Atmel Datasheet
Atmel Datasheet
AT25080A
Description
The AT25080A/160A/320A/640A provides 8192/16384/32768/65536 bits of serial
AT25160A
electrically-erasable programmable read-only memory (EEPROM) organized as
1024/2048/4096/8192 words of 8 bits each. The device is optimized for use in many
AT25320A
industrial and commercial applications where low-power and low-voltage operation AT25640A
are essential. The AT25080A/160A/320A/640A is available in space-saving 8-lead
PDIP, 8-lead JEDEC SOIC, 8-lead MAP, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 8-
lead TSSOP and 8-Lead Ultra Leadframe Land Grid Array (ULLGA) packages.
The AT25080A/160A/320A/640A is enabled through the Chip Select pin (CS) and
Not
accessed via a three-wire interface consisting of Serial Data Input (SI), Serial Data Recommended
Output (SO), and Serial Clock (SCK). All programming cycles are completely self-
timed, and no separate erase cycle is required before write. for New Design
3347M–SEEPR–06/07
Table 0-1. Pin Configuration 8-lead PDIP 8-lead SOIC
Pin Name Function CS 1 8 VCC CS 1 8 VCC
SO 2 7 HOLD SO 2 7 HOLD
CS Chip Select WP 3 6 SCK WP 3 6 SCK
GND 4 5 SI GND 4 5 SI
SCK Serial Data Clock
SI Serial Data Input 8-lead TSSOP 8-lead Ultra Thin Mini-MAP (MLP 2x
Block write protection is enabled by programming the status register with one of four blocks of
write protection. Separate program enable and program disable instructions are provided for
additional data protection. Hardware data protection is provided via the WP pin to protect
against inadvertent write attempts to the status register. The HOLD pin may be used to suspend
any serial communication without resetting the serial sequence.
2 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
3
3347L–SEEPR–06/07
Table 1-2. DC Characteristics
Applicable over recommended operating range from: TAI = –40C to +85C, VCC = +1.8V to +5.5V (unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Units
VCC1 Supply Voltage 1.8 5.5 V
VCC2 Supply Voltage 2.7 5.5 V
VCC3 Supply Voltage 4.5 5.5 V
ICC1 Supply Current VCC = 5.0V at 20 MHz, SO = Open, Read 7.5 10.0 mA
VCC = 5.0V at 20 MHz, SO = Open, Read,
ICC2 Supply Current 4.0 10.0 mA
Write
VCC = 5.0V at 5 MHz, SO = Open,
ICC3 Supply Current 4.0 6.0 mA
Read, Write
ISB1 Standby Current VCC = 1.8V, CS = VCC < 0.1 6.0(2) µA
(2)
ISB2 Standby Current VCC = 2.7V, CS = VCC 0.3 7.0 µA
(2)
ISB3 Standby Current VCC = 5.0V, CS = VCC 2.0 10.0 µA
IIL Input Leakage VIN = 0V to VCC –3.0 3.0 µA
IOL Output Leakage VIN = 0V to VCC, TAC = 0°C to 70°C –3.0 3.0 µA
(1)
VIL Input Low-voltage –0.6 VCC x 0.3 V
(1)
VIH Input High-voltage VCC x 0.7 VCC + 0.5 V
VOL1 Output Low-voltage IOL = 3.0 mA 0.4 V
4.5V VCC 5.5V
VOH1 Output High-voltage IOH = 1.6 mA VCC - 0.8 V
VOL2 Output Low-voltage IOL = 0.15 mA 0.2 V
1.8V VCC 3.6V
VOH2 Output High-voltage IOH = 100 µA VCC - 0.2 V
Notes: 1. VIL min and VIH max are reference only and are not tested.
