STM32F302xB STM32F302xC

STM32F303xB STM32F303xC
ARM Cortex-M4F 32b MCU+FPU, up to 256KB Flash+48KB SRAM
4 ADCs, 2 DAC ch., 7 comp, 4 PGA, timers, 2.0-3.6 V operation
Datasheet − production data

Features
■ Core: ARM® 32-bit Cortex™-M4F CPU (72 MHz
max), single-cycle multiplication and HW
LQFP48 (7 × 7 mm)
division, DSP instruction with FPU (floating-point LQFP64 (10 × 10 mm)
unit) and MPU (memory protection unit). LQFP100 (14 × 14 mm)

■ Operating conditions: ■ Up to 13 timers

– VDD, VDDA voltage range: 2.0 V to 3.6 V – One 32-bit timer and two 16-bit timers with
■ Memories up to 4 IC/OC/PWM or pulse counter and
– 128 to 256 Kbytes of Flash memory quadrature (incremental) encoder input
– Up to 40 Kbytes of SRAM on data bus with – Up to two 16-bit 6-channel advanced-control
HW parity check timers, with up to 6 PWM channels,
– 8 Kbytes of SRAM on instruction bus with deadtime generation and emergency stop
HW parity check (CCM) – One 16-bit timer with 2 IC/OCs, 1
■ CRC calculation unit OCN/PWM, deadtime generation and
■ Reset and supply management emergency stop
– Power-on/Power down reset (POR/PDR) – Two 16-bit timers with IC/OC/OCN/PWM,
– Programmable voltage detector (PVD) deadtime generation and emergency stop
– Low power modes: Sleep, Stop and Standby – Two watchdog timers (independent, window)
– VBAT supply for RTC and backup registers – SysTick timer: 24-bit downcounter
■ Clock management – Up to two 16-bit basic timers to drive the
– 4 to 32 MHz crystal oscillator DAC
– 32 kHz oscillator for RTC with calibration ■ Calendar RTC with Alarm, periodic wakeup from
– Internal 8 MHz RC with x 16 PLL option Stop/Standby
– Internal 40 kHz oscillator ■ Communication interfaces
■ Up to 87 fast I/Os – CAN interface (2.0B Active)
– All mappable on external interrupt vectors – Two I2C Fast mode plus (1 Mbit/s) with 20
– Several 5 V-tolerant mA current sink, SMBus/PMBus, wakeup
■ 12-channel DMA controller from STOP
■ Up to four ADC 0.20 µS (up to 39 channels) with – Up to five USART/UARTs (ISO 7816
selectable resolution of 12/10/8/6 bits, 0 to 3.6 V interface, LIN, IrDA, modem control)
conversion range, separate analog supply from – Up to three SPIs, two with multiplexed I2S
2 to 3.6 V interface, 4 to 16 programmable bit frame
■ Up to two 12-bit DAC channels with analog – USB 2.0 full speed interface
supply from 2.4 to 3.6 V – Infrared Transmitter
■ Seven fast rail-to-rail analog comparators with ■ Serial wire debug, JTAG, Cortex-M4F ETM
analog supply from 2 to 3.6 V ■ 96-bit unique ID
■ Up to four operational amplifiers that can be
used in PGA mode, all terminal accessible with Table 1. Device summary
analog supply from 2.4 to 3.6 V Reference Part number
■ Up to 24 capacitive sensing channels supporting
touchkey, linear and rotary touch sensors STM32F302CB, STM32F302CC, STM32F302RB,
STM32F302xx
STM32F302RC, STM32F302VB, STM32F302VC
STM32F303CB, STM32F303CC, STM32F303RB,
STM32F303xx
STM32F303RC, STM32F303VB, STM32F303VC

January 2013 Doc ID 023353 Rev 5 1/133

This is information on a product in full production. www.st.com 1
Contents STM32F302xx/STM32F303xx

Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.1 ARM® Cortex™-M4F core with embedded Flash and SRAM . . . . . . . . . 13
3.2 Memory protection unit (MPU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.3 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.4 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.5 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.6 Cyclic redundancy check (CRC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.7 Power management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.7.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.7.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.7.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.7.4 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.8 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.9 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.10 Direct memory access (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.11 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.11.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 19
3.12 Fast analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.12.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.12.2 Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.12.3 VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.12.4 OPAMP reference voltage (VOPAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.13 Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.14 Operational amplifier (OPAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.15 Fast comparators (COMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.16 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.16.1 Advanced timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.16.2 General-purpose timers (TIM2, TIM3, TIM4, TIM15, TIM16, TIM17) . . 24
3.16.3 Basic timers (TIM6, TIM7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

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3.16.4 Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

3.16.5 Window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.16.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.17 Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 25
3.18 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.19 Universal synchronous/asynchronous receiver transmitter (USART) . . . 27
3.20 Universal asynchronous receiver transmitter (UART) . . . . . . . . . . . . . . . 27
3.21 Serial peripheral interface (SPI)/Inter-integrated sound interfaces (I2S) . 28
3.22 Controller area network (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.23 Universal serial bus (USB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.24 Infrared Transmitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.25 Touch sensing controller (TSC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.26 Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.26.1 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.26.2 Embedded trace macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

4 Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50

6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.3.2 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 59
6.3.3 Embedded reset and power control block characteristics . . . . . . . . . . . 59
6.3.4 Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
6.3.5 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

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6.3.6 Wakeup time from low-power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73

6.3.7 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
6.3.8 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
6.3.9 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
6.3.10 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
6.3.11 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
6.3.12 Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
6.3.13 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
6.3.14 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.3.15 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
6.3.16 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
6.3.17 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
6.3.18 ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
6.3.19 DAC electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
6.3.20 Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
6.3.21 Operational amplifier characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 116
6.3.22 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
6.3.23 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118

7 Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

7.1 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
7.2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
7.2.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
7.2.2 Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . . 127

8 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130

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STM32F302xx/STM32F303xx List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. STM32F30xB/C family device features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . 10
Table 3. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 4. Comparison of I2C analog and digital filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 5. STM32F30xB/C I2C implementation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 6. USART features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 7. STM32F30xB/C SPI/I2S implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 8. Capacitive sensing GPIOs available on STM32F302xx/STM32F303xx devices . . . . . . . . 29
Table 9. No. of capacitive sensing channels available on STM32F302xx/STM32F303xx devices . 30
Table 10. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 11. STM32F302xx/STM32F303xx pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 12. Alternate functions for port A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 13. Alternate functions for port B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 14. Alternate functions for port C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 15. Alternate functions for port D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 16. Alternate functions for port E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 17. Alternate functions for port F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 18. STM32F30xB/C memory map and peripheral register boundary addresses . . . . . . . . . . . 51
Table 19. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 20. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 21. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 22. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 23. Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 24. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 25. Programmable voltage detector characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 26. Embedded internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 27. Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 28. Typical and maximum current consumption from VDD supply at VDD = 3.6V . . . . . . . . . . . 62
Table 29. Typical and maximum current consumption from the VDDA supply . . . . . . . . . . . . . . . . . . 63
Table 30. Typical and maximum VDD consumption in Stop and Standby modes. . . . . . . . . . . . . . . . 65
Table 31. Typical and maximum VDDA consumption in Stop and Standby modes. . . . . . . . . . . . . . . 65
Table 32. Typical and maximum current consumption from VBAT supply. . . . . . . . . . . . . . . . . . . . . . 66
Table 33. Typical current consumption in Run mode, code with data processing running from Flash 67
Table 34. Typical current consumption in Sleep mode, code running from Flash or RAM . . . . . . . . . 68
Table 35. Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Table 36. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Table 37. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 38. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 39. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 40. HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 41. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Table 42. HSI oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Table 43. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 44. PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 45. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 46. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 47. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 48. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84

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List of tables STM32F302xx/STM32F303xx

Table 49. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84

Table 50. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Table 51. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Table 52. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 53. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 54. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 55. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 56. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 57. IWDG min/max timeout period at 40 kHz (LSI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 58. WWDG min-max timeout value @72 MHz (PCLK). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 59. I2C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 60. I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 61. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 62. I2S characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Table 63. USB startup time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 64. USB DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 65. USB: Full-speed electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 66. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 67. Maximum ADC RAIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 68. ADC accuracy - limited test conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 69. ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 70. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Table 71. Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 72. Operational amplifier characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 73. TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 74. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 75. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 76. LQPF100 – 14 x 14 mm, low-profile quad flat package mechanical data. . . . . . . . . . . . . 120
Table 77. LQFP64 – 10 x 10 mm low-profile quad flat package mechanical data . . . . . . . . . . . . . . 122
Table 78. LQFP48 – 7 x 7 mm, 48-pin low-profile quad flat package mechanical data . . . . . . . . . . 124
Table 79. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 80. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 81. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130

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STM32F302xx/STM32F303xx List of figures

List of figures

Figure 1. STM32F302xB/STM32F302xC block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 2. STM32F303xB/STM32F303xC block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 3. Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 4. Infrared transmitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 5. STM32F302xx/STM32F303xx LQFP48 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 6. STM32F302xx/STM32F303xx LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 7. STM32F302xx/STM32F303xx LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 8. STM32F30xB/C memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 9. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 10. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 11. Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 12. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 13. Typical VBAT current consumption (LSE and RTC ON/LSEDRV[1:0] = ’00’) . . . . . . . . . . . 66
Figure 14. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Figure 15. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Figure 16. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Figure 17. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Figure 18. HSI oscillator accuracy characterization results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Figure 19. TC and TTa I/O input characteristics - CMOS port . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Figure 20. TC and TTa I/O input characteristics - TTL port . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Figure 21. Five volt tolerant (FT and FTf) I/O input characteristics - CMOS port. . . . . . . . . . . . . . . . . 88
Figure 22. Five volt tolerant (FT and FTf) I/O input characteristics - TTL port . . . . . . . . . . . . . . . . . . . 89
Figure 23. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Figure 24. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Figure 25. I2C bus AC waveforms and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Figure 26. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Figure 27. SPI timing diagram - slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Figure 28. SPI timing diagram - master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Figure 29. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Figure 30. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Figure 31. USB timings: definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Figure 32. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Figure 33. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Figure 34. 12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Figure 35. LQFP100 – 14 x 14 mm, 100-pin low-profile quad flat package outline . . . . . . . . . . . . . . 120
Figure 36. Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 37. LQFP64 – 10 x 10 mm, 64 pin low-profile quad flat package outline . . . . . . . . . . . . . . . . 122
Figure 38. Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 39. LQFP48 – 7 x 7 mm, 48-pin low-profile quad flat package outline . . . . . . . . . . . . . . . . . . 124
Figure 40. Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125

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Introduction STM32F302xx/STM32F303xx

1 Introduction

This datasheet provides the ordering information and mechanical device characteristics of
the STM32F30xB/C microcontrollers.
This STM32F30xB/C datasheet should be read in conjunction with the STM32F30xB/C
reference manual. The reference manual is available from the STMicroelectronics website
www.st.com.
For information on the Cortex™-M4F core please refer to:
● Cortex™-M4F Technical Reference Manual, available from the www.arm.com
website at the following address:
http://infocenter.arm.com/help/index.jsp?topic=/com.arm.doc.subset.cortexm.m4/
index.html
● STM32F3xxx and STM32F4xxx Cortex-M4 programming manual (PM0214)
available from the www.st.com website at the following address:
http://www.st.com/internet/com/TECHNICAL_RESOURCES/
TECHNICAL_LITERATURE/PROGRAMMING_MANUAL/DM00046982.pdf

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STM32F302xx/STM32F303xx Description

2 Description

The STM32F302xx/STM32F303xx family is based on the high-performance ARM®

Cortex™-M4F 32-bit RISC core operating at a frequency of up to 72 MHz, and embedding a
floating point unit (FPU), a memory protection unit (MPU) and an embedded trace macrocell
(ETM). The family incorporates high-speed embedded memories (up to 256 Kbytes of Flash
memory, up to 48 Kbytes of SRAM) and an extensive range of enhanced I/Os and
peripherals connected to two APB buses.
The devices offer up to four fast 12-bit ADCs (5 Msps), up to seven comparators, up to four
operational amplifiers, up to two DAC channels, a low-power RTC, up to five general-
purpose 16-bit timers, one general-purpose 32-bit timer, and two timers dedicated to motor
control. They also feature standard and advanced communication interfaces: up to two I2Cs,
up to three SPIs (two SPIs are with multiplexed full-duplex I2Ss on
STM32F303xB/STM32F303xC devices), three USARTs, up to two UARTs, CAN and USB.
To achieve audio class accuracy, the I2S peripherals can be clocked via an external PLL.
The STM32F302xx/STM32F303xx family operates in the -40 to +85 °C and -40 to +105 °C
temperature ranges from a 2.0 to 3.6 V power supply. A comprehensive set of power-saving
mode allows the design of low-power applications.
The STM32F302xx/STM32F303xx family offers devices in three packages ranging from 48
pins to 100 pins.
The set of included peripherals changes with the device chosen.

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Description STM32F302xx/STM32F303xx

Table 2. STM32F30xB/C family device features and peripheral counts

STM32F STM32F STM32F STM32F STM32F STM32F
Peripheral
302Cx 302Rx 302Vx 303Cx 303Rx 303Vx

Flash (Kbytes) 128 256 128 256 128 256 128 256 128 256 128 256
SRAM (Kbytes) on
24 32 24 32 24 32 32 40 32 40 32 40
data bus
SRAM (Kbytes) on
instruction bus (CCM: 8
core coupled memory)
Advanced
1 (16-bit) 2 (16-bit)
control
Timers General 5 (16-bit)
purpose 1 (32-bit)
Basic 1 (16-bit) 2 (16-bit)
SPI(I2S)(1) 3 3(2)
I2C 2
Comm.
USART 3
interfaces
UART 0 2 0 2
CAN 1
USB 1
Normal
I/Os 20 27 45 20 27 45
(TC, TTa)
GPIOs 5 volts
Tolerant
17 25 42 17 25 42
I/Os
(FT, FTf)
DMA channels 12
Capacitive sensing
17 18 24 17 18 24
channels
12-bit ADCs 2 4
12-bit DAC channels 1 2
Analog comparator 4 7
Operational amplifiers 2 4
CPU frequency 72 MHz
Operating voltage 2.0 to 3.6 V
Operating Ambient operating temperature: - 40 to 85 °C / - 40 to 105 °C
temperature Junction temperature: - 40 to 125 °C
Packages LQFP48 LQFP64 LQFP100 LQFP48 LQFP64 LQFP100
1. In STM32F303xB/STM32F303xC devices the SPI interfaces can work in an exclusive way in either the SPI mode or the I2S
audio mode.

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STM32F302xx/STM32F303xx Description

Figure 1. STM32F302xB/STM32F302xC block diagram

Power
TPIU ETM VDD18 VDDIO = 2 to 3.6 V
TRADECLK SWJTAG Trace/Trig Voltage reg. VSS
TRACED[0-3] 3.3 V to 1.8V

OBL
as AF MPU/FPU

interface
@VDDIO

Flash
JTRST FLASH 256 KB
Ibus
JTDI 64 bits POR Supply
JTCK/SWCLK Cortex M4 CPU Supervision
JTMS/SWDIO Dbus Reset NRESET
JTDO Fmax: 72 MHz CCM RAM Int. POR /PDR VDDA
As AF 8KB VSSA

BusMatrix
System PVD
SRAM
NVIC
40 KB @VDDA @VDDA

GP DMA1 RC HS 8MHz @VDDIO

7 channels RC LS
XTAL OSC OSC_IN
GP DMA2 PLL
4 -32 MHz OSC_OUT
5 channels
Ind. WDG32K
Temp. sensor AHBPCLK Standby
APBP1CLK interface
12-bit ADC1 VBAT = 1.65V to 3.6V
VREF+ IF APBP2CLK
VREF- 12-bit ADC2 HCLK @VSW
Reset &
clock FCLK XTAL 32kHz OSC32_IN
control OSC32_OUT
USARTCLK Backup
RTC Reg ANTI-TAMP
I2CCLK AWU (64Byte)
ADC SAR
Backup
1/2/3/4 CLK
interface
AHB decoder

CRC TIMER2
PA[15:0] GPIO PORT A (32-bit/PWM) 4 Channels, ETR as AF

PB[15:0] GPIO PORT B TIMER 3 4 Channels, ETR as AF

PC[15:0] GPIO PORT C TIMER 4 4 Channels, ETR as AF

APB1 Fmax = 36 MHz

PD[15:0] GPIO PORT D

MOSI, MISO,
SPI2 SCK, NSS as AF
PE[15:0] GPIO PORT E
SPI3 MOSI, MISO,
GPIO PORT F SCK, NSS as AF
PF[7:0]
USART2 RX, TX, CTS, RTS, as AF

USART3 RX, TX, CTS, RTS, as AF

XX Groups of Touch Sensing
4 channels as AF Controller
UART4 RX, TX as AF

AHB2 AHB2
UART5 RX, TX as AF
APB2 APB1

I2C1 SCL, SDA, SMBA as AF

EXT.IT
XX AF I2C2 SCL, SDA, SMBA as AF
WKUP
WinWATCHDOG
bx CAN &
2 Channels,1 Comp 512B SRAM CAN TX, CAN RX
Channel, BRK as AF TIMER 15 USB SRAM 512B
APB2 fmax = 72 MHz

USB 2.0 FS USB_DP, USB_DM

1 Channel, 1 Comp TIMER 16
Channel, BRK as AF
1 Channel, 1 Comp TIMER6 IF 12bit DAC1
TIMER 17 DAC1_CH1 as AF
Channel, BRK as AF
@VDDA
4 Channels, SYSCFG CTL
INTERFACE

TIMER 1 / PWM
4 Comp channels, OpAmp1 INxx / OUTxx
ETR, BRK as AF
@VDDA OpAmp2 INxx / OUTxx
MOSI, MISO, SPI1
SCK,NSS as AF GP Comparator 6
GP Comparator 4 @VDDA
RX, TX, CTS, RTS, USART1
GP Comparator 2
SmartCard as AF
GP Comparator 1

Xx Ins, 4 OUTs as AF MS18959V5

1. AF: alternate function on I/O pins.

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Description STM32F302xx/STM32F303xx

Figure 2. STM32F303xB/STM32F303xC block diagram

Power
TPIU ETM VDD18 VDDIO = 2 to 3.6 V
TRADECLK SWJTAG Trace/Trig Voltage reg. VSS
TRACED[0-3] 3.3 V to 1.8V

OBL
as AF MPU/FPU

interface
@VDDIO

Flash
JTRST FLASH 256 KB
Ibus
JTDI 64 bits POR Supply
JTCK/SWCLK Cortex M4 CPU Supervision
JTMS/SWDIO Dbus Reset NRESET
JTDO Fmax: 72 MHz CCM RAM Int. POR /PDR VDDA
As AF 8KB VSSA

BusMatrix
System PVD
SRAM
NVIC
40 KB @VDDA @VDDA

GP DMA1 RC HS 8MHz @VDDIO

7 channels RC LS
XTAL OSC OSC_IN
GP DMA2 PLL
4 -32 MHz OSC_OUT
5 channels
Ind. WDG32K
Temp. sensor AHBPCLK Standby
APBP1CLK interface
12-bit ADC1 VBAT = 1.65V to 3.6V
IF APBP2CLK
VREF+ 12-bit ADC2 HCLK @VSW
Reset &
VREF- clock OSC32_IN
AHB3

FCLK XTAL 32kHz

control OSC32_OUT
USARTCLK Backup
12-bit ADC3 RTC Reg ANTI-TAMP
IF I2CCLK AWU (64Byte)
12-bit ADC4 ADC SAR
Backup
1/2/3/4 CLK
interface

CRC TIMER2
PA[15:0] GPIO PORT A (32-bit/PWM) 4 Channels, ETR as AF

PB[15:0] GPIO PORT B TIMER 3 4 Channels, ETR as AF

PC[15:0] GPIO PORT C TIMER 4

AHB2

4 Channels, ETR as AF

PD[15:0] GPIO PORT D

MOSI/SD, MISO/ext_SD,
SPI2/I2S
APB1 Fmax = 36 MHz

SCK/CK, NSS/WS, MCLK as AF

PE[15:0] GPIO PORT E
SPI3/I2S MOSI/SD, MISO/ext_SD,
SCK/CK, NSS/WS, MCLK as AF
PF[7:0] GPIO PORT F
USART2 RX, TX, CTS, RTS, as AF

USART3 RX, TX, CTS, RTS, as AF

XX Groups of Touch Sensing
4 channels as AF Controller
UART4 RX, TX as AF

AHB2 AHB2
UART5 RX, TX as AF
APB2 APB1

I2C1 SCL, SDA, SMBA as AF

I2C2 SCL, SDA, SMBA as AF

WinWATCHDOG
bx CAN &
EXT.IT 512B SRAM CAN TX, CAN RX
XX AF
WKUP USB SRAM 512B
USB 2.0 FS USB_DP, USB_DM
2 Channels,1 Comp
Channel, BRK as AF TIMER 15
TIMER6
DAC1_CH1 as AF
1 Channel, 1 Comp TIMER 16 IF 12bit DAC1
APB2 fmax = 72 MHz

Channel, BRK as AF TIMER7

DAC1_CH2 as AF
1 Channel, 1 Comp @VDDA
TIMER 17
Channel, BRK as AF

4 Channels,
4 Comp channels, TIMER 1 / PWM
OpAmp1 INxx / OUTxx
INTERFACE

ETR, BRK as AF
4 Channels, OpAmp2 INxx / OUTxx
TIMER 8 / PWM
4 Comp channels,
ETR, BRK as AF SYSCFG CTL OpAmp3 INxx / OUTxx

OpAmp4 INxx / OUTxx

MOSI, MISO, SPI1 @VDDA
SCK,NSS as AF
@VDDA
GP Comparator
p 7
RX, TX, CTS, RTS,
USART1 GP Comparator...
SmartCard as AF GP Comparator 1

MS18960V4
Xx Ins, 7 OUTs as AF

1. AF: alternate function on I/O pins.

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STM32F302xx/STM32F303xx Functional overview

3 Functional overview

3.1 ARM® Cortex™-M4F core with embedded Flash and SRAM

The ARM Cortex-M4F processor is the latest generation of ARM processors for embedded
systems. It was developed to provide a low-cost platform that meets the needs of MCU
implementation, with a reduced pin count and low-power consumption, while delivering
outstanding computational performance and an advanced response to interrupts.
The ARM Cortex-M4F 32-bit RISC processor features exceptional code-efficiency,
delivering the high-performance expected from an ARM core in the memory size usually
associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allow efficient signal processing
and complex algorithm execution.
Its single precision FPU speeds up software development by using metalanguage
development tools, while avoiding saturation.
With its embedded ARM core, the STM32F302xx/STM32F303xx family is compatible with
all ARM tools and software.
Figure 1 and Figure 2 show the general block diagrams of the
STM32F302xx/STM32F303xx family devices.

3.2 Memory protection unit (MPU)

The memory protection unit (MPU) is used to separate the processing of tasks from the data
protection. The MPU can manage up to 8 protection areas that can all be further divided up
into 8 subareas. The protection area sizes are between 32 bytes and the whole 4 gigabytes
of addressable memory.
The memory protection unit is especially helpful for applications where some critical or
certified code has to be protected against the misbehavior of other tasks. It is usually
managed by an RTOS (real-time operating system). If a program accesses a memory
location that is prohibited by the MPU, the RTOS can detect it and take action. In an RTOS
environment, the kernel can dynamically update the MPU area setting, based on the
process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.

