Unit 4 Clean Room
Unit 4 Clean Room
Contents
Introduction about Clean room
What is contaminations
Sources of contaminations
Cleaning of Clean room
Clean room Standards
Clean room Do’s and Don’ts
Definition
It is clear that a clean room is a room that is clean. However, a clean room has a special meaning and it is defined in
the International Organization for Standardization (ISO) standard 14644-1 as:
Room in which the concentration of airborne particles is controlled, and which is constructed and used in a manner to
minimize the introduction, generation, and retention of particles inside the room and in which other relevant
parameters, e.g. temperature, humidity, and pressure, are controlled as necessary.
What is Contamination?
‘Any unwanted substance present in or on a material or any surface within a clean zone’.
Process or act that causes materials or surfaces to be spoiled with contaminating substances.
Film type and particulates type.
Contaminants can produce a “killer defect” in a miniature circuit.
Film contaminants of only 10 nm (nanometers) can drastically reduce coating adhesion on a wafer or chip.
Sources of Contamination
Five basic sources:
Facilities
People
Tools
Fluids
The product being manufactured.
Facilities:
Walls, floors and ceilings
Paint and coatings
Construc on material sheet rock saw dust etc.
Air conditioning debris
Room air and vapours
Spills and leaks
People:
Skin flakes and oil
Cosmetics and perfume
Spittle
Clothing debris (lint, fibres etc.
Hair
People are a major source of contamination in the clean room
PEOPLE ACTIVITY PARTICLES/MINUTE
(0.3 MICRONS & larger)
Motionless (standing or seated) 100,000
Walking about 2 mph 5,000,000
Walking about 3.5 mph 7,000,000
Walking about 5 mph 10,000,000
Tool Generated
Friction and wear particles
Lubricants and emissions
Vibrations
Brooms, mops and dusters
Fluids
Particulates floating in air
Bacteria, organics and moisture
Floor finishes or coatings
Cleaning chemicals
Where
Cn = maximum permitted number of particles per cubic meter
N = is the ISO class number, which must be a multiple of 0.1 and be 9 or less
D = is the particle size in micrometers
Clean room do’s:
All personal items such as keys, watches, rings, matches, lighters and cigarettes should be stored in the
personal locker outside the gowning room.
NO eating, smoking or gum chewing allowed inside the clean room.
Only garments approved for the clean room should be worn when entering.
NO cosmetics shall be worn in the clean rooms
Approved ball point pens shall be the only writing tool used.
Use of paper or fabric towels is prohibited.
NO tool should be allowed to rest on the surface of a bench or table. It should be place on a clean room
wiper.
Only approved clean room paper shall be allowed in the clean room.
Clean room Don'ts
Fast motions such as running, walking fast or horseplay.
Sitting or leaning on equipment or work surfaces.
Writing on equipment or garments.
Wearing the clean room garment outside the clean room.
Wearing torn or soiled garments
AIR PURITY
Vertical Unidirectional Air Flow
Water Purity
Ultra-pure water is used in the semiconductor industry principally to remove contaminants from the surface of
wafers being processed.
It is used in a variety of cleaning stages following processes such as etching.
This is a process step during which the wafer is immersed for a specified time in concentrated acid, e.g.
sulphuric/hydrogen peroxide, hydrofluoric, etc.
Residual acid on the wafer surface must be removed quickly to prevent over-etching and whatever chemical is
used to achieve this must not itself contribute any contaminant to the wafer surface.
The chemical normally used for this process is ultra-pure water (UPW), chosen because it is readily available in
crude form, is relatively cheap, can be purified to a state where it contains virtually no contaminants, and is an
excellent solvent for most of the chemicals used in wafer processing.
However, the excellent solvent properties of UPW also make it difficult to maintain in its pure state due to its
affinity for most contaminants existing in the atmosphere, in tanks, vessels and pipe work.
Ionic
Ionic species form the largest percentage of all contaminants which must be removed from the source
water.
The concentration and types that are present depend on the source of the local supply but the common
ions such as calcium, sodium, potassium, magnesium, chloride, sulphate, carbonate and bicarbonate will
almost certainly be predominant.
