hh tt tt pp :: // // ww ww ww ..

nn tt m
m dd tt .. cc oo m
m

Tunnel Current in MIM System

Consider two metal electrodes with an insulator of

John G. Simmons Formula thickness L between them. If electrodes are under
the same potential, the system is in thermodynamic
Now, using the Sommerfeld model equilibrium (see chapter "Metal Energy-Band
(see chapter "Metal Energy-Band Structure") and WKB Structure") and Fermi levels of electrodes coincide
approximation (see chapter "Tunneling Effect in (Fig. 1). However, if electrodes are under different
Quasiclassical Approximation") and assuming that T = potentials, current flow between them is available.
0, potential barrier is of arbitrary shape and the Fig. 2 shows the energy diagram of electrodes with
mass of electrons is isotropic in space, we can applied bias energy eV. Potential barrier width for
derive an expression for the tunneling current electrons occupying the Fermi level is denoted as δz
flowing in a metal-insulator-metal (MIM) system. = z2 – z1. Consider that all the current flowing in the
system is due to the tunneling effect.

Probability D(Ez) of the electron transmission

through the po-tential barrier of height U(z) is given
by expression (4) in chapter "Tunneling Effect in
Quasiclassical Approximation". For the number of
electrons N1 tunneling through the barrier from
electrode 1 into electrode 2, we can write [1], [2]
∞ ∞ ∞
pz
N1 = ∫ ∫ ∫ 4π
−∞−∞−∞
3 3
hm
f1 ( E )(1 − f 2 ( E + eV )) D( E z )dp x dp y dp z =

E∞

Fig. 1. Diagram of MIM system in equilibrium. = ∫ D( E z )n( p z )dE z

0
j1 and j2 – work function of the left and right metals, respectively
(1)

where
∞ ∞
1
n( p z ) =
4π 3h 3 ∫ ∫ f ( E )(1 − f
−∞−∞
1 2 ( E + eV ))dp x dp y (2)

and Em – maximum energy of tunneling electrons.

Integration of expression (2) can be performed in

polar coordinates. Because in the model under
consideration p r2 = p x2 + p y2 , Er = pr2 / 2m and total
energy is E = E z + Er , changing variables
Fig. 2. Model of MIM system with an arbitrary shape potential
barrier. Positive potential is applied to the right metal p x = pr cosθ , p y = p r sin θ , we get
1.2 Tunnel Current in MIM System
 1
2π ∞
{
D ( E z )∞ exp − Aδ z μ + ϕ ( z ) − E z } (8)
n( p z ) =
4π h 3 3 ∫ ∫ f ( E )(1 − f
0 0
1 2 ( E + eV )) pr dpr dθ =

∞
where ϕ – average barrier height relative to Fermi
m
= ∫ f ( E )(1 − f ( E + eV ))dEr z2
1
2π 2 h 3 ∫ φ ( z )dz ;
1 2
level of the negative electrode; φ =
0
δz z1

(3) 2m
A = 2β , β – dimensionless factor defined in
h2
Substituting (3) in (1), we obtain
the Appendix (A6).
E∞ ∞
m
N1 =
2π 2 h 3 ∫ D( E z )dE z ∫ f1 ( E z + Er )(1 − f 2 ( E z + Er + eV ))dEr
0 0
At T = 0 K
(4)
⎧eV , при E z ∈ [0; μ − eV ];
me ⎪⎪
The number of electrons N2 tunneling back from ξ ( E z ) = 2 3 ⎨μ − Ez , при E z ∈ [μ − eV ; μ ] (9)
electrode 2 into electrode 1 is calculated in the same 2π h ⎪
way. According to (4) from chapter "Tunneling ⎩⎪0, при E z > μ
Effect in Quasiclassical Approximation", the
potential barrier transparency in the given case will Introducing (8) and (9) into (7), we obtain
be such as if positive voltage V is applied to
[ ]
μ −eV
electrode 1 relative to electrode 2. In this case me ⎧⎪
J = 2 3 ⎨eV ∫ exp − Aδ z μ + φ − E z dEz +
E∞ ∞ 2π h ⎪⎩ 0
m
N2 = ∫ D( E )dE ∫ f ( E z + Er + eV )(1 − f1 ( E z + Er ))dEr
[ ]⎫⎪
μ
2π 2 h 3
z z 2