3.3 Embedded Flash memory

All STM32F302xx/STM32F303xx devices feature up to 256 Kbytes of embedded Flash
memory available for storing programs and data. The Flash memory access time is adjusted
to the CPU clock frequency (0 wait state from 0 to 24 MHz, 1 wait state from 24 to 48 MHz
and 2 wait states above).

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Functional overview STM32F302xx/STM32F303xx

3.4 Embedded SRAM

STM32F302xx/STM32F303xx devices feature up to 48 Kbytes of embedded SRAM with
hardware parity check. The memory can be accessed in read/write at CPU clock speed with
0 wait states, allowing the CPU to achieve 90 Dhrystone Mips at 72 MHz (when running
code from CCM, core coupled memory).
● 8 Kbytes of SRAM mapped on the instruction bus (Core Coupled Memory (CCM)),
used to execute critical routines or to access data (parity check on all of CCM RAM).
● 40 Kbytes of SRAM mapped on the data bus (parity check on first 16 Kbytes of SRAM).

3.5 Boot modes

At startup, Boot0 pin and Boot1 option bit are used to select one of three boot options:
● Boot from user Flash
● Boot from system memory
● Boot from embedded SRAM
The boot loader is located in system memory. It is used to reprogram the Flash memory by
using USART1 (PA9/PA10), USART2 (PD5/PD6) or USB (PA11/PA12) through DFU (device
firmware upgrade) .

3.6 Cyclic redundancy check (CRC)

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at
linktime and stored at a given memory location.

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STM32F302xx/STM32F303xx Functional overview

3.7 Power management

3.7.1 Power supply schemes

● VSS, VDD = 2.0 to 3.6 V: external power supply for I/Os and the internal regulator. It is
provided externally through VDD pins
● VSSA, VDDA = 2.0 to 3.6 V: external analog power supply for ADC, DACs, comparators
operational amplifiers, reset blocks, RCs and PLL (minimum voltage to be applied to
VDDA is 2.4 V when the DACs and operational amplifiers are used). The VDDA voltage
level must be always greater or equal to the VDD voltage level and must be provided
first.
● VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and backup
registers (through power switch) when VDD is not present.

3.7.2 Power supply supervisor

The device has an integrated power-on reset (POR) and power-down reset (PDR) circuits.
They are always active, and ensure proper operation above a threshold of 2 V. The device
remains in reset mode when the monitored supply voltage is below a specified threshold,
VPOR/PDR, without the need for an external reset circuit.
● The POR monitors only the VDD supply voltage. During the startup phase it is required
that VDDA should arrive first and be greater than or equal to VDD.
● The PDR monitors both the VDD and VDDA supply voltages, however the VDDA power
supply supervisor can be disabled (by programming a dedicated Option bit) to reduce
the power consumption if the application design ensures that VDDA is higher than or
equal to VDD.
The device features an embedded programmable voltage detector (PVD) that monitors the
VDD power supply and compares it to the VPVD threshold. An interrupt can be generated
when VDD drops below the VPVD threshold and/or when VDD is higher than the VPVD
threshold. The interrupt service routine can then generate a warning message and/or put
the MCU into a safe state. The PVD is enabled by software.

3.7.3 Voltage regulator

The regulator has three operation modes: main (MR), low power (LPR), and power-down.
● The MR mode is used in the nominal regulation mode (Run)
● The LPR mode is used in Stop mode.
● The power-down mode is used in Standby mode: the regulator output is in high
impedance, and the kernel circuitry is powered down thus inducing zero consumption.
The voltage regulator is always enabled after reset. It is disabled in Standby mode.

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3.7.4 Low-power modes

The STM32F302xx/STM32F303xx supports three low power modes to achieve the best
compromise between low power consumption, short startup time and available wakeup
sources:
● Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
● Stop mode
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the 1.8 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low-power mode.
The device can be woken up from Stop mode by any of the EXTI line. The EXTI line
source can be one of the 16 external lines, the PVD output, the USB wakeup on
STM32F303xB/STM32F303xC devices, the RTC alarm, COMPx, I2Cx or U(S)ARTx.
● Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.8 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, SRAM and register contents are lost except for registers in the Backup
domain and Standby circuitry.
The device exits Standby mode when an external reset (NRST pin), an IWDG reset, a
rising edge on the WKUP pin or an RTC alarm occurs.
Note: The RTC, the IWDG and the corresponding clock sources are not stopped by entering Stop
or Standby mode.

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3.8 Clocks and startup

System clock selection is performed on startup, however the internal RC 8 MHz oscillator is
selected as default CPU clock on reset. An external 4-32 MHz clock can be selected, in
which case it is monitored for failure. If failure is detected, the system automatically switches
back to the internal RC oscillator. A software interrupt is generated if enabled. Similarly, full
interrupt management of the PLL clock entry is available when necessary (for example with
failure of an indirectly used external oscillator).
Several prescalers allow to configure the AHB frequency, the high speed APB (APB2) and
the low speed APB (APB1) domains. The maximum frequency of the AHB and the high
speed APB domains is 72 MHz, while the maximum allowed frequency of the low speed
APB domain is 36 MHz.

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Figure 3. Clock tree

FLITFCLK
to Flash programming interface

HSI

SYSCLK to I2Cx (x = 1,2)

I2SSRC

SYSCLK
to I2Sx (x = 2,3)
I2S_CKIN Ext. clock

USB
prescaler USBCLK
8 MHz HSI /1,1.5 to USB interface
HSI RC
/2
HCLK to AHB bus, core,
memory and DMA
PLLSRC SW /8 to cortex System timer
PLLMUL
HSI FHCLK Cortex free
PLL PLLCLK AHB
AHB APB1 running clock
PCLK1
x2,x3,.. prescaler prescaler to APB1 peripherals
x16 /1,2,..512 /1,2,4,8,16
HSE
SYSCLK
CSS If (APB1 prescaler to TIM 2,3,4,6,7
/2,/3,...
=1) x1 else x2
/16
PCLK1
OSC_OUT SYSCLK to U(S)ARTx (x = 2..5)
4-32 MHz HSI
HSE OSC LSE
OSC_IN
APB2
PCLK2
prescaler to APB2 peripherals
/32 /1,2,4,8,16
OSC32_IN RTCCLK to RTC
LSE OSC
32.768kHz LSE If (APB2 prescaler to TIM 15,16,17
OSC32_OUT =1) x1 else x2
RTCSEL[1:0]
PCLK2
LSI RC LSI IWDGCLK SYSCLK to USART1
40kHz to IWDG HSI
/2 PLLCLK LSE
Main clock
HSI
MCO output
LSI
HSE x2 TIM1/8
SYSCLK
MCO
ADC
Prescaler
/1,2,4 to ADCxy
(xy = 12, 34)
ADC
Prescaler
/1,2,4,6,8,10,12,16,
32,64,128,256

MS19989V4

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3.9 General-purpose input/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. All GPIOs are high current
capable except for analog inputs.
The I/Os alternate function configuration can be locked if needed following a specific
sequence in order to avoid spurious writing to the I/Os registers.

3.10 Direct memory access (DMA)

The flexible general-purpose DMA is able to manage memory-to-memory, peripheral-to-
memory and memory-to-peripheral transfers. The DMA controller supports circular buffer
management, avoiding the generation of interrupts when the controller reaches the end of
the buffer.
Each of the 12 DMA channels is connected to dedicated hardware DMA requests, with
software trigger support for each channel. Configuration is done by software and transfer
sizes between source and destination are independent.
The DMA can be used with the main peripherals: SPI, I2C, USART, general-purpose timers,
DAC and ADC.

3.11 Interrupts and events

3.11.1 Nested vectored interrupt controller (NVIC)

The STM32F302xx/STM32F303xx devices embed a nested vectored interrupt controller
(NVIC) able to handle up to 66 maskable interrupt channels and 16 priority levels.
The NVIC benefits are the following:
● Closely coupled NVIC gives low latency interrupt processing
● Interrupt entry vector table address passed directly to the core
● Closely coupled NVIC core interface
● Allows early processing of interrupts
● Processing of late arriving higher priority interrupts
● Support for tail chaining
● Processor state automatically saved
● Interrupt entry restored on interrupt exit with no instruction overhead
The NVIC hardware block provides flexible interrupt management features with minimal
interrupt latency.

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3.12 Fast analog-to-digital converter (ADC)

Up to four fast analog-to-digital converters 5 MSPS, with selectable resolution between 12
and 6 bit, are embedded in the STM32F302xx/STM32F303xx family devices. The ADCs
have up to 39 external channels. Some of the external channels are shared between
ADC1&2 and between ADC3&4, performing conversions in single-shot or scan modes. In
scan mode, automatic conversion is performed on a selected group of analog inputs.
The ADCs have also internal channels: Temperature sensor connected to ADC1 channel
16, VBAT/2 connected to ADC1 channel 17, Voltage reference VREFINT connected to the 4
ADCs channel 18, VOPAMP1 connected to ADC1 channel 15, VOPAMP2 connected to
ADC2 channel 17, VOPAMP3 connected to ADC3 channel 17, VOPAMP4 connected to
ADC4 channel 17.
Additional logic functions embedded in the ADC interface allow:
● Simultaneous sample and hold
● Interleaved sample and hold
● Single-shunt phase current reading techniques.
The ADC can be served by the DMA controller.
An analog watchdog feature allows very precise monitoring of the converted voltage of one,
some or all selected channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
The events generated by the general-purpose timers and the advanced-control timers (TIM1
on all devices and TIM8 on STM32F303xB/STM32F303xC devices) can be internally
connected to the ADC start trigger and injection trigger, respectively, to allow the application
to synchronize A/D conversion and timers.

3.12.1 Temperature sensor

The temperature sensor (TS) generates a voltage VSENSE that varies linearly with
temperature.
The temperature sensor is internally connected to the ADC_IN16 input channel which is
used to convert the sensor output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall accuracy
of the temperature measurement. As the offset of the temperature sensor varies from chip
to chip due to process variation, the uncalibrated internal temperature sensor is suitable for
applications that detect temperature changes only.
To improve the accuracy of the temperature sensor measurement, each device is
individually factory-calibrated by ST. The temperature sensor factory calibration data are
stored by ST in the system memory area, accessible in read-only mode.

3.12.2 Internal voltage reference (VREFINT)

The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for the
ADC and Comparators. VREFINT is internally connected to the ADC_IN18 input channel. The
precise voltage of VREFINT is individually measured for each part by ST during production
test and stored in the system memory area. It is accessible in read-only mode.

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3.12.3 VBAT battery voltage monitoring

This embedded hardware feature allows the application to measure the VBAT battery voltage
using the internal ADC channel ADC_IN17. As the VBAT voltage may be higher than VDDA,
and thus outside the ADC input range, the VBAT pin is internally connected to a bridge
divider by 2. As a consequence, the converted digital value is half the VBAT voltage.

3.12.4 OPAMP reference voltage (VOPAMP)

Every OPAMP reference voltage can be measured using a corresponding ADC internal
channel: VOPAMP1 connected to ADC1 channel 15, VOPAMP2 connected to ADC2
channel 17, VOPAMP3 connected to ADC3 channel 17, VOPAMP4 connected to ADC4
channel 17.

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3.13 Digital-to-analog converter (DAC)

Up to two 12-bit buffered DAC channels can be used to convert digital signals into analog
voltage signal outputs. The chosen design structure is composed of integrated resistor
strings and an amplifier in inverting configuration.
This digital interface supports the following features:
● Up to two DAC output channels on STM32F303xB/STM32F303xC devices
● 8-bit or 10-bit monotonic output
● Left or right data alignment in 12-bit mode
● Synchronized update capability on STM32F303xB/STM32F303xC devices
● Noise-wave generation
● Triangular-wave generation
● Dual DAC channel independent or simultaneous conversions on
STM32F303xB/STM32F303xC devices
● DMA capability (for each channel on STM32F303xB/STM32F303xC devices)
● External triggers for conversion

3.14 Operational amplifier (OPAMP)

The STM32F302xx/STM32F303xx embeds up to four operational amplifiers with external or
internal follower routing and PGA capability (or even amplifier and filter capability with
external components). When an operational amplifier is selected, an external ADC channel
is used to enable output measurement.
The operational amplifier features:
● 8.2 MHz bandwidth
● 0.5 mA output capability
● Rail-to-rail input/output
● In PGA mode, the gain can be programmed to be 2, 4, 8 or 16.

3.15 Fast comparators (COMP)

The STM32F302xx/STM32F303xx devices embed seven fast rail-to-rail comparators with
programmable reference voltage (internal or external), hysteresis and speed (low speed for
low power) and with selectable output polarity.
The reference voltage can be one of the following:
● External I/O
● DAC output pin
● Internal reference voltage or submultiple (1/4, 1/2, 3/4). Refer to Table 26: Embedded
internal reference voltage on page 60 for the value and precision of the internal
reference voltage.
All comparators can wake up from STOP mode, generate interrupts and breaks for the
timers and can be also combined per pair into a window comparator

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3.16 Timers and watchdogs

The STM32F302xx/STM32F303xx includes up to two advanced control timers, up to 6
general-purpose timers, two basic timers, two watchdog timers and a SysTick timer. The
table below compares the features of the advanced control, general purpose and basic
timers.

Table 3. Timer feature comparison

DMA Capture/
Counter Counter Prescaler Complementary
Timer type Timer request compare
resolution type factor outputs
generation Channels

TIM1,
TIM8
Any integer
(on Up, Down,
Advanced 16-bit between 1 Yes 4 Yes
STM32F303xB Up/Down
and 65536
/STM32F303x
C devices only)
Any integer
General- Up, Down,
TIM2 32-bit between 1 Yes 4 No
purpose Up/Down
and 65536
Any integer
General- Up, Down,
TIM3, TIM4 16-bit between 1 Yes 4 No
purpose Up/Down
and 65536
Any integer
General-
TIM15 16-bit Up between 1 Yes 2 1
purpose
and 65536
Any integer
General-
TIM16, TIM17 16-bit Up between 1 Yes 1 1
purpose
and 65536
TIM6,
TIM7
Any integer
(on
Basic 16-bit Up between 1 Yes 0 No
STM32F303xB
and 65536
/STM32F303x
C devices only)

3.16.1 Advanced timers (TIM1, TIM8)

The advanced-control timers (TIM1 on all devices and TIM8 on
STM32F303xB/STM32F303xC devices) can each be seen as a three-phase PWM
multiplexed on 6 channels. They have complementary PWM outputs with programmable
inserted dead-times. They can also be seen as complete general-purpose timers. The 4
independent channels can be used for:
● Input capture
● Output compare
● PWM generation (edge or center-aligned modes) with full modulation capability (0-
100%)
● One-pulse mode output

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In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIM timers (described in
Section 3.16.2 using the same architecture, so the advanced-control timers can work
together with the TIM timers via the Timer Link feature for synchronization or event chaining.

3.16.2 General-purpose timers (TIM2, TIM3, TIM4, TIM15, TIM16, TIM17)

There are up to six synchronizable general-purpose timers embedded in the
STM32F302xx/STM32F303xx (see Table 3 for differences). Each general-purpose timer
can be used to generate PWM outputs, or act as a simple time base.
● TIM2, 3, and TIM4
These are full-featured general-purpose timers:
– TIM2 has a 32-bit auto-reload up/downcounter and 32-bit prescaler
– TIM3 and 4 have 16-bit auto-reload up/downcounters and 16-bit prescalers.
These timers all feature 4 independent channels for input capture/output compare,
PWM or one-pulse mode output. They can work together, or with the other general-
purpose timers via the Timer Link feature for synchronization or event chaining.
The counters can be frozen in debug mode.
All have independent DMA request generation and support quadrature encoders.
● TIM15, 16 and 17
These three timers general-purpose timers with mid-range features:
They have 16-bit auto-reload upcounters and 16-bit prescalers.
– TIM15 has 2 channels and 1 complementary channel
– TIM16 and TIM17 have 1 channel and 1 complementary channel
All channels can be used for input capture/output compare, PWM or one-pulse mode
output.
The timers can work together via the Timer Link feature for synchronization or event
chaining. The timers have independent DMA request generation.
The counters can be frozen in debug mode.

3.16.3 Basic timers (TIM6, TIM7)

These timers are mainly used for DAC trigger generation. They can also be used as a
generic 16-bit time base.

3.16.4 Independent watchdog (IWDG)

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 40 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free running timer for application timeout
management. It is hardware or software configurable through the option bytes. The counter
can be frozen in debug mode.

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3.16.5 Window watchdog (WWDG)

The window watchdog is based on a 7-bit downcounter that can be set as free running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from the
main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.

3.16.6 SysTick timer

This timer is dedicated to real-time operating systems, but could also be used as a standard
down counter. It features:
● A 24-bit down counter
● Autoreload capability
● Maskable system interrupt generation when the counter reaches 0.
● Programmable clock source

3.17 Real-time clock (RTC) and backup registers

The RTC and the 16 backup registers are supplied through a switch that takes power from
either the VDD supply when present or the VBAT pin. The backup registers are sixteen 32-bit
registers used to store 64 bytes of user application data when VDD power is not present.
They are not reset by a system or power reset, or when the device wakes up from Standby
mode.
The RTC is an independent BCD timer/counter. It supports the following features:
● Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format.
● Automatic correction for 28, 29 (leap year), 30 and 31 days of the month.
● Two programmable alarms with wake up from Stop and Standby mode capability.
● On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock.
● Digital calibration circuit with 1 ppm resolution, to compensate for quartz crystal
inaccuracy.
● Three anti-tamper detection pins with programmable filter. The MCU can be woken up
from Stopand Standby modes on tamper event detection.
● Timestamp feature which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event. The MCU can be
woken up from Stop and Standby modes on timestamp event detection.
● 17-bit Auto-reload counter for periodic interrupt with wakeup from STOP/STANDBY
capability.
The RTC clock sources can be:
● A 32.768 kHz external crystal
● A resonator or oscillator
● The internal low-power RC oscillator (typical frequency of 40 kHz)
● The high-speed external clock divided by 32.

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3.18 Inter-integrated circuit interface (I2C)

Up to two I2C bus interfaces can operate in multimaster and slave modes. They can support
standard (up to 100 KHz), fast (up to 400 KHz) and fast mode + (up to 1 MHz) modes.
Both support 7-bit and 10-bit addressing modes, multiple 7-bit slave addresses
(2 addresses, 1 with configurable mask). They also include programmable analog and
digital noise filters.

Table 4. Comparison of I2C analog and digital filters

Analog filter Digital filter

Pulse width of Programmable length from 1 to 15

≥ 50 ns
suppressed spikes I2C peripheral clocks
1. Extra filtering capability vs.
Benefits Available in Stop mode standard requirements.
2. Stable length

Variations depending on Disabled when Wakeup from Stop

Drawbacks
temperature, voltage, process mode is enabled

In addition, they provide hardware support for SMBUS 2.0 and PMBUS 1.1: ARP capability,
Host notify protocol, hardware CRC (PEC) generation/verification, timeouts verifications and
ALERT protocol management. They also have a clock domain independent from the CPU
clock, allowing the I2Cx (x=1,2) to wake up the MCU from Stop mode on address match.
The I2C interfaces can be served by the DMA controller.
Refer to Table 5 for the features available in I2C1 and I2C2.

Table 5. STM32F30xB/C I2C implementation

I2C features(1) I2C1 I2C2

7-bit addressing mode X X

10-bit addressing mode X X
Standard mode (up to 100 kbit/s) X X
Fast mode (up to 400 kbit/s) X X
Fast Mode Plus with 20mA output drive I/Os (up to 1 Mbit/s) X X
Independent clock X X
SMBus X X
Wakeup from STOP X X
1. X = supported.

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3.19 Universal synchronous/asynchronous receiver transmitter

(USART)
The STM32F302xx/STM32F303xx devices have three embedded universal
synchronous/asynchronous receiver transmitters (USART1, USART2 and USART3).
The USART interfaces are able to communicate at speeds of up to 9 Mbits/s.
They provide hardware management of the CTS and RTS signals, they support IrDA SIR
ENDEC, the multiprocessor communication mode, the single-wire half-duplex
communication mode and have LIN Master/Slave capability. The USART interfaces can be
served by the DMA controller.

3.20 Universal asynchronous receiver transmitter (UART)

The STM32F302xx/STM32F303xx devices have 2 embedded universal asynchronous
receiver transmitters (UART4, and UART5). The UART interfaces support IrDA SIR ENDEC,
multiprocessor communication mode and single-wire half-duplex communication mode. The
UART interfaces can be served by the DMA controller.
Refer to Table 6 for the features available in all U(S)ARTs interfaces

Table 6. USART features

USART modes/features(1) USART1 USART2 USART3 UART4 UART5

Hardware flow control for modem X X X

Continuous communication using DMA X X X X X
Multiprocessor communication X X X X X
Synchronous mode X X X
Smartcard mode X X X
Single-wire half-duplex communication X X X X X
IrDA SIR ENDEC block X X X X X
LIN mode X X X X X
Dual clock domain and wakeup from Stop mode X X X X X
Receiver timeout interrupt X X X X X
Modbus communication X X X X X
Auto baud rate detection X X X
Driver Enable X X X
1. X = supported.

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3.21 Serial peripheral interface (SPI)/Inter-integrated sound

interfaces (I2S)
Up to three SPIs are able to communicate up to 18 Mbits/s in slave and master modes in
full-duplex and half-duplex communication modes. The 3-bit prescaler gives 8 master mode
frequencies and the frame size is configurable from 4 bits to 16 bits.
Two standard I2S interfaces (multiplexed with SPI2 and SPI3) supporting four different audio
standards can operate as master or slave at half-duplex and full duplex communication
modes. They can be configured to transfer 16 and 24 or 32 bits with 16-bit or 32-bit data
resolution and synchronized by a specific signal. Audio sampling frequency from 8 kHz up to
192 kHz can be set by 8-bit programmable linear prescaler. When operating in master mode
it can output a clock for an external audio component at 256 times the sampling frequency.
Refer to Table 7 for the features available in SPI1, SPI2 and SPI3.

Table 7. STM32F30xB/C SPI/I2S implementation

SPI features(1) SPI1 SPI2 SPI3

Hardware CRC calculation X X X

Rx/Tx FIFO X X X
NSS pulse mode X X X
I2S mode X X
TI mode X X X
1. X = supported.

3.22 Controller area network (CAN)

The CAN is compliant with specifications 2.0A and B (active) with a bit rate up to 1 Mbit/s. It
can receive and transmit standard frames with 11-bit identifiers as well as extended frames
with 29-bit identifiers. It has three transmit mailboxes, two receive FIFOs with 3 stages and
14 scalable filter banks.

3.23 Universal serial bus (USB)

The STM32F302xx/STM32F303xx devices embed an USB device peripheral compatible
with the USB full-speed 12 Mbs. The USB interface implements a full-speed (12 Mbit/s)
function interface. It has software-configurable endpoint setting and suspend/resume
support. The dedicated 48 MHz clock is generated from the internal main PLL (the clock
source must use a HSE crystal oscillator). The USB has a dedicated 512-bytes SRAM
memory for data transmission and reception.