The principle methods for removing ionic species are reverse osmosis and ion exchange, economic
considerations determining the extent to which each is utilized.
Other potential sources of ionic contamination are regeneration chemicals, on-line chemical dosing,
pumps and pipe systems.
These contaminants, if present, will adversely affect the semiconductor's performance and will almost
certainly result in its failure.
Ionic contaminants have traditionally been the main area of interest in terms of removal, partly because
the methods are well established and partly because the means of monitoring the removal efficiency have
been readily and economically available.
The unit used for measuring ionic contamination is resistivity, which is the inverse of conductivity but an
easier unit to use at such low levels. Resistivity is quoted as megohm/cm at a reference temperature of
25°C, this being important as resistivity is temperature dependent.
Figure shows the relationship between resistivity and ionic contamination as ppm sodium chloride.
Non-Ionic
This class contains contaminants which are either truly non-ionic, being formed of covalently bonded
materials, or so weakly ionic that they may prove difficult to remove using standard ion exchange resins.
They may also be in the form of insoluble particulate matter which is present in the source water or which
has been generated by the water treatment plant, e.g. resin fines.
These contaminants may cause yield loss due to distortion between successive layers on the silicon wafer
or by short circuiting.
They are generally specified in terms of particles per litre above a particular size. The size of particle which
can be tolerated is a function of the device geometry but would normally be less than 0.1 micrometer.
Organic
The amount of organic compounds present in source water depends on whether it is from a hard water
catchment area or from a surface water reservoir.
Hard water would characteristically be clear, with a Total Dissolved Solids (TDS) concentration of over 500
ppm.
Surface water reservoirs, on the other hand, tend to produce soft water which has a TDS of below 100ppm
but which can be heavily laden with organics leached from the soil of the surrounding catchment area.
The organic compounds in soft water are complex and consist of humic, fulvic and other organic acids
created principally from decaying vegetation.
Organic contamination can be difficult to remove and the type and concentration can vary considerably
subject to seasonal changes. Organic molecules can cause yield loss due to staining and corrosion on the
wafer surface, or by conversion to smaller organic species by some of the water-treatment processes.
They can also cause fouling on ion exchange resins and membrane filters thus reducing the ability of these
stages to remove other contaminants. Where this fouling is irreversible, it can result in premature failure
and consequential replacement of resins and membranes.
Organic concentrations in UPW should be less than 10 ppb and preferably below 5 ppb.
On-line instrumentation at various stages of the plant is essential to provide early warning of problems and
to ensure that specifications are achieved.
Total organic concentration can be measured by conversion to carbon dioxide using either UV radiation or
chemicals, or by a combination of both.
Bacteria
Bacteria are ubiquitous, capable of existing in either aerobic (with oxygen) or anaerobic (without oxygen)
conditions and surviving in extremely harsh conditions to form resistant strains.
In UPW systems they are usually of the Gram-negative type and in terms of effective particle size can be
sub-micron.
The components used in water purification, such as ion exchange resins, provide an ideal environment for
bacteria to thrive and once established they can be difficult to remove as the chemicals traditionally used
would themselves cause contamination and irreversible damage to the substrate.
Bacteria can contaminate semiconductors by either behaving as a particle or by breaking up and leaving a
number of ionic species and pyrogens on the wafer surface.
Dissolved Gases
The most common dissolved gases in water are oxygen and carbon dioxide and this varies depending on
the source, pH and water temperature. Dissolved oxygen can cause enhanced oxidation at the wafer
surface and, unless removed, will be a variable in the final supply water.
Dissolved carbon dioxide forms bicarbonate and carbonate ions in solution, the equilibrium being
dependent on pH.
To achieve acceptable wafer yields, all the above contaminants must be removed to extremely low levels
and consistently maintained.
The level of each contaminant which is considered to be acceptable is being constantly revised (but never
upwards) as device geometries become smaller and therefore less tolerant of impurities.
Materials:
During the sequence most of the operations take place in an ordinary factory environment.
Protection against contamination is provided, for the most part, by doing the processing within sealed
systems.