∫ μ δ μ φ
0 0
+ ( − E ) exp − A + − E dE z⎬ (10)
(5) z z z
⎪⎭
μ − eV

Net electrons flow N through the barrier is

obviously N = N1 – N2. Let us denote
Integrating (10), we get
∞

[ ]}
me
ξ1 ( E z ) =
2π 2 h 3 ∫ f ( E )(1 − f
0
1 2 ( E + eV ))dEr J=
α
δ z2
{ ( )
φ exp − Aδ z φ − (φ + eV )exp − Aδ z φ + eV

(11)
∞
me
ξ 2 (Ez ) =
2π 2 h 3 ∫f
0
2 ( E + eV )(1 − f1 ( E ))dEr
where α = e / 4π 2 β 2 h .

me ∞ Thus, expression (11) approximates the tunneling

[ f1 ( E ) − f 2 ( E + eV )]dEr
2π 2h 3 ∫0
ξ ( Ez , eV ) = ξ1 − ξ 2 = current in the MIM system for arbitrary barrier
shape.
(6)
Summary
Then, the tunneling current density J is
− The general expression (7) to calculate the
E∞
tunneling current in the MIM system was
J= ∫ D( E )ξ ( E , eV )dE
0
z z z (7)
derived in this chapter.
− The analytic approximate solution (11) of
According Fig. 2, U(z) can be written in the tunneling current in the MIM system was
form U ( z ) = μ + ϕ ( z ) . Then, integrating (4) calculated.
from chapter "Tunneling Effect in Quasiclassical
Approximation" and using expression (A5) from
Appendix, we get
1.2 Tunnel Current in MIM System
 References
where the correction factor is
1. Burshtein E., Lundquist S. Tunneling phenomena
in solid bodies. Mir, 1973 (in Russian) z2

∫ [ f ( z) − f ] dz
1 2
2. John G. Simmons. J. Appl. Phys. - 1963. - V. 34 β = 1− (A6)
1793. 8 f δz
2
z1

3. John G. Simmons. J. Appl. Phys. - 1963. - V. 34

238.
John G. Simmons Formula in a Case of Small,
• Appendix Intermediate and High Voltage (Field Emission
Mode)
Let us integrate an arbitrary function f (z ) from According chapter John G. Simmons Formula, the
z1 to z2. approximate expression for the tunneling current in
the MIM system can be written as [1]:
z2

∫
z1
f ( z )dz (A1)
J=
α
{ [
φ exp(− Aδ z φ ) − (φ + eV ) exp − Aδ z φ + eV ]}
δ z2

Defining f as (1)
z2
1 2m
f =
δz ∫ f ( z)dz
z1
(A2) where α = e / 4π 2 β 2 h , A = 2 β
h2
, φ – average

barrier height, δ z – barrier width, V– voltage

where f – average value of a function f on the between electrodes.
interval from z1 to z2, δ z = z1 − z 2 . Then equation
(A1) can be rewritten as Small voltage
z2 z2
[ f ( z) − f ]dz At low voltages φ >> eV , expression (1) can be
∫
z1
f ( z )dz = f ∫
z1
1+
f
(A3)
simplified [1]

Considering a Taylor series expansion of the

γ φV
integrand (A3) in and neglecting ( f ( z ) − f ) / f
3
[ ] J= exp(− Aδ z φ ) (2)
and higher order members, we get δz

z2
⎧⎪
z2
[
f ( z) − f ] [
f ( z) − f ] ⎫⎪⎬dz
2
where γ =
e 2m
. Since φ >> eV , we can
∫ f ( z )dz = f ∫ ⎨1 +
z1 ⎪
2f
−
8f 2 ⎪⎭
4βπ 2 h 2
z1 ⎩
consider that φ doesn't depend on V. Thus, in the
(A4) case of small applied voltage, the tunneling current
proportionate to V. Energy diagram of the MIM
The second term in (A4) vanishes upon integration, system then φ >> eV is shown on Fig. 1.
therefore (A4) can be expressed as
z2

