SEMICONDUCTOR KTC3875S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L B L
FEATURES DIM MILLIMETERS
2.93 +_ 0.20
・Excellent hFE Linearity A
B 1.30+0.20/-0.15
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
・High hFE : hFE=70～700.
G
E 2.40+0.30/-0.20
H
1 G 1.90
・Low Noise : NF=1dB(Typ.), 10dB(Max.). H 0.95
・Complementary to KTA1504S. J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
・Suffix U Qualified to AEC-Q101 for Automotive P P
L 0.55
M 0.20 MIN
: Automotive and standard product are electrically and thermally the same, N 1.00+0.20/-0.10
N
C
P 7
except where specified.
J
Q 0.1 MAX
ex) KTC3875S-Y-RTK/PU, KTC3875S-Y-RTK/HU
K
M
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
SOT-23
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
Base Current IB 30 mA
Collector Power Dissipation PC 150 mW Marking
Junction Temperature Tj 150 ℃ h FE Rank Lot No.
Storage Temperature Range Tstg -55～150 ℃
Type Name
AL
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA
DC Current Gain hFE(Note) VCE=6V, IC=2mA 70 - 700
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - 0.86 1.0 V
Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
VCE=6V, IC=0.1mA
Noise Figure NF - 1.0 10 dB
f=1kHz, Rg=10kΩ
Note : hFE Classification O:70～140, Y:120～240, GR(G):200～400, BL(L):350～700
2015. 4. 09 Revision No : 4 1/3
KTC3875S
I C - V CE h FE - I C
280 3k
COLLECTOR CURRENT I C (mA)
COMMON EMITTER COMMON
240 Ta=25 C EMITTER
DC CURRENT GAIN h FE
5.0 1k
6.0
200 3.0 500
2.0
160 300 VCE =6V
Ta=100 C
Ta=25 C
1.0
120 100
Ta=-25 C
80 0.5 50
30
40 I B =0.2mA V CE =1V
0
0 10
0 1 2 3 4 5 6 0.1 0.3 1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
V CE(sat) - I C VBE(sat) - I C
COLLECTOR-EMITTER SATURATION
3 30
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
I C /I B =10
I C /I B =10
Ta=25 C
VOLTAGE VBE(sat) (V)
1 10
0.5 5
V CE(sat) (V)
0.3 3
0.1 1
Ta=100 C
0.05 0.5
0.03 0.3
Ta=25 C
Ta=-25 C
0.01 0.1
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
fT - IE I B - V BE
TRANSITION FREQUENCY f T (MHz)
3k 3k
COMMON EMITTER COMMON EMITTER
V CE =10V VCE =6V
1k
BASE CURRENT I B (µA)
Ta=25 C
1k
300
500
300 100
5 C
00 C
5 C
30
Ta=2
Ta=-2
Ta=1
100 10
50
3
30
1
10 0.3
-0.1 -0.3 -1 -3 -10 -30 -100 -300 0 0.2 0.4 0.6 0.8 1.0 1.2
EMITTER CURRENT I E (mA) BASE-EMITTER VOLTAGE V BE (V)
2015. 4. 09 Revision No : 4 2/3
KTC3875S
h PARAMETER - I C h PARAMETER - V CE
5k 5k
COMMON EMITTER COMMON EMITTER
VCE =12V, f=270Hz 3k
I C =2mA
1k Ta=25 C Ta=25 C f=270Hz
GR 1k
BL BL
300 h fe GR
Y 300 h fe
O Y
100 O
h PARAMETER
h ie xkΩ BL
h PARAMETER
100
30 BL GR
GR Y
30
Y O GR
h oe xµ
10 Ω
h oe xµ
O Ω
BL
10 GR
3 BL O Y
h ie xkΩ
3 BL
Y GR
BL
1 Y O
Y
GR
1
0.3 O O
h re x10 -4
0.3 h re x10 -4
0.1
0.1 0.3 1 3 10 50
0.1
COLLECTOR CURRENT I C (mA) 0.5 1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE V CE (V)
P C - Ta
200
COLLECTOR POWER DISSIPATION
150
P C (mW)
100
50
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
2015. 4. 09 Revision No : 4 3/3
KTC3875S
REVISION HISTORY
REV. DATE OF
DESCRIPTION OF REVISION REVIEWER
NO REVISION
0 New Technical Data Sheet 1995. 11. 01 Y. Han
1 Marking Lot No. change 1998. 6. 15 K.W. Nam
2 Product name change, according to name system of SOT-23 2001. 2. 24 J.S.Kim
3 Add VBE(sat) characteristic. 2004. 12. 3 H.C. Eom
4 Add quailified to AEC-Q101 for Automotive 2015. 4. 09 J.W. Park
2015. 4. 09 Revision No : 4 4/3
