CONDITION

MIN

Ambient Temp.

25

TYP

OPA111BM
MAX

MIN

+85

25

TYP

OPA111SM
MAX

MIN

+85

55

TYP

MAX

UNITS

+125

1500
5
50

V
V/C
dB
V/V

TEMPERATURE RANGE
Specification Range
INPUT
OFFSET VOLTAGE(1)
Input Offset Voltage
Average Drift
Supply Rejection

VCM = 0VDC
VCC = 10V to 18V

86

220
2
100
10

1000
5

500
1

50

110
0.5
100
10

32

300
2
100
10

90

86

CURRENT(1)

BIAS
Input Bias Current

VCM = 0VDC

50

250

30

130

820

4100

pA

OFFSET CURRENT(1)
Input Offset Current

VCM = 0VDC

30

200

15

100

510

3100

pA

VOLTAGE RANGE
Common-Mode Input Range
Common-Mode Rejection

VIN = 10VDC

10
86

11
100

10
90

11
100

10
86

11
100

V
dB

RL 2k

110

120

114

120

110

120

dB

RL = 2k
VO = 10VDC
VO = 0VDC

10.5
5.25
10

11
10
40

11
5.25
10

11.5
10
40

11
5.25
10

11.5
10
40

V
mA
mA

OPEN-LOOP GAIN, DC
Open-Loop Voltage Gain
RATED OUTPUT
Voltage Output
Current Output
Short Circuit Current
POWER SUPPLY
Current, Quiescent

IO = 0mADC

2.5

3.5

2.5

3.5

2.5

3.5

mA

NOTES: (1) Offset voltage, offset current, and bias current are measured with the units fully warmed up.

CONNECTION DIAGRAM
Top View

ABSOLUTE MAXIMUM RATINGS

Supply ........................................................................................... 18VDC
Internal Power Dissipation(1) ......................................................... 750mW
Differential Input Voltage(2) .......................................................... 36VDC
Input Voltage Range(2) ................................................................ 18VDC
Storage Temperature Range ......................................... 65C to +150C
Operating Temperature Range ..................................... 55C to +125C
Lead Temperature (soldering, 10s) ............................................... +300C
Output Short Circuit Duration(3) .............................................. Continuous
Junction Temperature .................................................................... +175C

Substrate and Case

8

Offset
Trim 1
In 2

7 +VCC

OPA111

5 Offset
Trim

+In 3

Output

NOTES: (1) Packages must be derated based on JC = 150C/W or JA

= 300C/W. (2) For supply voltages less than 18VDC, the absolute
maximum input voltage is equal to +18V > VIN > VCC 6V. See Figure
2. (3) Short circuit may be to power supply common only. Rating applies
to +25C ambient. Observe dissipation limit and TJ.

V CC

PACKAGE INFORMATION
PACKAGE DRAWING
MODEL
OPA111AM
OPA111BM
OPA111SM

PACKAGE

NUMBER(1)

TO-99
TO-99
TO-99

001
001
001

NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix D of Burr-Brown IC Data Book.

ORDERING INFORMATION

MODEL
OPA111AM
OPA111BM
OPA111SM

TEMPERATURE

OFFSET
VOLTAGE,

PACKAGE

RANGE

MAX (V)

TO-99
TO-99
TO-99

25C to +85C
25C to +85C
55C to +125C

500
250
500

OPA111

DICE INFORMATION

PAD

FUNCTION

1
2
3
4
5
6
7
8

Offset Trim
In
+In
VS
Offset Trim
Output
+VS
Substrate

Substrate Bias: This Dielectrically-Isolated

Substrate is normally connected to common.

MECHANICAL INFORMATION
Die Size
Die Thickness
Min. Pad Size

OPA111AD DIE TOPOGRAPHY

MILS (0.001")

MILLIMETERS

95 x 71 5
20 3
4x4

2.41 x 1.80 0.13

0.51 0.08
0.10 x 0.10

Backing:
Transistor Count:

None
44

TYPICAL PERFORMANCE CURVES

TA = +25C, VCC = 15VDC unless otherwise noted.

