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SOT-23 Plastic-Encapsulate MOSFETS: Jiangsu Changjiang Electronics Technology Co., LTD

This document provides information on the CJ2302 N-Channel 20-V MOSFET from Jiangsu Changjiang Electronics Technology Co. It is a plastic-encapsulated MOSFET suitable for use in load switches for portable devices and DC/DC converters. The document lists key electrical characteristics and ratings of the MOSFET such as a drain-source breakdown voltage of 20V, continuous drain current of 2.1A, and on-resistance as low as 0.045 ohms. Typical output, transfer, and on-resistance characteristics are also shown in graphs.

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140 views3 pages

SOT-23 Plastic-Encapsulate MOSFETS: Jiangsu Changjiang Electronics Technology Co., LTD

This document provides information on the CJ2302 N-Channel 20-V MOSFET from Jiangsu Changjiang Electronics Technology Co. It is a plastic-encapsulated MOSFET suitable for use in load switches for portable devices and DC/DC converters. The document lists key electrical characteristics and ratings of the MOSFET such as a drain-source breakdown voltage of 20V, continuous drain current of 2.1A, and on-resistance as low as 0.045 ohms. Typical output, transfer, and on-resistance characteristics are also shown in graphs.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

SOT-23 Plastic-Encapsulate MOSFETS

CJ2302 N-Channel 20-V(D-S) MOSFET SOT-23

FEATURE
1. GATE
TrenchFET Power MOSFET
2. SOURCE
3. DRAIN

APPLICATIONS
z Load Switch for Portable Devices
z DC/DC Converter

MARKING: S2

Maximum ratings (Ta=25℃ unless otherwise noted)

Parameter Symbol Value Unit


Drain-Source Voltage VDS 20
V
Gate-Source Voltage VGS ±8
Continuous Drain Current ID 2.1
A
Continuous Source-Drain Current(Diode Conduction) IS 0.6
Power Dissipation PD 0.35 W
Thermal Resistance from Junction to Ambient (t≤5s) RθJA 357 ℃/W
Operating Junction TJ 150
℃
Storage Temperature TSTG -55 ~+150

A,Dec,2010
Electrical characteristics (Ta=25℃ unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Units


Static
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10µA 20
V
Gate-threshold voltage VGS(th) VDS =VGS, ID =50µA 0.65 0.95 1.2
Gate-body leakage IGSS VDS =0V, VGS =±8V ±100 nA
Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1 µA
VGS =4.5V, ID =3.6A 0.045 0.060
Drain-source on-resistancea rDS(on) Ω
VGS =2.5V, ID =3.1A 0.070 0.115
Forward transconductancea gfs VDS =5V, ID =3.6A 8 S
Diode forward voltage VSD IS=0.94A,VGS=0V 0.76 1.2 V
Dynamic
Total gate charge Qg 4.0 10
Gate-source charge Qgs VDS =10V,VGS =4.5V,ID =3.6A 0.65 nC
Gate-drain charge Qgd 1.5
b
Input capacitance Ciss 300
Output capacitance b Coss VDS =10V,VGS =0V,f=1MHz 120 pF
b
Reverse transfer capacitance Crss 80
b
Switching
Turn-on delay time td(on) 7 15
VDD=10V,
Rise time tr 55 80
RL=5.5Ω, ID ≈3.6A, ns
Turn-off delay time td(off) 16 60
VGEN=4.5V,Rg=6Ω
Fall time tf 10 25
Notes :
a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
b. These parameters have no way to verify.

A,Dec,2010
Typical Characteristics CJ2302
Output Characteristics Transfer Characteristics
15 10
VGS=3.5V,3.0V,2.5V Ta=25℃ Ta=25℃
Pulsed Pulsed
VGS=2.0V
12 8

(A)
(A)

ID
6
ID

DRAIN CURRENT
DRAIN CURRENT

6 4

VGS=1.5V

3 2

0 0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5

DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)

RDS(ON) —— ID RDS(ON) —— VGS


100 0.20
Ta=25℃ Ta=25℃
Pulsed Pulsed

80 0.16
( Ω)
(mΩ)

RDS(ON)
RDS(ON)

60 0.12
ON-RESISTANCE

VGS=2.5V
ON-RESISTANCE

40 0.08
VGS=4.5V

ID=4.5A
20 0.04

0 0.00
0 5 10 15 20 25 30 0 2 4 6 8 10

DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V)

A,Dec,2010

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