3.24 Infrared Transmitter

The STM32F302xx/STM32F303xx devices provide an infrared transmitter solution. The
solution is based on internal connections between TIM16 and TIM17 as shown in the figure
below.

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TIM17 is used to provide the carrier frequency and TIM16 provides the main signal to be
sent. The infrared output signal is available on PB9 or PA13.
To generate the infrared remote control signals, TIM16 channel 1 and TIM17 channel 1 must
be properly configured to generate correct waveforms. All standard IR pulse modulation
modes can be obtained by programming the two timers output compare channels.

Figure 4. Infrared transmitter

TIMER 16 OC

(for envelop) PB9/PA13

TIMER 17 OC

(for carrier)
MS30365V1

3.25 Touch sensing controller (TSC)

The STM32F302xx/STM32F303xx devices provide a simple solution for adding capacitive
sensing functionality to any application. These devices offer up to 24 capacitive sensing
channels distributed over 8 analog I/O groups.
Capacitive sensing technology is able to detect the presence of a finger near a sensor which
is protected from direct touch by a dielectric (glass, plastic, ...). The capacitive variation
introduced by the finger (or any conductive object) is measured using a proven
implementation based on a surface charge transfer acquisition principle. It consists of
charging the sensor capacitance and then transferring a part of the accumulated charges
into a sampling capacitor until the voltage across this capacitor has reached a specific
threshold. To limit the CPU bandwidth usage this acquisition is directly managed by the
hardware touch sensing controller and only requires few external components to operate.

Table 8. Capacitive sensing GPIOs available on STM32F302xx/STM32F303xx

devices
Capacitive sensing Pin Capacitive sensing Pin
Group Group
signal name name signal name name

TSC_G1_IO1 PA0 TSC_G5_IO1 PB3

TSC_G1_IO2 PA1 TSC_G5_IO2 PB4
1 5
TSC_G1_IO3 PA2 TSC_G5_IO3 PB6
TSC_G1_IO4 PA3 TSC_G5_IO4 PB7
TSC_G2_IO1 PA4 TSC_G6_IO1 PB11
TSC_G2_IO2 PA5 TSC_G6_IO2 PB12
2 6
TSC_G2_IO3 PA6 TSC_G6_IO3 PB13
TSC_G2_IO4 PA7 TSC_G6_IO4 PB14

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Table 8. Capacitive sensing GPIOs available on STM32F302xx/STM32F303xx

devices (continued)
Capacitive sensing Pin Capacitive sensing Pin
Group Group
signal name name signal name name

TSC_G3_IO1 PC5 TSC_G7_IO1 PE2

TSC_G3_IO2 PB0 TSC_G7_IO2 PE3
3 7
TSC_G3_IO3 PB1 TSC_G7_IO3 PE4
TSC_G3_IO4 PB2 TSC_G7_IO4 PE5
TSC_G4_IO1 PA9 TSC_G8_IO1 PD12
TSC_G4_IO2 PA10 TSC_G8_IO2 PD13
4 8
TSC_G4_IO3 PA13 TSC_G8_IO3 PD14
TSC_G4_IO4 PA14 TSC_G8_IO4 PD15

Table 9. No. of capacitive sensing channels available on

STM32F302xx/STM32F303xx devices
Number of capacitive sensing channels
Analog I/O group
STM32F30xVx STM32F30xRx STM32F30xCx

G1 3 3 3
G2 3 3 3
G3 3 3 2
G4 3 3 3
G5 3 3 3
G6 3 3 3
G7 3 0 0
G8 3 0 0
Number of capacitive
24 18 17
sensing channels

3.26 Development support

3.26.1 Serial wire JTAG debug port (SWJ-DP)

The ARM SWJ-DP Interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
The JTAG TMS and TCK pins are shared respectively with SWDIO and SWCLK and a
specific sequence on the TMS pin is used to switch between JTAG-DP and SW-DP.

3.26.2 Embedded trace macrocell™

The ARM embedded trace macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the

30/133 Doc ID 023353 Rev 5

STM32F302xx/STM32F303xx Functional overview

STM32F302xx/STM32F303xx through a small number of ETM pins to an external hardware

trace port analyzer (TPA) device. The TPA is connected to a host computer using a high-
speed channel. Real-time instruction and data flow activity can be recorded and then
formatted for display on the host computer running debugger software. TPA hardware is
commercially available from common development tool vendors. It operates with third party
debugger software tools.

Doc ID 023353 Rev 5 31/133

Pinouts and pin description STM32F302xx/STM32F303xx

4 Pinouts and pin description

Figure 5. STM32F302xx/STM32F303xx LQFP48 pinout

BOOT0
VDD_1
VSS_1

PA15
PA14
PB6
PB5
PB4
PB3
PB9
PB8

PB7
48 47 46 45 44 43 42 41 40 39 38 37
VBAT 1 36 VDD_3
PC13 2 35 VSS_3
PC14/OSC32_IN 3 34 PA13
PC15/OSC32_OUT 4 33 PA12
PF0/OSC_IN 5 32 PA11
PF1/OSC_OUT 6 31 PA10
NRST 7
,1&0 30 PA9
VSSA/VREF- 8 29 PA8
VDDA/VREF+ 9 28 PB15
PA0 10 27 PB14
PA1 11 26 PB13
PA2 12 25 PB12
13 14 15 16 17 18 19 20 21 22 23 24
PA4
PA5
PA3

PA7

PB2
PB10
PB0
PB1
PA6

PB11

VDD_2
VSS_2

.47

32/133 Doc ID 023353 Rev 5

STM32F302xx/STM32F303xx Pinouts and pin description

Figure 6. STM32F302xx/STM32F303xx LQFP64 pinout

BOOT0
VDD_1
VSS_1

PC12

PC10
PC11

PA15
PA14
PD2
PB9
PB8

PB7
PB6
PB5
PB4
PB3
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
VBAT 1 48 VDD_3
PC13 2 47 VSS_3
PC14/OSC32_IN 3 46 PA13
PC15/OSC32_OUT 4 45 PA12
PF0/OSC_IN 5 44 PA11
PF1/OSC_OUT 6 43 PA10
NRST 7 42 PA9
PC0 8 41 PA8
PC1 9 ,1&0 40 PC9
PC2 10 39 PC8
PC3 11 38 PC7
VSSA/VREF- 12 37 PC6
VDDA 13 36 PB15
PA0 14 35 PB14
PA1 15 34 PB13
PA2 16 33 PB12
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
PB11
PB10
VDD_4

PB2
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PF4

VDD_2
PA3

VSS_2

AI6

Doc ID 023353 Rev 5 33/133

Pinouts and pin description STM32F302xx/STM32F303xx

Figure 7. STM32F302xx/STM32F303xx LQFP100 pinout

"//4
633?
6$$?

0#
0#
0#
0!
0!
0$
0$
0$
0$
0$
0$
0$
0$
0%
0%
0"
0"

0"
0"
0"
0"
0"

























0%   6$$?
0%   633?
0%   0&
0%   0!
0%   0!
6"!4   0!
0#   0!
0#/3#?).   0!
0#/3#?/54   0!
0&   0#
0&   0#
0&/3#?).   0#
0&/3#?/54  ,1&0  0#
.234   0$
0#   0$
0#   0$
0#   0$
0#   0$
0&   0$
633!62%&   0$
62%&   0$
6$$!   0"
0!   0"
0!   0"
0!   0"

























6$$?
6$$?
0!

0!
0!
0!
0!
0#
0#

0%
0%
0%
0%
0%
0%
0"
0"
0"
0"
0"
0%
0%
0%

633?
0&

AI6

34/133 Doc ID 023353 Rev 5

STM32F302xx/STM32F303xx Pinouts and pin description

Table 10. Legend/abbreviations used in the pinout table

Name Abbreviation Definition

Unless otherwise specified in brackets below the pin name, the pin function
Pin name
during and after reset is the same as the actual pin name
S Supply pin
Pin type I Input only pin
I/O Input / output pin
FT 5 V tolerant I/O
FTf 5 V tolerant I/O, FM+ capable
TTa 3.3 V tolerant I/O directly connected to ADC
I/O structure
TC Standard 3.3V I/O
B Dedicated BOOT0 pin
RST Bidirectional reset pin with embedded weak pull-up resistor
Unless otherwise specified by a note, all I/Os are set as floating inputs during
Notes
and after reset
Alternate
Functions selected through GPIOx_AFR registers
functions
Pin
functions Additional
Functions directly selected/enabled through peripheral registers
functions

Doc ID 023353 Rev 5 35/133

Pinouts and pin description STM32F302xx/STM32F303xx

Table 11. STM32F302xx/STM32F303xx pin definitions

I/O structure
Pin number Pin functions
Pin name

Pin type

Notes
LQFP100

(function
LQFP64

LQFP48
after Alternate functions Additional functions
reset)

(1) TRACECK, TIM3_CH1,

1 PE2 I/O FT
TSC_G7_IO1
(1) TRACED0, TIM3_CH2,
2 PE3 I/O FT
TSC_G7_IO2
(1) TRACED1, TIM3_CH3,
3 PE4 I/O FT
TSC_G7_IO3
(1) TRACED2, TIM3_CH4,
4 PE5 I/O FT
TSC_G7_IO4
(1)
5 PE6 I/O FT TRACED3 WKUP3, RTC_TAMP3
6 1 1 VBAT S Backup power supply
WKUP2, RTC_TAMP1,
7 2 2 PC13(2) I/O TC TIM1_CH1N
RTC_TS, RTC_OUT
PC14(2)
8 3 3 OSC32_IN I/O TC OSC32_IN
(PC14)
PC15(2)
OSC32_
9 4 4 I/O TC OSC32_OUT
OUT
(PC15)
(1)
10 PF9 I/O FT TIM15_CH1, SPI2_SCK
(1)
11 PF10 I/O FT TIM15_CH2, SPI2_SCK
PF0-
12 5 5 OSC_IN I/O FTf TIM1_CH3N, I2C2_SDA OSC_IN
(PF0)
PF1-
13 6 6 OSC_OUT I/O FTf I2C2_SCL OSC_OUT
(PF1)
14 7 7 NRST I/O RST Device reset input / internal reset output (active low)
(1)
15 8 PC0 I/O TTa ADC12_IN6, COMP7_INM(3)
(1)
16 9 PC1 I/O TTa ADC12_IN7, COMP7_INP(3)
(1)
17 10 PC2 I/O TTa COMP7_OUT(3) ADC12_IN8
(1)
18 11 PC3 I/O TTa TIM1_BKIN2 ADC12_IN9
(1)
19 PF2 I/O TTa ADC12_IN10
VSSA/
20 12 8 S Analog ground/Negative reference voltage
VREF-
21 VREF+ S Positive reference voltage
22 VDDA S Analog power supply
VDDA/
13 9 S Analog power supply/Positive reference voltage
VREF+

36/133 Doc ID 023353 Rev 5

STM32F302xx/STM32F303xx Pinouts and pin description

Table 11. STM32F302xx/STM32F303xx pin definitions (continued)

I/O structure
Pin number Pin functions
Pin name

Pin type

Notes
LQFP100

(function
LQFP64

LQFP48
after Alternate functions Additional functions
reset)

USART2_CTS,
ADC1_IN1, COMP1_INM,
TIM2_CH1_ETR,
23 14 10 PA0 I/O TTa RTC_ TAMP2, WKUP1,
TIM8_BKIN(3), TIM8_ETR(3),
COMP7_INP(3)
TSC_G1_IO1, COMP1_OUT
ADC1_IN2, COMP1_INP,
USART2_RTS, TIM2_CH2,
24 15 11 PA1 I/O TTa OPAMP1_VINP,
TSC_G1_IO2, TIM15_CH1N
OPAMP3_VINP(3)
USART2_TX, TIM2_CH3,
ADC1_IN3, COMP2_INM,
25 16 12 PA2 I/O TTa TIM15_CH1, TSC_G1_IO3,
OPAMP1_VOUT
COMP2_OUT
ADC1_IN4, OPAMP1_VINP,
USART2_RX, TIM2_CH4,
26 17 13 PA3 I/O TTa COMP2_INP,
TIM15_CH2, TSC_G1_IO4
OPAMP1_VINM
(1)
27 18 PF4 I/O TTa COMP1_OUT ADC1_IN5
28 19 VDD_4 S
ADC2_IN1, DAC1_OUT1,
OPAMP4_VINP(3),
COMP1_INM, COMP2_INM,
SPI1_NSS, SPI3_NSS,
COMP3_INM(3),
29 20 14 PA4 I/O TTa I2S3_WS(3), USART2_CK,
COMP4_INM,
TSC_G2_IO1, TIM3_CH2
COMP5_INM(3),
COMP6_INM,
COMP7_INM(3)
ADC2_IN2, DAC1_OUT2(3)
OPAMP1_VINP,
OPAMP2_VINM,
OPAMP3_VINP(3),
SPI1_SCK, TIM2_CH1_ETR, COMP1_INM, COMP2_INM,
30 21 15 PA5 I/O TTa
TSC_G2_IO2 COMP3_INM(3),
COMP4_INM,
COMP5_INM(3),
COMP6_INM,
COMP7_INM(3)
SPI1_MISO, TIM3_CH1,
TIM8_BKIN(3), TIM1_BKIN,
31 22 16 PA6 I/O TTa ADC2_IN3, OPAMP2_VOUT
TIM16_CH1, COMP1_OUT,
TSC_G2_IO3
SPI1_MOSI, TIM3_CH2,
ADC2_IN4, COMP2_INP,
TIM17_CH1, TIM1_CH1N,
32 23 17 PA7 I/O TTa OPAMP2_VINP,
TIM8_CH1N(3), TSC_G2_IO4,
OPAMP1_VINP
COMP2_OUT
(1)
33 24 PC4 I/O TTa USART1_TX ADC2_IN5
(1) ADC2_IN11, OPAMP2_VINM,
34 25 PC5 I/O TTa USART1_RX, TSC_G3_IO1
OPAMP1_VINM

Doc ID 023353 Rev 5 37/133

Pinouts and pin description STM32F302xx/STM32F303xx

Table 11. STM32F302xx/STM32F303xx pin definitions (continued)

I/O structure
Pin number Pin functions
Pin name

Pin type

Notes
LQFP100

(function
LQFP64

LQFP48
after Alternate functions Additional functions
reset)

ADC3_IN12(3), COMP4_INP,
TIM3_CH3, TIM1_CH2N,
35 26 18 PB0 I/O TTa OPAMP3_VINP(3),
TIM8_CH2N(3), TSC_G3_IO2
OPAMP2_VINP
TIM3_CH4, TIM1_CH3N,
ADC3_IN1(3),
36 27 19 PB1 I/O TTa TIM8_CH3N(3), COMP4_OUT,
OPAMP3_VOUT(3)
TSC_G3_IO3
ADC2_IN12, COMP4_INM,
37 28 20 PB2 I/O TTa TSC_G3_IO4
OPAMP3_VINM(3)
(1)
38 PE7 I/O TTa TIM1_ETR ADC3_IN13(3), COMP4_INP
(1)
39 PE8 I/O TTa TIM1_CH1N COMP4_INM, ADC34_IN6(3)
(1)
40 PE9 I/O TTa TIM1_CH1 ADC3_IN2(3)
(1)
41 PE10 I/O TTa TIM1_CH2N ADC3_IN14(3)
(1)
42 PE11 I/O TTa TIM1_CH2 ADC3_IN15(3)
(1)
43 PE12 I/O TTa TIM1_CH3N ADC3_IN16(3)
(1)
44 PE13 I/O TTa TIM1_CH3 ADC3_IN3(3)
(1)
45 PE14 I/O TTa TIM1_CH4, TIM1_BKIN2 ADC4_IN1(3)
(1)
46 PE15 I/O TTa USART3_RX, TIM1_BKIN ADC4_IN2(3)
COMP5_INM(3),
USART3_TX, TIM2_CH3,
47 29 21 PB10 I/O TTa OPAMP4_VINM(3),
TSC_SYNC
OPAMP3_VINM(3)
USART3_RX, TIM2_CH4, COMP6_INP,
48 30 22 PB11 I/O TTa
TSC_G6_IO1 OPAMP4_VINP(3)
49 31 23 VSS_2 S Digital ground
50 32 24 VDD_2 S Digital power supply
SPI2_NSS, I2S2_WS(3), ADC4_IN3(3),
51 33 25 PB12 I/O TTa I2C2_SMBA, USART3_CK, COMP3_INM(3),
TIM1_BKIN, TSC_G6_IO2 OPAMP4_VOUT(3),
ADC3_IN5(3),
SPI2_SCK, I2S2_CK(3),
COMP5_INP(3),
52 34 26 PB13 I/O TTa USART3_CTS, TIM1_CH1N,
OPAMP4_VINP(3),
TSC_G6_IO3
OPAMP3_VINP(3)
SPI2_MISO, I2S2ext_SD(3),
COMP3_INP(3),
53 35 27 PB14 I/O TTa USART3_RTS, TIM1_CH2N,
ADC4_IN4(3), OPAMP2_VINP
TIM15_CH1, TSC_G6_IO4
SPI2_MOSI, I2S2_SD(3),
ADC4_IN5(3), RTC_REFIN,
54 36 28 PB15 I/O TTa TIM1_CH3N, TIM15_CH1N,
COMP6_INM
TIM15_CH2
(1) ADC4_IN12(3),
55 PD8 I/O TTa USART3_TX
OPAMP4_VINM(3)
56 PD9 I/O TTa (1) USART3_RX ADC4_IN13(3)
57 PD10 I/O TTa (1) USART3_CK ADC34_IN7(3), COMP6_INM

38/133 Doc ID 023353 Rev 5

STM32F302xx/STM32F303xx Pinouts and pin description

Table 11. STM32F302xx/STM32F303xx pin definitions (continued)

I/O structure
Pin number Pin functions
Pin name

Pin type

Notes
LQFP100

(function
LQFP64

LQFP48
after Alternate functions Additional functions
reset)

(1) ADC34_IN8(3), COMP6_INP,

58 PD11 I/O TTa USART3_CTS
OPAMP4_VINP(3)
(1) USART3_RTS, TIM4_CH1, ADC34_IN9(3),
59 PD12 I/O TTa
TSC_G8_IO1 COMP5_INP(3)
(1) ADC34_IN10(3),
60 PD13 I/O TTa TIM4_CH2, TSC_G8_IO2
COMP5_INM(3)
COMP3_INP(3),
(1)
61 PD14 I/O TTa TIM4_CH3, TSC_G8_IO3 ADC34_IN11(3),
OPAMP2_VINP
(1) SPI2_NSS, TIM4_CH4,
62 PD15 I/O TTa COMP3_INM(3)
TSC_G8_IO4
(1) I2S2_MCK(3), COMP6_OUT,
63 37 PC6 I/O FT
TIM8_CH1(3), TIM3_CH1
(1) I2S3_MCK(3), TIM8_CH2(3),
64 38 PC7 I/O FT
TIM3_CH2, COMP5_OUT(3)
(1) TIM8_CH3(3), TIM3_CH3,
65 39 PC8 I/O FT
COMP3_OUT(3)
(1) TIM8_CH4(3), TIM8_BKIN2(3),
66 40 PC9 I/O FT
TIM3_CH4, I2S_CKIN(3)
I2C2_SMBA, I2S2_MCK(3),
USART1_CK, TIM1_CH1,
67 41 29 PA8 I/O FT
TIM4_ETR, MCO,
COMP3_OUT(3)
I2C2_SCL, I2S3_MCK(3),
USART1_TX, TIM1_CH2,
68 42 30 PA9 I/O FTf
TIM2_CH3, TIM15_BKIN,
TSC_G4_IO1, COMP5_OUT(3)
I2C2_SDA, USART1_RX,
TIM1_CH3, TIM2_CH4,
69 43 31 PA10 I/O FTf
TIM8_BKIN(3), TIM17_BKIN,
TSC_G4_IO2, COMP6_OUT
USART1_CTS, USB_DM,
CAN_RX, TIM1_CH1N,
70 44 32 PA11 I/O FT
TIM1_CH4, TIM1_BKIN2,
TIM4_CH1, COMP1_OUT
USART1_RTS, USB_DP,
CAN_TX, TIM1_CH2N,
71 45 33 PA12 I/O FT
TIM1_ETR, TIM4_CH2,
TIM16_CH1, COMP2_OUT
USART3_CTS, TIM4_CH3,
72 46 34 PA13 I/O FT TIM16_CH1N, TSC_G4_IO3,
IR_OUT, SWDIO-JTMS
(1) I2C2_SCL, USART3_RTS,
73 PF6 I/O FTf
TIM4_CH4

Doc ID 023353 Rev 5 39/133

Pinouts and pin description STM32F302xx/STM32F303xx

Table 11. STM32F302xx/STM32F303xx pin definitions (continued)

I/O structure
Pin number Pin functions
Pin name

Pin type

Notes
LQFP100

(function
LQFP64

LQFP48
after Alternate functions Additional functions
reset)

74 47 35 VSS_3 S Ground
75 48 36 VDD_3 S Digital power supply
I2C1_SDA, USART2_TX,
76 49 37 PA14 I/O FTf TIM8_CH2(3), TIM1_BKIN,
TSC_G4_IO4, SWCLK-JTCK
I2C1_SCL, SPI1_NSS,
SPI3_NSS, I2S3_WS(3), JTDI,
77 50 38 PA15 I/O FTf
USART2_RX, TIM1_BKIN,
TIM2_CH1_ETR, TIM8_CH1(3)
SPI3_SCK, I2S3_CK(3),
(1)
78 51 PC10 I/O FT USART3_TX, UART4_TX,
TIM8_CH1N(3)
SPI3_MISO, I2S3ext_SD(3),
(1)
79 52 PC11 I/O FT USART3_RX, UART4_RX,
TIM8_CH2N(3)
SPI3_MOSI, I2S3_SD(3),
(1)
80 53 PC12 I/O FT USART3_CK, UART5_TX,
TIM8_CH3N(3)
(1)
81 PD0 I/O FT CAN_RX
(1) CAN_TX, TIM8_CH4(3),
82 PD1 I/O FT
TIM8_BKIN2(3)
(1) UART5_RX, TIM3_ETR,
83 54 PD2 I/O FT
TIM8_BKIN(3)
(1) USART2_CTS,
84 PD3 I/O FT
TIM2_CH1_ETR
(1)
85 PD4 I/O FT USART2_RTS, TIM2_CH2
(1)
86 PD5 I/O FT USART2_TX
(1)
87 PD6 I/O FT USART2_RX, TIM2_CH4
(1)
88 PD7 I/O FT USART2_CK, TIM2_CH3
SPI3_SCK, I2S3_CK(3),
SPI1_SCK, USART2_TX,
TIM2_CH2, TIM3_ETR,
89 55 39 PB3 I/O FT
TIM4_ETR, TIM8_CH1N(3),
TSC_G5_IO1, JTDO-
TRACESWO
SPI3_MISO, I2S3ext_SD(3),
SPI1_MISO, USART2_RX,
90 56 40 PB4 I/O FT TIM3_CH1, TIM16_CH1,
TIM17_BKIN, TIM8_CH2N(3),
TSC_G5_IO2, NJTRST

40/133 Doc ID 023353 Rev 5

STM32F302xx/STM32F303xx Pinouts and pin description

Table 11. STM32F302xx/STM32F303xx pin definitions (continued)

I/O structure
Pin number Pin functions
Pin name

Pin type

Notes
LQFP100

(function
LQFP64

LQFP48
after Alternate functions Additional functions
reset)

SPI3_MOSI, SPI1_MOSI,
I2S3_SD(3), I2C1_SMBA,
91 57 41 PB5 I/O FT USART2_CK, TIM16_BKIN,
TIM3_CH2, TIM8_CH3N(3),
TIM17_CH1
I2C1_SCL, USART1_TX,
TIM16_CH1N, TIM4_CH1,
92 58 42 PB6 I/O FTf
TIM8_CH1(3), TSC_G5_IO3,
TIM8_ETR(3), TIM8_BKIN2(3)
I2C1_SDA, USART1_RX,
TIM3_CH4, TIM4_CH2,
93 59 43 PB7 I/O FTf
TIM17_CH1N, TIM8_BKIN(3),
TSC_G5_IO4
94 60 44 BOOT0 I B Boot memory selection
I2C1_SCL, CAN_RX,
TIM16_CH1, TIM4_CH3,
95 61 45 PB8 I/O FTf
TIM8_CH2(3), TIM1_BKIN,
TSC_SYNC, COMP1_OUT
I2C1_SDA, CAN_TX,
TIM17_CH1, TIM4_CH4,
96 62 46 PB9 I/O FTf
TIM8_CH3(3), IR_OUT,
COMP2_OUT
(1) USART1_TX, TIM4_ETR,
97 PE0 I/O FT
TIM16_CH1
(1)
98 PE1 I/O FT USART1_RX, TIM17_CH1
99 63 47 VSS_1 S Ground
100 64 48 VDD_1 S Digital power supply
1. Function availability depends on the chosen device.
When using the small packages (48 and 64 pin packages), the GPIO pins which are not present on these packages, must
not be configured in analog mode.
2. PC13, PC14 and PC15 are supplied through the power switch. Since the switch sinks only a limited amount of current
(3 mA), the use of GPIO PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (e.g. to drive an LED).