∫
z1
f ( z )dz = β f δz (A5)

1.2 Tunnel Current in MIM System

 γ φ
J= exp(− Aδ z φ )(V + σV 3 ) (3)
δz

( Ae) 2 Ae 2
where σ = −
96φ δ z2 32δ zφ 3 2

High voltage – Field emission mode

The case when eV > φ2 corresponds to energy

diagram shown in Fig. 3 and to the following
δ z = Lφ1 /(φ1 − φ2 + eV ) , φ = φ1 / 2 .

Fig. 1. Potential barrier in the MIM system then V ~ 0.

φ1 and φ2 – work function of the left and right metals,
respectively

In this case, as shown on Fig. 1, δ z = L and

φ = (φ1 + φ2 ) / 2

Intermediate voltage

If eV < φ2 , then δ z = L and φ = (φ1 + φ2 − eV ) / 2

(Fig. 2).

Fig. 3. Potential barrier in the MIM system then eV > φ2 .

φ1 and φ2 – work function of the left and right metals,
respectively.

Substituting δ z and φ into equation (1), we obtain

e3 F 2 ⎧⎪ ⎡ 2β 3 2 2m ⎤
J= ⎨exp ⎢− φ1 ⎥−
8π 2 hφ1 β 2 ⎪⎩ ⎣ eF h ⎦
(4)
Fig. 2. Potential barrier in the MIM system then eV < φ2 . ⎛ 2eV ⎞ ⎡ 2 β 3 2 2m 2eV ⎤ ⎫⎪
⎜⎜1 + ⎟⎟ exp ⎢− φ1 1+ ⎥⎬
φ1 φ2 φ1 ⎠ ⎣ eF φ1
⎝ h ⎦ ⎪⎭
and – work function of the left and right metals,
respectively

In [2] it is shown, that for this case the tunneling where F = V / L – electric field strength.
current-voltage relation is given by

1.2 Tunnel Current in MIM System

At high applied voltage (eV > φ1 + μ ) the Fermi Summary
level of electrode 2 is lower than the conduction
− Depend upon magnitude of applied voltage,
band bottom of electrode 1. Under such conditions,
formula (1) can be simplified (2)–(5).
electrons can not tunnel from electrode 2 into
− It is possible to describe the experimental
electrode 1 because of lack of empty states. An
tunneling current dependences by approximated
inverse situation is for electrons tunneling from
expressions (2)–(5) in accordance with
electrode 1 into empty states of electrode 2. This
magnitude of applied voltage.
process is similar to autoelectronic emission from a
metal into vacuum. Thus, since eV > φ1 + μ , the
second summand in (4) can be neglected and for the References
current we get
1. John G. Simmons. J. Appl. Phys. - 1963. - V. 34
e 3
F ⎡ 2β
2
2m φ ⎤ 32 1793.
J= exp⎢− ⎥
1
(5) 2. John G. Simmons. J. Appl. Phys. - 1963. - V. 34
8π hβ φ1
2 2
⎣ e h F ⎦
238.
3. Dobretzov L.N., Gomounova M.V. Emission
where coefficient β = 23/24. This result agrees electronics. Nauka, 1966 (in Russian)
qualitatively with an analytical expression for the
field emission current density [3].

Thus, using formulas (2)–(5), we can compute the

tunnel current at given system parameters and plot
current-voltage characteristics. Fig. 4 shows
theoretical tunneling current-applied voltage plot in
case of carbon electrode 1 ( φ1 = 4,7 эВ) and
platinum electrode 2 ( φ2 = 5,3 эВ) at δ z = 5 Å and
contact area S = 10–17 m2.

Fig. 4. Current-voltage characteristic for carbon electrode 1

and platinum electrode 2 at δ z = 5 Å and contact area 10–17 m2.
Parts of J(V) curve correspond to the following expressions:
AB – (22), BC – (23), CD – (24), DE – (25).

1.2 Tunnel Current in MIM System