SMD NPN Transistor
Features:
• Silicon planar epitaxial transistors
• General purpose NPN transistors
Pin Configuration:
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings:
Description Symbol BC847C Units
Collector-Emitter Voltage (VBE = 0) VCES 50
V
Collector-Emitter Voltage (Open Base) VCEO 45
Collector Current (Peak Value) ICM Max. 200 mA
Total Power Dissipation up to Ta = 25°C Ptot 250 mW
Junction Temperature Tj 150 °C
Small-Signal Current Gain
hfe 125 -
IC = 2mA; VCE = 5V; f = 1kHz
Min.
Transition Frequency at f = 100MHz
fT >100 MHz
IC = 10mA; VCE = 5V
Noise Figure at RS = 2kW
IC = 200mA; VCE = 5V F Typ. 2 dB
f = 1kHz; B = 200Hz
Ratings (at TA = 25°C unless otherwise specified)
Description Symbol BC847B Units
Collector-Base Voltage (Open Emitter) VCBO
50
Collector-Emitter Voltage (VBE = 0) VCES
V
Collector-Emitter Voltage (Open Base) VCEO Max. 45
Emitter-Base Voltage (Open Collector) VEBO 6
Collector Current (DC) IC 100 mA
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SMD NPN Transistor
Ratings (at TA = 25°C unless otherwise specified)
Description Symbol BC847B Units
Collector Current (Peak Value) ICM
Emitter Current (Peak Value) -IEM 200 mA
Max.
Base Current (Peak Value) IBM
Total Power Dissipation upto Ta: 25°C Ptot 250 mW
Storage Temperature Tstg - -55 to +150
°C
Junction Temperature Tj Max. 150
Thermal Resistance
From Junction to Ambient Rth (j-a) = 500 K/W
Characteristics (Tj = 25°C unless otherwise specified)
Collector Cut off Current
15 nA
IE = 0; VCB = 30V ICBO <
5 µA
IE = 0; VCB = 30V; Tj = 150°C
Base-Emitter Voltage VBE Typ. 660
IC = 2mA; VCE = 5V
580 to 700
IC = 10mA; VCE = 5V VBE < 770
Saturation Voltage VCE (sat) Typ. 90
mV
< 250
IC = 10mA; IB = 0.5mA VBE (sat) Typ. 700
VCE (sat) Typ. 200
IC = 100mA; IB = 5mA < 600
VBE (sat) Typ. 900
Collector Capacitance at f = 1MHz
CC Typ. 2.5 pF
IE = Ie = 0; VCB = 10V
Transition Frequency at f = 100MHz
fT > 100 MHz
IC = 10mA; VCE = 5V
Noise Figure at RS = 2KW
Typ. 2
IC = 200µA; VCE = 5V; F dB
Max. 10
f = 1kHz; B = 200Hz
DC Current Gain Typ. 270
IC = 10mA; VCE = 5V > 420
hFE -
Typ. 520
IC = 2mA; VCE = 5V < 800
Small Signal Current Gain at f = 1 kHz Min. 125
hfe -
IC = 2mA; VCE = 5V Max. 900
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SMD NPN Transistor
Pin Configuration:
1. Base
2. Emitter
3. Collector
Dimensions : Millimetres
Part Number Table
Description Part Number
Transistor, NPN, SOT-23 BC847C
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
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