STD12NE06
N - CHANNEL 60V - 0.08Ω - 12A - IPAK/DPAK
SINGLE FEATURE SIZE POWER MOSFET
TYPE V DSS R DS(on) ID
STD12NE06 60 V < 0.10 Ω 12 A
■ TYPICAL RDS(on) = 0.08 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ AVALANCHE RUGGED TECHNOLOGY
■ 100 % AVALANCHE TESTED
■ APPLICATION ORIENTED
3
CHARACTERIZATION 2 3
■ ADD SUFFIX ”T4” FOR ORDERING IN TAPE 1 1
& REEL
DESCRIPTION IPAK DPAK
This Power MOSFET is the latest development of TO-251 TO-252
STMicroelectronics unique ”Single Feature (Suffix ”-1”) (Suffix ”T4”)
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES,etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Value Unit
V DS Drain-source Voltage (VGS = 0) 60 V
V DGR Drain- gate Voltage (R GS = 20 kΩ) 60 V
VGS Gate-source Voltage ± 20 V
o
ID Drain Current (continuous) at Tc = 25 C 12 A
o
ID Drain Current (continuous) at Tc = 100 C 8 A
I DM (•) Drain Current (pulsed) 48 A
P tot Total Dissipation at T c = 25 oC 35 W
Derating F actor 0.23 W /o C
dv/dt( 1 ) Peak Diode Recovery voltage slope 6 V/ns
o
T st g Storage T emperature -65 to 175 C
o
Tj Max. Operating Junction Temperature 175 C
(•) Pulse width limited by safe operating area ( 1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
March 1999 1/10
STD12NE06
THERMAL DATA
o
R thj -case Thermal Resistance Junction-case Max 4.3 C/W
o
R thj -amb Thermal Resistance Junction-ambient Max 100 C/W
o
R thc-sink Thermal Resistance Case-sink T yp 1.5 C/W
o
Tl Maximum Lead Temperature F or Soldering Purpose 275 C
AVALANCHE CHARACTERISTICS
Symbo l Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 12 A
(pulse width limited by Tj max)
E AS Single Pulse Avalanche Energy 45 mJ
(starting Tj = 25 o C, ID = IAR , V DD = 25 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
V (BR)DSS Drain-source I D = 250 µA V GS = 0 60 V
Breakdown Voltage
I DSS Zero Gate Voltage V DS = Max Rating 1 µA
Drain Current (V GS = 0) V DS = Max Rating T c = 100 oC 10 µA
IGSS Gate-body Leakage V GS = ± 20 V ± 100 nA
Current (VDS = 0)
ON (∗)
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA 2 3 4 V
R DS(on) Static Drain-source On V GS = 10V ID = 6 A 0.08 0.10 Ω
Resistance
I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x 12 A
V GS = 10 V
DYNAMIC
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
g f s (∗) Forward V DS > ID(o n) x R DS(on )ma x I D =6 A 6 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz V GS = 0 760 1000 pF
C os s Output Capacitance 100 140 pF
C rss Reverse Transfer 30 45 pF
Capacitance
2/10
STD12NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
t d(on) Turn-on Time V DD = 30 V ID = 6 A 10 15 ns
tr Rise Time R G = 4.7 Ω V GS = 10 V 35 50 ns
(see test circuit, figure 3)
Qg Total G ate Charge V DD = 40 V I D = 12 A VGS = 10 V 20 30 nC
Q gs Gate-Source Charge 5 nC
Q gd Gate-Drain Charge 7 nC
SWITCHING OFF
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
tr (Voff) Off-voltage Rise T ime V DD = 48 V I D = 12 A 7 10 ns
tf Fall T ime R G = 4.7 Ω V GS = 10 V 18 25 ns
tc Cross-over Time (see test circuit, figure 5) 30 45 ns
SOURCE DRAIN DIODE
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
ISD Source-drain Current 12 A
I SDM (•) Source-drain Current 48 A
(pulsed)
V SD (∗) Forward On Voltage I SD = 12 A V GS = 0 1.5 V
t rr Reverse Recovery I SD = 12 A di/dt = 100 A/µs 70 ns
o
Time V DD = 30 V T j = 150 C
Q rr Reverse Recovery (see test circuit, figure 5) 0.21 µC
Charge
I RRM Reverse Recovery 6 A
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
3/10
STD12NE06
Derating Curve Output Characteristics
Transfer Characteristics Transconductance
Static Drain-source On Resistance Gate Charge vs Gate-source Voltage
4/10
STD12NE06
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
Turn-off Drain-source Voltage Slope Cross-over Time
5/10
STD12NE06
Switching Safe Operating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
6/10
STD12NE06
Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And DIode Recovery Times
7/10
STD12NE06
TO-251 (IPAK) MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
C
A
A3
C2
A1
L2 D L
B3
B6
B5
B
3
=
=
B2
G
E
2
=
=
1
L1
0068771-E
8/10
STD12NE06
TO-252 (DPAK) MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
H
A
C2
A1
DETAIL ”A”
C
A2
L2 D
DETAIL ”A”
B
3
=
=
B2
G
E
2
=
=
1
L4
0068772-B
9/10
