DSSK 60-02A

DSSK 60-02AR

Power Schottky Rectifier IFAV = 2x30 A

with common cathode VRRM = 200 V
VF = 0.70 V

VRSM VRRM Type

A C A TO-247 AD ISOPLUS 247TM
Version A Version AR
V V
200 200 DSSK 60-02A A A
C C
200 200 DSSK 60-02AR A A
C (TAB) Isolated
back surface *
* Patent pending
C = Cathode, A = Anode, TAB = Cathode

Symbol Conditions Maximum Ratings Features

IFRMS 70 A • International standard package
IFAV TC = 155°C; rectangular, d = 0.5 30 A • Very low VF
IFAV TC = 155°C; rectangular, d = 0.5; per device 60 A • Extremely low switching losses
• Low IRM-values
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 600 A • Epoxy meets UL 94V-0
• Version ..R isolated and
EAS IAS = 4 A; L = 100 µH; TVJ = 25°C; non repetitive 0.8 mJ
UL registered E153432
IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive 0.4 A
Applications
(dv/dt)cr 18000 V/µs
• Rectifiers in switch mode power
TVJ -55...+175 °C supplies (SMPS)
TVJM 175 °C • Free wheeling diode in low voltage
Tstg -55...+150 °C converters
Ptot TC = 25°C 190 W
Advantages
Md Version A: mounting torque M3 0.8...1.2 Nm • High reliability circuit operation
FC Version AR: mounting force with clip 20...120 N • Low voltage peaks for reduced
VISOL * 50/60 Hz, RMS; t = 1 s 3000 V~ protection circuits
• Low noise switching
Weight typical 6 g • Low losses
* Version AR only

Symbol Conditions Characteristic Values Dimensions see Outlines.pdf

typ. max.
IR VR = VRRM; TVJ = 25°C 2 mA
VR = VRRM; TVJ = 125°C 20 mA
VF IF = 30 A; TVJ = 125°C 0.70 V
IF = 30 A; TVJ = 25°C 0.85 V
IF = 60 A; TVJ = 125°C 0.84 V
RthJC 0.8 K/W
RthCH 0.25 K/W
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
0548

IXYS reserves the right to change limits, Conditions and dimensions.

© 2005 IXYS All rights reserved 1-2

 DSSK 60-02A
DSSK 60-02AR

100 100 10000

mA
A pF
TVJ=175°C
10
IR CT
IF 150°C

1
125°C
10 1000
TVJ =
100°C
175°C 0.1
125°C
25°C 75°C
0.01
50°C

25°C TVJ= 25°C

1 0.001 100
0.0 0.2 0.4 0.6 0.8 1.0 V 1.2 0 50 100 V 150 0 50 100 V 150
VF VR VR
Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current IR Fig. 3 Typ. junction capacitance CT
drop characteristics versus reverse voltage VR versus reverse voltage VR

80 60
W
A
50
P(AV)
60
IF(AV) 40
d=
d=0.5 DC
DC
40 30 0.5
0.33
20 0.25
0.17
20 0.08
10

0 0
0 40 80 120 160 C 0 10 20 30 40 50 60 A
TC IF(AV)
Fig. 4 Average forward current IF(AV) Fig. 5 Forward power loss characteristics
versus case temperature TC

D=0.5

K/W 0.33
0.25
ZthJC 0.17

0.08 Single Pulse

0.1

DSSK 60-02A
0.01
0.001 0.01 0.1 1 s 10
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
0548

IXYS reserves the right to change limits, Conditions and dimensions.

© 2005 IXYS All rights reserved 2-2