2N7635-GA

 
Normally – OFF Silicon Carbide VDS = 650 V
Super Junction Transistor ID = 4A
RDS(ON) = 415 mΩ
Features Package
 250 °C maximum operating temperature  RoHS Compliant
 Temperature independent switching performance
 Gate oxide free SiC switch D
 Suitable for connecting an anti-parallel diode
 Positive temperature coefficient for easy paralleling
 Low gate charge G
 Low intrinsic capacitance
S
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TO – 257 (Hermetic Package)

Advantages Applications
 Low switching losses  Ideal for Aerospace and Defense Applications
 Higher efficiency  Down Hole Oil Drilling, Geothermal Instrumentation
 High temperature operation  Hybrid Electric Vehicles (HEV)
 High short circuit withstand capability  Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
 Induction Heating
 Uninterruptible Power Supply (UPS)
 Motor Drives

Maximum Ratings at Tj = 250 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit
Drain – Source Voltage VDS VGS = 0 V 650 V
Continuous Drain Current ID TC = 165 °C 4 A
Gate Peak Current IGM 5 A
Reverse Gate – Source Voltage VGS 200 V
Reverse Drain – Source Voltage VDS 40 V
Power Dissipation Ptot TC = 25 °C 7 W
Operating and Storage Temperature Tj, Tstg -55 to 250 °C

Electrical Characteristics at Tj = 250 °C, unless otherwise specified

Values
Parameter Symbol Conditions Unit
min. typ. max.

On Characteristics
ID = 4 A, IG = 100 mA, Tj = 25 °C 1.7
Drain – Source On Voltage VDS(ON) ID = 4 A, IG = 250 mA, Tj = 175 °C 3.2 V
ID = 4 A, IG = 250 mA, Tj = 250 °C 4.7
ID = 4 A, IG = 100 mA, Tj = 25 °C 415
Drain – Source On Resistance RDS(ON) ID = 4 A, IG = 250 mA, Tj = 175 °C 820 mΩ
ID = 4 A, IG = 250 mA, Tj = 250 °C 1310
IG = 500 mA, Tj = 25 °C 3.3
Gate Forward Voltage VGS(FWD) V
IG = 500 mA, Tj = 250 °C 3.2
VDS = 5 V, ID = 5 A, Tj = 25 °C 120
DC Current Gain β
VDS = 5 V, ID = 5 A, Tj = 250 °C 85

Off Characteristics
VR = 650 V, VGS = 0 V, Tj = 25 °C 7
Drain Leakage Current IDSS VR = 650 V, VGS = 0 V, Tj = 175 °C 25 nA
VR = 650 V, VGS = 0 V, Tj = 250 °C 105

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Electrical Characteristics at Tj = 250 °C, unless otherwise specified

Values
Parameter Symbol Conditions Unit
min. typ. max.

Dynamic Characteristics
Input Capacitance Ciss 324 pF
VDS = 35 V, VGS = 0 V,
Output Capacitance Coss f = 1 MHz, Tvj = 25 °C
45 pF
Reverse Transfer Capacitance Crss 45 pF

Switching Characteristics
Turn On Delay Time td(on) 5 ns
Rise Time tr VDD = 400 V, ID = 5 A, 15 ns
Turn Off Delay Time td(off) RG(on) = RG(off) = 44 Ω, 74 ns
Fall Time tf VGS = -8/15 V ,Tj = 175 ºC 14 ns
Turn-On Energy Per Pulse Eon Refer to Figure 10 for gate drive 24 µJ
current waveforms
Turn-Off Energy Per Pulse Eoff 7 µJ
Total Switching Energy Ets 31 µJ
Turn On Delay Time td(on) 9 ns
Rise Time tr VDD = 400 V, ID = 5 A, 24 ns
Turn Off Delay Time td(off) RG(on) = RG(off) = 44 Ω, 114 ns
Fall Time tf VGS = -8/15 V ,Tj = 250 ºC 17 ns
Turn-On Energy Per Pulse Eon Refer to Figure 10 for gate drive 54 µJ
current waveforms
Turn-Off Energy Per Pulse Eoff 10 µJ
Total Switching Energy Ets 64 µJ

Thermal Characteristics
Thermal resistance, junction - case RthJC 4.2 °C/W

Figure 1: Typical Output Characteristics at 25 °C Figure 2: Typical Output Characteristics at 175 °C

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Figure 4: Typical Gate Source I-V Characteristics vs.

Figure 3: Typical Output Characteristics at 250 °C
Temperature

Figure 5: Normalized On-Resistance and Current Gain vs.

Figure 6: Typical Blocking Characteristics
Temperature

Figure 8: Typical Turn On Energy Losses and Switching

Figure 7: Typical Capacitance vs Drain-Source Voltage
Times vs. Temperature

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Figure 9: Typical Turn Off Energy Losses and Switching

Figure 10: Typical Gate-Source Switching Waveforms
Times vs. Temperature

Package Dimensions:

TO-257 PACKAGE OUTLINE

NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS

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Revision History
Date Revision Comments Supersedes
2012/08/24 0 Initial release

Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166

GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.

GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.

Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.

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