After the first backup domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the
content of the Backup registers which is not reset by the main reset. For details on how to manage these GPIOs, refer to
the Battery backup domain and BKP register description sections in the reference manual.
3. On STM32F303xx devices only.

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42/133

Pinouts and pin description

Table 12. Alternate functions for port A
Port
&
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF14 AF15
Pin
Name

TIM2_
TSC_ USART2 COMP1 TIM8_ TIM8_ EVENT
PA0 CH1_
G1_IO1 _CTS _OUT BKIN ETR OUT
ETR
TIM2_ TSC_ USART2 TIM15_ EVENT
PA1
CH2 G1_IO2 _RTS CH1N OUT
TIM2_ TSC_ USART2 COMP2 TIM15_ EVENT
PA2
CH3 G1_IO3 _TX _OUT CH1 OUT
TIM2_ TSC_ USART2 TIM15_ EVENT
PA3
CH4 G1_IO4 _RX CH2 OUT
Doc ID 023353 Rev 5

TIM3_ TSC_ SPI1_ SPI3_NSS, USART2 EVENT

PA4
CH2 G2_IO1 NSS I2S3_WS _CK OUT
TIM2_
TSC_ SPI1_ EVENT
PA5 CH1_
G2_IO2 SCK OUT
ETR
TIM16_ TIM3_ TSC_ TIM8_ SPI1_ COMP1 EVENT
PA6 TIM1_BKIN
CH1 CH1 G2_IO3 BKIN MISO _OUT OUT
TIM17_ TIM3_ TSC_ TIM8_ SPI1_ COMP2 EVENT
PA7 TIM1_CH1N
CH1 CH2 G2_IO4 CH1N MOSI _OUT OUT
I2C2_ I2S2_ USART1 COMP3 TIM4_ EVENT

STM32F302xx/STM32F303xx
PA8 MCO TIM1_CH1
SMBA MCK _CK _OUT ETR OUT
TSC_ I2C2_ I2S3_ USART1 COMP5 TIM15_ TIM2_ EVENT
PA9 TIM1_CH2
G4_IO1 SCL MCK _TX _OUT BKIN CH3 OUT
TIM17_ TSC_ I2C2_ USART1 COMP6 TIM2_ TIM8_ EVENT
PA10 TIM1_CH3
BKIN G4_IO2 SDA _RX _OUT CH4 BKIN OUT

USART1 COMP1 TIM4_ TIM1_ USB_ EVENT

PA11 TIM1_CH1N CAN_RX TIM1_CH4
_CTS _OUT CH1 BKIN2 DM OUT
 Table 12. Alternate functions for port A (continued)

STM32F302xx/STM32F303xx
Port
&
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF14 AF15
Pin
Name

TIM16_ USART1 COMP2 TIM4_ USB_ EVENT

PA12 TIM1_CH2N CAN_TX TIM1_ETR
CH1 _RTS _OUT CH2 DP OUT
SWDIO TIM16_ TSC_ IR_ USART3 TIM4_ EVENT
PA13
-JTMS CH1N G4_IO3 OUT _CTS CH3 OUT
SWCLK TSC_ I2C1_ TIM8_ USART2 EVENT
PA14 TIM1_BKIN
-JTCK G4_IO4 SDA CH2 _TX OUT
TIM2_
TIM8_ I2C1_ SPI1_ SPI3_NSS, USART2 TIM1_ EVENT
PA15 JTDI CH1_
CH1 SCL NSS I2S3_WS _RX BKIN OUT
ETR
Doc ID 023353 Rev 5

Pinouts and pin description

43/133
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Pinouts and pin description

Table 13. Alternate functions for port B
Port
&
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF12 AF15
Pin
Name

TIM3_ TSC_ TIM8_ EVENT

PB0 TIM1_CH2N
CH3 G3_IO2 CH2N OUT
TIM3_ TSC_ TIM8_ COMP4_ EVENT
PB1 TIM1_CH3N
CH4 G3_IO3 CH3N OUT OUT
TSC_ EVENT
PB2
G3_IO4 OUT
JTDO-
TIM2_ TIM4_ TSC_ TIM8_ SPI1_ SPI3_SCK, USART2_ TIM3_ EVENT
PB3 TRACES
CH2 ETR G5_IO1 CH1N SCK I2S3_CK TX ETR OUT
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WO
TIM16_ TIM3_ TSC_ TIM8_ SPI1_ SPI3_MISO, USART2_ TIM17_ EVENT
PB4 NJTRST
CH1 CH1 G5_IO2 CH2N MISO I2S3ext_SD RX BKIN OUT
TIM16_ TIM3_ TIM8_ I2C1_ SPI1_ SPI3_MOSI, USART2_ TIM17_ EVENT
PB5
BKIN CH2 CH3N SMBA MOSI I2S3_SD CK CH1 OUT
TIM16_ TIM4_ TSC_ TIM8_ USART1_ TIM8_ EVENT
PB6 I2C1_SCL TIM8_CH1
CH1N CH1 G5_IO3 ETR TX BKIN2 OUT
TIM17_ TIM4_ TSC_ I2C1_ TIM8_ USART1_ TIM3_ EVENT
PB7
CH1N CH2 G5_IO4 SDA BKIN RX CH4 OUT
TIM16_ TIM4_ TSC_ COMP1_ TIM8_ TIM1_ EVENT
PB8 I2C1_SCL CAN_RX

STM32F302xx/STM32F303xx
CH1 CH3 SYNC OUT CH2 BKIN OUT
TIM17_ TIM4_ I2C1_ COMP2_ TIM8_ EVENT
PB9 IR_OUT CAN_TX
CH1 CH4 SDA OUT CH3 OUT
TIM2_ TSC_ USART3_ EVENT
PB10
CH3 SYNC TX OUT
TIM2_ TSC_ USART3_ EVENT
PB11
CH4 G6_IO1 RX OUT
TSC_ I2C2_ SPI2_NSS, TIM1_ USART3_ EVENT
PB12
G6_IO2 SMBA I2S2_WS BKIN CK OUT
 Table 13. Alternate functions for port B (continued)

STM32F302xx/STM32F303xx
Port
&
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF12 AF15
Pin
Name

TSC_ SPI2_SCK, TIM1_ USART3_ EVENT

PB13
G6_IO3 I2S2_CK CH1N CTS OUT
TIM15_ TSC_ SPI2_MISO, TIM1_ USART3_ EVENT
PB14
CH1 G6_IO4 I2S2ext_SD CH2N RTS OUT
TIM15_ TIM15_ TIM1_ SPI2_MOSI, EVENT
PB15
CH2 CH1N CH3N I2S2_SD OUT
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Pinouts and pin description

Table 14. Alternate functions for port C
Port &
Pin AF1 AF2 AF3 AF4 AF5 AF6 AF7
Name

PC0 EVENTOUT
PC1 EVENTOUT
PC2 EVENTOUT COMP7_OUT
PC3 EVENTOUT TIM1_BKIN2
PC4 EVENTOUT USART1_TX
PC5 EVENTOUT TSC_G3_IO1 USART1_RX
PC6 EVENTOUT TIM3_CH1 TIM8_CH1 I2S2_MCK COMP6_OUT
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PC7 EVENTOUT TIM3_CH2 TIM8_CH2 I2S3_MCK COMP5_OUT

PC8 EVENTOUT TIM3_CH3 TIM8_CH3 COMP3_OUT
PC9 EVENTOUT TIM3_CH4 TIM8_CH4 I2S_CKIN TIM8_BKIN2
PC10 EVENTOUT TIM8_CH1N UART4_TX SPI3_SCK, I2S3_CK USART3_TX
PC11 EVENTOUT TIM8_CH2N UART4_RX SPI3_MISO, I2S3ext_SD USART3_RX
PC12 EVENTOUT TIM8_CH3N UART5_TX SPI3_MOSI, I2S3_SD USART3_CK
PC13 TIM1_CH1N
PC14
PC15

STM32F302xx/STM32F303xx
 STM32F302xx/STM32F303xx
Table 15. Alternate functions for port D
Port &
AF1 AF2 AF3 AF4 AF5 AF6 AF7
Pin Name

PD0 EVENTOUT CAN_RX

PD1 EVENTOUT TIM8_CH4 TIM8_BKIN2 CAN_TX
PD2 EVENTOUT TIM3_ETR TIM8_BKIN UART5_RX
PD3 EVENTOUT TIM2_CH1_ETR USART2_CTS
PD4 EVENTOUT TIM2_CH2 USART2_RTS
PD5 EVENTOUT USART2_TX
PD6 EVENTOUT TIM2_CH4 USART2_RX
PD7 EVENTOUT TIM2_CH3 USART2_CK
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PD8 EVENTOUT USART3_TX

PD9 EVENTOUT USART3_RX
PD10 EVENTOUT USART3_CK
PD11 EVENTOUT USART3_CTS
PD12 EVENTOUT TIM4_CH1 TSC_G8_IO1 USART3_RTS
PD13 EVENTOUT TIM4_CH2 TSC_G8_IO2
PD14 EVENTOUT TIM4_CH3 TSC_G8_IO3
PD15 EVENTOUT TIM4_CH4 TSC_G8_IO4 SPI2_NSS

Pinouts and pin description

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Pinouts and pin description

Table 16. Alternate functions for port E
Port &
AF0 AF1 AF2 AF3 AF4 AF6 AF7
Pin Name

PE0 EVENTOUT TIM4_ETR TIM16_CH1 USART1_TX

PE1 EVENTOUT TIM17_CH1 USART1_RX
PE2 TRACECK EVENTOUT TIM3_CH1 TSC_G7_IO1
PE3 TRACED0 EVENTOUT TIM3_CH2 TSC_G7_IO2
PE4 TRACED1 EVENTOUT TIM3_CH3 TSC_G7_IO3
PE5 TRACED2 EVENTOUT TIM3_CH4 TSC_G7_IO4
PE6 TRACED3 EVENTOUT
PE7 EVENTOUT TIM1_ETR
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PE8 EVENTOUT TIM1_CH1N

PE9 EVENTOUT TIM1_CH1
PE10 EVENTOUT TIM1_CH2N
PE11 EVENTOUT TIM1_CH2
PE12 EVENTOUT TIM1_CH3N
PE13 EVENTOUT TIM1_CH3
PE14 EVENTOUT TIM1_CH4 TIM1_BKIN2
PE15 EVENTOUT TIM1_BKIN USART3_RX

STM32F302xx/STM32F303xx
 STM32F302xx/STM32F303xx
Table 17. Alternate functions for port F
Port &
AF1 AF2 AF3 AF4 AF5 AF6 AF7
Pin Name

PF0 I2C2_SDA TIM1_CH3N

PF1 I2C2_SCL
PF2 EVENTOUT
PF4 EVENTOUT COMP1_OUT
PF6 EVENTOUT TIM4_CH4 I2C2_SCL USART3_RTS
PF9 EVENTOUT TIM15_CH1 SPI2_SCK
PF10 EVENTOUT TIM15_CH2 SPI2_SCK
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Memory mapping STM32F302xx/STM32F303xx

5 Memory mapping

Figure 8. STM32F30xB/C memory map

0x5000 07FF
AHB3
0xFFFF FFFF 0x5000 0000

Cortex-M4F Reserved
7 Internal
Peripherals
0x4800 1800
AHB2
0xE000 0000 0x4800 0000

Reserved
6 0x4002 43FF
AHB1
0xC000 0000
0x4002 0000
Reserved
5
0x4001 6C00
APB2
0xA000 0000
0x4001 0000
Reserved
4 0x4000 A000
APB1
0x8000 0000 0x4000 0000

3 0x1FFF FFFF
Option bytes
0x6000 0000
0x1FFF F800
System memory
2 0x1FFF D800
Reserved
0x1000 2000
0x4000 0000 Peripherals CCM RAM
0x1000 0000
1 0x0804 0000
Reserved

0x2000 0000 SRAM Flash memory

0x0800 0000
0 CODE Reserved
0x0004 0000
0x0000 0000
Flash, system memory
or SRAM, depending
on BOOT configuration
Reserved
0x0000 0000

MS30355V1

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STM32F302xx/STM32F303xx Memory mapping

Table 18. STM32F30xB/C memory map and peripheral register boundary

addresses
Size
Bus Boundary address Peripheral
(bytes)

0x5000 0400 - 0x5000 07FF 1K ADC3 - ADC4

AHB3
0x5000 0000 - 0x5000 03FF 1K ADC1 - ADC2
0x4800 1800 - 0x4FFF FFFF ~132 M Reserved
0x4800 1400 - 0x4800 17FF 1K GPIOF
0x4800 1000 - 0x4800 13FF 1K GPIOE
0x4800 0C00 - 0x4800 0FFF 1K GPIOD
AHB2
0x4800 0800 - 0x4800 0BFF 1K GPIOC
0x4800 0400 - 0x4800 07FF 1K GPIOB
0x4800 0000 - 0x4800 03FF 1K GPIOA
0x4002 4400 - 0x47FF FFFF ~128 M Reserved
0x4002 4000 - 0x4002 43FF 1K TSC
0x4002 3400 - 0x4002 3FFF 3K Reserved
0x4002 3000 - 0x4002 33FF 1K CRC
0x4002 2400 - 0x4002 2FFF 3K Reserved
0x4002 2000 - 0x4002 23FF 1K Flash interface
AHB1
0x4002 1400 - 0x4002 1FFF 3K Reserved
0x4002 1000 - 0x4002 13FF 1K RCC
0x4002 0800 - 0x4002 0FFF 2K Reserved
0x4002 0400 - 0x4002 07FF 1K DMA2
0x4002 0000 - 0x4002 03FF 1K DMA1
0x4001 8000 - 0x4001 FFFF 32 K Reserved
0x4001 4C00 - 0x4001 7FFF 13 K Reserved
0x4001 4800 - 0x4001 4BFF 1K TIM17
0x4001 4400 - 0x4001 47FF 1K TIM16
0x4001 4000 - 0x4001 43FF 1K TIM15
0x4001 3C00 - 0x4001 3FFF 1K Reserved
0x4001 3800 - 0x4001 3BFF 1K USART1
APB2
0x4001 3400 - 0x4001 37FF 1K TIM8
0x4001 3000 - 0x4001 33FF 1K SPI1
0x4001 2C00 - 0x4001 2FFF 1K TIM1
0x4001 0800 - 0x4001 2BFF 9K Reserved
0x4001 0400 - 0x4001 07FF 1K EXTI
0x4001 0000 - 0x4001 03FF 1K SYSCFG + COMP + OPAMP

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Memory mapping STM32F302xx/STM32F303xx

Table 18. STM32F30xB/C memory map and peripheral register boundary addresses
(continued)
Size
Bus Boundary address Peripheral
(bytes)

0x4000 8000 - 0x4000 FFFF 32 K Reserved

0x4000 7800 - 0x4000 7FFF 2K Reserved
0x4000 7400 - 0x4000 77FF 1K DAC (dual)
0x4000 7000 - 0x4000 73FF 1K PWR
0x4000 6C00 - 0x4000 6FFF 1K Reserved
0x4000 6800 - 0x4000 6BFF 1K Reserved
0x4000 6400 - 0x4000 67FF 1K bxCAN
0x4000 6000 - 0x4000 63FF 1K USB SRAM 512 bytes
0x4000 5C00 - 0x4000 5FFF 1K USB device FS
0x4000 5800 - 0x4000 5BFF 1K I2C2
0x4000 5400 - 0x4000 57FF 1K I2C1
0x4000 5000 - 0x4000 53FF 1K UART5
0x4000 4C00 - 0x4000 4FFF 1K UART4
0x4000 4800 - 0x4000 4BFF 1K USART3
0x4000 4400 - 0x4000 47FF 1K USART2
APB1
0x4000 4000 - 0x4000 43FF 1K I2S3ext
0x4000 3C00 - 0x4000 3FFF 1K SPI3/I2S3
0x4000 3800 - 0x4000 3BFF 1K SPI2/I2S2
0x4000 3400 - 0x4000 37FF 1K I2S2ext
0x4000 3000 - 0x4000 33FF 1K IWDG
0x4000 2C00 - 0x4000 2FFF 1K WWDG
0x4000 2800 - 0x4000 2BFF 1K RTC
0x4000 1800 - 0x4000 27FF 4K Reserved
0x4000 1400 - 0x4000 17FF 1K TIM7
0x4000 1000 - 0x4000 13FF 1K TIM6
0x4000 0C00 - 0x4000 0FFF 1K Reserved
0x4000 0800 - 0x4000 0BFF 1K TIM4
0x4000 0400 - 0x4000 07FF 1K TIM3
0x4000 0000 - 0x4000 03FF 1K TIM2

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STM32F302xx/STM32F303xx Electrical characteristics

6 Electrical characteristics

6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

6.1.1 Minimum and maximum values

Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3σ).

6.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = VDDA = 3.3 V. They
are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean±2σ).

6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 9.

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 10.

Figure 9. Pin loading conditions Figure 10. Pin input voltage

-#5PIN -#5PIN

C = 50 pF 6).

-36 -36

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Electrical characteristics STM32F302xx/STM32F303xx

6.1.6 Power supply scheme

Figure 11. Power supply scheme

VBAT

Backup circuitry
Po wer swi tch (LSE,RTC,
1.65 - 3.6V
Wake-up logic
Backup registers)

Level shifter
OUT
IO
GP I/Os Logic
IN Kernel logic
(CPU,
Digital
VDD
& Memories)
4 × VDD
Regulator
4 × 100 nF
+ 1 × 4.7 μF 3 × VSS

VDDA
VDDA

VREF

VREF+ ADC/ !NALOG2#S0,,

10 nF COMPARATORS/0!-0
VREF- DAC
10 nF + 1 μF
+ 1 μF
VSSA

MS19875V3

1. Dotted lines represent the internal connections on low pin count packages, joining the dedicated supply
pins.
Caution: Each power supply pair (VDD/VSS, VDDA/VSSA etc..) must be decoupled with filtering
ceramic capacitors as shown above. These capacitors must be placed as close as possible
to, or below the appropriate pins on the underside of the PCB to ensure the good
functionality of the device.

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STM32F302xx/STM32F303xx Electrical characteristics

6.1.7 Current consumption measurement

Figure 12. Current consumption measurement scheme

)$$?6"!4
6"!4

)$$
6$$

)$$!
6$$!

-36

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Electrical characteristics STM32F302xx/STM32F303xx

6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 19: Voltage characteristics,
Table 20: Current characteristics, and Table 21: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.

Table 19. Voltage characteristics(1)

Symbol Ratings Min Max Unit

External main supply voltage (including VDDA, VBAT

VDD–VSS -0.3 4.0
and VDD)
VDD–VDDA Allowed voltage difference for VDD > VDDA - 0.4
VREF+–VDDA(2) Allowed voltage difference for VREF+ > VDDA - 0.4 V
Input voltage on FT and FTf pins VSS − 0.3 VDD + 4.0
VIN(3) Input voltage on TTa pins VSS − 0.3 4.0
Input voltage on any other pin VSS − 0.3 4.0
|ΔVDDx| Variations between different VDD power pins - 50
mV
|VSSX − VSS| Variations between all the different ground pins - 50
Electrostatic discharge voltage (human body see Section 6.3.12: Electrical
VESD(HBM)
model) sensitivity characteristics
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the
permitted range. The following relationship must be respected between VDDA and VDD:
VDDA must power on before or at the same time as VDD in the power up sequence.
VDDA must be greater than or equal to VDD.
2. VREF+ must be always lower or equal than VDDA (VREF+ ≤ VDDA). If unused then it must be connected to VDDA.
3. VIN maximum must always be respected. Refer to Table 20: Current characteristics for the maximum allowed injected
current values.

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STM32F302xx/STM32F303xx Electrical characteristics

Table 20. Current characteristics

Symbol Ratings Max. Unit

IVDD(Σ) Total current into sum of all VDD_x power lines (source) 160
IVSS(Σ) Total current out of sum of all VSS_x ground lines (sink) − 160
(1)
IVDD Maximum current into each VDD_x power line (source) 100
IVSS Maximum current out of each VSS _x ground line (sink)(1) − 100
Output current sunk by any I/O and control pin 25
IIO(PIN)
Output current source by any I/O and control pin − 25
mA
(2)
Total output current sunk by sum of all IOs and control pins 80
ΣIIO(PIN)
Total output current sourced by sum of all IOs and control pins(2) − 80
Injected current on FT, FTf and B pins(3) -5/+0
IINJ(PIN) Injected current on TC and RST pin(4) ±5
(5)
Injected current on TTa pins ±5
ΣIINJ(PIN) Total injected current (sum of all I/O and control pins)(6) ± 25
1. All main power (VDD, VDDA) and ground (VSS and VSSA) pins must always be connected to the external power supply, in
the permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins.The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
4. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. IINJ(PIN) must never be
exceeded. Refer to Table 19: Voltage characteristics for the maximum allowed input voltage values.
5. A positive injection is induced by VIN>VDDA while a negative injection is induced by VIN<VSS. IINJ(PIN) must never be
exceeded. Refer also to Table 19: Voltage characteristics for the maximum allowed input voltage values. Negative injection
disturbs the analog performance of the device. See note (2) below Table 68.
6. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).