2. Worst case measured at 85C
4 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
4.5–5.5 20
tWH SCK High Time 2.7–5.5 40 ns
1.8–5.5 80
4.5–5.5 20
tWL SCK Low Time 2.7–5.5 40 ns
1.8–5.5 80
4.5–5.5 25
tCS CS High Time 2.7–5.5 50 ns
1.8–5.5 100
4.5–5.5 25
tCSS CS Setup Time 2.7–5.5 50 ns
1.8–5.5 100
4.5–5.5 25
tCSH CS Hold Time 2.7–5.5 50 ns
1.8–5.5 100
4.5–5.5 5
tSU Data In Setup Time 2.7–5.5 10 ns
1.8–5.5 20
4.5–5.5 5
tH Data In Hold Time 2.7–5.5 10 ns
1.8–5.5 20
4.5–5.5 5
tHD HOLD Setup Time 2.7–5.5 10
1.8–5.5 20
4.5–5.5 5
tCD HOLD Hold Time 2.7–5.5 10 ns
1.8–5.5 20
4.5–5.5 0 20
tV Output Valid 2.7–5.5 0 40 ns
1.8–5.5 0 80
4.5–5.5 0
tHO Output Hold Time 2.7–5.5 0 ns
1.8–5.5 0
5
3347L–SEEPR–06/07
Table 1-3. AC Characteristics (Continued)
Applicable over recommended operating range from TAI = –40C to +85C, VCC = As Specified,
CL = 1 TTL Gate and 30 pF (unless otherwise noted)
Symbol Parameter Voltage Min Max Units
4.5–5.5 0 25
tLZ HOLD to Output Low Z 2.7–5.5 0 50 ns
1.8–5.5 0 100
4.5–5.5 40
tHZ HOLD to Output High Z 2.7–5.5 80 ns
1.8–5.5 200
4.5–5.5 40
tDIS Output Disable Time 2.7–5.5 80 ns
1.8–5.5 200
4.5–5.5 5
tWC Write Cycle Time 2.7–5.5 5 ms
1.8–5.5 5
Endurance(1) 5.0V, 25°C, Page Mode 1M Write Cycles
Note: 1. This parameter is characterized and is not 100% tested.
6 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
7
3347L–SEEPR–06/07
Figure 2-1. SPI Serial Interface
AT25080A/160A/320A/640A
8 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
3. Functional Description
The AT25080A/160A/320A/640A is designed to interface directly with the synchronous serial
peripheral interface (SPI) of the 6805 and 68HC11 series of microcontrollers.
The AT25080A/160A/320A/640A utilizes an 8-bit instruction register. The list of instructions and
their operation codes are contained in Table 3-1. All instructions, addresses, and data are trans-
ferred with the MSB first and start with a high-to-low CS transition.
WRITE ENABLE (WREN): The device will power up in the write disable state when VCC is
applied. All programming instructions must therefore be preceded by a Write Enable instruction.
WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write Disable
instruction disables all programming modes. The WRDI instruction is independent of the status
of the WP pin.
READ STATUS REGISTER (RDSR): The Read Status Register instruction provides access to
the status register. The READY/BUSY and Write Enable status of the device can be determined
by the RDSR instruction. Similarly, the Block Write Protection Bits indicate the extent of protec-
tion employed. These bits are set by using the WRSR instruction.
9
3347L–SEEPR–06/07
Table 3-3. Read Status Register Bit Definition
Bit Definition
Bit 0 = “0” (RDY) indicates the device is READY. Bit 0 = “1” indicates the write cycle
Bit 0 (RDY)
is in progress.
Bit 1= “0” indicates the device is not WRITE ENABLED. Bit 1 = “1” indicates the
Bit 1 (WEN)
device is write enabled.
Bit 2 (BP0) See Table 3-4 on page 10.
Bit 3 (BP1) See Table 3-4 on page 10.
Bits 4–6 are “0”s when device is not in an internal write cycle.
Bit 7 (WPEN) See Table 3-5 on page 11.
Bits 0–7 are “1”s during an internal write cycle.
WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select one of
four levels of protection. The AT25080A/160A/320A/640A is divided into four array segments.
One-quarter, one-half, or all of the memory segments can be protected. Any of the data within
any selected segment will therefore be read only. The block write protection levels and corre-
sponding status register control bits are shown in Table 3-4.
The three bits BP0, BP1, and WPEN are nonvolatile cells that have the same properties and
functions as the regular memory cells (e.g., WREN, tWC, RDSR).
