Scribd
Upload
59 views4 pages

2SD1880 NPN Power Transistor Specs

This document provides product specifications for the SavantIC Semiconductor 2SD1880 silicon NPN power transistor. The transistor is in a TO-3PML package and is suitable for applications such as color TV and display horizontal deflection output due to its high speed, high breakdown voltage, and built-in damper diode. Key specifications include an 800V collector-emitter sustaining voltage, 5V collector-emitter saturation voltage at 6A collector current, and 0.1-0.3us fall time. The document outlines maximum ratings, electrical characteristics, and package outline dimensions.

Uploaded by

Iee Jimmy Zambrano L
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
59 views4 pages

2SD1880 NPN Power Transistor Specs

This document provides product specifications for the SavantIC Semiconductor 2SD1880 silicon NPN power transistor. The transistor is in a TO-3PML package and is suitable for applications such as color TV and display horizontal deflection output due to its high speed, high breakdown voltage, and built-in damper diode. Key specifications include an 800V collector-emitter sustaining voltage, 5V collector-emitter saturation voltage at 6A collector current, and 0.1-0.3us fall time. The document outlines maximum ratings, electrical characteristics, and package outline dimensions.

Uploaded by

Iee Jimmy Zambrano L
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1880

DESCRIPTION
With TO-3PML package
High speed
High breakdown voltage
High reliability
Built in damper diode

APPLICATIONS
Color TV horizontal deflection output
Color display horizontal deflection output.

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 8 A

ICM Collector current-peak 30 A

PC Collector power dissipation 70 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1880

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 800 V

VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5 V

VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V

ICBO Collector cut-off current VCB=800V ;IE=0 10 A

IEBO Emitter cut-off current VEB=4V ;IC=0 40 130 mA

ICES Collector cut-off current VCE=1500V 1.0 mA

hFE-1 DC current gain IC=1A ; VCE=5V 8

hFE-2 DC current gain IC=6A ; VCE=5V 5 10

VF Diode forward voltage IEC=8A 2 V

IC=6A;RL=33.3@
tf Fall time 0.1 0.3 s
IB1=1.2A IB2=-2.4A;VCC=200V

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1880

PACKAGE OUTLINE

Fig.2 Outline dimensions

3
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1880

You might also like