INPUT CURRENT NOISE SPECTRAL DENSITY

INPUT VOLTAGE NOISE SPECTRAL DENSITY

1k

Voltage Noise (nV/ Hz)

Current Noise (fA/Hz

100

10

1
BM

0.1

100

AM, SM
BM
10

1
1

10

100

1k

10k

100k

1M

Frequency (Hz)

100

1k
Frequency (Hz)

OPA111

10

10k

100k

1M

TYPICAL PERFORMANCE CURVES (CONT)

TA = +25C, VCC = 15VDC unless otherwise noted.

TOTAL* INPUT VOLTAGE NOISE SPECTRAL

DENSITY vs SOURCE RESISTANCE

TOTAL* INPUT VOLTAGE NOISE (PEAK-TO-PEAK)

vs SOURCE RESISTANCE
1k

1k

Voltage Noise (nV/ Hz)

RS = 10M
Voltage Noise (Vp-p)

RS = 1M
100
RS = 100k

BM

10

RS = 100
*Includes contribution
from source resistance.

*Includes contribution
from source resistance.

100

BM
fB = 0.1Hz to 10Hz

10

1
0.1

10

100

1k

10k

104

100k

105

106

107

108

Frequency (Hz)

Source Resistance ()

VOLTAGE AND CURRENT NOISE SPECTRAL

DENSITY vs TEMPERATURE

BIAS AND OFFSET CURRENT

vs TEMPERATURE
1k

100

12

109

1010

1k

fO = 1kHz

0.1

4
75

50

25

25

50

75

100

10

0.1

50

25

25

50

75

Temperature (C)

Ambient Temperature (C)

BIAS AND OFFSET CURRENT

vs INPUT COMMON-MODE VOLTAGE

POWER SUPPLY REJECTION

vs FREQUENCY

1
Bias Current

Offset Current

0.1

0.1

0.01

0.01
10

10

100

0.01
125

1M

10M

140

Power Supply Rejection (dB)

Offset Current (pA)

Bias Current (pA)

BM

10

0.01

10

15

100

0.1

0.01
125

10

Bias Current (pA)

Current Noise (fA/Hz)

Offset Current (pA)

Voltage Noise (nV/Hz)

100
10

10

120
100
80
60
40
20
0

15

Common-Mode Voltage (V)

10

100

1k

10k

100k

Frequency (Hz)

OPA111

TYPICAL PERFORMANCE CURVES (CONT)

TA = +25C, VCC = 15VDC unless otherwise noted.

COMMON-MODE REJECTION
vs FREQUENCY

COMMON-MODE REJECTION
vs INPUT COMMON MODE VOLTAGE
120

120

Common-Mode Rejection (dB)

100
80
60
40
20

110

100

90

80

0
1

70
15

Frequency (Hz)

5
0
5
Common-Mode Voltage (V)

OPEN-LOOP FREQUENCY RESPONSE

GAIN-BANDWIDTH AND SLEW RATE

vs TEMPERATURE

10

100

1k

10k

100k

1M

10M

140

10

15

45

80

90
Phase
Margin
65C

60
Gain

40

135

Gain Bandwidth (MHz)

100

Phase Shift (Degrees)

Voltage Gain (dB)

120

10

20
0

180
1

10

100

1k

10k

100k

1M

75

50

25

Frequency (Hz)

25

50

75

0
125

100

125

Ambient Temperature (C)

GAIN-BANDWIDTH AND SLEW RATE

vs SUPPLY VOLTAGE

OPEN-LOOP GAIN vs TEMPERATURE

140

Voltage Gain (dB)

130

Slew Rate (V/s)

Gain Bandwidth (MHz)

100

10M

120

110

0
0

10

15

100
75

20

OPA111

50

25

25

50

Ambient Temperature (C)

Supply Voltage (VCC)

75

Slew Rate (V/s)

Common-Mode Rejection (dB)

140

TYPICAL PERFORMANCE CURVES (CONT)

TA = +25C, VCC = 15VDC unless otherwise noted.