The WRSR instruction also allows the user to enable or disable the write protect (WP) pin
through the use of the Write Protect Enable (WPEN) bit. Hardware write protection is enabled
when the WP pin is low and the WPEN bit is “1”. Hardware write protection is disabled when
either the WP pin is high or the WPEN bit is “0”. When the device is hardware write protected,
writes to the status register, including the block protect bits and the WPEN bit, and the block-pro-
tected sections in the memory array are disabled. Writes are only allowed to sections of the
memory that are not block-protected.
NOTE: When the WPEN bit is hardware write protected, it cannot be changed back to “0” as
long as the WP pin is held low.
10 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
READ SEQUENCE (READ): Reading the AT25080A/160A/320A/640A via the Serial Output
(SO) pin requires the following sequence. After the CS line is pulled low to select a device, the
read op-code is transmitted via the SI line followed by the byte address to be read (A15–A0, see
Table 3-6). Upon completion, any data on the SI line will be ignored. The data (D7–D0) at the
specified address is then shifted out onto the SO line. If only one byte is to be read, the CS line
should be driven high after the data comes out. The read sequence can be continued since the
byte address is automatically incremented and data will continue to be shifted out. When the
highest address is reached, the address counter will roll over to the lowest address allowing the
entire memory to be read in one continuous read cycle.
WRITE SEQUENCE (WRITE): In order to program the AT25080A/160A/320A/640A, two sepa-
rate instructions must be executed. First, the device must be write enabled via the WREN
instruction. Then a write (WRITE) instruction may be executed. Also, the address of the memory
location(s) to be programmed must be outside the protected address field location selected by
the block write protection level. During an internal write cycle, all commands will be ignored
except the RDSR instruction.
A write instruction requires the following sequence. After the CS line is pulled low to select the
device, the WRITE op-code is transmitted via the SI line followed by the byte address (A15–A0)
and the data (D7–D0) to be programmed (see Table 3-6). Programming will start after the CS pin
is brought high. The low-to-high transition of the CS pin must occur during the SCK low-time
immediately after clocking in the D0 (LSB) data bit.
The READY/BUSY status of the device can be determined by initiating a read status register
(RDSR) instruction. If Bit 0 = “1”, the write cycle is still in progress. If Bit 0 = “0”, the write cycle
has ended. Only the RDSR instruction is enabled during the write programming cycle.
The AT25080A/160A/320A/640A is capable of a 32-byte page write operation. After each byte of
data is received, the five low-order address bits are internally incremented by one; the high-
order bits of the address will remain constant. If more than 32 bytes of data are transmitted, the
address counter will roll over and the previously written data will be overwritten. The
AT25080A/160A/320A/640A is automatically returned to the write disable state at the comple-
tion of a write cycle.
NOTE: If the device is not write-enabled (WREN), the device will ignore the write instruction and
will return to the standby state, when CS is brought high. A new CS falling edge is required to
reinitiate the serial communication.
11
3347L–SEEPR–06/07
Table 3-6. Address Key
Address AT25080A AT25160A AT25320A AT25640A
AN A9–A0 A10–A0 A11–A0 A12–A0
Don’t Care Bits A15–A10 A15–A11 A15–A12 A15–A13
4. Timing Diagrams
Figure 4-1. Synchronous Data Timing (for Mode 0)
t CS
VIH
CS
VIL
t CSS t CSH
VIH
SCK t WH t WL
VIL
t SU tH
VIH
SI VALID IN
VIL
tV t HO t DIS
VOH
SO HI-Z HI-Z
VOL
12 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
