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Features: 2.5A, 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente

This document provides specifications for the 2SC1162 NPN plastic encapsulated transistor. The transistor is rated for a maximum collector current of 2.5A and collector-emitter voltage of 35V. It has a DC current gain range of 60-320 and a transition frequency of 180MHz. The document includes details on absolute maximum ratings, electrical characteristics, and a characteristic curve graph.

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115 views2 pages

Features: 2.5A, 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente

This document provides specifications for the 2SC1162 NPN plastic encapsulated transistor. The transistor is rated for a maximum collector current of 2.5A and collector-emitter voltage of 35V. It has a DC current gain range of 60-320 and a transition frequency of 180MHz. The document includes details on absolute maximum ratings, electrical characteristics, and a characteristic curve graph.

Uploaded by

danipol sicorsky
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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2SC1162

2.5A , 35V
Elektronische Bauelemente NPN Plastic Encapsulated Transistor

RoHS Compliant Product


A suffix of “-C” specifies halogen & lead-free

FEATURES TO-126
 Low frequency power amplifier

Emitter
Collector
Base
CLASSIFICATION OF hFE (1)
Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D
A
E B
Range 60~120 100~200 160~320
F
C

N
L H
M
K D

Collector G


Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 7.40 7.80 H 1.10 1.50
 B 2.50 2.90 J 0.45 0.60
Base C 10.60 11.00 K 0.66 0.86
D 15.30 15.70 L 2.10 2.30
E 3.70 3.90 M 1.17 1.37
 F 3.90 4.10 N 3.00 3.20
Emitter G 2.29 TYP.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)


Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 35 V
Collector to Emitter Voltage VCEO 35 V
Emitter to Base Voltage VEBO 5 V
Collector Current - Continuous IC 2.5 A
Collector Power Dissipation PC 750 mW
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)


Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V(BR)CBO 35 - - V IC=1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 35 - - V IC=10mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=1mA, IC=0
Collector Cut – Off Current ICBO - - 20 μA VCB=35V, IE=0
Emitter Cut – Off Current IEBO - - 20 μA VEB=5V, IC=0
hFE (1) 60 - 320 VCE=2V, IC=0.5A
DC Current Gain
hFE (2) 20 - - VCE=2V, IC=1.5A*
Collector to Emitter Saturation Voltage VCE(sat) - - 1 V IC=2A, IB=200mA
Transition Frequency fT - 180 - MHz VCE=2V, IC=200mA
Collector Output Capacitance VBE - - 1.5 V VCE=2V, IC=1.5A
*Pulse test

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

07-Mar-2011 Rev. A Page 1 of 2


2SC1162
2.5A , 35V
Elektronische Bauelemente NPN Plastic Encapsulated Transistor

CHARACTERISTIC CURVE

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

07-Mar-2011 Rev. A Page 2 of 2

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