Table 21. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range –65 to +150 °C

TJ Maximum junction temperature 150 °C

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Electrical characteristics STM32F302xx/STM32F303xx

6.3 Operating conditions

6.3.1 General operating conditions

Table 22. General operating conditions

Symbol Parameter Conditions Min Max Unit

fHCLK Internal AHB clock frequency 0 72

fPCLK1 Internal APB1 clock frequency 0 36 MHz
fPCLK2 Internal APB2 clock frequency 0 72
VDD Standard operating voltage 2 3.6 V
Analog operating voltage
Must have a potential 2 3.6
(OPAMP and DAC not used)
VDDA equal to or higher than V
Analog operating voltage VDD 2.4 3.6
(OPAMP and DAC used)
VBAT Backup operating voltage 1.65 3.6 V
TC I/O –0.3 VDD+0.3
TTa I/O –0.3 VDDA+0.3
VIN I/O input voltage V
FT and FTf I/O(1) –0.3 5.5
BOOT0 0 5.5
LQFP100 - 488
Power dissipation at TA =
PD 85 °C for suffix 6 or TA = LQFP64 - 444 mW
105 °C for suffix 7(2)
LQFP48 - 364
Maximum power
Ambient temperature for 6 –40 85
dissipation °C
suffix version
Low power dissipation(3) –40 105
TA
Maximum power
Ambient temperature for 7 –40 105
dissipation °C
suffix version
(3)
Low power dissipation –40 125
6 suffix version –40 105
TJ Junction temperature range °C
7 suffix version –40 125
1. To sustain a voltage higher than VDD+0.3 V, the internal pull-up/pull-down resistors must be disabled.
2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 21: Thermal
characteristics).
3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 21: Thermal characteristics).

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6.3.2 Operating conditions at power-up / power-down

The parameters given in Table 23 are derived from tests performed under the ambient
temperature condition summarized in Table 22.

Table 23. Operating conditions at power-up / power-down

Symbol Parameter Conditions Min Max Unit

VDD rise time rate 0 ∞

tVDD
VDD fall time rate 20 ∞
µs/V
VDDA rise time rate 0 ∞
tVDDA
VDDA fall time rate 20 ∞

6.3.3 Embedded reset and power control block characteristics

The parameters given in Table 24 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 22.

Table 24. Embedded reset and power control block characteristics

Symbol Parameter Conditions Min Typ Max Unit

Power on/power down Falling edge 1.8(2) 1.88 1.96 V

VPOR/PDR(1)
reset threshold Rising edge 1.84 1.92 2.0 V
(1)
VPDRhyst PDR hysteresis - 40 - mV
POR reset
tRSTTEMPO(3) 1.5 2.5 4.5 ms
temporization
1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector
monitors only VDD.
2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
3. Guaranteed by design, not tested in production

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Electrical characteristics STM32F302xx/STM32F303xx

Table 25. Programmable voltage detector characteristics

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

Rising edge 2.1 2.18 2.26

VPVD0 PVD threshold 0
Falling edge 2 2.08 2.16
Rising edge 2.19 2.28 2.37
VPVD1 PVD threshold 1
Falling edge 2.09 2.18 2.27
Rising edge 2.28 2.38 2.48
VPVD2 PVD threshold 2
Falling edge 2.18 2.28 2.38
Rising edge 2.38 2.48 2.58
VPVD3 PVD threshold 3
Falling edge 2.28 2.38 2.48
V
Rising edge 2.47 2.58 2.69
VPVD4 PVD threshold 4
Falling edge 2.37 2.48 2.59
Rising edge 2.57 2.68 2.79
VPVD5 PVD threshold 5
Falling edge 2.47 2.58 2.69
Rising edge 2.66 2.78 2.9
VPVD6 PVD threshold 6
Falling edge 2.56 2.68 2.8
Rising edge 2.76 2.88 3
VPVD7 PVD threshold 7
Falling edge 2.66 2.78 2.9
VPVDhyst(2) PVD hysteresis - 100 - mV
PVD current
IDD(PVD) - 0.15 0.26 µA
consumption
1. Data based on characterization results only, not tested in production.
2. Guaranteed by design, not tested in production.

6.3.4 Embedded reference voltage

The parameters given in Table 26 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 22.

Table 26. Embedded internal reference voltage

Symbol Parameter Conditions Min Typ Max Unit

–40 °C < TA < +105 °C 1.16 1.2 1.25 V

VREFINT Internal reference voltage
–40 °C < TA < +85 °C 1.16 1.2 1.24(1) V
ADC sampling time when
TS_vrefint reading the internal 2.2 - - µs
reference voltage
Internal reference voltage
VRERINT spread over the VDD = 3 V ±10 mV - - 10(2) mV
temperature range

TCoeff Temperature coefficient - - 100(2) ppm/°C

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STM32F302xx/STM32F303xx Electrical characteristics

1. Data based on characterization results, not tested in production.

2. Guaranteed by design, not tested in production

Table 27. Internal reference voltage calibration values

Calibration value name Description Memory address

Raw data acquired at

VREFINT_CAL temperature of 30 °C 0x1FFF F7BA - 0x1FFF F7BB
VDDA= 3.3 V

6.3.5 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 12: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.

Typical and maximum current consumption

The MCU is placed under the following conditions:
● All I/O pins are in input mode with a static value at VDD or VSS (no load)
● All peripherals are disabled except when explicitly mentioned
● The Flash memory access time is adjusted to the fHCLK frequency (0 wait state from 0
to 24 MHz,1 wait state from 24 to 48 MHz and 2 wait states from 48 to 72 MHz)
● Prefetch in ON (reminder: this bit must be set before clock setting and bus prescaling)
● When the peripherals are enabled fPCLK2 = fHCLK and fPCLK1 = fHCLK/2
● When fHCLK > 8 MHz, the PLL is ON and the PLL input is equal to HSI/2 (4 MHz) or
HSE (8 MHz) in bypass mode.
The parameters given in Table 28 to Table 32 are derived from tests performed under
ambient temperature and supply voltage conditions summarized in Table 22.

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Electrical characteristics STM32F302xx/STM32F303xx

Table 28. Typical and maximum current consumption from VDD supply at VDD = 3.6V
All peripherals enabled All peripherals disabled

Symbol Parameter Conditions fHCLK Max @ TA(1) Max @ TA(1) Unit

Typ Typ
25 °C 85 °C 105 °C 25 °C 85 °C 105 °C

72 MHz 61.2 65.8 67.6 68.5 27.8 30.3 30.7 31.5

64 MHz 54.7 59.1 60.2 61.1 24.6 27.2 27.6 28.3
48 MHz 41.7 45.1 46.2 47.2 19.2 21.1 21.4 21.8
External
clock (HSE 32 MHz 28.1 31.5 32.5 32.7 12.9 14.6 14.8 15.3
bypass)
Supply 24 MHz 21.4 23.7 24.4 25.2 10.0 11.4 11.4 12.1
current in 8 MHz 7.4 8.4 8.6 9.4 3.6 4.1 4.4 5.0
Run mode,
executing 1 MHz 1.3 1.6 1.8 2.6 0.8 1.0 1.2 2.1
from Flash 64 MHz 49.7 54.4 55.4 56.3 24.5 27.2 27.4 28.1
48 MHz 37.9 42.2 43.0 43.5 18.9 21.4 21.5 21.6
Internal
32 MHz 25.8 29.2 29.2 30.0 12.7 14.2 14.6 15.2
clock (HSI)
24 MHz 19.7 22.3 22.6 23.2 6.7 7.7 7.9 8.5
8 MHz 6.9 7.8 8.3 8.8 3.5 4.0 4.4 5.0
IDD mA
(2)
72 MHz 60.8 66.2 69.7 70.4(2) 27.4 31.7(2) 32.2 32.5(2)
64 MHz 54.3 59.1 62.2 63.3 24.3 28.3 28.7 28.8
48 MHz 41.0 45.6 47.3 47.9 18.3 21.6 21.9 22.1
External
clock (HSE 32 MHz 27.6 32.4 32.4 32.9 12.3 15.0 15.2 15.4
bypass)
Supply 24 MHz 20.8 23.9 24.3 25.0 9.3 11.3 11.4 12.0
current in 8 MHz 6.9 7.8 8.7 9.0 3.1 3.7 4.2 4.9
Run mode,
executing 1 MHz 0.9 1.2 1.5 2.3 0.4 0.6 1.0 1.8
from RAM 64 MHz 49.2 53.9 55.2 57.4 23.9 27.8 28.2 28.4
48 MHz 37.3 40.8 41.4 44.1 18.2 21.0 21.6 21.9
Internal
32 MHz 25.1 27.6 29.1 30.1 12.0 14.0 14.5 15.1
clock (HSI)
24 MHz 19.0 21.6 22.1 22.9 6.3 7.2 7.7 8.1
8 MHz 6.4 7.3 7.9 8.4 3.0 3.5 4.0 4.7

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Table 28. Typical and maximum current consumption from VDD supply at VDD = 3.6V
All peripherals enabled All peripherals disabled

Symbol Parameter Conditions fHCLK Max @ TA(1) Max @ TA(1) Unit

Typ Typ
25 °C 85 °C 105 °C 25 °C 85 °C 105 °C

72 MHz 44.0 48.4 49.4 50.5 6.6 7.5 7.9 8.7

64 MHz 39.2 43.3 44.0 45.2 6.0 6.8 7.2 7.9
48 MHz 29.6 32.7 33.3 34.3 4.5 5.2 5.6 6.3
External
clock (HSE 32 MHz 19.7 23.3 23.3 23.5 3.1 3.5 4.0 4.8
Supply bypass)
current in 24 MHz 14.9 17.6 17.8 18.3 2.4 2.8 3.3 3.9
Sleep 8 MHz 4.9 5.7 6.1 6.9 0.8 1.0 1.4 2.2
IDD mode, mA
executing 1 MHz 0.6 0.9 1.2 2.1 0.1 0.3 0.6 1.5
from Flash 64 MHz 34.2 38.1 39.2 40.3 5.7 6.3 6.8 7.5
or RAM
48 MHz 25.8 28.7 29.6 30.3 4.3 4.8 5.2 5.9
Internal
32 MHz 17.4 19.4 19.9 20.7 2.9 3.2 3.7 4.5
clock (HSI)
24 MHz 13.2 15.1 15.6 15.9 1.5 1.8 2.2 2.9
8 MHz 4.5 5.0 5.6 6.2 0.7 0.9 1.2 2.1
1. Data based on characterization results, not tested in production unless otherwise specified.
2. Data based on characterization results and tested in production with code executing from RAM.

Table 29. Typical and maximum current consumption from the VDDA supply
VDDA = 2.4 V VDDA = 3.6 V
Conditions
Symbol Parameter (1) fHCLK Max @ TA(2) Max @ TA(2) Unit
Typ Typ
25 °C 85 °C 105 °C 25 °C 85 °C 105 °C

72 MHz 225 276 289 297 245 302 319 329

64 MHz 198 249 261 268 216 270 284 293
48 MHz 149 195 204 211 159 209 222 230
HSE
32 MHz 102 145 152 157 110 154 162 169
Supply bypass
current in 24 MHz 80 119 124 128 86 126 131 135
Run mode, 8 MHz 2 3 4 6 3 4 5 9
IDDA code µA
executing 1 MHz 2 3 5 7 3 4 6 9
from Flash 64 MHz 270 323 337 344 299 354 371 381
or RAM
48 MHz 220 269 280 286 244 293 309 318
HSI clock 32 MHz 173 218 228 233 193 239 251 257
24 MHz 151 194 200 204 169 211 219 225
8 MHz 73 97 99 103 88 105 110 116

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1. Current consumption from the VDDA supply is independent of whether the peripherals are on or off. Furthermore when the
PLL is off, IDDA is independent from the frequency.
2. Data based on characterization results, not tested in production.

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Table 30. Typical and maximum VDD consumption in Stop and Standby modes
Typ @VDD (VDD=VDDA) Max(1)
Symbol Parameter Conditions Unit
TA = TA = TA =
2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V
25 °C 85 °C 105 °C

Regulator in run mode,

Supply 20.05 20.33 20.42 20.50 20.67 20.80 44.2(2) 553 1202(2)
all oscillators OFF
current in
Stop mode Regulator in low-power 7.63 7.77 7.90 8.07 8.17 8.33 30.6(2) 529 1156(2)
mode, all oscillators OFF
IDD µA
Supply LSI ON and IWDG ON 0.80 0.96 1.09 1.23 1.37 1.51 - - -
current in
Standby LSI OFF and IWDG OFF 0.60 0.74 0.83 0.93 1.02 1.11 5.0(2) 7.8 13.3(2)
mode
1. Data based on characterization results, not tested in production unless otherwise specified.
2. Data based on characterization results and tested in production.

Table 31. Typical and maximum VDDA consumption in Stop and Standby modes
Typ @VDD (VDD = VDDA) Max(1)
Symbol Parameter Conditions Unit
TA = TA = TA =
2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V
25 °C 85 °C 105 °C

Regulator in run mode,

1.81 1.95 2.07 2.20 2.35 2.52 3.7 5.5 8.8
all oscillators OFF
VDDA monitoring ON

Supply
current in Regulator in low-power
Stop mode mode, all oscillators 1.81 1.95 2.07 2.20 2.35 2.52 3.7 5.5 8.8
OFF
Supply LSI ON and IWDG ON 2.22 2.42 2.59 2.78 3.0 3.24 - - -
current in
Standby LSI OFF and IWDG
1.69 1.82 1.94 2.08 2.23 2.40 3.5 5.4 9.2
mode OFF
IDDA µA
Regulator in run mode,
1.05 1.08 1.10 1.15 1.22 1.29 - - -
VDDA monitoring OFF

Supply all oscillators OFF

current in Regulator in low-power
Stop mode mode, all oscillators 1.05 1.08 1.10 1.15 1.22 1.29 - - -
OFF
Supply LSI ON and IWDG ON 1.44 1.52 1.60 1.71 1.84 1.98 - - -
current in
Standby LSI OFF and IWDG
0.93 0.95 0.98 1.02 1.08 1.15 - - -
mode OFF

1. Data based on characterization results, not tested in production.

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Table 32. Typical and maximum current consumption from VBAT supply
Max
Typ @VBAT
@VBAT = 3.6 V(2)
Para Conditions
Symbol (1) Unit
meter
T = TA = TA =
1.65V 1.8V 2V 2.4V 2.7V 3V 3.3V 3.6V A
25°C 85°C 105°C

LSE & RTC

ON; "Xtal
mode" lower
driving 0.48 0.50 0.52 0.58 0.65 0.72 0.80 0.90 1.1 1.5 2.0
capability;
LSEDRV[1:
Backup
0] = '00'
domain
IDD_VBAT µA
supply LSE & RTC
ON; "Xtal
current
mode"
higher
0.83 0.86 0.90 0.98 1.03 1.10 1.20 1.30 1.5 2.2 2.9
driving
capability;
LSEDRV[1:
0] = '11'
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Data based on characterization results, not tested in production.

Figure 13. Typical VBAT current consumption (LSE and RTC ON/LSEDRV[1:0] = ’00’)




6
 6
6

6"!4—!

6
 6
)

 6
6

6

 #  #  #  #
4!  #
-36

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Typical current consumption

The MCU is placed under the following conditions:
● VDD = VDDA = 3.3 V
● All I/O pins available on each package are in analog input configuration
● The Flash access time is adjusted to fHCLK frequency (0 wait states from 0 to 24 MHz,
1 wait state from 24 to 48 MHz and 2 wait states from 48 MHz to 72 MHz), and Flash
prefetch is ON
● When the peripherals are enabled, fAPB1 = fAHB/2, fAPB2 = fAHB
● PLL is used for frequencies greater than 8 MHz
● AHB prescaler of 2, 4, 8,16 and 64 is used for the frequencies 4 MHz, 2 MHz, 1 MHz,
500 kHz and 125 kHz respectively.

Table 33. Typical current consumption in Run mode, code with data processing running from
Flash
Typ
Symbol Parameter Conditions fHCLK Peripherals Peripherals Unit
enabled disabled
72 MHz 61.3 28.0
64 MHz 54.8 25.4
48 MHz 41.9 19.3
32 MHz 28.5 13.3
24 MHz 21.8 10.4
Supply current in 16 MHz 14.9 7.2
IDD Run mode from mA
VDD supply 8 MHz 7.7 3.9
4 MHz 4.5 2.5
2 MHz 2.8 1.7
1 MHz 1.9 1.3
500 kHz 1.4 1.1
Running from HSE
crystal clock 8 MHz, 125 kHz 1.1 0.9
code executing from 72 MHz 240.3 239.5
Flash
64 MHz 210.9 210.3
48 MHz 155.8 155.6
32 MHz 105.7 105.6
24 MHz 82.1 82.0
Supply current in 16 MHz 58.8 58.8
IDDA(1) (2) Run mode from µA
VDDA supply 8 MHz 2.4 2.4
4 MHz 2.4 2.4
2 MHz 2.4 2.4
1 MHz 2.4 2.4
500 kHz 2.4 2.4
125 kHz 2.4 2.4
1. VDDA monitoring is ON.

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2. When peripherals are enabled, the power consumption of the analog part of peripherals such as ADC, DAC, Comparators,
OpAmp etc. is not included. Refer to the tables of characteristics in the subsequent sections.

Table 34. Typical current consumption in Sleep mode, code running from Flash or RAM
Typ
Symbol Parameter Conditions fHCLK Peripherals Peripherals Unit
enabled disabled
72 MHz 44.1 7.0
64 MHz 39.7 6.3
48 MHz 30.3 4.9
32 MHz 20.5 3.5
24 MHz 15.4 2.8
Supply current in 16 MHz 10.6 2.0
IDD Sleep mode from mA
VDD supply 8 MHz 5.4 1.1
4 MHz 3.2 1.0
2 MHz 2.1 0.9
1 MHz 1.5 0.8
500 kHz 1.2 0.8
Running from HSE
crystal clock 8 MHz, 125 kHz 1.0 0.8
code executing from 72 MHz 239.7 238.5
Flash or RAM
64 MHz 210.5 209.6
48 MHz 155.0 155.6
32 MHz 105.3 105.2
24 MHz 81.9 81.8
Supply current in 16 MHz 58.7 58.6
IDDA(1) (2) Sleep mode from µA
VDDA supply 8 MHz 2.4 2.4
4 MHz 2.4 2.4
2 MHz 2.4 2.4
1 MHz 2.4 2.4
500 kHz 2.4 2.4
125 kHz 2.4 2.4
1. VDDA monitoring is ON
2. When peripherals are enabled, the power consumption of the analog part of peripherals such as ADC, DAC, Comparators,
OpAmp etc. is not included. Refer to the tables of characteristics in the subsequent sections.

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I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 52: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption (seeTable 36: Peripheral current
consumption), the I/Os used by an application also contribute to the current consumption.
When an I/O pin switches, it uses the current from the MCU supply voltage to supply the I/O
pin circuitry and to charge/discharge the capacitive load (internal or external) connected to
the pin:

I SW = V DD × f SW × C

where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the MCU supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT+CS
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.

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Table 35. Switching output I/O current consumption

I/O toggling
Symbol Parameter Conditions(1) Typ Unit
frequency (fSW)

2 MHz 0.90
4 MHz 0.93
VDD = 3.3 V 8 MHz 1.16
Cext = 0 pF
C = CINT + CEXT+ CS 18 MHz 1.60
36 MHz 2.51
48 MHz 2.97
2 MHz 0.93
4 MHz 1.06
VDD = 3.3 V 8 MHz 1.47
Cext = 10 pF
C = CINT + CEXT +CS 18 MHz 2.26
36 MHz 3.39
48 MHz 5.99
2 MHz 1.03
I/O current
ISW 4 MHz 1.30 mA
consumption VDD = 3.3 V
Cext = 22 pF 8 MHz 1.79
C = CINT + CEXT +CS
18 MHz 3.01
36 MHz 5.99
2 MHz 1.10
4 MHz 1.31
VDD = 3.3 V
Cext = 33 pF 8 MHz 2.06
C = CINT + CEXT+ CS
18 MHz 3.47
36 MHz 8.35
2 MHz 1.20
4 MHz 1.54
VDD = 3.3 V
Cext = 47 pF 8 MHz 2.46
C = CINT + CEXT+ CS
18 MHz 4.51
36 MHz 9.98
1. CS = 5 pF (estimated value).

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On-chip peripheral current consumption

The MCU is placed under the following conditions:
● all I/O pins are in analog input configuration
● all peripherals are disabled unless otherwise mentioned
● the given value is calculated by measuring the current consumption
– with all peripherals clocked off
– with only one peripheral clocked on
● ambient operating temperature at 25°C and VDD = VDDA = 3.3 V.

Table 36. Peripheral current consumption

Typical consumption(1)
Peripheral Unit
IDD

BusMatrix (2) 5.6

DMA1 15.3
DMA2 12.5
CRC 2.1
GPIOA 10.0
GPIOB 10.3
GPIOC 2.2
GPIOD 8.8
GPIOE 3.3
GPIOF 3.0
TSC 5.5
ADC1&2 17.3
ADC3&4 18.8
µA/MHz
APB2-Bridge (3) 3.6
SYSCFG 7.3
TIM1 40.0
SPI1 8.8
TIM8 36.4
USART1 23.3
TIM15 17.1
TIM16 10.1
TIM17 11.0
APB1-Bridge (3)
6.1
TIM2 49.1
TIM3 38.8
TIM4 38.3

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Table 36. Peripheral current consumption (continued)

Typical consumption(1)
Peripheral Unit
IDD

TIM6 9.7
TIM7 12.1
WWDG 6.4
SPI2 40.4
SPI3 40.0
USART2 41.9
USART3 40.2
UART4 36.5 µA/MHz
UART5 30.8
I2C1 10.5
I2C2 10.4
USB 26.2
CAN 33.4
PWR 5.7
DAC 15.4
1. The power consumption of the analog part (IDDA) of peripherals such as ADC, DAC, Comparators, OpAmp
etc. is not included. Refer to the tables of characteristics in the subsequent sections.
2. BusMatrix is automatically active when at least one master is ON (CPU, DMA1 or DMA2).
3. The APBx bridge is automatically active when at least one peripheral is ON on the same bus.

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6.3.6 Wakeup time from low-power mode

The wakeup times given in Table 37 are measured starting from the wakeup event trigger up
to the first instruction executed by the CPU:
● For Stop or Sleep mode: the wakeup event is WFE.
● WKUP1 (PA0) pin is used to wakeup from Standby, Stop and Sleep modes.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 22.

Table 37. Low-power mode wakeup timings

Typ @VDD, VDD = VDDA
Symbol Parameter Conditions Max Unit
2.0 V 2.4 V 2.7 V 3V 3.3 V 3.6 V

Regulator in
4.1 3.9 3.8 3.7 3.6 3.5 4.5
run mode
Wakeup from
tWUSTOP Regulator in
Stop mode
low power 7.9 6.7 6.1 5.7 5.4 5.2 9 µs
mode
Wakeup from LSI and
tWUSTANDBY(1) 69.2 60.3 56.4 53.7 51.7 50 100
Standby mode IWDG OFF
CPU
Wakeup from
tWUSLEEP 6 - clock
Sleep mode
cycles
1. Data based on characterization results, not tested in production.

