Philips Semiconductors Product specification
Thyristors BT150 series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT
thyristors in a plastic envelope,
intended for use in general purpose BT150- 500R 600R 800R
switching and phase control VDRM, Repetitive peak off-state 500 600 800 V
applications. These devices are VRRM voltages
intended to be interfaced directly to IT(AV) Average on-state current 2.5 2.5 2.5 A
microcontrollers, logic integrated IT(RMS) RMS on-state current 4 4 4 A
circuits and other low power gate ITSM Non-repetitive peak on-state 35 35 35 A
trigger circuits. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
tab
1 cathode a k
2 anode
3 gate
tab anode 1 23 g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -600R -800R
VDRM, VRRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(AV) Average on-state current half sine wave; Tmb ≤ 113 ˚C - 2.5 A
IT(RMS) RMS on-state current all conduction angles - 4 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 35 A
t = 8.3 ms - 38 A
I2t I2t for fusing t = 10 ms - 6.1 A2s
dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/µs
on-state current after dIG/dt = 50 mA/µs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 1252 ˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 1997 1 Rev 1.300
Philips Semiconductors Product specification
Thyristors BT150 series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance - - 2.5 K/W
junction to mounting base
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A - 15 200 µA
IL Latching current VD = 12 V; IGT = 0.1 A - 0.17 10 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 0.10 6 mA
VT On-state voltage IT = 5 A - 1.23 1.8 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/µs
off-state voltage exponential waveform; RGK = 100 Ω
tgt Gate controlled turn-on ITM = 10 A; VD = VDRM(max); IG = 5 mA; - 2 - µs
time dIG/dt = 0.2 A/µs
tq Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 8 A; - 100 - µs
turn-off time VR = 10 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
October 1997 2 Rev 1.300
Philips Semiconductors Product specification
Thyristors BT150 series
logic level
Ptot / W BT148 Tmb(max) / C ITSM / A
6 110
conduction form
40
angle factor
degrees a
5 30 4
112.5 IT I TSM
60 2.8 1.9 a = 1.57
90 2.2 2.2 30 T time
4 120 1.9 115 Tj initial = 25 C max
180 1.57 2.8
3 117.5
4 20
2 120
10
1 122.5
0 125 0
0 0.5 1 1.5 2 2.5 3 1 10 100 1000
IF(AV) / A Number of half cycles at 50Hz
Fig.1. Maximum on-state dissipation, Ptot, versus Fig.4. Maximum permissible non-repetitive peak
average on-state current, IT(AV), where on-state current ITSM, versus number of cycles, for
a = form factor = IT(RMS)/ IT(AV). sinusoidal currents, f = 50 Hz.
BT148 IT(RMS) / A BT150
1000 ITSM / A 12
10
8
dIT /dt limit
100 6
IT ITSM 4
T time 2
Tj initial = 25 C max
10 0
10us 100us 1ms 10ms 0.01 0.1 1 10
T/s surge duration / s
Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 10ms. currents, f = 50 Hz; Tmb ≤ 113˚C.
IT(RMS) / A BT148 VGT(Tj)
5 VGT(25 C) BT151
1.6
113 C
4 1.4
1.2
3
1
2
0.8
1
0.6
0 0.4
-50 0 50 100 150 -50 0 50 100 150
Tmb / C Tj / C
Fig.3. Maximum permissible rms current IT(RMS) , Fig.6. Normalised gate trigger voltage
versus mounting base temperature Tmb. VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
October 1997 3 Rev 1.300
Philips Semiconductors Product specification
Thyristors BT150 series
logic level
IGT(Tj) IT / A BT148
IGT(25 C) BT148 12
3 Tj = 125 C
Tj = 25 C
10
2.5 Vo = 1.26 V typ max
Rs = 0.099 ohms
8
2
6
1.5
4
1
0.5 2
0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V
Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj) Zth j-mb (K/W) BT148
IL(25 C) 10
BT145
3
2.5
1
2
1.5
0.1 P tp
D
1
0.5 t
0.01
0 10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 150
Tj / C tp / s
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.
IH(Tj) dVD/dt (V/us)
1000
IH(25 C) BT145
3
2.5
RGK = 100 ohms
100
2
1.5
1 10
0.5
0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,
versus junction temperature Tj. dVD/dt versus junction temperature Tj.
October 1997 4 Rev 1.300
Philips Semiconductors Product specification
Thyristors BT150 series
logic level
MECHANICAL DATA
Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7
2,8 5,9
min
15,8
max
3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,54 2,54 2,4
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997 5 Rev 1.300
Philips Semiconductors Product specification
Thyristors BT150 series
logic level
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997 6 Rev 1.300