CS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
SI INSTRUCTION
DATA OUT
HIGH IMPEDANCE
SO 7 6 5 4 3 2 1 0
MSB
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
DATA IN
SI INSTRUCTION 7 6 5 4 3 2 1 0
HIGH IMPEDANCE
SO
13
3347L–SEEPR–06/07
Figure 4-6. READ Timing
CS
0 1 2 3 4 5 6 7 8 9 10 11 20 21 22 23 24 25 26 27 28 29 30 31
SCK
BYTE ADDRESS
SI INSTRUCTION 15 14 13 ... 3 2 1 0
DATA OUT
HIGH IMPEDANCE
SO 7 6 5 4 3 2 1 0
MSB
0 1 2 3 4 5 6 7 8 9 10 11 20 21 22 23 24 25 26 27 28 29 30 31
SCK
SO HIGH IMPEDANCE
SCK
t HD
t HD
HOLD
t HZ
SO
t LZ
14 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y1 8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP
8Y6 2x3mm)
Options
2.7 Low Voltage (2.7 to 5.5V)
1.8 Low Voltage (1.8 to 5.5V)
15
3347L–SEEPR–06/07
6. AT25160A Ordering Information(1)
Ordering Code Package Operation Range
AT25160A-10PU-2.7(2) 8P3
AT25160A-10PU-1.8(2) 8P3
AT25160AN-10SU-2.7(2) 8S1
AT25160AN-10SU-1.8(2) 8S1 Lead-free/Halogen-free/
AT25160A-10TU-2.7(2) 8A2 Industrial Temperature
AT25160A-10TU-1.8(2) 8A2 (40 to 85C)
AT25160AY1-10YU-1.8(2) (Not recommended for new design) 8Y1
AT25160AY6-10YH-1.8(3) 8Y6
AT25160AD3-10DH-1.8 8D3
Industrial Temperature
AT25160A-W1.8-11(4) Die Sale
(40 to 85C)
Notes: 1. For 2.7V devices used in the 4.5 to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
2. “U” designates Green package + RoHS compliant.
3. “H” designates Green package + RoHS compliant, with NiPdAu Lead Finish.
4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial EEPROM Marketing.
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y1 8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP
8Y6 2x3mm)
8D3 8-lead, 1.80 mm x 2.20 mm Body, Ultra Lead Frame Land Grid Array (ULLGA) D3
Options
2.7 Low Voltage (2.7 to 5.5V)
1.8 Low Voltage (1.8 to 5.5V)
16 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y1 8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP
8Y6 2x3mm)
Options
2.7 Low Voltage (2.7 to 5.5V)
1.8 Low Voltage (1.8 to 5.5V)
17
3347L–SEEPR–06/07
8. AT25640A Ordering Information(1)
Ordering Code Package Operation Range
AT25640A-10PU-2.7(2) 8P3
AT25640A-10PU-1.8(2) 8P3
AT25640AN-10SU-2.7(2) 8S1
Lead-free/Halogen-free/
AT25640AN-10SU-1.8(2) 8S1
Industrial Temperature
AT25640A-10TU-2.7(2) 8A2
(40 to 85C)
AT25640A-10TU-1.8(2) 8A2
AT25640AY1-10YU-1.8(2)(Not recommended for new design) 8Y1
AT25640AY6-10YH-1.8(3) 8Y6
Industrial Temperature
AT25640A-W1.8-11(3) Die Sale
(40 to 85C)
Notes: 1. For 2.7V devices used in the 4.5 to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
2. “U” designates Green package + RoHS compliant.
3. “H” designates Green package + RoHS compliant, with NiPdAu Lead Finish.
4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial EEPROM Marketing.
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y1 8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8Y6 8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP 2x3 mm)
Options
2.7 Low Voltage (2.7 to 5.5V)
1.8 Low Voltage (1.8 to 5.5V)
18 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
9. Packaging Information
8P3 – PDIP
1
E
E1
Top View c
eA
End View
COMMON DIMENSIONS
D (Unit of Measure = inches)
e
D1 SYMBOL MIN NOM MAX NOTE
A2 A
A – – 0.210 2
A2 0.115 0.130 0.195
b 0.014 0.018 0.022 5
b2 0.045 0.060 0.070 6
b3 0.030 0.039 0.045 6
c 0.008 0.010 0.014
D 0.355 0.365 0.400 3
b2 L D1 0.005 – – 3
b3 E 0.300 0.310 0.325 4
4 PLCS b E1 0.240 0.250 0.280 3
e 0.100 BSC
Side View
eA 0.300 BSC 4
L 0.115 0.130 0.150 2
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
TITLE DRAWING NO. REV.
2325 Orchard Parkway 8P3, 8-lead, 0.300" Wide Body, Plastic Dual
8P3 B
R San Jose, CA 95131 In-line Package (PDIP)
19
3347L–SEEPR–06/07
8S1 – JEDEC SOIC
E E1
N L
∅
Top View
End View
e B
COMMON DIMENSIONS
A
(Unit of Measure = mm)
Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
10/7/03
TITLE DRAWING NO. REV.