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6.3.7 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO. The
external clock signal has to respect the I/O characteristics in Section 6.3.14. However, the
recommended clock input waveform is shown in Figure 14.

Table 38. High-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

User external clock source

fHSE_ext 1 8 32 MHz
frequency(1)
VHSEH OSC_IN input pin high level voltage 0.7VDD - VDD
V
VHSEL OSC_IN input pin low level voltage VSS - 0.3VDD
tw(HSEH)
OSC_IN high or low time(1) 15 - -
tw(HSEL)
ns
tr(HSE)
OSC_IN rise or fall time(1) - - 20
tf(HSE)
1. Guaranteed by design, not tested in production.

Figure 14. High-speed external clock source AC timing diagram

T7(3%(

6(3%(


6(3%,

TR(3% T
TF(3% T7(3%,
4(3%

-36

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Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO. The
external clock signal has to respect the I/O characteristics in Section 6.3.14. However, the
recommended clock input waveform is shown in Figure 15

Table 39. Low-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

User External clock source

fLSE_ext - 32.768 1000 kHz
frequency(1)
OSC32_IN input pin high level
VLSEH 0.7VDD - VDD
voltage
V
OSC32_IN input pin low level
VLSEL VSS - 0.3VDD
voltage
tw(LSEH)
OSC32_IN high or low time(1) 450 - -
tw(LSEL)
ns
tr(LSE)
OSC32_IN rise or fall time(1) - - 50
tf(LSE)
1. Guaranteed by design, not tested in production.

Figure 15. Low-speed external clock source AC timing diagram

T7,3%(

6,3%(


6,3%,

TR,3% T
TF,3% T7,3%,
4,3%

-36

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Electrical characteristics STM32F302xx/STM32F303xx

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 32 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 40. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).

Table 40. HSE oscillator characteristics

Symbol Parameter Conditions(1) Min(2) Typ Max(2) Unit

fOSC_IN Oscillator frequency 4 8 32 MHz

RF Feedback resistor - 200 kΩ
(3)
During startup - - 8.5
VDD=3.3 V, Rm= 30Ω,
- 0.4 -
CL=10 pF@8 MHz
VDD=3.3 V, Rm= 45Ω,
- 0.5 -
CL=10 pF@8 MHz
IDD HSE current consumption VDD=3.3 V, Rm= 30Ω, mA
- 0.8 -
CL=10 pF@32 MHz
VDD=3.3 V, Rm= 30Ω,
- 1 -
CL=10 pF@32 MHz
VDD=3.3 V, Rm= 30Ω,
- 1.5 -
CL=10 pF@32 MHz
gm Oscillator transconductance Startup 10 - - mA/V
tSU(HSE)(4) Startup time VDD is stabilized - 2 - ms
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Guaranteed by design, not tested in production.
3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer

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For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 16). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 16. Typical application with an 8 MHz crystal

2ESONATORWITH
INTEGRATEDCAPACITORS
#,
/3#?). F(3%
"IAS
-( Z
CONTROLLED
2&
RESONATOR GAIN
/3#?/5 4
2%84
#,

-36

1. REXT value depends on the crystal characteristics.

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Electrical characteristics STM32F302xx/STM32F303xx

Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 41. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).

Table 41. LSE oscillator characteristics (fLSE = 32.768 kHz)

Symbol Parameter Conditions(1) Min(2) Typ Max(2) Unit

LSEDRV[1:0]=00
- 0.5 0.9
lower driving capability
LSEDRV[1:0]=01
- - 1
medium low driving capability
IDD LSE current consumption µA
LSEDRV[1:0]=10
- - 1.3
medium high driving capability
LSEDRV[1:0]=11
- - 1.6
higher driving capability
LSEDRV[1:0]=00
5 - -
lower driving capability
LSEDRV[1:0]=01
8 - -
Oscillator medium low driving capability
gm µA/V
transconductance LSEDRV[1:0]=10
15 - -
medium high driving capability
LSEDRV[1:0]=11
25 - -
higher driving capability
tSU(LSE)(3) Startup time VDD is stabilized - 2 - s
1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
2. Guaranteed by design, not tested in production.
3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

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Figure 17. Typical application with a 32.768 kHz crystal

2ESONATORWITH
INTEGRATEDCAPACITORS
#,
/3#?). F,3%
$RIVE
K( Z PROGRAMMABLE
RESONATOR AMPLIFIER

/3#?/5 4
#,

Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.

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6.3.8 Internal clock source characteristics

The parameters given in Table 42 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 22.

High-speed internal (HSI) RC oscillator

Table 42. HSI oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fHSI Frequency - 8 - MHz

TRIM HSI user trimming step - - 1(2) %
(2) (2)
DuCy(HSI) Duty cycle 45 - 55 %
TA = –40 to 105 °C –3.8(3) - 4.6(3) %
Accuracy of the HSI TA = –10 to 85 °C –2.9(3) - 2.9(3) %
ACCHSI oscillator (factory
calibrated) TA = 0 to 70 °C - - - %
TA = 25 °C –1 - 1 %
HSI oscillator startup
tsu(HSI) 1(2) - 2(2) µs
time
HSI oscillator power
IDD(HSI) - 80 100(3) µA
consumption
1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
3. Data based on characterization results, not tested in production.

Figure 18. HSI oscillator accuracy characterization results

!## (3)








-!8

-).

 4!; #=
        










-36

1. The above curves are based on characterisation results, not tested in production

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Low-speed internal (LSI) RC oscillator

Table 43. LSI oscillator characteristics(1)

Symbol Parameter Min Typ Max Unit

fLSI Frequency 30 40 50 kHz

tsu(LSI)(2) LSI oscillator startup time - - 85 µs
IDD(LSI)(2) LSI oscillator power consumption - 0.75 1.2 µA
1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.

6.3.9 PLL characteristics

The parameters given in Table 44 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 22.

Table 44. PLL characteristics

Value
Symbol Parameter Unit
Min Typ Max

PLL input clock(1) 1(2) - 24(2) MHz

fPLL_IN
(2)
PLL input clock duty cycle 40 - 60(2) %
fPLL_OUT PLL multiplier output clock 16(2) - 72 MHz
tLOCK PLL lock time - - 200(2) µs
Jitter Cycle-to-cycle jitter - - 300(2) ps
1. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
2. Guaranteed by design, not tested in production.

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6.3.10 Memory characteristics

Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Table 45. Flash memory characteristics

Symbol Parameter Conditions Min Typ Max(1) Unit

tprog 16-bit programming time TA = –40 to +105 °C 40 53.5 60 µs

tERASE Page (2 KB) erase time TA = –40 to +105 °C 20 - 40 ms
tME Mass erase time TA = –40 to +105 °C 20 - 40 ms
Write mode - - 10 mA
IDD Supply current
Erase mode - - 12 mA
1. Guaranteed by design, not tested in production.

Table 46. Flash memory endurance and data retention

Value
Symbol Parameter Conditions Unit
Min(1)

TA = –40 to +85 °C (6 suffix versions)

NEND Endurance 10 kcycles
TA = –40 to +105 °C (7 suffix versions)
1 kcycle(2) at TA = 85 °C 30
tRET (2)
Data retention 1 kcycle at TA = 105 °C 10 Years
10 kcycles(2) at TA = 55 °C 20
1. Data based on characterization results, not tested in production.
2. Cycling performed over the whole temperature range.

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6.3.11 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
● Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
● FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 47. They are based on the EMS levels and classes
defined in application note AN1709.

Table 47. EMS characteristics

Level/
Symbol Parameter Conditions
Class

VDD = 3.3 V, LQFP100, TA = +25 °C,

Voltage limits to be applied on any I/O pin to
VFESD fHCLK = 72 MHz 3B
induce a functional disturbance
conforms to IEC 61000-4-2
Fast transient voltage burst limits to be VDD = 3.3 V, LQFP100, TA = +25 °C,
VEFTB applied through 100 pF on VDD and VSS fHCLK = 72 MHz 4A
pins to induce a functional disturbance conforms to IEC 61000-4-4

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
● Corrupted program counter
● Unexpected reset
● Critical Data corruption (control registers...)

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Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.

Table 48. EMI characteristics

Max vs. [fHSE/fHCLK]
Monitored
Symbol Parameter Conditions Unit
frequency band
8/72 MHz

0.1 to 30 MHz 7
VDD = 3.3 V, TA = 25 °C,
LQFP100 package 30 to 130 MHz 20 dBµV
SEMI Peak level
compliant with IEC 130 MHz to 1GHz 27
61967-2
SAE EMI Level 4 -

6.3.12 Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.

Table 49. ESD absolute maximum ratings

Symbol Ratings Conditions Class Maximum value(1) Unit

Electrostatic discharge TA = +25 °C, conforming

VESD(HBM) 2 2000
voltage (human body model) to JESD22-A114
V
Electrostatic discharge TA = +25 °C, conforming
VESD(CDM) II 500
voltage (charge device model) to JESD22-C101
1. Data based on characterization results, not tested in production.

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Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
● A supply overvoltage is applied to each power supply pin
● A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 50. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latch-up class TA = +105 °C conforming to JESD78A II level A

6.3.13 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into the
I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of –5 µA/+0 µA range), or other functional failure (for example reset occurrence or oscillator
frequency deviation).
The test results are given in Table 51

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Table 51. I/O current injection susceptibility

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection

Injected current on BOOT0 –0 NA

Injected current on PC0, PC1, PC2, PC3, PF2, PA0,
PA1, PA2, PA3, PF4, PA4, PA5, PA6, PA7, PC4, PC5,
–5 -
PB2 with induced leakage current on other pins from this
group less than -50 µA
Injected current on PB0, PB1, PE7, PE8, PE9, PE10,
PE11, PE12, PE13, PE14, PE15, PB12, PB13, PB14,
PB15, PD8, PD9, PD10, PD11, PD12, PD13, PD14 with –5 -
induced leakage current on other pins from this group
IINJ less than -50 µA mA
Injected current on PC0, PC1, PC2, PC3, PF2, PA0,
PA1, PA2, PA3, PF4, PA4, PA5, PA6, PA7, PC4, PC5,
PB2, PB0, PB1, PE7, PE8, PE9, PE10, PE11, PE12,
PE13, PE14, PE15, PB12, PB13, PB14, PB15, PD8, - +5
PD9, PD10, PD11, PD12, PD13, PD14 with induced
leakage current on other pins from this group less than
400 µA
Injected current on any other FT and FTf pins –5 NA
Injected current on any other pins –5 +5

Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.

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6.3.14 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 52 are derived from tests
performed under the conditions summarized in Table 22. All I/Os are CMOS and TTL
compliant.

Table 52. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

TC and TTa I/O - - 0.3 VDD+0.07 (1)

Low level input FT and FTf I/O - - 0.475 VDD-0.2 (1)

VIL
voltage BOOT0 - - 0.3 VDD–0.3 (1)
All I/Os except BOOT0 - - 0.3 VDD (2)
V
TC and TTa I/O 0.445 VDD+0.398 (1) - -

High level input FT and FTf I/O 0.5 VDD+0.2 (1) - -

VIH
voltage BOOT0 0.2 VDD+0.95 (1)
- -
(2)
All I/Os except BOOT0 0.7 VDD - -
(1)
TC and TTa I/O - 200 -
Schmitt trigger
Vhys FT and FTf I/O - 100 (1) - mV
hysteresis
(1)
BOOT0 - 300 -
TC, FT and FTf I/O
TTa I/O in digital mode - - ±0.1
VSS ≤ VIN ≤ VDD
TTa I/O in digital mode
Input leakage - - 1
Ilkg VDD ≤ VIN ≤ VDDA µA
current (3)
TTa I/O in analog mode
- - ±0.2
VSS ≤ VIN ≤ VDDA
FT and FTf I/O(4)
- - 10
VDD ≤ VIN ≤ 5 V
Weak pull-up
RPU VIN = VSS 25 40 55 kΩ
equivalent resistor(5)
Weak pull-down
RPD VIN = VDD 25 40 55 kΩ
equivalent resistor(5)
CIO I/O pin capacitance - 5 - pF
1. Data based on design simulation.
2. Tested in production.
3. Leakage could be higher than the maximum value. if negative current is injected on adjacent pins. Refer to Table 51: I/O
current injection susceptibility.
4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimum (~10% order).

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All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 19 and Figure 20 for standard I/Os.

Figure 19. TC and TTa I/O input characteristics - CMOS port

VIL/VIH (V)
VDD
min = 0.7
ements VIH
requir 98
dard +0.3 ns
S stan 5V DD imulatio
CMO = 0.44 n s
VIHmin 2.0 V IHmin on desig
d
uction Base
in prod
Tested 0.07imulatio
ns
D+
= 0.3V Design s
1.3 V ILma ed on d
x

Bas
Area not determined

CMOS standard requirements VILmax = 0.3VDD

VILmax 0.7
ion
0.6 in product
Tested
VDD (V)
2.0 2.7 3.0 3.3 3.6

MS30255V2

Figure 20. TC and TTa I/O input characteristics - TTL port

VIL/VIH (V)

98 ns
+0.3 tio
45V DD simula
TTL standard requirements VIHmin = 2 V = 0.4 n
VIHmin 2.0 V IHmin on desig
d
Base
s
D+
0.07 ulation
x=
0.3V D sign sim
1.3 V IL m a d e
d on
Area not determined Base

VILmax 0.8
0.7 TTL standard requirements VILmax = 0.8 V
VDD (V)
2.0 2.7 3.0 3.3 3.6

MS30256V2

Figure 21. Five volt tolerant (FT and FTf) I/O input characteristics - CMOS port

VIL/VIH (V)

7 VDD
VIHmin = 0. 0.2 ulations
irements V DD+
an dard requ = 0.5 sign sim
CMOS st V IHmin e
2.0 on d
production B ased
Tested in
-0.2 tions
75V DD simula
Area not determined = 0.4 ign
1.0 V ILmax on des
d
Base

CMOS standard requirements VILmax = 0.3VDD

oduction
Tested in pr
0.5
VDD (V)
2.0 3.6

MS30257V2

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Figure 22. Five volt tolerant (FT and FTf) I/O input characteristics - TTL port

VIL/VIH (V)

0.2 ns
V DD+ simulatio
TTL standard requirements VIHmin = 2 V = 0.5 n
2.0 V IHmin n desig
d o
Base
Area not determined -0.2 tions
75V DDn simula
= 0.4 ig
1.0 V ILmin d on des
Base
0.8
TTL standard requirements VILmax = 0.8 V

0.5
VDD (V)
2.0 2.7 3.6

MS30258V2

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Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to +/-8 mA, and sink or
source up to +/- 20 mA (with a relaxed VOL/VOH).
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2:
● The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD(Σ) (see Table 20).
● The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
IVSS(Σ) (see Table 20).

Output voltage levels

Unless otherwise specified, the parameters given in Table 53 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 22. All I/Os (FT, TTa and Tc unless otherwise specified) are CMOS and TTL
compliant.

Table 53. Output voltage characteristics

Symbol Parameter Conditions Min Max Unit

VOL(1) Output low level voltage for an I/O pin CMOS port(2) - 0.4
IIO = +8 mA
VOH(3) Output high level voltage for an I/O pin 2.7 V < VDD < 3.6 V VDD–0.4 -

VOL (1) Output low level voltage for an I/O pin TTL port(2) - 0.4
IIO =+ 8mA
VOH (3) Output high level voltage for an I/O pin 2.7 V < VDD < 3.6 V 2.4 -

VOL(1)(4) Output low level voltage for an I/O pin IIO = +20 mA - 1.3 V
VOH(3)(4) Output high level voltage for an I/O pin 2.7 V < VDD < 3.6 V VDD–1.3 -
VOL(1)(4) Output low level voltage for an I/O pin IIO = +6 mA - 0.4
VOH(3)(4) Output high level voltage for an I/O pin 2 V < VDD < 2.7 V VDD–0.4 -
Output low level voltage for an FTf I/O pin in IIO = +20 mA
VOLFM+(1)(4) - 0.4
FM+ mode 2.7 V < VDD < 3.6 V
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 20 and the sum of
IIO (I/O ports and control pins) must not exceed ΣIIO(PIN).
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in Table 20 and the sum
of IIO (I/O ports and control pins) must not exceed ΣIIO(PIN).
4. Data based on design simulation.

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Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 23 and
Table 54, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 22.

Table 54. I/O AC characteristics(1)

OSPEEDRy [1:0]
Symbol Parameter Conditions Min Max Unit
value(1)

fmax(IO)out Maximum frequency(2) CL = 50 pF, VDD = 2 V to 3.6 V - 2(3) MHz

Output high to low level fall
tf(IO)out - 125(3)
x0 time
CL = 50 pF, VDD = 2 V to 3.6 V ns
Output low to high level (3)
tr(IO)out - 125
rise time
fmax(IO)out Maximum frequency(2) CL = 50 pF, VDD = 2 V to 3.6 V - 10(3) MHz
Output high to low level fall
tf(IO)out - 25(3)
01 time
CL = 50 pF, VDD = 2 V to 3.6 V ns
Output low to high level (3)
tr(IO)out - 25
rise time
CL = 30 pF, VDD = 2.7 V to 3.6 V - 50(3) MHz
fmax(IO)out Maximum frequency(2) CL = 50 pF, VDD = 2.7 V to 3.6 V - 30(3) MHz
CL = 50 pF, VDD = 2 V to 2.7 V - 20(3) MHz
CL = 30 pF, VDD = 2.7 V to 3.6 V - 5(3)
Output high to low level fall
11 tf(IO)out CL = 50 pF, VDD = 2.7 V to 3.6 V - 8(3)
time
CL = 50 pF, VDD = 2 V to 2.7 V - 12(3)
ns
CL = 30 pF, VDD = 2.7 V to 3.6 V - 5(3)
Output low to high level
tr(IO)out CL = 50 pF, VDD = 2.7 V to 3.6 V - 8(3)
rise time
CL = 50 pF, VDD = 2 V to 2.7 V - 12(3)
fmax(IO)out Maximum frequency(2) - 2(4) MHz
Output high to low level fall
FM+ tf(IO)out - 12(4)
time CL = 50 pF, VDD = 2 V to 3.6 V
configuration(4) ns
Output low to high level
tr(IO)out - 34(4)
rise time
Pulse width of external
- tEXTIpw signals detected by the 10(3) - ns
EXTI controller
1. The I/O speed is configured using the OSPEEDRx[1:0] bits. Refer to the RM0316 reference manual for a description of
GPIO Port configuration register.
2. The maximum frequency is defined in Figure 23.
3. Guaranteed by design, not tested in production.
4. The I/O speed configuration is bypassed in FM+ I/O mode. Refer to the STM32F30xB/C reference manual RM0316 for a
description of FM+ I/O mode configuration.

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Figure 23. I/O AC characteristics definition

90% 10%
50% 50%
10% 90%

EXT ERNAL tr(I O)out tr(I O)out

OUTPUT
ON 50pF T

Maximum frequency is achieved if (tr + tf) ≤ 2/3)T and if the duty cycle is (45-55%)
when loaded by 50pF
ai14131

6.3.15 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 52).
Unless otherwise specified, the parameters given in Table 55 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 22.

Table 55. NRST pin characteristics

Symbol Parameter Conditions Min Typ Max Unit

0.3VDD+
VIL(NRST)(1) NRST Input low level voltage - -
0.07(1)
V
0.445VDD+
VIH(NRST)(1) NRST Input high level voltage - -
0.398(1)
Vhys(NRST) NRST Schmitt trigger voltage hysteresis - 200 - mV
RPU Weak pull-up equivalent resistor(2) VIN = VSS 25 40 55 kΩ
(1)
VF(NRST) NRST Input filtered pulse - - 100 ns
VNF(NRST)(1) NRST Input not filtered pulse 500 - - ns
1. Guaranteed by design, not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance must be minimum (~10% order).

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Figure 24. Recommended NRST pin protection

6$$
%XTERNAL
RESETCIRCUIT
205 )NTERNAL2ESET
.234
&ILTER
—&

-36

1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 55. Otherwise the reset will not be taken into account by the device.

6.3.16 Timer characteristics

Symbol Parameter Conditions Min Typ Max Unit

0.475VDDA
VIL(NPOR)(1) NPOR Input low level voltage
- 0.2
V
0.5VDDA
VIH(NPOR)(1) NPOR Input high level voltage
+ 0.2
NPOR Schmitt trigger voltage
Vhys(NPOR)(1) 200 mV
hysteresis
RPU Weak pull-up equivalent resistor(2) VIN = VSS 25 40 55 kΩ
1. Guaranteed by design, not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to
the series resistance is minimal (~10% order).

The parameters given in Table 56 are guaranteed by design.

Refer to Section 6.3.14: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).

Table 56. TIMx(1) characteristics

Symbol Parameter Conditions Min Max Unit

1 - tTIMxCLK

fTIMxCLK = 72 MHz
13.9 - ns
tres(TIM)(2) Timer resolution time (except TIM1/8)
fTIMxCLK = 144 MHz,
6.95 - ns
x= 1.8

Timer external clock 0 fTIMxCLK/2 MHz

fEXT(2)
frequency on CH1 to CH4 fTIMxCLK = 72 MHz 0 36 MHz
TIMx (except TIM2) - 16
ResTIM(2) Timer resolution bit
TIM2 - 32

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Table 56. TIMx(1) characteristics (continued)

Symbol Parameter Conditions Min Max Unit

1 65536 tTIMxCLK

fTIMxCLK = 72 MHz
0.0139 910 µs
tCOUNTER(2) 16-bit counter clock period (except TIM1/8)
fTIMxCLK = 144 MHz,
0.0069 455 µs
x= 1.8
- 65536 × 65536 tTIMxCLK

tMAX_COUNT Maximum possible count fTIMxCLK = 72 MHz - 59.65 s

(2) with 32-bit counter
fTIMxCLK = 144 MHz,
- 29.825 s
x= 1.8
1. TIMx is used as a general term to refer to the TIM1, TIM2, TIM3, TIM4, TIM8, TIM15, TIM16 and TIM17
timers
2. Guaranteed by design, not tested in production.

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Table 57. IWDG min/max timeout period at 40 kHz (LSI) (1)

Min timeout (ms) RL[11:0]= Max timeout (ms) RL[11:0]=
Prescaler divider PR[2:0] bits
0x000 0xFFF

/4 0 0.1 409.6
/8 1 0.2 819.2
/16 2 0.4 1638.4
/32 3 0.8 3276.8
/64 4 1.6 6553.6
/128 5 3.2 13107.2
/256 7 6.4 26214.4
1. These timings are given for a 40 kHz clock but the microcontroller’s internal RC frequency can vary from 30
to 60 kHz. Moreover, given an exact RC oscillator frequency, the exact timings still depend on the phasing
of the APB interface clock versus the LSI clock so that there is always a full RC period of uncertainty.

Table 58. WWDG min-max timeout value @72 MHz (PCLK)

Prescaler WDGTB Min timeout value Max timeout value

1 0 0.05687 (1) 3.6409 (1)

2 1 0.1137 (1) 7.2817 (1)
4 2 0.2275 (1) 14.564 (1)
8 3 0.4551 (1) 29.127 (1)
1. Guaranteed by design, not tested in production.

