Better Chips,Better Dreams Data Sheet
MICROPOWER, HIGH SENSITIVITY,
GH1248/1250/1253
OMNIPOLAR HALL-EFFECT SWITCH
General Description
on. If the magnetic flux density is larger than
The GH1248/1250/1253 is an ultra-sensitive operating point (BOP), the output will be turned on; if
Hall-effect omnipolar switch IC with digital latched it is less than releasing point (BRP), the output will be
output, mainly designed for battery-operation, turned off.
hand-held equipment. The GH1248/1250/1253 is available in SIP-3L (or
Special CMOS process is used for low-voltage and TO-92S), SOT23-3L packages which are optimized
low-power requirement. A chopper stabilized for most applications.
amplifier improves stability of magnetic switch points. The DFN1616-3 package is another optional type.
The circuit design provides an internally controlled
clocking mechanism to cycle power to the Hall sensor Features
and analog signal processing circuits. This serves to • On Chip Hall Effect Sensor
place the high current-consuming portions of the • Micropower Operation
circuit into a “Sleep” mode. Periodically the device is • 2.5 to 5.5V Power Supply
• Switching for Both Poles of a Magnet
“Awakened” by this internal logic and the magnetic
• Chopper Stabilized amplifier stage
flux from the Hall sensor is evaluated against the
• Superior Temperature Stability
predefined thresholds. If the flux density is above or • Digital Output Signal
below the BOP/BRP thresholds then the output • Built-in Pull-up Resistor (GH1248/GH1250)
transistor is driven to change states accordingly. • Push-Pull CMOS Output Stage(GH1253)
While in the “Sleep” cycle the output transistor is
latched in its previous state. The design has been Applications
optimized for service in applications requiring • Solid State Switch
extended operating lifetime in battery powered • Handheld Wireless Handset Awake Switch
systems. • Lid close sensor for battery-powered devices
The IC switching behaviour is omnipolar, either north • Magnet proximity sensor for reed switch
or south pole sufficient strength will turn the output replacement in low duty cycle applications
SIP-3L(TO-92S) SOT23-3L
Figure 1. Package Type of GH1248/1250/1253
Rev. 3.0
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Better Chips,Better Dreams Data Sheet
MICROPOWER, HIGH SENSITIVITY,
GH1248/1250/1253
OMNIPOLAR HALL-EFFECT SWITCH
Ordering Information
Package Temperature Range Part Number Marking ID Packing Type
SIP-3L(TO-92S) -40 to 85 ℃ GH1248EUA G248 Bulk
SOT23-3L -40 to 85 ℃ GH1248ESW G248 Tape and Reel
SIP-3L(TO-92S) -40 to 85 ℃ GH1250EUA G250 Bulk
SOT23-3L -40 to 85 ℃ GH1250ESW G250 Tape and Reel
SIP-3L(TO-92S) -40 to 85 ℃ GH1253EUA G253 Bulk
SOT23-3L -40 to 85 ℃ GH1253ESW G253 Tape and Reel
Note: The DFN1616-3 package is another optional type.
Pin Configuration (Not to Scale)
SIP-3L(TO-92S) SOT23-3L
GND
1 2 3
1 2
VDD OUTPUT
VDD GND OUTPUT
(Front View) (Top View)
Figure 2. Pin Configuration of GH1248/1250/1253
Rev. 3.0
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Better Chips,Better Dreams Data Sheet
MICROPOWER, HIGH SENSITIVITY,
GH1248/1250/1253
OMNIPOLAR HALL-EFFECT SWITCH
Pin Description
Pin Number
Pin Name Function
SIP-3L SOT23-3L DFN1616-3
1 1 1 VDD Power Supply
2 3 3 GND Ground pin
3 2 2 OUTPUT Output pin
Functinal Block Diagram
VDD
GH1248/1250 1 (1)
Sleep/Awake Timing
Bias
Control Logic
3 (2)
Hall OUTPUT
Plate
Chopper Comparator
2 (3)
A (B)
GND A for SIP-3L(TO-92S)
B for SOT-23-3L
VDD
and DFN1616-3
GH1253 1 (1)
Sleep/Awake Timing
Bias
Control Logic
3 (2)
Hall OUTPUT
Plate
Chopper Comparator
2 (3)
GND
Figure 3. Functional Block Diagram of GH1248/1250/1253
Rev. 3.0
