Gallium Nitride (GaN)
Revolutionizing Electronics Industry
-Mukul Khadke
In the past two decades, there has been
increasing research and industrial activity in Technical advantages
Silicon (Si) technology displaced almost all the
the area of gallium nitride electronics. GaN
earlier low power thermionic and
is a wide bandgap semiconductor. It is electromechanical devices, but fundamental
replacing silicon in power electronics. The material limitations have stalled its use in higher
wide bandgap allows larger flow of energy power applications. All power electronic
to move electrons in GaN. Its optoelectronic systems of the future will take full advantage of
and mechanical properties make it ideal for a wide bandgap devices such as GaN. The
advantages include:
variety of applications, including light-
emitting diodes (LEDs), high-temperature Reduced heat sink requirements.
transistors, sensors and biocompatible 80% reduction in system volume and
electronic implants in humans. weight.
Lower voltage drop for unipolar devices.
Increased output power.
Improved transient characteristics and
switching speed.
Reduced electrical noise from smaller
system packages.
Reduced electrical noise due to virtually
zero recovery charge
.
Application
GaN Systems develops and manufactures
gallium nitride transistors targeted at efficient
power conversion for solar, wind and smart-
grid, electric and hybrid vehicles, and high
efficiency power supply applications.
Switch mode power supplies (SMPS)
UPS & motor control
Cleantech solar, wind & smart grid.
Hybrid and EV battery control & health
management systems
Power factor correction controllers (PFC)
SCIENCE TECH MUKUL
Market Potential And
Estimation
The global Gan (gallium nitride) semiconductor
Japan is anticipated to have the significant market
devices market is witnessing significant growth over
share and dominate the gallium nitride wafer market
the forecast period. The number is anticipated to
over the forecast period. The market in Japan is
grow over the forecast period, with numerous start-
driven by the upsurge in applications and numerous
ups and semiconductor industry giants entering into
developments in the semiconductor industry. Japan
the field of gallium nitride semiconductor devices.
plays an important role among all geographical
Presently, the overall gallium nitride power
regions, regarding distribution, and being
semiconductors market accounts for less than 1.0 %
headquarters to several key players in this country.
of the total power semiconductors market. However,
Few of the foremost players in Japan for gallium
electronics players & power semiconductors are
nitride semiconductor devices include ROHM
anticipated to enter this new value chain, thus
Company Limited, Renesas Electronics, Toshiba
rapidly increasing its the percentage share over the
Corporation, and Nichia Corporation
forecast period.
By 2020, GaN-on-silicon (Si) devices are expected
to achieve price parity with -- and the same superior
performance as -- silicon MOSFETs and insulated-
gate bipolar transistors (IGBTs). When this
Geographically the global market for gallium nitride benchmark is reached, the GaN power market is
semiconductor devices is segmented into North expected to surpass $600 million in 2025. In
America, Asia-Pacific, Middle East and Asia, contrast, the more established SiC power market --
Europe and Latin America, while North America, mainly consisting of SiC power modules -- will hit
Asia Pacific, and Europe comprise maximum $3 billion in the same time period.
market share. Europe and North America are the
chief establishment base markets for gallium nitride GaN will rise and will be major contributor to the
semiconductor devices. These regions lead in electronics and power system market all over the
investments, innovation, company activities, and globe.
development. Hence, these areas are projected to
grow at a faster rate as compared to Asia Pacific
excluding Japan over the next seven years.
SCIENCE TECH MUKUL
