SEMICONDUCTOR 2SB649AM Series RoHS

RoHS
Nell High Power Products

Bipolar General Purpose PNP Power Transistor

-1.5A / -120V, -160V / 20W

8.0±0.5 +0.15 2.7± 0.4

Ø3.1 - 0.1

0º

12
12

0
º

11.0±0.5
3.7±0.7
2.3±0.3
º
0
12

1.1

3 (B)
2 (C)
1(E)

15.6±0.5
TO-126 0.8

2.29±0.5 2.29±0.5 0.55 1.2

APPLICATIONS C

Low frequency power amplifier complementary

E C B B
pair with 2SD669AM/2SD669AM-A
E PNP
All dimensions in millimeters

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

VALUE
SYMBOL PARAMETER UNIT
2SB649AM 2SB649AM-A

VCBO Collector to base voltage -180 -180

V CEO Collector to emitter voltage -120 -160 V

V EBO Emitter to base voltage -5

I C(peak) Peak collector current -3

A
IC Collector current -1.5

T C = 25°C 20
PC Collector power dissipation W
T A = 25°C 1

Tj Junction temperature 150

ºC
T stg Storage temperature -55 to 150

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 SEMICONDUCTOR 2SB649AM Series RoHS
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)

SYMBOL PARAMETER CONDITIONS min typ max UNIT

V (BR)CBO Collector to base breakdown voltage I C = -1mA, l E = 0 -180

2SB649AM -120
V (BR)CEO Collector to emitter breakdown voltage I C = -10mA, R BE = ∞ V
2SB649AM-A -160

V (BR)EBO Emitter to base breakdown voltage I E = -1mA, I C = 0 -5

I CBO Collector cutoff current V CB = -160V, I E = 0 -10 µA

2SB649AM 60 320
h FE1 V CE = -5V, l C = -150 mA
DC current transfer ratio (Note1) 2SB649AM-A 60 200

h FE2 V CE = -5V, l C = -500 mA 30

V CE(sat) Collector to emitter saturation voltage l C = -0.5A, l B = -50mA -1.0

V
V BE Base to emitter voltage V CE = -5V, l C = -150mA -1.5

Transition frequency
fT V CE = -5V, l C = -150 mA 140 MHz
( gain bandwidth product)

C ob Collector output capacitance V CB = -10V, l E = 0, f test =1MHz 27 pF

Note: 1. Pulse test.

CLASSIFICATION OF hFE1
RANK B C D

2SD669AM 60 to 120 100 to 200 160 to 320

2SD669AM-A 60 to 120 100 to 200

Fig.1 Maximum collector dissipation curve Fig.2 Area of safe operation

30
Collector power dissipation, P C (W)

-3
(-13.3V, -1.5A)
Collector current, l C (A)

-1.0
20 (-40V, -0.5A)

-0.3

DC Operation (T C = 25°C)
-0.1
10

(-120V, -0.04A)
-0.03
(-160V, -0.02A)
2SB649AM 2SB649AM-A
0 -0.01
0 50 100 150 -1 -3 -10 -30 -100 -300

Case temperature, T C (°C) Collector to emitter voltage, V CE (V)

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 SEMICONDUCTOR 2SB649AM Series RoHS
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Fig.3 Typical output characteristecs Fig.4 Typical transfer characteristics

-1.0 -500
-5.5 T C = 25°C
-5.0 V CE = - 5V
0
-4.5 -4.
Collector current, l C (A)

-0.8 .5

Collector current, l C (A)

-3
0 -100
-3. T a = 75°C

PC
-2.5

=
T a = 25°C

20
-0.6
W
T a = -25°C
-2 .0

-1.5
-0.4
-10
-1.0

-0.2 -0.5mA

l B =0
0 -1
0 -10 -20 -30 -40 -50 0 -0.2 -0.4 -0.6 -0.8 -1.0

Collector to emitter voltage, V CE (V) Base to emitter voltage, V BE (V)

Fig.5 DC current transfer ratio vs. Fig.6 Collector to emitter saturation voltage
collector current vs. collector current
Collector to emitter saturation voltage,

350 -1.2
V CE = -5V l C = 10 l B
DC current transfer ratio, h FE

300 T a = 75°C -1.0

250
-0.8
T a = 25 °C
V CE(sat) (V)

200
-0.6
150 T a = -2 5° C
T a = 75°C
-0.4 T a = 25°C
100
T a = -25°C

50 -0.2

0 -0
-1 -10 -100 -1000 -1 -10 -100 -1000

Collector current, I C (mA) Collector current, I C (mA)

Fig.7 Base to emitter saturation voltage vs. Fig.8 Gain bandwidth product vs.
collector current collector current

-1.2 240
V CE = -5 V
Base to emitter saturation voltage,

l C = 10 l B
Gain bandwidth product, f T (MHz)

-1.0 200

25°C
Ta = - 160
-0.8
5°C
T a= 2
V BE(sat) (V)

5 °C
-0.6 T a= 7 120

-0.4 80

-0.2 40

-0 0
-1 -10 -100 -1000 -10 -30 -100 -300 -1000

Collector current, I C (mA) Collector current, I C (mA)

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 SEMICONDUCTOR 2SB649AM Series RoHS
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Fig.9 Collector output capacitance vs.

collector to base voltage
Collector output capacitance, C ob (pF)
200
f = 1 MHZ
lE = 0
100

50

20

10

2
-1 -3 -10 -30 -100

Collector to base voltage, V CB (V)

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