Any contamination introduced during that step will get into the ingot and will either cause a failure in the
process to make a single crystal or cause unacceptable electrical properties to develop.
The last part of the process also requires a clean environment (minimum standard is ISO 5 (Class 100)) to allow
the equipment to produce the required finish, thickness, taper and flatness. Also, great care must be taken to
avoid leaving any mobile ions or doping elements on the surface.
Subsequent high temperature operations could then distribute these into the crystalline structure and destroy
the desired electrical properties.
Wafer Fabrication
In this phase of the manufacturing, all the active and passive elements of the semiconductor circuits are built
onto or into the polished silicon wafer.
On the microscopic level one can observe a cross-section of pure silicon being changed by:
The addition of atoms deep into the pure metal to a controlled depth and concentration ; metal being
etched away; layers of silicon oxide being deposited over everything then selectively etched away to
be replaced by silicon with other impurities, or aluminium; then layers being selectively etched away
and replaced by more oxide and metal.
The process is repeated until many layers are applied, interconnected, stabilized, passivated, etc.
Processes include: heat up to 1100°C; attack by exceptionally aggressive chemicals; flooding with chemical
vapours so toxic that the most rigorous controls are required to protect people; exposure to violent levels of
ionizing radiation and superheated ionized plasmas.
All of these take place to create circuits and active devices whose dimensions range down to 0.01 micrometre
for critical features.
All the dimensions are controlled by photographic processes (photo-lithography), the success or failure of
manufacturing is absolutely determined by the control (and elimination) of contamination.
The minimum class required is ISO 5 (Class 100), with the most critical steps requiring ISO 3 (Class 1) or better.
Air Flow-Direction
In most cases, for the maximum control of product cleanliness, the air flow should be vertically downward and
should meet the ISO 3 (Class 1) or better cleanliness specification as it flows onto the product.
Obviously, vertical flow onto the product is not possible in an evaporator, reactor or diffusion furnace.
In those special cases, supplemental filter-blower units, scavenging air vanes, etc., should be tried.
Some special environmental chambers which use a horizontal airflow or an airflow 45 degrees to the
horizontal, have been quite successful in reducing the number of particles reaching the product in some
production equipment. Such equipment, if available, may be worth investigating.
ULPA filters 99.9995% efficient when tested at manufacture against 0.1 micrometre sized particles, and tested
and certified at installation with a suitable particle challenge, must be used for ISO 3 (Class 1), or better.
To permit ultimate flexibility and minimal record keeping of what kind of filter goes where, and because the
differential cost between 99.00% and 99.9995% efficient filters is small for the convenience given, it is
recommended that the same higher grade type of filters be used throughout the cleanroom.
The air should exit the room through perforated panel floors with integral air dampers to regulate the air flow.
The floor covering should be made from a conductive, high pressure laminate and the system must be
grounded.
ISO Classes 3-5 (Classes 1-100) areas will require 100% coverage Classes 6 and 7 (Classes 1000 and 10000)
require only 50% or less coverage by perforated panels.
Some solid panels will be required for use under equipment which has a closed base (it is easier to cut utility
piping holes in solid panels).
An alternative, acceptable solution to the design of air flow for ISO 6 and 7 (Classes 1000 and 10000) is to use
classical turbulent ventilation, the return air vents being in walls or islands and close to floor level.
This may or may not pose a problem for ducting the return air back to the recalculating air systems, depending
on over-all design.
Air Flow-Quantity
ISO Classes 3-5 (Classes 1-100) should be designed to between 0.3 and 0.5 m/s depending on the flow through
the respective clean zones.
It is important to observe the effect of air flow through critical production-equipment interface-locations.
There are occasions when a reduction of airflow can result in a significant lowering of the particle level or
reduction in the machine interference (cooling). Classes ISO 6, ISO 7 and ISO 8 (Classes 1000, 10 000 and 100
000) should be designed for 50, 30 and 18 ft/min (0.25, 0.15 and 0.09 m/s) flow through them.
Primary control is achieved by providing equivalent filter/solid panels in the floor. After installation and start-
up, adjustment of filter and perforated-panel dampers will be used to fine-tune air flow direction and
quantity.