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6.3.17 Communications interfaces

I2C interface characteristics
Unless otherwise specified, the parameters given in Table 59 are derived from tests
performed under ambient temperature, fPCLK1 frequency and VDD supply voltage conditions
summarized in Table 22.
The I2C interface meets the requirements of the standard I2C communication protocol with
the following restrictions: the I/O pins SDA and SCL are mapped to are not “true” open-
drain. When configured as open-drain, the PMOS connected between the I/O pin and VDD is
disabled, but is still present.
The I2C characteristics are described in Table 59. Refer also to Section 6.3.14: I/O port
characteristics for more details on the input/output alternate function characteristics (SDA
and SCL).

Table 59. I2C characteristics(1)

Standard
Fast mode Fast Mode Plus
mode
Symbol Parameter Unit
Min Max Min Max Min Max

tw(SCLL) SCL clock low time 4.7 - 1.3 - 0.5 -

µs
tw(SCLH) SCL clock high time 4.0 - 0.6 - 0.26 -
tsu(SDA) SDA setup time 250 - 100 - 50 -
th(SDA) SDA data hold time 0(3) 3450(2) 0(3) 900(2) 0 450
tr(SDA) ns
SDA and SCL rise time - 1000 - 300 - 120
tr(SCL)
tf(SDA)
SDA and SCL fall time - 300 - 300 - 120
tf(SCL)
th(STA) Start condition hold time 4.0 - 0.6 - 0.26 -
µs
tsu(STA) Repeated Start condition setup time 4.7 - 0.6 - 0.26 -
tsu(STO) Stop condition setup time 4.0 - 0.6 - 0.26 - μs
tw(STO:STA) Stop to Start condition time (bus free) 4.7 - 1.3 - 0.5 - μs
Cb Capacitive load for each bus line - 400 - 400 - 550 pF
1. The I2C characteristics are the requirements from I2C bus specification rev03. They are guaranteed by design when
I2Cx_TIMING register is correctly programmed (Refer to reference manual). These characteristics are not tested in
production.
2. The maximum Data hold time has only to be met if the interface does not stretch the low period of SCL signal.
3. The device must internally provide a hold time of at least 300ns for the SDA signal in order to bridge the undefined region of
the falling edge of SCL.

Table 60. I2C analog filter characteristics(1)

Symbol Parameter Min Max Unit

Pulse width of spikes that are

tSP 50 260 ns
suppressed by the analog filter
1. Guaranteed by design, not tested in production.

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STM32F302xx/STM32F303xx Electrical characteristics

Figure 25. I2C bus AC waveforms and measurement circuit

6$$ 6$$

2 2 -#5
Ω
3$!
)#BUS Ω
3#,

3 4!242%0%!4%$

3 4!24

TSU34! 3 4!24

3$!
TF3$! TR3$! TSU3$!
3 4/0 TW34/34!
TH34! TW3#,, TH3$!

3#,
TW3#,( TR3#, TF3#, TSU34/
-36

1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD.

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Electrical characteristics STM32F302xx/STM32F303xx

SPI/I2S characteristics
Unless otherwise specified, the parameters given in Table 61 for SPI or in Table 62 for I2S
are derived from tests performed under ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Table 22.
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI and WS, CK, SD for I2S).

Table 61. SPI characteristics

Symbol Parameter Conditions Min Max Unit

fSCK Master mode - 18

SPI clock frequency MHz
1/tc(SCK)(1) Slave mode - 18
tr(SCK) SPI clock rise and fall
Capacitive load: C = 30 pF - 8 ns
tf(SCK)(1) time
SPI slave input clock
DuCy(SCK)(1) Slave mode 30 70 %
duty cycle
tsu(NSS)(1) NSS setup time Slave mode 2Tpclk -
th(NSS)(1) NSS hold time Slave mode 4Tpclk -
tw(SCKH) (1) Master mode, fPCLK = 36 MHz, Tpclk/2 Tpclk/2
SCK high and low time
tw(SCKL)(1) presc = 4 -3 +3

tsu(MI) (1) Master mode 5.5 -

Data input setup time
tsu(SI)(1) Slave mode 6.5 -
th(MI) (1) Master mode 5 -
Data input hold time ns
th(SI)(1) Slave mode 5 -
ta(SO)(1)(2) Data output access time Slave mode, fPCLK = 24 MHz 0 4Tpclk
tdis(SO)(1)(3) Data output disable time Slave mode 0 24
(1)
tv(SO) Data output valid time Slave mode (after enable edge) - 39
tv(MO)(1) Data output valid time Master mode (after enable edge) - 3
th(SO)(1) Slave mode (after enable edge) 15 -
Data output hold time
th(MO)(1) Master mode (after enable edge) 4 -
1. Data based on characterization results, not tested in production.
2. Min time is for the minimum time to drive the output and the max time is for the maximum time to validate
the data.
3. Min time is for the minimum time to invalidate the output and the max time is for the maximum time to put
the data in Hi-Z.

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STM32F302xx/STM32F303xx Electrical characteristics

Figure 26. SPI timing diagram - slave mode and CPHA = 0

NSS input

tc(SCK)

tSU(NSS) th(NSS)

CPHA= 0
SCK Input

CPOL=0
tw(SCKH)
CPHA= 0 tw(SCKL)
CPOL=1

ta(SO) tv(SO) th(SO) tr(SCK) tdis(SO)

tf(SCK)
MISO
OUT P UT MS B O UT BI T6 OUT LSB OUT
tsu(SI)
MOSI
M SB IN B I T1 IN LSB IN
I NPUT
th(SI)
ai14134c

Figure 27. SPI timing diagram - slave mode and CPHA = 1(1)

NSS input
tSU(NSS) tc(SCK) th(NSS)

CPHA=1
SCK Input

CPOL=0
tw(SCKH)
CPHA=1 tw(SCKL)
CPOL=1

tv(SO) th(SO) tr(SCK) tdis(SO)

ta(SO) tf(SCK)
MISO
OUT P UT MS B O UT BI T6 OUT LSB OUT
tsu(SI) th(SI)
MOSI
M SB IN B I T1 IN LSB IN
I NPUT

ai14135

1. Measurement points are done at 0.5VDD and with external CL = 30 pF.

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Electrical characteristics STM32F302xx/STM32F303xx

Figure 28. SPI timing diagram - master mode(1)

(IGH

.33INPUT

TC3#+
3#+/UTPUT

#0(! 
#0/,
#0(! 
#0/,
3#+/UTPUT

#0(!
#0/,
#0(!
#0/,

TW3#+( TR3#+
TSU-) TW3#+, TF3#+
-)3/
).0 54 -3 "). ") 4). ,3").

TH-)
-/3)
- 3"/54 " ) 4/54 ,3"/54
/54054
TV-/ TH-/

AI6

1. Measurement points are done at 0.5VDD and with external CL = 30 pF.

Table 62. I2S characteristics

Symbol Parameter Conditions Min Max Unit

Master data: 16 bits,

fCK 1.496 1.503
I2S clock frequency audio freq=48 kHz MHz
1/tc(CK)(1)
Slave 0 12.288
2
tr(CK) I S clock rise and fall Capacitive load
- 8
tf(CK)(1) time CL = 30 pF
tw(CKH) (1) I2S clock high time Master fPCLK= 36 MHz, 331 -
audio frequency =
tw(CKL) (1) I2S clock low time 48 kHz 332 -
ns
tv(WS) (1) WS valid time Master mode 4 -
th(WS) (1) WS hold time Master mode 4 -
(1)
tsu(WS) WS setup time Slave mode 4 -
th(WS) (1) WS hold time Slave mode 0 -
I2S slave input clock
Duty Cycle(1) Slave mode 30 70 %
duty cycle

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STM32F302xx/STM32F303xx Electrical characteristics

Table 62. I2S characteristics (continued)

Symbol Parameter Conditions Min Max Unit
(1)
tsu(SD_MR) Data input setup time Master receiver 9
tsu(SD_SR) (1) Data input setup time Slave receiver 2
th(SD_MR)(1) Master receiver 0
Data input hold time
(1)
th(SD_SR) Slave receiver 0
Slave transmitter
tv(SD_ST) (1) Data output valid time 29
(after enable edge) ns
Slave transmitter
th(SD_ST) (1) Data output hold time 12
(after enable edge)
Master transmitter
tv(SD_MT) (1) Data output valid time 3
(after enable edge)
Master transmitter
th(SD_MT) (1) Data output hold time 2
(after enable edge)
1. Data based on characterization results, not tested in production.

Figure 29. I2S slave timing diagram (Philips protocol)(1)

tc(CK)

CPOL = 0
CK Input

CPOL = 1

tw(CKH) tw(CKL) th(WS)

WS input

tsu(WS) tv(SD_ST) th(SD_ST)

SDtransmit
LSB transmit(2) MSB transmit Bitn transmit LSB transmit

tsu(SD_SR) th(SD_SR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

ai14881b

1. Measurement points are done at 0.5VDD and with external CL=30 pF

2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

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Electrical characteristics STM32F302xx/STM32F303xx

Figure 30. I2S master timing diagram (Philips protocol)(1)

tf(CK) tr(CK)

tc(CK)
CK output

CPOL = 0
tw(CKH)

CPOL = 1
tv(WS) tw(CKL) th(WS)

WS output

tv(SD_MT) th(SD_MT)

SDtransmit LSB transmit(2) MSB transmit Bitn transmit LSB transmit

tsu(SD_MR) th(SD_MR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

ai14884b

1. Measurement points are done at 0.5VDD and with external CL=30 pF

2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

USB characteristics

Table 63. USB startup time

Symbol Parameter Max Unit

tSTARTUP(1) USB transceiver startup time 1 µs

1. Guaranteed by design, not tested in production.

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STM32F302xx/STM32F303xx Electrical characteristics

Table 64. USB DC electrical characteristics

Symbol Parameter Conditions Min.(1) Max.(1) Unit

Input levels

VDD USB operating voltage(2) 3.0(3) 3.6 V

VDI(4) Differential input sensitivity I(USB_DP, USB_DM) 0.2 -
VCM(4) Differential common mode range Includes VDI range 0.8 2.5 V
VSE(4) Single ended receiver threshold 1.3 2.0

Output levels

VOL Static output level low RL of 1.5 kΩ to 3.6 V(5) - 0.3

V
VOH Static output level high RL of 15 kΩ to VSS(5) 2.8 3.6
1. All the voltages are measured from the local ground potential.
2. To be compliant with the USB 2.0 full-speed electrical specification, the USB_DP (D+) pin should be pulled
up with a 1.5 kΩ resistor to a 3.0-to-3.6 V voltage range.
3. The STM32F3xxx USB functionality is ensured down to 2.7 V but not the full USB electrical characteristics
which are degraded in the 2.7-to-3.0 V VDD voltage range.
4. Guaranteed by design, not tested in production.
5. RL is the load connected on the USB drivers

Figure 31. USB timings: definition of data signal rise and fall time
Crossover
points
Differen tial
Data L ines
VCRS

VS S
tf tr
ai14137

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Electrical characteristics STM32F302xx/STM32F303xx

Table 65. USB: Full-speed electrical characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Driver characteristics

tr Rise time(2) CL = 50 pF 4 - 20 ns
(2)
tf Fall time CL = 50 pF 4 - 20 ns
trfm Rise/ fall time matching tr/tf 90 - 110 %
VCRS Output signal crossover voltage 1.3 - 2.0 V
Output driver
Z driving high and low 28 40 44 Ω
Impedance(3) DRV
1. Guaranteed by design, not tested in production.
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB Specification - Chapter
7 (version 2.0).
3. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-), the matching impedance is
already included in the embedded driver.

CAN (controller area network) interface

Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (CAN_TX and CAN_RX).

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STM32F302xx/STM32F303xx Electrical characteristics

6.3.18 ADC characteristics

Unless otherwise specified, the parameters given in Table 66 to Table 69 are guaranteed by
design, with conditions summarized in Table 22.

Table 66. ADC characteristics

Symbol Parameter Conditions Min Typ Max Unit

Analog supply voltage for

VDDA 2 - 3.6 V
ADC
fADC ADC clock frequency 0.14 - 72 MHz
Resolution = 12 bits,
0.01 - 5.14
Fast Channel
Resolution = 10 bits,
0.012 - 6
Fast Channel
fS(1) Sampling rate MSPS
Resolution = 8 bits,
0.014 - 7.2
Fast Channel
Resolution = 6 bits,
0.0175 - 9
Fast Channel
fADC = 72 MHz
- - 5.14 MHz
fTRIG(1) External trigger frequency Resolution = 12 bits
Resolution = 12 bits - - 14 1/fADC
VAIN Conversion voltage range 0 - VDDA V
RAIN (1)
External input impedance - - 100 kΩ
Internal sample and hold
CADC(1) - 5 - pF
capacitor
fADC = 72 MHz 1.56 µs
tCAL(1) Calibration time
112 1/fADC
CKMODE = 00 1.5 2 2.5 1/fADC
Trigger conversion latency
Regular and injected CKMODE = 01 - - 2 1/fADC
tlatr(1)
channels without conversion CKMODE = 10 - - 2.25 1/fADC
abort
CKMODE = 11 - - 2.125 1/fADC
CKMODE = 00 2.5 3 3.5 1/fADC
Trigger conversion latency CKMODE = 01 - - 3 1/fADC
tlatrinj(1) Injected channels aborting a
regular conversion CKMODE = 10 - - 3.25 1/fADC
CKMODE = 11 - - 3.125 1/fADC
fADC = 72 MHz 0.021 - 8.35 µs
tS(1) Sampling time
1.5 - 601.5 1/fADC

TADCVREG ADC Voltage Regulator

(1) - - 10 µs
_STUP Start-up time
fADC = 72 MHz
0.19 - 3.5 µs
Total conversion time Resolution = 12 bits
tCONV(1)
(including sampling time) 14 to 252 (tS for sampling + 12.5 for
Resolution = 12 bits 1/fADC
successive approximation)
1. Data guaranteed by design

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Electrical characteristics STM32F302xx/STM32F303xx

Table 67. Maximum ADC RAIN

RAIN max (kΩ)
Sampling Sampling
Resolution cycle @ time [ns] @
Fast Slow Other
72 MHz 72 MHz
channels(1) channels channels(2)

1.5 20.83 0.018 NA NA

2.5 34.72 0.150 NA 0.022
4.5 62.50 0.470 0.220 0.180
7.5 104.17 0.820 0.560 0.470
12 bits
19.5 270.83 2.70 1.80 1.50
61.5 854.17 8.20 6.80 4.70
181.5 2520.83 22.0 18.0 15.0
601.5 8354.17 82.0 68.0 47.0
1.5 20.83 0.082 NA NA
2.5 34.72 0.270 0.082 0.100
4.5 62.50 0.560 0.390 0.330
7.5 104.17 1.20 0.82 0.68
10 bits
19.5 270.83 3.30 2.70 2.20
61.5 854.17 10.0 8.2 6.8
181.5 2520.83 33.0 27.0 22.0
601.5 8354.17 100.0 82.0 68.0
1.5 20.83 0.150 NA 0.039
2.5 34.72 0.390 0.180 0.180
4.5 62.50 0.820 0.560 0.470
7.5 104.17 1.50 1.20 1.00
8 bits
19.5 270.83 3.90 3.30 2.70
61.5 854.17 12.00 12.00 8.20
181.5 2520.83 39.00 33.00 27.00
601.5 8354.17 100.00 100.00 82.00
1.5 20.83 0.270 0.100 0.150
2.5 34.72 0.560 0.390 0.330
4.5 62.50 1.200 0.820 0.820
7.5 104.17 2.20 1.80 1.50
6 bits
19.5 270.83 5.60 4.70 3.90
61.5 854.17 18.0 15.0 12.0
181.5 2520.83 56.0 47.0 39.0
601.5 8354.17 100.00 100.0 100.0
1. All fast channels, expect channels on PA2, PA6, PB1, PB12.
2. Channels available on PA2, PA6, PB1 and PB12.

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STM32F302xx/STM32F303xx Electrical characteristics

Table 68. ADC accuracy - limited test conditions (1)(2)

Min
Symbol Parameter Conditions (3) Typ Max(3) Unit

Fast channel 5.1 Ms - ±3.5 ±6

Single ended
Total Slow channel 4.8 Ms - ±4.5 ±7
ET unadjusted
error Fast channel 5.1 Ms - ±3.5 ±6
Differential
Slow channel 4.8 Ms - ±3.5 ±6
Fast channel 5.1 Ms - ±1 ±5
Single ended
Slow channel 4.8 Ms - ±1 ±5
EO Offset error
Fast channel 5.1 Ms - ±1 ±3
Differential
Slow channel 4.8 Ms - ±1 ±3
Fast channel 5.1 Ms - ±3 ±6
Single ended
Slow channel 4.8 Ms - ±4 ±6
EG Gain error LSB
Fast channel 5.1 Ms - ±1 ±2
Differential
Slow channel 4.8 Ms - ±1.5 ±3
Fast channel 5.1 Ms - ±1 ±1
Single ended
Differential ADC clock freq. Slow channel 4.8 Ms - ±1 ±1.5
ED linearity ≤ 72 MHz
error Fast channel 5.1 Ms - ±1 ±1
Sampling freq ≤ 5 Differential
Msps Slow channel 4.8 Ms - ±1 ±1
VDDA = VREF+ = 3.3 V Fast channel 5.1 Ms - ±1.5 ±3
25°C Single ended
Integral Slow channel 4.8 Ms - ±2 ±3
EL linearity
error Fast channel 5.1 Ms - ±1 ±2
Differential
Slow channel 4.8 Ms - ±1 ±2

Fast channel 5.1 Ms 10.3 10.7

-
Single ended
Effective Slow channel 4.8 Ms 10.4 10.7
-
ENOB number of bits
bits Fast channel 5.1 Ms 10.9 11.3
-
Differential
Slow channel 4.8 Ms 10.9 11.3
-
Fast channel 5.1 Ms 64 66 -
Signal-to- Single ended
noise and Slow channel 4.8 Ms 65 66 -
SINAD dB
distortion Fast channel 5.1 Ms 67 70 -
ratio Differential
Slow channel 4.8 Ms 67 70 -

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Electrical characteristics STM32F302xx/STM32F303xx

Table 68. ADC accuracy - limited test conditions (1)(2) (continued)

Min
Symbol Parameter Conditions (3) Typ Max(3) Unit

Fast channel 5.1 Ms 64 67

-
Single ended
Slow channel 4.8 Ms 65 67
Signal-to- -
SNR ADC clock freq. ≤ 72
noise ratio
MHz Fast channel 5.1 Ms 68 70
-
Sampling freq ≤ 5 Differential
dB
Msps Slow channel 4.8 Ms 69 70
VDDA = VREF+ = 3.3 V -
25°C Fast channel 5.1 Ms - −75 −72
Single ended
Total Slow channel 4.8 Ms - −72 −70
THD harmonic
distortion Fast channel 5.1 Ms - −80 −74
Differential
Slow channel 4.8 Ms - −76 −71
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.14 does not affect the ADC
accuracy.
3. Data based on characterization results, not tested in production.

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STM32F302xx/STM32F303xx Electrical characteristics

Table 69. ADC accuracy (1)(2)(3)

Symbol Parameter Conditions Min (4) Max(4) Unit

Fast channel 5.1 Ms - ±7

Single Ended
Total Slow channel 4.8 Ms - ±7
ET unadjusted
error Fast channel 5.1 Ms - ±7
Differential
Slow channel 4.8 Ms - ±7
Fast channel 5.1 Ms - ±5
Single Ended
Slow channel 4.8 Ms - ±5
EO Offset error
Fast channel 5.1 Ms - ±4
Differential
Slow channel 4.8 Ms - ±4
Fast channel 5.1 Ms - ±7
Single Ended
Slow channel 4.8 Ms - ±7
EG Gain error LSB
Fast channel 5.1 Ms - ±3
Differential
ADC clock freq. Slow channel 4.8 Ms - ±3
≤ 72 MHz,
Fast channel 5.1 Ms - ±1.5
Sampling freq. ≤ 5 Single Ended
Differential Msps Slow channel 4.8 Ms - ±1.5
ED
linearity error 2V ≤ VDDA , VREF+ ≤ Fast channel 5.1 Ms - ±1.5
3.6 V Differential
Slow channel 4.8 Ms - ±1
Fast channel 5.1 Ms - ±3
Single Ended
Integral Slow channel 4.8 Ms - ±3
EL
linearity error Fast channel 5.1 Ms - ±2
Differential
Slow channel 4.8 Ms - ±2

Fast channel 5.1 Ms 10.2

-
Single Ended
Slow channel 4.8 Ms 10.2
Effective -
ENOB bits
number of bits
Fast channel 5.1 Ms 10.8
-
Differential
Slow channel 4.8 Ms 10.8
-

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Electrical characteristics STM32F302xx/STM32F303xx

Table 69. ADC accuracy (1)(2)(3) (continued)

Symbol Parameter Conditions Min (4) Max(4) Unit

Fast channel 5.1 Ms - 63

Single Ended
Signal-to- Slow channel 4.8 Ms - 63
SINAD noise and
distortion ratio Fast channel 5.1 Ms - 67
Differential
Slow channel 4.8 Ms - 67

Fast channel 5.1 Ms 64

-
ADC clock freq. Single Ended
≤ 72 MHz, Slow channel 4.8 Ms 64
Signal-to- Sampling freq. ≤ 5 -
SNR dB
noise ratio Msps,
Fast channel 5.1 Ms 67
2V ≤ VDDA , VREF+ ≤ -
3.6 V Differential
Slow channel 4.8 Ms 67
-
Fast channel 5.1 Ms - −71
Single Ended
Total Slow channel 4.8 Ms - −69
THD harmonic
distortion Fast channel 5.1 Ms - −73
Differential
Slow channel 4.8 Ms - −70
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.14 does not affect the ADC
accuracy.
3. Better performance may be achieved in restricted VDDA, frequency and temperature ranges.
4. Data based on characterization results, not tested in production.

Figure 32. ADC accuracy characteristics

V V
[1LSBIDEAL = REF+ (or DDA depending on package)]
4096 4096
EG
(1) Example of an actual transfer curve
4095
(2) The ideal transfer curve
4094 (3) End point correlation line
4093
(2)
ET=Total Unadjusted Error: maximum deviation
ET between the actual and the ideal transfer curves.
7 (3) EO=Offset Error: deviation between the first actual
(1) transition and the first ideal one.
6
EG=Gain Error: deviation between the last ideal
5 transition and the last actual one.
EO EL ED=Differential Linearity Error: maximum deviation
4 between actual steps and the ideal one.
3 EL=Integral Linearity Error: maximum deviation
ED between any actual transition and the end point
2 correlation line.
1 LSBIDEAL
1

0 1 2 3 4 5 6 7 4093 4094 4095 4096

VSSA VDDA ai14395b

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STM32F302xx/STM32F303xx Electrical characteristics

Figure 33. Typical connection diagram using the ADC

6$$!
Sample and hold ADC
VT converter
0.6 V
RAIN(1) AINx
RADC
12-bit
converter
IL±1 μA
Cparasitic VT
VAIN 0.6 V
CADC

-36

1. Refer to Table 66 for the values of RAIN.

2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 7 pF). A high Cparasitic value will downgrade conversion accuracy. To remedy
this, fADC should be reduced.