1150 E. Cheyenne Mtn. Blvd. 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Colorado Springs, CO 80906 8S1 B
R
Small Outline (JEDEC SOIC)
20 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
8A2 – TSSOP
3 2 1
Pin 1 indicator
this corner
E1 E
L1
N
L
Top View End View
COMMON DIMENSIONS
(Unit of Measure = mm)
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H. 5/30/02
TITLE DRAWING NO. REV.
2325 Orchard Parkway 8A2, 8-lead, 4.4 mm Body, Plastic
8A2 B
R San Jose, CA 95131 Thin Shrink Small Outline Package (TSSOP)
21
3347L–SEEPR–06/07
8Y1 – MAP
1 2 3 4
E1
D D1
8 7 6 5
A1 b e
E
2/28/03
TITLE DRAWING NO. REV.
2325 Orchard Parkway 8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package
San Jose, CA 95131 8Y1 C
R
(MAP) Y1
22 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
A D2 b
(8X)
Pin 1
Index
Area
E2
E
Pin 1 ID
L (8X)
D
e (6X)
A2 A1
1.50 REF.
A3
COMMON DIMENSIONS
(Unit of Measure = mm)
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions,
tolerances, datums, etc.
2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the
terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area.
8/26/05
TITLE DRAWING NO. REV.
2325 Orchard Parkway
8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map, 8Y6 C
R San Jose, CA 95131 Dual No Lead Package (DFN) ,(MLP 2x3)
23
3347L–SEEPR–06/07
8D3 - ULLGA
D e1
8 7 6 5 b
L
PIN #1 ID E
0.10
PIN #1 ID
0.15
1 2 3 4 A1
b
e
A
COMMON DIMENSIONS
(Unit of Measure = mm)
11/15/05
TITLE DRAWING NO. REV.
1150 E. Cheyenne Mtn. Blvd. 8D3, 8-lead (1.80 x 2.20 mm Body) Ultra Leadframe
Colorado Springs, CO 80906 8D3 0
R
Land Grid Array (ULLGA) D3
24 AT25080A/160A/320A/640A
3347L–SEEPR–06/07
AT25080A/160A/320A/640A
25
3347L–SEEPR–06/07
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3347L–SEEPR–06/07
Mouser Electronics
Authorized Distributor
Microchip:
AT25640A-10PI-2.7 AT25640A-10PU-2.7 AT25080A-10TU-2.7 SL383 AT25160A-10TU-1.8 SL383 AT25160AN-
10SU-2.7 SL383 AT25160AD3-10DH-1.8 AT25080A-10TU-1.8 SL383 AT25160A-10TU-2.7 SL383 AT25160AN-
10SU-1.8 SL383 AT25080AN-10SU-2.7 SL383 AT25080AN-10SU-1.8 SL383 AT25080A-10PU-1.8 AT25080A-10PU-
2.7 AT25080A-10TU-1.8 AT25080A-10TU-2.7 AT25080AN-10SU-1.8 AT25080AN-10SU-2.7 AT25080A-W1.8-11
AT25080AY1-10YU-1.8 AT25080AY6-10YH-1.8 AT25160A-10PU-1.8 AT25160A-10PU-2.7 AT25160A-10TU-1.8
AT25160A-10TU-2.7 AT25160AN-10SU-1.8 AT25160AN-10SU-2.7 AT25160A-W1.8-11 AT25160AY1-10YU-1.8
AT25160AY6-10YH-1.8 AT25320A-10PU-1.8 AT25320A-10PU-2.7 AT25320A-10TU-1.8 AT25320A-10TU-2.7
AT25320AN-10SU-1.8 AT25320AN-10SU-2.7 AT25320AY6-10YH-1.8 AT25640A-10PU-1.8 AT25640A-10TU-1.8
AT25640A-10TU-2.7 AT25640AN-10SU-1.8 AT25640AN-10SU-2.7 AT25640AY1-10YU-1.8 AT25640AY6-10YH-1.8