COMMON-MODE REJECTION
vs INPUT COMMON-MODE VOLTAGE

MAXIMUM UNDISTORTED OUTPUT

VOLTAGE vs FREQUENCY
120

Common-Mode Rejection (dB)

Output Voltage (Vp-p)

30

20

10

10k

100k

100

90

80

70
15

0
1k

110

1M

10

Frequency (Hz)

15

100

40

Settling Time (s)

80

20
0
20

60
0.01%

40

0.1%

20

40

60
0

10

Time (s)

100

1k

Closed-Loop Gain (V/V)

SUPPLY CURRENT vs TEMPERATURE

INPUT OFFSET VOLTAGE WARM-UP DRIFT

20

Offset Voltage Change (V)

Output Voltage (mV)

10

SETTLING TIME vs CLOSED-LOOP GAIN

SMALL SIGNAL TRANSIENT RESPONSE

60

Supply Current (mA)

5
0
5
Common-Mode Voltage (V)

10

10

20
75

50

25

25

50

75

100

125

Ambient Temperature (C)

Time From Power Turn-On (Minutes)

OPA111

TYPICAL PERFORMANCE CURVES (CONT)

TA = +25C, VCC = 15VDC unless otherwise noted.

INPUT OFFSET VOLTAGE CHANGE

DUE TO THERMAL SHOCK

Offset Voltage Change (V)

150
AM
75
BM
0

25C

85C
TA = 25C to TA = 85C
Air Environment

75

150
1

Time From Thermal Shock (Minutes)

APPLICATIONS INFORMATION

2
I IN

OFFSET VOLTAGE ADJUSTMENT

Input Current (mA)

The OPA111 offset voltage is laser-trimmed and will require

no further trim for most applications. As with most amplifiers, externally trimming the remaining offset can change
drift performance by about 0.3V/C for each 100V of
adjusted offset. Note that the trim (Figure 1) is similar to
operational amplifiers such as 741 and AD547. The OPA111
can replace most other amplifiers by leaving the external
null circuit unconnected.

Maximum Safe Current

2
15

10

10

15

Input Voltage (V)

FIGURE 2. Input Current vs Input Voltage with VCC Pins

Grounded.
Static damage can cause subtle changes in amplifier input
characteristics without necessarily destroying the device. In
precision operational amplifiers (both bipolar and FET types),
this may cause a noticeable degradation of offset voltage and
drift. Static protection is recommended when handling any
precision IC operational amplifier.

+VCC
7
2
OPA111

Maximum Safe Current

INPUT PROTECTION
Conventional monolithic FET operational amplifiers require
external current-limiting resistors to protect their inputs
against destructive currents that can flow when input FET
gate-to-substrate isolation diodes are forward-biased. Most
BIFET amplifiers can be destroyed by the loss of VCC.

6
1

FIGURE 1. Offset Voltage Trim.

GUARDING AND SHIELDING

As in any situation where high impedances are involved,
careful shielding is required to reduce hum pickup in input
leads. If large feedback resistors are used, they should also
be shielded along with the external input circuitry.

Unlike BIFET amplifiers, The Difet OPA111 requires input

current limiting resistors only if its input voltage is greater
than 6V more negative than VCC. A 10k series resistor
will limit input current to a safe level with up to 15V input
levels, even if both supply voltages are lost.

Leakage currents across printed circuit boards can easily

exceed the bias current of the OPA111. To avoid leakage
problems, it is recommended that the signal input lead of the
OPA111 be wired to a Teflon standoff. If the OPA111 is to
be soldered directly into a printed circuit board, utmost care
must be used in planning the board layout. A guard pattern

5
4
VCC

10k to 1M trim potentiometer

(100k recommended).
10mV typical trim range.

