2SK4115

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOS)

2SK4115
Switching Regulator Applications
Unit: mm

15.9max. 3.20.2

Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.)

2.0

1.0

4.5
High forward transfer admittance: Yfs = 5.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 720 V)

20.00.3
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

3.3max.

2.0

9.0
Absolute Maximum Ratings (Ta = 25C) 2.00.3

20.50.5
0.3
1.0 0.25

Characteristic Symbol Rating Unit

5.450.2 5.450.2
Drain-source voltage VDSS 900 V

4.8max.
0.3
0.60.1
1.8max.
Drain-gate voltage (RGS = 20 k) VDGR 900 V
Gate-source voltage VGSS 30 V

2.8
1 2 3
DC (Note 1) ID 7
Drain current A 1. GATE
Pulse (Note 1) IDP 21 2. DRAIN (HEATSINK)
3. SOURCE
Drain power dissipation (Tc = 25C) PD 150 W
JEDEC
Single pulse avalanche energy
EAS 491 mJ
(Note 2) JEITA SC-65
Avalanche current IAR 7 A TOSHIBA 216C1B
Repetitive avalanche energy (Note 3) EAR 15 mJ
Weight: 4.6 g (typ.)
Channel temperature Tch 150 C
Storage temperature range Tstg 55 to 150 C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristic Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 0.833 C/W

Thermal resistance, channel to ambient Rth (ch-a) 50 C/W

Note 1: Ensure that the channel temperature does not exceed 150C 1
during use of the device.

Note 2: VDD = 90 V, Tch = 25C, L = 18.4 mH, RG = 25 , IAR = 7 A

Note 3: Repetitive rating: pulse width limited by max junction temperature 3

This transistor is an electrostatic-sensitive device. Handle with care.

Start of commercial production

2007-02
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 2SK4115
Electrical Characteristics (Ta = 25C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 30 V, VDS = 0 V 10 A

Gate-source breakdown voltage V (BR) GSS IG = 10 A, VDS = 0 V 30 V
Drain cutoff current IDSS VDS = 720 V, VGS = 0 V 100 A
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V
Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 3.5 A 1.6 2.0
Forward transfer admittance Yfs VDS = 10 V, ID = 3.5 A 2.6 5.0 S
Input capacitance Ciss 1650
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 30 pF

Output capacitance Coss 140

Rise time tr 50
10 V ID = 3.5 A
VGS VOUT
Turn-on time ton 0V 90
RL = 114
50
Switching time ns
Fall time tf 70

VDD 400 V
Duty 1%, tw = 10 s
Turn-off time toff 240

Total gate charge

Qg 45
(gate-source plus gate-drain)
VDD 400 V, VGS = 10 V, ID = 7 A nC
Gate-source charge Qgs 24
Gate-drain (Miller) charge Qgd 21

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR 7 A

Pulse drain reverse current (Note 1) IDRP 21 A
Forward voltage (diode) VDSF IDR = 7 A, VGS = 0 V 1.7 V
Reverse recovery time trr IDR = 7 A, VGS = 0 V, 1400 ns
Reverse recovery charge Qrr dIDR/dt = 100 A/s 12 C

Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.

TOSHIBA [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

K4115 Part No. (or abbreviation code)
Lot No. Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
Note 4 The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.

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ID VDS ID VDS
5 10
Common source 10 6 10 Common source
Tc = 25C 8 8 6 Tc = 25C
Pulse test Pulse test
4 8 5.75
5.25
(A)

(A)
5.5
ID

ID
3 5 6
Drain current

Drain current
5.25
2 4
4.75
5

4.5
1 2 4.5

VGS = 4 V
VGS = 4 V
0 0
0 2 4 6 8 10 0 10 20 30 40 50

Drainsource voltage VDS (V) Drainsource voltage VDS (V)

ID VGS VDS VGS

12 20
Common source Common source
VDS = 10 V Tc = 25C
VDS (V)

Pulse test Pulse test

16
(A)

9
ID = 7 A
ID

12
Drainsource voltage

25
Drain current

100 3.5
3
4
Tc = 55C 1.7

0 0
0 2 4 6 8 10 0 4 8 12 16 20

Gatesource voltage VGS (V) Gatesource voltage VGS (V)

RDS (ON) ID
Yfs ID 10
100 Common source
(S)

Common source
Tc = 25C
VDS = 10 V
Drainsource ON-resistance
Yfs

Pulse test Pulse test

RDS (ON) ()

10
Forward tranfer admittance

VGS = 10,15 V
Tc = 55C 1
100

25
1

0.1 0.1
0.1 1 10 0.1 1 10

Drain current ID (A) Drain current ID (A)

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RDS (ON) Tc IDR VDS

5 100
Common source
Common source
VGS = 10 V
Tc = 25C

(A)
Pulse test
Drainsource ON-resistance

Pulse test
4

IDR
10
RDS (ON) ()

3.5

Drain reverse current

3

ID = 7 A 1.7
2
1

1
10

5 3 1 VGS = 0 V
0 0.1
80 40 0 40 80 120 160 0 0.4 0.8 1.2 1.6

Case temperature Tc (C) Drainsource voltage VDS (V)

C VDS Vth Tc
10000 5
Common source
VDS = 10 V
Vth (V)

ID = 1 mA
Ciss Pulse test
4
(pF)

1000
Gate threshold voltage
C

3
Coss
Capacitance

100

2
Crss

10
Common source
1
VGS = 0 V
f = 1 MHz
Tc = 25C
1 0
0.1 1 10 100 80 40 0 40 80 120 160

Drainsource voltage VDS (V) Case temperature Tc (C)

Dynamic input/output
PD Tc characteristics
200 500 20
Common source
ID = 7 A
(W)

(V)
VDS (V)

VDS Tc = 25C
Pulse test
400 16
VGS
PD

150
200V
Drain power dissipation

Gatesource voltage

300 12
Drainsource voltage

100 VDD =100 V 400V

200 8
VGS
50
100 4

0 0 0
0 40 80 120 160 200 0 20 40 60 80 100

Case temperature Tc (C) Total gate charge Qg (nC)

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rth tw

Normalized transient thermal impedance

Duty=0.5

0.2
rth (t)/Rth (ch-c)

0.1

0.05

0.02
Single pulse
PDM
0.01
t

Duty = t/T
Rth (ch-c) = 0.833C/W

Pulse width tw (s)

Safe operating area EAS Tch

100 1000
EAS (mJ)

ID max (Pulse) * 800

100 s *
10
ID max (Continuous) 600
Avalanche energy
(A)

1 ms *

400
ID

DC operation
Drain current

1 Tc = 25C
200

0
25 50 75 100 125 150

0.1 Channel temperature (initial) Tch (C)

* Single pulse Ta=25

Curves must be derated

linearly with increase in
temperature.
VDSS max BVDSS
0.01 15 V
1 10 100 1000
IAR
15 V
Drainsource voltage VDS (V)
VDD VDS

Test circuit Waveform

RG = 25 1 B VDSS
AS = L I2
VDD = 90 V, L = 18.4 mH 2 B
VDSS VDD

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 2SK4115

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in this document, and related hardware, software and systems (collectively "Product") without notice.

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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
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except in compliance with all applicable export laws and regulations.

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

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