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Exaaam MS A

This document provides specifications, calculations, schematics, and descriptions for transistor-based AND and OR logic gates. It specifies operating parameters, calculates resistor values, shows schematics, includes simulation results, and describes the logic functions of the AND and OR gates based on the transistor circuit configurations.

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Ann janssen
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55 views6 pages

Exaaam MS A

This document provides specifications, calculations, schematics, and descriptions for transistor-based AND and OR logic gates. It specifies operating parameters, calculates resistor values, shows schematics, includes simulation results, and describes the logic functions of the AND and OR gates based on the transistor circuit configurations.

Uploaded by

Ann janssen
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Limit of Operation Given

IB = IC / = 400 uA VCC = 17 V
15uA IC 600mA
0.4V VCE 40V IE = (+1)IB = 80.4 mA ICQ = 80 mA
VCEIC 625mW
VE = 5.4 V VCEQ = 8.5 V

(Note: 5.4 V was used to prevent = 200


insufficiency of voltage for the 5V indicator)

Computations for AND Gate Computations for OR Gate


RE = VE / IE RE = VE / IE
RE = 67.164 RE = 67.164
RESTDVAL = 68 RESTDVAL = 68

VCC IBRB1 VBE VCE VE = 0 VCC (IC+IB)RC VCE VE = 0


RB1 = 6.0K RC = 38.557
RB1STDVAL = 6.2K RCSTDVAL = 39.0

VCC IBRB2 VBE VE = 0 VCC (IC+IB)RC IBRB1 VBE VE = 0


RB2 = 27.25K RB1 = RB2 = 19.50K
RB2STDVAL = 27.0K RB1&2STDVAL = 19.6K
Power Dissipation Curve/Load Line Analysis
700

600

500

400
Ic (mA)

300

200

100

0
0 5 10 15 20 25 30 35 40 45
Vce (V)

@ICMAX = 600mA @VCEMAX = 40V ICSAT = 160mA


625 625
VCE = = 1.04V IC = = 15.63mA ICQ = 80mA
600 40

@ICMAX = 450mA ICMAX = 600mA


@VCEMAX = 30V
625 625 VCC = 17V
VCE = = 1.39V IC = = 20.83mA
450 30
VCEQ = 8.5V
@ICMAX = 300mA @VCEMAX = 20V
VCEMAX = 40V
625 625
VCE = = 2.08V IC = = 31.25mA
300 20

@ICMAX = 150mA @VCEMAX = 10V

625 625
VCE = = 4.17V IC = = 62.5mA
150 10
SCHEMATIC FOR AND GATE

SCHEMATIC FOR OR GATE


SIMULATION FOR AND GATE
SIMULATION FOR OR GATE
Transistor AND Gate

The use of transistors for the construction of logic


gates depends upon their utility as fast switches.
When the base-emitter diode is turned on enough to
be driven into saturation, the collector voltage with
respect to the emitter may be near zero and can be
used to construct gates for the TTL logic family. For
the AND logic, the transistors are in series and both
transistors must be in the conducting state to drive the
output high.

Transistor OR Gate

The use of transistors for the construction of logic


gates depends upon their utility as fast switches.
When the base-emitter diode is turned on enough to
be driven into saturation, the collector voltage with
respect to the emitter may be near zero and can be
used to construct gates for the TTL logic family. For
the OR logic, the transistors are in parallel and the
output is driven high if either of the transistors is
conducting.

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