6MBI50S-120 IGBT Modules

IGBT MODULE ( S series)

1200V / 50A 6 in one-package
Features
· Compact package
· P.C.board mount
· Low VCE(sat)
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Symbol Rating Unit
Collector-Emitter voltage VCES 1200 V Equivalent Circuit Schematic
Gate-Emitter voltage VGES ±20 V
1 3 (P )
Collector Continuous Tc=25°C IC 75 A
current Tc=80°C 50
1ms Tc=25°C IC pulse 150 A 1 (G u ) 5 (G v) 9 (G w )

Tc=80°C 100
2 (E u) 6 (E v) 1 0 (E w)
-I C 50 A
1 6 (U ) 1 5 (V ) 1 4 (W )
1ms -IC pulse 100 A
3 (G x) 7 (G y) 1 1 (G z)
Max. power dissipation (1 device) PC 360 W
Operating temperature Tj +150 °C 8 (E y)
4 (E x ) 1 2 (E z)
Storage temperature Tstg -40 to +125 °C 1 7 (N )

Isolation voltage Vis AC 2500 (1min.) V

Screw torque Mounting *1 3.5 N·m

*1 : Recommendable value : 2.5 to 3.5 N·m (M5)

Electrical characteristics (Tj=25°C unless otherwise specified)

Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current ICES – – 1.0 VGE=0V, VCE=1200V mA
Gate-Emitter leakage current IGES – – 0.2 VCE=0V, VGE=±20V µA
Gate-Emitter threshold voltage VGE(th) 5.5 7.2 8.5 VCE=20V, IC=50mA V
Collector-Emitter saturation voltage VCE(sat) – 2.3 2.65 Tj=25°C VGE=15V, IC=50A V
– 2.8 – Tj=125°C
Input capacitance Cies – 6000 – VGE=0V pF
Output capacitance Coes – 1250 – VCE=10V
Reverse transfer capacitance Cres – 1100 – f=1MHz
Turn-on time ton – 0.35 1.2 VCC=600V µs
tr – 0.25 0.6 IC=50A
tr(i) – 0.1 – VGE=±15V
Turn-off time toff – 0.45 1.0 RG=24Ω
tf – 0.08 0.3
Diode forward on voltage VF – 2.5 3.3 Tj=25°C IF=50A, VGE=0V V
– 2.0 – Tj=125°C
Reverse recovery time trr – – 0.35 IF=50A µs

Thermal resistance characteristics

Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c) – – 0.35 IGBT °C/W
Thermal resistance Rth(j-c) – – 0.75 FWD °C/W
Rth(c-f)*2 – 0.05 – the base to cooling fin °C/W
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI50S-120 IGBT Modules

Characteristics

Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
o o
Tj= 25 C (typ.) Tj= 125 C (typ.)
120 120

VGE= 20V 15V 12V VGE= 20V 15V 12V

100 100

80 80
Collector current : Ic [ A ]

Collector current : Ic [ A ]
10V
10V
60 60

40 40

20 20

8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ]

Collector current vs. Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage
o
VGE=15V (typ.) Tj= 25 C (typ.)
120 10

o o
Tj= 25 C Tj= 125 C
100
8
Collector - Emitter voltage : VCE [ V ]

80
Collector current : Ic [ A ]

60

40
Ic= 100A

Ic= 50A
2
20 Ic= 25A

0 0
0 1 2 3 4 5 5 10 15 20 25

Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)

o
VGE=0V, f= 1MHz, Tj= 25 C
o Vcc=600V, Ic=50A, Tj= 25 C
20000 1000 25

10000

800 20
Collector - Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]

Cies
Gate - Emitter voltage : VGE [ V ]

600 15

1000
400 10

Coes

Cres
200 5

100 0 0
0 5 10 15 20 25 30 35 0 100 200 300 400 500
Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]
6MBI50S-120 IGBT Modules

Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=24Ω,Tj=25oC Vcc=600V,VGE=±15V, Rg=24Ω,Tj=125oC
1000 1000

toff

500 toff 500

Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

ton ton

tr
tr

tf

100 100
tf

50 50
0 20 40 60 80 0 20 40 60 80
Collector current : Ic [ A ] Collector current : Ic [ A ]

Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=50A,VGE=±15V, Tj=25oC Vcc=600V,VGE=±15V, Rg=24Ω,Tj=125oC
5000 14

ton o
12 Eon(125 C)
toff
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

tr
Switching time : ton, tr, toff, tf [ nsec ]

10

1000
o
8 Eon(25 C)

500

6 o
Eoff(125 C)

4 o
Eoff(25 C)
o
Err(125 C)

100 2
o
Err(25 C)

50 0
10 50 100 500 0 20 40 60 80 100
Gate resistance : Rg [ Ω ] Collector current : Ic [ A ]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area
o
Vcc=600V,Ic=50A,VGE=±15V, ,Tj=125oC +VGE=15V,-VGE<= 15V, Rg>24Ω,Tj<125
= = C
40 120

100
Eon
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

30

80
Collector current : Ic [ A ]

20 60

40

10
Eoff
20

Err
0 0
10 50 100 500 0 200 400 600 800 1000 1200 1400
Gate resistance : Rg [ Ω ] Collector - Emitter voltage : VCE [ V ]
6MBI50S-120 IGBT Modules

Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)
Vcc=600V,VGE=±15V, Rg=24Ω
120 300

o o
Tj=125 C Tj=25 C
100 o
trr(125 C)

Reverse recovery time : trr [ nsec ]

Reverse recovery current : Irr [ A ]
80 100
Forward current : IF [ A ]

o
trr(25 C)

60

o
40 Irr(125 C)

o
Irr(25 C)
20

0 10
0 1 2 3 4 0 20 40 60 80
Forward on voltage : VF [ V ] Forward current : IF [ A ]

Transient thermal resistance

1 FWD
Thermal resistanse : Rth(j-c) [ C/W ]

IGBT
o

0.1

M623
0.01
0.001 0.01 0.1 1
Pulse width : Pw [ sec ]

Outline Drawings, mm
107.5±1
4-ø6.1±0.3 93±0.3
16.02 15.24 15.24 15.24 15.24
2-ø5.5±0.3
17 13

69.6±0.3 ø2.5±0.1
1.5
27.6±0.3
32±0.3
+ 0.5
41.91
45±1

6
11

93±0.3
ø2.1±0.1
A A
1 12 Section A-A
3.81 1.15±0.2 ø0.4
0.8±0.2

16.02 11.43 11.43 11.43 11.43 11.43

1.5±0.3
3.5±0.5

1±0.2
20.5±1

2.5±0.3
17±1

6.5±0.5

Shows theory dimensions