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Semi 4 Ex Sol 3

This document contains solutions to exercises from Chapter 3 of Semiconductor Physics and Devices: Basic Principles, 4th edition by D. A. Neamen. Exercise 3.1 calculates the change in photon energy corresponding to a 10 meV change in electron energy in silicon. Exercise 3.2 calculates the electron energy corresponding to the second allowed energy level in an infinite square quantum well. Exercise 3.3 calculates the density of states in silicon for electrons and holes. Exercise 3.4 calculates the number of electrons in the conduction band of germanium at 300K above the conduction band edge.

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Devendra Chauhan
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348 views

Semi 4 Ex Sol 3

This document contains solutions to exercises from Chapter 3 of Semiconductor Physics and Devices: Basic Principles, 4th edition by D. A. Neamen. Exercise 3.1 calculates the change in photon energy corresponding to a 10 meV change in electron energy in silicon. Exercise 3.2 calculates the electron energy corresponding to the second allowed energy level in an infinite square quantum well. Exercise 3.3 calculates the density of states in silicon for electrons and holes. Exercise 3.4 calculates the number of electrons in the conduction band of germanium at 300K above the conduction band edge.

Uploaded by

Devendra Chauhan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOC, PDF, TXT or read online on Scribd
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Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3

By D. A. Neamen Exercise Solutions


______________________________________________________________________________________

Chapter 3
Exercise Solutions
Ex 3.1
1 Ex 3.3
E m 2
4 2m
3 / 2 2 eV

So
2 (a) N
h3
0
E dE

1
dE 2 m d m d
4 2m
3/ 2

2
E 3/ 2
2 eV
2
or h3 3 0


E

10
1.6 1012
19


4 2 9.11 10 31 3/ 2

m
9.11 10 31 10 5 6.625 10 34 3

1.76 10 6 m/s
or 1.76 10 4 cm/s
_______________________________________

2
3

2 1.6 10 19 3/ 2

3
1.28 10 28 m
Ex 3.2
or
At ka , we have 3
N 1.28 10 22 cm
sin a
1 8 cos a 4 2m
3/ 2
a 2 2 eV
(b) N E 3/ 2
From Example 3.2, we have 2 a 5.141 , h3 3 1eV

or E 2 7.958 10 19 J. 1.06286 10 56

At ka 2 , we see that 3 a 2 so
2mE 3

2
3

2 3 / 2 13 / 2 1.6 10 19 3/ 2

a 2
2 8.29 10 27 m 3
or or
N 8.29 10 21 cm 3
E3
2 2
2
_______________________________________
2ma 2


2 2 1.054 10 34 2 Ex 3.4


2 9.11 10 31 4.5 10 10 2
E

4 2m p 3/ 2

1.189 10 18 J N
E kT
h3
E E dE
Then
E E 3 E 2

4 2m p 3/2
2 E
E E
3/ 2
18 19
1.189 10 7.958 10 h 3
3 E kT
3.929 10 19 J
Or
3.929 10 19

4 2 0.56 9.11 10 31 3/ 2

E
1.6 10 19
2.46 eV
6.625 10 34 3

_______________________________________

2

1 0.0259 1.6 10
19
3/ 2

3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________
7.92 10 24 m 3
or
E EF 1
N 7.92 10 18 cm 3
exp
kT E EF
_______________________________________ 1 exp
kT
Ex 3.5
0.02
1
gi ! 10! 10 9 8! 45 E EF
1 exp

N i ! g i N i ! 8! 10 8! 8! 21 kT
_______________________________________
E EF E EF
Ex 3.6 exp 1 exp 1 0.02
kT kT
E EF
(a) f F E exp
kT
E c kT 4 E F
exp
kT
0.30 0.0259 4
exp
0.0259 Then
7.26 10 6
exp
E EF
0.02
E EF kT
(b) f F E exp
kT 1
E E F kT ln 3.9kT
0.30 0.0259 0.02
exp _______________________________________
0.0259
3.43 10 6
_______________________________________ Test Your Understanding Solutions
Ex 3.7 TYU 3.1
E EF At ka 2 , we see that 3 a 2 , so
f F E exp
kT 2mE 3
a 2
0.30 0.025 2
8 10 6 exp
kT or

exp
0.325
1.25 10 5 E3
2 2 2
kT 2ma 2
0.325

ln 1.25 10 5 11.736
2 2 1.054 10 34 2
kT

2 9.11 10 31 4.5 10 10 2

0.325 T 1.189 10 18 J
kT 0.02769 0.0259
11.736 300 At the other point, 4 a is in the range
so 2 4 a 3 . Then from
T 321 K sin 4 a
_______________________________________ 1 8 cos 4 a
4a
Ex 3.8 we find, by trial and error,
4 a 7.870 . Then
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

E4
7.870 2 2 We have E E c C1 k 2
2ma 2 E c 0.32 E c 1.6 10 19

7.870 2 1.054 10 34 2

2
2 9.11 10 31 4.5 10 10
2

C1 10

10 10
1.8649 10 18 J
Then so that C1 5.1876 10 39
E g E 4 E3 We have
2 m 2
m
1.8649 10 18 1.189 10 18 2C1 m o 2 m o C1
6.762 10 19 J
or
6.762 10 19
1.054 10 34 2

Eg 4.23 eV 29.11 10 5.1876 10


31 39
1.6 10 19
or
_______________________________________
m
1.175
mo
_______________________________________

TYU 3.4
We have E E C 2 k 2
TYU 3.2 E
0.875 E 1.6 10 19
From Example 3.2, for ka , 2
1a

C 2 10

12 10
and E1 2.972 10 19 J.
so that C 2 2.0426 10 38
For 0 a and ka 0 , we have
sin a
1 8 cos a m p 2
a We have
By trial and error, a 2.529 rad. mo 2m o C 2
Then

1.054 10 34 2

29.11 10 2.0426 10
2mE 31 38
a 2.529
2
m p
or 0.2985
2.529 2 1.054 10 34 2
mo
E
2.529 2 2
2ma 2
2 9.11 10 31 4.5 10 10 2 _______________________________________

1.9258 10 19 J TYU3.5
1
Then
1 f F E 1
E EF
1 exp
E 2.972 10 19 1.9258 10 19
kT
1.046 10 19 J
or EF E
exp
1.046 10 19
kT
E 0.654 eV
1.6 10 19 (a)
_______________________________________ 0.35 0.0259 2
1 f F E exp
0.0259
TYU 3.3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________
8.20 10 7
(b)
0.35 3 0.0259 2
1 f F E exp
0.0259
3.02 10 7

_______________________________________

TYU 3.6
We find
400
kT 0.0259 0.034533 eV
300
E c kT 4 E F
(a) f F E exp
kT

0.30 0.034533 4
exp
0.034533
4
1.31 10
0.30 0.034533
(b) f F E exp
0.034533
6.21 10 5
_______________________________________

TYU 3.7
We find
400
kT 0.0259 0.034533
300
(a)
0.35 0.034533 2
1 f F E exp
0.034533
2.41 10 5
(b)
0.35 3 0.034533 2
1 f F E exp
0.034533
8.85 10 6
_______________________________________

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