OPA111

should completely surround the high impedance input leads

and should be connected to a low impedance point which is
at the signal input potential.

Voltage Noise Spectral Density, EO

Typical at 1kHz (nV/ Hz)

1k

The amplifier case should be connected to any input shield

or guard via pin 8. This insures that the amplifier itself is
fully surrounded by guard potential, minimizing both leakage and noise pickup (see Figure 3).
If guarding is not required, pin 8 (case) should be connected
to ground.

Non-Inverting

RS

100

EO = eN2 + (INRS)2 + 4kTRS

10

OPA111 + Resistor
Resistor Noise Only
OP-27 + Resistor

1
100

Buffer

OP-27 + Resistor
OPA111 + Resistor
Resistor Noise Only

EO

1k

10k

100k

BM
1M

10M

Source Resistance, RS ()

OPA111
In

8
6

Out

OPA111

In

FIGURE 4. Voltage Noise Spectral Density vs Source

Resistance.

Out

3
80

TO-99 Bottom View

4

In

2
OPA111
3

5
Input Bias Current (pA)

Inverting

Out
7

8
2

8
1

Board layout for input guarding: guard top and bottom of board.
Alternate: use Teflon standoff for sensitive input pins.
Teflon E. I. Du Pont de Nemours & Co.

TA = 25C; curves taken from

manufacturers' published
typical data.

60

LF156/157

40

20

LF155
AD547

OPA111
OP-15/16/17
"Perfect Bias Current Cancellation"

20
15

10

10

15

Common-Mode Voltage (VDC)

FIGURE 3. Connection of Input Guard.

FIGURE 5. Input Bias Currrent vs Common-Mode Voltage.

NOISE: FET VERSUS BIPOLAR

Low noise circuit design requires careful analysis of all
noise sources. External noise sources can dominate in many
cases, so consider the effect of source resistance on overall
operational amplifier noise performance. At low source
impedances, the lower voltage noise of a bipolar operational
amplifier is superior, but at higher impedances the high
current noise of a bipolar amplifier becomes a serious
liability. Above about 15k, the OPA111 will have a lower
total noise than an OP-27 (see Figure 4).

1000pF Polystyrene
1000M
2
3
Pyroelectric
Detector

BIAS CURRENT CHANGE

VERSUS COMMON-MODE VOLTAGE
The input bias current of most popular BIFET operational
amplifiers are affected by common-mode voltage (Figure 5).
Higher input FET gate-to-drain voltage causes leakage and
ionization (bias) currents to increase. Due to its cascode
input stage, the extremely low bias current of the OPA111 is
not compromised by common-mode voltage.

1000M

8
OPA111

Output

NOTE: Pyroelectric
detectors respond
to rate-of-change
(AC signal) only.

FIGURE 6. Pyroelectric Infrared Detector.

APPLICATIONS CIRCUITS
Figures 6 through 18 are circuit diagrams of various applications for the OPA111.

OPA111

46dBm to
20dBm
RF Input 1000pF

RFC

<1pF to prevent gain peaking.

10k

100

1000M

2
OPA111

3
H-P
HSCH-3486

eO

DC
Output

+15V
0.1F

Guard

1M

eO 1200mVDC/W
H-P 5082-4204
Pin Photodiode

Video bandwidth: DC to 50kHz

Output

5 x 108V/W

0.1F

0.01F

FIGURE 7. Zero-Bias Schottky Diode Square-Law RF

Detector.

OPA111
4

1000M
15V
Circuit must be well shielded.

FIGURE 10. Sensitive Photodiode Amplifier.

RF
500pA
IIN

100M
2
6

OPA111

Offset voltage =
255VDC maximum
with no offset adjust.

eO = 50mV

2
6

eO = IIN RF
5.34M*

OPA111BM

5.34M*

Output

Pin Photodiode
3

Input

1000pF

Light Rays

Scintillation Crystal

X-Rays (Pencil Beam)

2k
2.67M*

500pF

*For 50Hz use:

3.16M and 6.37M

500pF

FIGURE 11. 60Hz Reject Filter.

