ELE 226.
2 Electrical Engineering Materials (2-2-0)
Evaluation:
Theory Practical Total
Sessional 50 - 50
Final 50 - 50
Total 100 - 100
Course Objectives:
To provide a basic understanding of the electric and magnetic properties of materials
used in electrical and electronics engineering.
Course Contents:
1. Theory of Metals (3 hrs)
Elementary quantum mechanical ideas, Free electron theory, Energy well
model of a metal, Density of states function, The Fermi-Dirac distribution
functions, Thermionic emission, Work function, The Fermi level at
equilibrium, contact potential.
2. Free Electron Theory of Conduction in Metals (4 hrs)
Thermal velocity of electrons at equilibrium, Lattice scattering, Mean free
time between collisions, Drift velocity of electrons in an electric field,
Diffusion of electrons, Diffusion coefficient, Einstiein's relationship between
mobility and diffusion coefficients, chemical and physical properties of
common conduction, materials such as As, Au, Cu, Al, Mn, N, etc.
3. Conduction in Liquid and Gases (2 hrs)
Ionic conduction in electrolytes, electrical conduction in gases, are
discharges, electric breakdown.
4. Dielectric Materials (4 hrs)
Macroscopic effects, Polarization, Dielectric constant, Dielectric losses,
Frequency and temperature effects, Dielectric losses, Frequency and
temperature effects, Dielectric breakdown, Ferroelectricity and
piezoelectricity, properties of common dielectrics such as glass, Porcelain,
Polyethylene, PVC, Nylon, bakelite, rubber, mica, transformer oil, etc.
5. Magnetic Materials (5 hrs)
Ferromagnetism, ferromagnetism, para magnetism, domain structure,
hysteresis loop, eddy current losses, soft magnetic materials, Fe-Si alloys, Ni-
Fe alloys, ferrites for high frequency transformers, square loop materials for
magnetic memory, relaxation oscillators, hared magnetic materials such as
carbon steels, alnico alloys and barium farrites.
6. Semiconducting Materials (8 hrs)
Band structure of group iv materials, Energy gap, density of states function,
Femi-Dirac distribution function, hole and electron densities in an intrinsic
crystal, effective densities of states, intrinsic concentration, Femi level of
energy at equilibrium, group iii and group iv impurities, acceptors and donors,
p-and n-type materials, energy band diagrams for uniformly-doped and graded
p-and n-type materials, generation PN, recombination of electrons and holes,
concepts of lifetime, mobility and diffusion coefficients for electrons and
holes in semiconductors, transport and continuity equations for electrons and
holes, concepts of diffusion length, energy band diagram for a p-n junction,
contact potentials, metal-semiconductor contacts.
7. Semiconductor Materials Procession (4 hrs)
Crystal growing, doping by solid state diffusion, ion implantation, oxidation
Photolithography, the planar process, metallization, contacts.
Reference Books:
1. R.A. Colcaseer Ands. Diehi-Nagle, Materials and Devices for Electrical
Engineers and Physicists, McGraw-Hill, New York, 1985.
2. R.C. Jaeger, Introduction to Microelectronic Fabrication-Volume IV,
Addison-Wesley Publishing Company Inc., 1988.