Ordering number : ENA2232

NDFP03N150C
N-Channel Power MOSFET
1500V, 2.5A, 10.5Ω, TO-220F-3FS http://onsemi.com

Features
• On-resistance RDS(on)=8Ω(typ.)
• Input Capacitance Ciss=650pF(typ.)
• 10V drive

Specifications TO-220F-3FS
Absolute Maximum Ratings at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage VDSS 1500 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID 2.5 A
Drain Current (DC) Limited by Package IDL 2 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 5 A
2 W
Allowable Power Dissipation PD
Tc=25°C 32 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg - 55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 20 mJ
Avalanche Current *2 IAV 2 A
1
* VDD=50V, L=10mH, IAV=2A (Fig.1)
*2 L≤10mH, Single Pulse

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics at Ta = 25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 1500 V
Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0V 1 mA
Gate to Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2 4 V
Forward Transfer Admittance | yfs | VDS=20V, ID=1A 1.9 S
Static Drain to Source On-State Resistance RDS(on) ID=1A, VGS=10V 8 10.5 Ω
Input Capacitance Ciss 650 pF
Output Capacitance Coss VDS=30V, f=1MHz 70 pF
Reverse Transfer Capacitance Crss 20 pF
Turn-ON Delay Time td(on) 15 ns
Rise Time tr 20 ns
See Fig.2
Turn-OFF Delay Time td(off) 148 ns
Fall Time tf 44 ns

Continued on next Page.

ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.

Semiconductor Components Industries, LLC, 2013

November, 2013 N1313 TKIM TC-00003050 No. A2232-1/5
 NDFP03N150C
Continued from preceding Page.
Total Gate Charge Qg 34 nC
Gate to Source Charge Qgs VDS=200V, VGS=10V, ID=2A 4.7 nC
Gate to Drain “Miller” Charge Qgd 15 nC
Diode Forward Voltage VSD IS=2A, VGS=0V 0.78 1.5 V
Reverse Recovery Time trr See Fig.3 300 ns
Reverse Recovery Charge Qrr IS=2A, VGS=0V, di/dt=100A/μs 1900 nC
Forward Transfer Admittance, | yfs | -- S

No.A2232-2/5
NDFP03N150C

Operation in
this area is
limited by RDS(on).

No.A2232-3/5
 NDFP03N150C
Package Dimensions
NDFP03N150CG

TO-220F-3FS
CASE 221AM
ISSUE O
Unit : mm

1: Gate
2: Drain
3: Source

Ordering & Package Information Marking Electrical Connection

Device Package Shipping note 2
TO-220F-3FS 50
NDFP03N150CG Pb-Free
SC-67, pcs. / tube

03N150
1
C LOT No.

No.A2232-4/5
 NDFP03N150C
Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit

Fig.3 Reverse Recovery Time Test Circuit

Note on usage : Since the NDFP03N150C is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

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PS No.A2232-5/5