General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 11. The 10 nF capacitor
should be ceramic (good quality) and it should be placed as close as possible to the chip.

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Electrical characteristics STM32F302xx/STM32F303xx

6.3.19 DAC electrical specifications

Table 70. DAC characteristics

Symbol Parameter Min Typ Max Unit Comments

Analog supply voltage for

VDDA 2.4 - 3.6 V
DAC ON
RLOAD(1) Resistive load with buffer ON 5 - - kΩ
When the buffer is OFF, the Minimum
(1) Impedance output with buffer resistive load between DAC_OUT
RO - - 15 kΩ
OFF and VSS to have a 1% accuracy is
1.5 MΩ
Maximum capacitive load at
CLOAD(1) Capacitive load - - 50 pF DAC_OUT pin (when the buffer is
ON).
It gives the maximum output
DAC_OUT Lower DAC_OUT voltage excursion of the DAC.
0.2 - - V
min(1) with buffer ON
It corresponds to 12-bit input code
(0x0E0) to (0xF1C) at VDDA = 3.6 V
DAC_OUT Higher DAC_OUT voltage and (0x155) and (0xEAB) at VDDA =
- - VDDA – 0.2 V
max(1) with buffer ON 2.4 V
DAC_OUT Lower DAC_OUT voltage
- 0.5 - mV
min(1) with buffer OFF It gives the maximum output
DAC_OUT Higher DAC_OUT voltage excursion of the DAC.
- - VDDA – 1LSB V
max(1) with buffer OFF
With no load, middle code (0x800) on
DAC DC current - - 380 µA
the input
IDDA(3) consumption in quiescent
mode (Standby mode)(2) With no load, worst code (0xF1C) on
- - 480 µA
the input

Differential non linearity - - ±0.5 LSB Given for a 10-bit input code
DNL(3) Difference between two
consecutive code-1LSB)
- - ±2 LSB Given for a 12-bit input code
Integral non linearity - - ±1 LSB Given for a 10-bit input code
(difference between
measured value at Code i
INL(3)
and the value at Code i on a - - ±4 LSB Given for a 12-bit input code
line drawn between Code 0
and last Code 1023)
- - ±10 mV
Offset error
(difference between Given for a 10-bit input code at VDDA
- - ±3 LSB
Offset(3) measured value at Code = 3.6 V
(0x800) and the ideal value =
Given for a 12-bit input code at VDDA
VDDA/2) - - ±12 LSB
= 3.6 V
Gain
Gain error - - ±0.5 % Given for a 12-bit input code
error(3)

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STM32F302xx/STM32F303xx Electrical characteristics

Table 70. DAC characteristics (continued)

Symbol Parameter Min Typ Max Unit Comments

Settling time (full scale: for a

10-bit input code transition
(3) between the lowest and the
tSETTLING - 3 4 µs CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ
highest input codes when
DAC_OUT reaches final
value ±1LSB
Max frequency for a correct
Update DAC_OUT change when
- - 1 MS/s CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ
rate(3) small variation in the input
code (from code i to i+1LSB)
Wakeup time from off state CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ
tWAKEUP(3) (Setting the ENx bit in the - 6.5 10 µs input code between lowest and
DAC Control register) highest possible ones.
Power supply rejection ratio
PSRR+ (1) (to VDDA) (static DC - –67 –40 dB No RLOAD, CLOAD = 50 pF
measurement
1. Guaranteed by design, not tested in production.
2. Quiescent mode refers to the state of the DAC a keeping steady value on the output, so no dynamic consumption is
involved.
3. Data based on characterization results, not tested in production.

Figure 34. 12-bit buffered /non-buffered DAC

Buffered/Non-buffered DAC

Buffer(1)
R LOAD
12-bit DACx_OUT
digital to
analog
converter

C LOAD

ai17157

1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the
DAC_CR register.

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Electrical characteristics STM32F302xx/STM32F303xx

6.3.20 Comparator characteristics

Table 71. Comparator characteristics

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

VDDA Analog supply voltage 2 - 3.6

Comparator input voltage
VIN 0 - VDDA V
range
VBG Scaler input voltage - 1.2 -
VSC Scaler offset voltage - ±5 ±10 mV
Scaler startup time from
tS_SC - - 0.1 ms
power down
Startup time to reach propagation delay
tSTART Comparator startup time - - 60 µs
specification
Ultra-low power mode - 2 4.5
Low power mode - 0.7 1.5 µs
Propagation delay for
200 mV step with 100 mV Medium power mode - 0.3 0.6
overdrive
VDDA ≥ 2.7 V - 50 100
High speed mode ns
VDDA < 2.7 V - 100 240
tD
Ultra-low power mode - 2 7
Low power mode - 0.7 2.1 µs
Propagation delay for full
range step with 100 mV Medium power mode - 0.3 1.2
overdrive
VDDA ≥ 2.7 V - 90 180
High speed mode ns
VDDA < 2.7 V - 110 300
Voffset Comparator offset error - ±4 ±10 mV
Offset error temperature µV/°
dVoffset/dT - 18 -
coefficient C
Ultra-low power mode - 1.2 1.5

COMP current Low power mode - 3 5

IDD(COMP) µA
consumption Medium power mode - 10 15
High speed mode - 75 100

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STM32F302xx/STM32F303xx Electrical characteristics

Table 71. Comparator characteristics (continued)

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

No hysteresis
- 0 -
(COMPxHYST[1:0]=00)
High speed mode 3 13
Low hysteresis
8
(COMPxHYST[1:0]=01) All other power 5 10
modes
Vhys Comparator hysteresis High speed mode 7 26 mV
Medium hysteresis
15
(COMPxHYST[1:0]=10) All other power 9 19
modes
High speed mode 18 49
High hysteresis
31
(COMPxHYST[1:0]=11) All other power 19 40
modes
1. Data based on characterization results, not tested in production.

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Electrical characteristics STM32F302xx/STM32F303xx

6.3.21 Operational amplifier characteristics

Table 72. Operational amplifier characteristics(1)

Symbol Parameter Condition Min Typ Max Unit

VDDA Analog supply voltage 2.4 - 3.6 V

CMIR Common mode input range 0 - VDDA V
25°C, No Load
- - 4
Maximum on output.
calibration range All
- - 6
voltage/Temp.
VIOFFSET Input offset voltage mV
25°C, No Load
- - 1.6
After offset on output.
calibration All
- - 3
voltage/Temp.
ΔVIOFFSET Input offset voltage drift - 5 - µV/°C
ILOAD Drive current - - 500 µA
No load,
IDDOPAMP Consumption - 690 1450 µA
quiescent mode
CMRR Common mode rejection ratio - 90 - dB
PSRR Power supply rejection ratio DC 73 117 - dB
GBW Bandwidth - 8.2 - MHz
SR Slew rate - 4.7 - V/µs
RLOAD Resistive load 4 - - kΩ
CLOAD Capacitive load - - 50 pF
Rload = min,
- - 100
Input at VDDA.
VOHSAT High saturation voltage
Rload = 20K,
- - 20
Input at VDDA.
mV
Rload = min,
- - 100
input at 0V
VOLSAT Low saturation voltage
Rload = 20K,
- - 20
input at 0V.
ϕm Phase margin - 62 - °
Offset trim time: during calibration,
tOFFTRIM minimum time needed between two - - 2 ms
steps to have 1 mV accuracy
CLOAD ≤ 50 pf,
RLOAD ≥ 4 kΩ,
tWAKEUP Wake up time from OFF state. - 2.8 5 µs
Follower
configuration

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STM32F302xx/STM32F303xx Electrical characteristics

Table 72. Operational amplifier characteristics(1)

Symbol Parameter Condition Min Typ Max Unit

- 2 -
- 4 -
PGA gain Non inverting gain value
- 8 -
- 16 -
Gain=2 - 5.4/5.4 -

R2/R1 internal resistance values in Gain=4 - 16.2/5.4 -

Rnetwork kΩ
PGA mode (2) Gain=8 - 37.8/5.4 -
Gain=16 - 40.5/2.7 -
PGA gain error PGA gain error -1% - 1%
Ibias OPAMP input bias current - - ±0.2(3) µA
1. Data guaranteed by design.
2. R2 is the internal resistance between OPAMP output and OPAMP inverting input.
R1 is the internal resistance between OPAMP inverting input and ground.
The PGA gain =1+R2/R1
3. Mostly TTa I/O leakage, when used in analog mode.

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Electrical characteristics STM32F302xx/STM32F303xx

6.3.22 Temperature sensor characteristics

Table 73. TS characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VSENSE linearity with temperature - ±1 ±2 °C

(1)
Avg_Slope Average slope 4.0 4.3 4.6 mV/°C
V25 Voltage at 25 °C 1.34 1.43 1.52 V
tSTART(1) Startup time 4 - 10 µs
ADC sampling time when reading the
TS_temp(1)(2) 2.2 - - µs
temperature
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.

Table 74. Temperature sensor calibration values

Calibration value name Description Memory address

TS ADC raw data acquired at

TS_CAL1 temperature of 30 °C, 0x1FFF F7B8 - 0x1FFF F7B9
VDDA= 3.3 V
TS ADC raw data acquired at
TS_CAL2 temperature of 110 °C 0x1FFF F7C2 - 0x1FFF F7C3
VDDA= 3.3 V

6.3.23 VBAT monitoring characteristics

Table 75. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 50 - KΩ

Q Ratio on VBAT measurement - 2 -
Er(1) Error on Q -1 - +1 %
ADC sampling time when reading the VBAT
TS_vbat(1)(2) 2.2 - - µs
1mV accuracy
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.

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STM32F302xx/STM32F303xx Package characteristics

7 Package characteristics

7.1 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

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Package characteristics STM32F302xx/STM32F303xx

Figure 35. LQFP100 – 14 x 14 mm, 100-pin low-profile quad flat package outline
3%!4).'
0,!.%
#

!
!

!

C
MM
'!5'%0,!.%
CCC #

!

+
$ ,
$ ,
$

 

 
B

%
%

 

0).  
)$%.4)&)#!4)/.
E
,?-%?6

1. Drawing is not to scale.

Table 76. LQPF100 – 14 x 14 mm, low-profile quad flat package mechanical data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max
A 1.60 0.063
A1 0.05 0.15 0.002 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
c 0.09 0.2 0.0035 0.0079
D 15.80 16.00 16.2 0.622 0.6299 0.6378
D1 13.80 14.00 14.2 0.5433 0.5512 0.5591
D3 12.00 0.4724
E 15.80 16.00 16.2 0.622 0.6299 0.6378

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STM32F302xx/STM32F303xx Package characteristics

Table 76. LQPF100 – 14 x 14 mm, low-profile quad flat package mechanical data (continued)
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max
E1 13.80 14.00 14.2 0.5433 0.5512 0.5591
E3 12.00 0.4724
e 0.50 0.0197
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 0.0394
K 0° 3.5° 7° 0° 3.5° 7°
ccc 0.08 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 36. Recommended footprint

75 51

76 50
0.5

0.3

16.7 14.3

100 26

1.2
1 25

12.3

16.7
ai14906b

1. Dimensions are in millimeters.

Doc ID 023353 Rev 5 121/133

Package characteristics STM32F302xx/STM32F303xx

Figure 37. LQFP64 – 10 x 10 mm, 64 pin low-profile quad flat package outline
3%!4).'
0,!.%
#

!
!

!

C
MM
'!5'%0,!.%
CCC #

!
+
$ ,
$ ,
$

 




%
%

%
 

0).  
)$%.4)&)#!4)/. E
7?-%?6

1. Drawing is not to scale.

Table 77. LQFP64 – 10 x 10 mm low-profile quad flat package mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A 1.60 0.0630
A1 0.05 0.15 0.0020 0.0059
A2 1.350 1.40 1.45 0.0531 0.0551 0.0571
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
c 0.09 0.20 0.0035 0.0079
D 11.80 12.00 12.20 0.4646 0.4724 0.4803
D1 9.80 10.00 10.20 0.3858 0.3937 0.4016
D3 7.50 0.2953

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STM32F302xx/STM32F303xx Package characteristics

Table 77. LQFP64 – 10 x 10 mm low-profile quad flat package mechanical data (continued)
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

E 11.80 12.00 12.20 0.4646 0.4724 0.4803

E1 9.80 10.00 10.20 0.3858 0.3937 0.4016
E3 7.50 0.2953
e 0.50 0.0197
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 0.0394
K 0° 3.5° 7° 0° 3.5° 7°
ccc 0.08 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 38. Recommended footprint

 


  

 


 


 




AIB

1. Dimensions are in millimeters.

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Package characteristics STM32F302xx/STM32F303xx

Figure 39. LQFP48 – 7 x 7 mm, 48-pin low-profile quad flat package outline

3%!4).'
0,!.%
#

!
!

!

C
MM
'!5'%0,!.%
CCC #

$ +

!
,
$ ,
$
 

 

%
%

%
 
0).
)$%.4)&)#!4)/.  

E
"?-%?6

1. Drawing is not to scale.

Table 78. LQFP48 – 7 x 7 mm, 48-pin low-profile quad flat package mechanical data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max
A 1.60 0.0630
A1 0.05 0.15 0.0020 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
c 0.09 0.20 0.0035 0.0079
D 8.80 9.00 9.20 0.3465 0.3543 0.3622
D1 6.80 7.00 7.20 0.2677 0.2756 0.2835
D3 5.50 0.2165
E 8.80 9.00 9.20 0.3465 0.3543 0.3622
E1 6.80 7.00 7.20 0.2677 0.2756 0.2835
E3 5.50 0.2165
e 0.50 0.0197

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STM32F302xx/STM32F303xx Package characteristics

Table 78. LQFP48 – 7 x 7 mm, 48-pin low-profile quad flat package mechanical data (continued)
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 0.0394
K 0° 3.5° 7° 0° 3.5° 7°
ccc 0.08 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 40. Recommended footprint





 
 



 



 
 







AID

1. Dimensions are in millimeters.

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Package characteristics STM32F302xx/STM32F303xx

7.2 Thermal characteristics

The maximum chip junction temperature (TJmax) must never exceed the values given in
Table 22: General operating conditions on page 58.
The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x ΘJA)
Where:
● TA max is the maximum ambient temperature in °C,
● ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
● PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
● PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = Σ (VOL × IOL) + Σ((VDD – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.

Table 79. Package thermal characteristics

Symbol Parameter Value Unit

Thermal resistance junction-ambient

45
LQFP64 - 10 × 10 mm / 0.5 mm pitch
Thermal resistance junction-ambient
ΘJA 55 °C/W
LQFP48 - 7 × 7 mm
Thermal resistance junction-ambient
41
LQFP100 - 14 × 14 mm / 0.5 mm pitch

7.2.1 Reference document

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org

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STM32F302xx/STM32F303xx Package characteristics

7.2.2 Selecting the product temperature range

When ordering the microcontroller, the temperature range is specified in the ordering
information scheme shown in Section 8: Part numbering.
Each temperature range suffix corresponds to a specific guaranteed ambient temperature at
maximum dissipation and, to a specific maximum junction temperature.
As applications do not commonly use the STM32F30xB/C at maximum dissipation, it is
useful to calculate the exact power consumption and junction temperature to determine
which temperature range will be best suited to the application.
The following examples show how to calculate the temperature range needed for a given
application.

Example 1: High-performance application

Assuming the following application conditions:
Maximum ambient temperature TAmax = 82 °C (measured according to JESD51-2),
IDDmax = 50 mA, VDD = 3.5 V, maximum 3 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V and maximum 2 I/Os used at the same time in output
at low level with IOL = 20 mA, VOL= 1.3 V
PINTmax = 50 mA × 3.5 V= 175 mW
PIOmax = 3 × 8 mA × 0.4 V + 2 × 20 mA × 1.3 V = 61.6 mW
This gives: PINTmax = 175 mW and PIOmax = 61.6 mW:
PDmax = 175 + 61.6 = 236.6 mW
Thus: PDmax = 236.6 mW
Using the values obtained in Table 79 TJmax is calculated as follows:
– For LQFP64, 45°C/W
TJmax = 82 °C + (45°C/W × 236.6 mW) = 82 °C + 10.65 °C = 92.65 °C
This is within the range of the suffix 6 version parts (–40 < TJ < 105 °C).
In this case, parts must be ordered at least with the temperature range suffix 6 (see
Section 8: Part numbering).

Example 2: High-temperature application

Using the same rules, it is possible to address applications that run at high ambient
temperatures with a low dissipation, as long as junction temperature TJ remains within the
specified range.
Assuming the following application conditions:
Maximum ambient temperature TAmax = 115 °C (measured according to JESD51-2),
IDDmax = 20 mA, VDD = 3.5 V, maximum 9 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V
PINTmax = 20 mA × 3.5 V= 70 mW
PIOmax = 9 × 8 mA × 0.4 V = 28.8 mW
This gives: PINTmax = 70 mW and PIOmax = 28.8 mW:
PDmax = 70 + 28.8 = 98.8 mW
Thus: PDmax = 98.8 mW

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Package characteristics STM32F302xx/STM32F303xx

Using the values obtained in Table 79 TJmax is calculated as follows:

– For LQFP100, 41°C/W
TJmax = 115 °C + (41°C/W × 98.8 mW) = 115 °C + 4.05 °C = 119.05 °C
This is within the range of the suffix 7 version parts (–40 < TJ < 125 °C).
In this case, parts must be ordered at least with the temperature range suffix 7 (see
Section 8: Part numbering).

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STM32F302xx/STM32F303xx Part numbering

8 Part numbering

Table 80. Ordering information scheme

Example: STM32 F 303 R B T 6 xxx

Device family
STM32 = ARM-based 32-bit microcontroller

Product type
F = general-purpose

Device subfamily
302 = STM32F302xx
303 = STM32F303xx

Pin count
C = 48 pins
R = 64 pins
V = 100 pins

Flash memory size

B = 128 Kbytes of Flash memory (medium density)
C = 256 Kbytes of Flash memory (high density)

Package
T = LQFP

Temperature range
6 = Industrial temperature range, –40 to 85 °C
7 = Industrial temperature range, –40 to 105 °C

Options
xxx = programmed parts
TR = tape and reel

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Revision history STM32F302xx/STM32F303xx

9 Revision history

Table 81. Document revision history

Date Revision Changes

22-Jun-2012 1 Initial release

Modified Features on cover page.
Modified Table 2: STM32F301xx family device features and peripheral
counts
Added clock tree to Section 3.8: Clocks and startup
Added Table 5: STM32F30xB/C I2C implementation
Added Table 6: USART features
Added Table 7: STM32F30xB/C SPI/I2S implementation
Modified Table 8: Capacitive sensing GPIOs available on
STM32F302xx/STM32F303xx devices
Modified Figure 5, Figure 6 and Figure 7:
STM32F302xx/STM32F303xx LQFP100 pinout
Modified Table 11: STM32F302xx/STM32F303xx pin definitions
Modified Figure 11: Power supply scheme
Modified Table 19: Voltage characteristics
Modified Table 20: Current characteristics
Modified Table 23: Operating conditions at power-up / power-down
Added footnote to Table 29: Typical and maximum current consumption
from the VDDA supply
07-Sep-2012 2 Added footnote to Table 33 and Table 34: Typical current consumption
in Sleep mode, code running from Flash or RAM
Removed table “Switching output I/O current consumption” and table
“Peripheral current consumption”
Added note under Figure 17: Typical application with a 32.768 kHz
crystal
Updated Table 42: HSI oscillator characteristics
Updated Wakeup time from low-power mode and Table 37: Low-power
mode wakeup timings
Updated Table 45: Flash memory characteristics
Updated Table 50: Electrical sensitivities
Updated Table 51: I/O current injection susceptibility
Updated Table 52: I/O static characteristics
Updated Table 53: Output voltage characteristics
Updated Table 55: NRST pin characteristics
Updated Table 61: SPI characteristics
Updated Table 62: I2S characteristics
Corrected LQFP100 in Section 7.2.3: Selecting the product
temperature range
21-Sep-2012 3 Updated Table 61: SPI characteristics

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STM32F302xx/STM32F303xx Revision history

Table 81. Document revision history

Date Revision Changes

Updated first page

Removed references to VDDSDx and VSSSD
Added reference to PM0214 in Section 1
Moved Temp. sensor calibartion values toTable 74 and VREF
calibration values to Table 27
Updated Table 2: STM32F30xB/C family device features and
peripheral counts on page 10
UpdatedSection 3.4: Embedded SRAM on page 14
Updated Section 3.2: Memory protection unit (MPU) on page 13
Updated Section 3.23: Universal serial bus (USB) on page 28
Modified Section 3.25: Touch sensing controller (TSC) on page 29
Updated heading of Table 6: USART features on page 27
Updated Table 11: STM32F302xx/STM32F303xx pin definitions on
page 36
Added notes to PC13, PC14 and PC15 in Table 11:
STM32F302xx/STM32F303xx pin definitions on page 36
Updated Figure 11: Power supply scheme on page 54
Modified Table 19: Voltage characteristics on page 56
Modified Table 20: Current characteristics on page 57
Modified Table 22: General operating conditions on page 58
Modified Figure 13: Typical VBAT current consumption (LSE and RTC
ON/LSEDRV[1:0] = ’00’) on page 66
Updated Section 6.3.14: I/O port characteristics on page 87
Updated Table 28: Typical and maximum current consumption from
VDD supply at VDD = 3.6V on page 62 and Table 29: Typical and
maximum current consumption from the VDDA supply on page 63
05-Dec-2012 4 Updated Table 30: Typical and maximum VDD consumption in Stop
and Standby modes on page 65 and Table 31: Typical and maximum
VDDA consumption in Stop and Standby modes on page 65
Updated Table 32: Typical and maximum current consumption from
VBAT supply on page 66
Added Figure 13: Typical VBAT current consumption (LSE and RTC
ON/LSEDRV[1:0] = ’00’)
Updated Table 33: Typical current consumption in Run mode, code
with data processing running from Flash on page 67 and Table 34:
Typical current consumption in Sleep mode, code running from Flash
or RAM on page 68
Added Table 36: Peripheral current consumption on page 71
Added Table 35: Switching output I/O current consumption on page 70
Updated Section 6.3.6: Wakeup time from low-power mode on page 73
Modified ESD absolute maximum ratings on page 84
Modified Table 53: Output voltage characteristics on page 90
Updated EMI characteristics on page 84
Updated Table 54: I/O AC characteristics on page 91
Updated Table 51: I/O current injection susceptibility on page 86
Updated Table 56: TIMx characteristics on page 93
Updated Section 7.2: Thermal characteristics on page 126
Added Table 67: Maximum ADC RAIN on page 106
Added Table 68: ADC accuracy - limited test conditions on page 107
Updated Table 69: ADC accuracy on page 109
Updated Table 70: DAC characteristics on page 112
Updated Table 72: Operational amplifier characteristics on page 116
Updated figures and tables in Section 7: Package characteristics

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Revision history STM32F302xx/STM32F303xx

Table 81. Document revision history

Date Revision Changes

Updated Vhys and Ilkg in Table 52: I/O static characteristics.

Updated VIL(NRST), VIH(NRST), and VNF(NRST) in Table 55: NRST pin
08-Jan-2013 5 characteristics.
Updated Table 68: ADC accuracy - limited test conditions and Table 69:
ADC accuracy.

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STM32F302xx/STM32F303xx

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