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Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SB512 silicon PNP power transistor. The transistor has a TO-220 package and is intended for low frequency power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -60V, collector current of -3A, and collector power dissipation of 25W at a case temperature of 25°C. Electrical characteristics are also listed such as a typical DC current gain of 60-320 and transition frequency of 3MHz.

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93 views3 pages

Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SB512 silicon PNP power transistor. The transistor has a TO-220 package and is intended for low frequency power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -60V, collector current of -3A, and collector power dissipation of 25W at a case temperature of 25°C. Electrical characteristics are also listed such as a typical DC current gain of 60-320 and transition frequency of 3MHz.

Uploaded by

jose antonio iglesias infantes
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB512

DESCRIPTION
·With TO-220 package
·Low collector saturation voltage

APPLICATIONS
·For low frequency power amplifier
applications

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base

3 Base Fig.1 simplified outline (TO-220) and symbol

Absolute maximum ratings(Ta=25 )

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -60 V

VCEO Collector-emitter voltage Open base -60 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -3 A

PC Collector power dissipation TC=25 25 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB512

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 -60 V

V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -60 V

V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -6 V

VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V

VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V

ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 µA

IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 µA

hFE DC current gain IC=-0.5A ; VCE=-5V 60 320

fT Transition frequency IC=-0.5A ; VCE=-10V 3 MHz

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB512

PACKAGE OUTLINE

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

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