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Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the SavantIC Semiconductor 2SB688 silicon PNP power transistor. The transistor is in a TO-3P(I) package and is intended for power amplifier applications requiring 45-50W of audio frequency power. Key specifications include an absolute maximum collector-emitter voltage of -120V, a collector current rating of -8A, and typical DC current gain values between 55-160. Dimensional drawings of the TO-3P(I) package and mounting details are also included.

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118 views4 pages

Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the SavantIC Semiconductor 2SB688 silicon PNP power transistor. The transistor is in a TO-3P(I) package and is intended for power amplifier applications requiring 45-50W of audio frequency power. Key specifications include an absolute maximum collector-emitter voltage of -120V, a collector current rating of -8A, and typical DC current gain values between 55-160. Dimensional drawings of the TO-3P(I) package and mounting details are also included.

Uploaded by

criman45
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB688

DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SD718

APPLICATIONS
·Power amplifier applications
·Recommend for 45~50W audio frequency
amplifier output stage

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
3 Base

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -120 V

VCEO Collector-emitter voltage Open base -120 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -8 A

IB Base current -0.8 A

PT Total power dissipation TC=25 80 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB688

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -120 V

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V

VBE Base-emitter voltage IC=-5A ; VCE=-5V -1.5 V

ICBO Collector cut-off current VCB=-120V; IE=0 -10 µA

IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA

hFE DC current gain IC=-1A ; VCE=-5V 55 160

fT Transition frequency IC=-1A ; VCE=-5V 10 MHz

Cob Output capacitance IE=0 ; VCB=-10V ;f=1MHz 280 pF

hFE Classifications
R O

55-110 80-160

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB688

PACKAGE OUTLINE

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB688

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