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Datasheet C2233

This document provides product specifications for the 2SC2233 silicon NPN power transistor from SavantIC Semiconductor. It is packaged in a TO-220C case and is designed for applications like TV horizontal deflection output. Key specifications include a collector current capability of 4A maximum, collector power dissipation of 1.5W at 25°C ambient temperature, and electrical characteristics like a saturation voltage of 1.0V or less at 4A collector current. Dimensional outlines of the TO-220C package are also provided.

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745 views5 pages

Datasheet C2233

This document provides product specifications for the 2SC2233 silicon NPN power transistor from SavantIC Semiconductor. It is packaged in a TO-220C case and is designed for applications like TV horizontal deflection output. Key specifications include a collector current capability of 4A maximum, collector power dissipation of 1.5W at 25°C ambient temperature, and electrical characteristics like a saturation voltage of 1.0V or less at 4A collector current. Dimensional outlines of the TO-220C package are also provided.

Uploaded by

Deycor Avila Correa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2233

DESCRIPTION
·With TO-220C package
·Large collector current capability
·Large collector power dissipation

APPLICATIONS
·For TV horizontal deflection output
applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base

3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 200 V

VCEO Collector-emitter voltage Open base 60 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 4 A

ICM Collector current-peak 10 A

IB Base current 1 A

Ta=25 1.5
PC Collector dissipation W
TC=25 40

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2233

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 60 V

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V

VBEsat Base-emitter saturation voltage IC=4A; IB=0.4A 1.5 V

ICBO Collector cut-off current VCB=170V ;IE=0 10 µA

IEBO Emitter cut-off current VEB=5V; IC=0 10 µA

hFE-1 DC current gain IC=1A ; VCE=5V 30 150

hFE-2 DC current gain IC=4A ; VCE=5V 20

fT Transition frequency IC=0.5A ; VCE=5V 8 MHz

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2233

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2233

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2233

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