HY1908D/U/S

N-Channel Enhancement Mode MOSFET

Features Pin Description

• 80V/90A,
RDS(ON)=7.8 mΩ (typ.) @ VGS=10V
• Avalanche Rated
• Reliable and Rugged
S S
• Lead Free and Green Devices Available G
D
G
D

(RoHS Compliant) S
D
G

TO-252-2L TO-251-3L TO-251-3L

Applications
D

• Power Management for Inverter Systems.

G N-Channel MOSFET

Ordering and Marking Information

Package Code
D U S D : TO-252-2L U : TO-251-3L
S : TO-251-3L
HY1908 HY1908 HY1908
ÿ
YYXXXJWW ÿ
G YYXXXJWW ÿ
G YYXXXJWW G Date Code Assembly Material
YYXXX WW G : Lead Free Device

Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

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150709
HY1908D/U/S

Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 80
V
VGSS Gate-Source Voltage ±25
TJ Maximum Junction Temperature 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Diode Continuous Forward Current TC=25°C 90 A
Mounted on Large Heat Sink
IDM Pulsed Drain Current * TC=25°C 315** A
TC=25°C 90
ID Continuous Drain Current A
TC=100°C 59
TC=25°C 64
PD Maximum Power Dissipation W
TC=100°C 32
RθJC Thermal Resistance-Junction to Case 2.35
°C/W
RθJA Thermal Resistance-Junction to Ambient 110
Avalanche Ratings
EAS Avalanche Energy, Single Pulsed L=0.5mH 214*** mJ
Note： * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=64V

Electrical Characteristics (TC = 25°C Unless Otherwise Noted)

HY1908
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 80 - - V
VDS=80V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 10
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2 3 4 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA
RDS(ON)* Drain-Source On-state Resistance VGS=10V, IDS=45A - 7.8 9.0 mΩ
Diode Characteristics
VSD * Diode Forward Voltage ISD=45A, VGS=0V - 0.8 1.2 V
trr Reverse Recovery Time - 30 - ns
ISD=45A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge - 25 - nC

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HY1908D/U/S

Electrical Characteristics (Cont.) (TC = 25°C Unless Otherwise Noted)

HY1908
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.2 - Ω
Ciss Input Capacitance - 3864 -
VGS=0V,
Coss Output Capacitance VDS=25V, - 365 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 239 -
td(ON) Turn-on Delay Time - 26 -
Tr Turn-on Rise Time VDD=40V, R G=6 Ω, - 42 -
IDS=45A, VGS=10V, ns
td(OFF) Turn-off Delay Time - 64 -
Tf Turn-off Fall Time - 20 -
Gate Charge Characteristics
Qg Total Gate Charge - 84 -
VDS=64V, VGS=10V,
Qgs Gate-Source Charge - 16 - nC
IDS=45A
Qgd Gate-Drain Charge - 26 -
Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%.

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HY1908D/U/S

Typical Operating Characteristics

Power Dissipation Drain Current

105 90
limited by package

ID - Drain Current (A)

80
90
Ptot - Power (W)

70
75
60

60 50

45 40

30
30
20
15
10
o
TC=25 C o
TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200

Tc - Case Temperature (°C) Tc - Case Temperature (°C)

Safe Operation Area

500
it
im
)L
ID - Drain Current (A)

100
on
s(
Rd

100us

1ms
10

10ms

1
DC

O
TC=25 C
0.1
0.1 1 10 100 500

VDS - Drain - Source Voltage (V)

Thermal Transient Impedance

10
Thermal impedance (Zthjc)

Duty = 0.5
1
0.2

0.1

0.1 0.05

0.02

0.01
0.01
Single
Mounted on minimum pad
o
RθJA : 110 C/W

0.001
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (sec)

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HY1908D/U/S

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

140 11

120 10
VGS=6,7,8,9,10V

RDS(ON) - On - Resistance (mΩ)

100 5V 9
ID - Drain Current (A)

VGS=10V
8
80

7
60
4V
6
40
5

20 3V 4

0 3
0 1 2 3 4 5 0 20 40 60 80 100

VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

40 1.6
IDS=45A IDS=250µA
35 1.4
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)

30
1.2

25
1.0
20
0.8
15

0.6
10

5 0.4

0 0.2
3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 175

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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HY1908D/U/S

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.5 100
VGS = 10V
IDS = 45A

2.0
Normalized On Resistance

IS - Source Current (A)

Tj=175 C
10
1.5

o
Tj=25 C
1.0
1

0.5

o
RON@Tj=25 C: 7.8mΩ
0.0 0.1
-50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

5400 10
Frequency=1MHz VDS= 64V
4800 9
IDS= 45A
Ciss
VGS - Gate-source Voltage (V)

8
4200
7
C - Capacitance (pF)

3600
6
3000
5
2400
4
1800
3
1200 2

600 Coss 1
Crss
0 0
0 5 10 15 20 25 30 35 40 0 20 40 60 80 100

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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HY1908D/U/S

Avalanche Test Circuit and Waveforms

VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD
VDD
tp IL EAS
0.01Ω

tAV

Avalanche Test Circuit and Waveforms

VDS
RD
V
DS
DUT 90%

VGS
RG
VDD
10%
tp
VGS
td(on) tr td(off) tf

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HY1908D/U/S

Package Information
TO-252-2L

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HY1908D/U/S

TO-251-3L(IPAK)

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HY1908D/U/S

TO-251-3L(SIPAK)

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HY1908D/U/S

Devices Per Unit

Package Type Unit Quantity
TO-252-2L Tube 72
TO-251-3L Tube 72

Classification Profile

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HY1908D/U/S

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

3 3
Package Volume mm Volume mm
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C

Table 2. Pb-free Process – Classification Temperatures (Tc)

3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

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