CF

100pF
1010

RF
Collimator

X-Ray Tube

FIGURE 8. Computerized Axial Tomography (CAT) Scanner Channel Amplifier.

Output

OPA111

eO

3
100pF

1010

eO = Q/CF
Low frequency cutoff =
1/(2 RFCF) = 0.16Hz

500

9.5k
Guard

+15V
8

7
OPA111

FIGURE 12. Piezoelectric Transducer Charge Amplifier.

1VDC
Output

4
5
1

pH Probe
R 500M
50mV Output

Offset Trim
100k
15V

1F
2

375.1k

187.5k
1F

8
OPA111

10

Out

FC = 0.6Hz
80dB at 60Hz

FIGURE 13. 0.6Hz Second-Order Low-Pass Filter.

FIGURE 9. High Impedance (1014) Amplifier.

OPA111

375.1k

In

10.5k 0.03F

<1pF to prevent peaking

Overload 0.1W input

0.01F

200M
+5VDC
73.2k
365

2
365

6
Input

1F

OPA111

20k

OPA111
0.01F

RT

Pin Diode*

Output

100k

10k
7

LM211

TTL
Output

0.1F

*Silicon Detector Corp.

SD-041-11-21-011

CT

Digital Common

G = 26dB
Midband

FIGURE 15. High Sensitivity (under 1nW) Fiber Optic

Receiver for 9600 Baud Manchester Data.

FIGURE 14. RIAA Equalized Phono Preamplifier.

100

10k
2

Input
3
100

10k

10k

10k

OPA111

10k
2
3

100

AV = 1010
eN = 1.9nV/Hz typ* at 10kHz
BW = 30kHz typ
GBW = 30.3MHz typ
VOS = 16V typ*
VOS/T = 0.16V/C typ*
IB = 10pA max
ZIN 1012 || 30pF

OPA111

10k
2
3

100

OPA111

10k
* Theoretical performance achievable
from OPA111BM with uncorrelated
random distribution of parameters.

2
3
100

10k

10k

OPA111

10k
2
3

10k

OPA111
2
6
3

Output

OPA37

N = 10 OPA111BM

FIGURE 16. N Stage Parallel-Input Amplifier for Reduced Relative Amplifier Noise at the Output.

11

OPA111

IB = 1pA
Gain = 100
CMRR 106dB
RIN = 1013

In

6
OPA111

RF

25k

25k

25k

5k
RG

101

RF
5k

Burr-Brown
INA105
Differential Amplifier

25k

2
6
OPA111

+In

Output

1
Differential Voltage Gain = 1 + 2RF/RG

FIGURE 17. FET Input Instrumentation Amplifier.

10pF

10k

1M

IN914*
2

Input

2N4117*
3507J

OPA111

Output

6
IN914*

8
30pF

*Reverse polarity for

negative peak detection.

FIGURE 18. Low-Droop Positive Peak Detector.

OPA111

12

0.01F
Polystyrene

Droop 100V/s

PACKAGE OPTION ADDENDUM

www.ti.com

19-Apr-2010

PACKAGING INFORMATION
Orderable Device

Status (1)

Package
Type

Package
Drawing

Pins Package Eco Plan (2)

Qty

OPA111AM

NRND

TO-99

LMC

20

Green (RoHS &

no Sb/Br)

AU

N / A for Pkg Type

OPA111BM

NRND

TO-99

LMC

Green (RoHS &

no Sb/Br)

AU

N / A for Pkg Type

OPA111SM

OBSOLETE

TO-99

LMC

TBD

Call TI

Call TI

OPA111SMQ

OBSOLETE

TO-99

LMC

TBD

Call TI

Call TI

Lead/Ball Finish

MSL Peak Temp (3)

(1)

The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.

Addendum-Page 1

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