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2SB616 SavantIC

This document provides product specifications for SavantIC Semiconductor's 2SB616 silicon PNP power transistor. The transistor features a TO-3PN package and is intended for power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -100V, collector current of -5A, and DC current gain of 50 typical at IC=-1A and VCE=-5V.

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193 views3 pages

2SB616 SavantIC

This document provides product specifications for SavantIC Semiconductor's 2SB616 silicon PNP power transistor. The transistor features a TO-3PN package and is intended for power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -100V, collector current of -5A, and DC current gain of 50 typical at IC=-1A and VCE=-5V.

Uploaded by

MrGC1964
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SB616

DESCRIPTION
With TO-3PN package
Complement to type 2SD586

APPLICATIONS
For power amplifier applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Tc=25 )

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -100 V

VCEO Collector-emitter voltage Open base -100 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -5 A

PC Collector power dissipation TC=25 60 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SB616

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -100 V

V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -100 V

V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V

VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V

VBE Base-emitter on voltage IC=-1A;VCE=-5V -1.5 V

ICBO Collector cut-off current VCB=-100V; IE=0 -0.1 mA

IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA

hFE-1 DC current gain IC=-1A ; VCE=-5V 50

fT Transition frequency IC=-1A ; VCE=-5V 11 MHz

COB Collector output capacitance IE=0;f=1MHz;VCB=-10V 140 pF

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SB616

PACKAGE OUTLINE

Fig.2 outline dimensions

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