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Better Chips,Better Dreams Data Sheet
MICROPOWER, HIGH SENSITIVITY,
GH1248/1250/1253
OMNIPOLAR HALL-EFFECT SWITCH
Absolute Maximum Ratings (T A=25°C, Note 1)
Parameter Symbol Value Unit
Supply Voltage VDD -0.3~6.0 V
Supply Current (Fault) IDD 5.0 mA
Output Voltage VOUT -0.3~6.0 V
Output Current IOUT 5.0 mA
Magnetic Flux Density B Unlimited Gauss
Power Dissipation PD SIP-3L 400
SOT23-3L 230 mW
Storage Temperature TSTG -55 to 150 °C
Junction Temperature TJ 150 °C
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe
Electro Static Discharge control procedures whenever handling semiconductor products.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage VDD 2.5 5.5 V
Operating Temperature TOP -40 85 °C
Rev. 3.0
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Better Chips,Better Dreams Data Sheet
MICROPOWER, HIGH SENSITIVITY,
GH1248/1250/1253
OMNIPOLAR HALL-EFFECT SWITCH
Electrical Characteristics
VDD =3.0V, TA =25°C, unless otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Supply Voltage VDD Operating 2.5 3.0 5.5 V
ISOP AWake(Operating) - 1.0 2.0 mA
Supply Current ISL Sleep(Standby) - 1.0 2.0 μA
ISAVG Average - 5.0 20.0 μA
Output Current IOUT 1.0 - 5.0 mA
Output Leakage Current ILEAK B<︱BRP︱ - <0.01 1.0 μA
Saturation Voltage V SAT IOUT =1.0mA - 0.05 0.25 V
Awake Time t AW AWake(Operating) 50 100 200 μs
Sleep Time tSL Sleep(Standby) 40 70 100 ms
Magnetic Characteristics
VDD =3.0V, TA =25°C, unless otherwise specified.
GH1248EUA/GH1248ESW/GH1253EUA/GH1253ESW
Parameter Symbol Conditions Min Typ Max Unit
Operating point BOP B>︱BOP︱,VOUT=low(output on) +/-16 +/-25 Gauss
Releasing Point BRP B<︱BRP︱,VOUT=high(output off) +/-5 +/-10 Gauss
Hysteresis BHYS 2 6 15 Gauss
GH1250EUA/GH1250ESW
Parameter Symbol Conditions Min Typ Max Unit
Operating point BOP B>︱BOP︱,VOUT=low(output on) +/-35 +/-50 Gauss
Releasing Point BRP B<︱BRP︱,VOUT=high(output off) +/-10 +/-15 Gauss
Hysteresis BHYS 5 20 30 Gauss
Rev. 3.0
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Better Chips,Better Dreams Data Sheet
MICROPOWER, HIGH SENSITIVITY,
GH1248/1250/1253
OMNIPOLAR HALL-EFFECT SWITCH
Magnetic Characteristics (Continued)
Output Off
High
B OPN B OPS
Output Voltage
B RPN B RPS Output ON
Low
-B 0 +B
Magnetic Flux Density (Gauss)
N-pole S-pole
Figure 4. Output Voltage vs. Magnetic Flux Density
Typical Application Circuit
2 1
10~100pF 10nF 2.5~5.5V
OUTPUT VDD
GH1248/1250/1253
GND
3
Figure 5. Typical Application of GH1248/1250/1253
Rev. 3.0
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Better Chips,Better Dreams Data Sheet
MICROPOWER, HIGH SENSITIVITY,
GH1248/1250/1253
OMNIPOLAR HALL-EFFECT SWITCH
Mechanical Dimensions
SIP-3L(TO-92S) Unit: mm(inch)
0.750(0.030)
TYP.
44°
46°
1.420(0.056)
1.620(0.064)
3.850(0.152) 1.050(0.041)
4.150(0.163) 1.350(0.053)
1.850(0.073)
2.150(0.085)
2.900(0.114)
Package Sensor Location
3.310(0.130)
1.600(0.063)
0.380(0.015)
TYP.
0.550(0.022)
14.000(0.551)
15.500(0.610)
0.360(0.014)
0.480(0.019)
1.270(0.050) 0.360(0.014)
TYP. 0.510(0.020)
Rev. 3.0
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Better Chips,Better Dreams Data Sheet
MICROPOWER, HIGH SENSITIVITY,
GH1248/1250/1253
OMNIPOLAR HALL-EFFECT SWITCH
Mechanical Dimensions (Continued)
SOT23-3L Unit: mm(inch)
2.820(0.111)
3.020(0.119) 0.100(0.004)
0.200(0.008)
1.45(0.057)
TYP
0.300(0.012)
0.600(0.024)
1.700(0.067)
1.500(0.059)
2.950(0.116)
2.650(0.104)
0.200(0.008)
0.900(0.035)
TYP
0.950(0.037) 0.300(0.012) 0 °
TYP 0.500(0.020) 8 °
1.800(0.071)
2.000(0.079)
1.450(0.057)
0.000(0.000)
MAX.
0.150(0.006)
0.900(0.035)
1.300(0.051)
Rev. 3.0
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Nov 20.2018
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