University of Baghdad

College of Engineering

Department of Electrical Engineering

"Power Electronics and Special Machine "

Characteristics of IGBT transistors and its applications .Take into "
,Account input, output impedances and characteristics, curves, current
".Voltage, frequency, and switching properties ,
Name: Zahraa Ali Doech
Fourth stage
2019/2020
13/7/2020
 Content
Abstract………………………………………………………………………………………..1
What is Insulated Gate Bipolar Transistor (IGBT)? ………………………………………….2
IGBT Characteristics………………………………………………………………………….2
Applications of IGBT…..……………………………………………………………….…….3
Static I-V Characteristics of IGBT………………………………………………....................5
Transfer Characteristics of IGBT……………………………………………………………..5
Switching Characteristics of IGBT……………………………………………………...6
Advantages and Disadvantages of IGBT……………………………………………………..7
References …………………………………………………………………………………....8
 Abstract
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor
device primarily used as an electronic switch which, as it was developed, came to combine high
efficiency and fast switching. It consists of four alternating layers (P-N-P-N) that are controlled
by a metal–oxide–semiconductor (MOS) gate structure without regenerative action. Although
the structure of the IGBT is topologically the same as a thyristor with a 'MOS' gate (MOS gate
thyristor), the thyristor action is completely suppressed and only the transistor action is
permitted in the entire device operation range. It is used in switching power supplies in high-
power applications: variable-frequency drives (VFDs), electric cars, trains, variable speed
refrigerators, lamp ballasts, arc-welding machines, and air conditioners.

Since it is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms
with pulse-width modulation and low-pass filters, so it is also used in switching amplifiers in
sound systems and industrial control systems. In switching applications modern devices
feature pulse repetition rates well into the ultrasonic range—frequencies which are at least ten
times the highest audio frequency handled by the device when used as an analog audio amplifier.
As of 2010, the IGBT is the second most widely used power transistor, after the power
MOSFET. [4]

1
?What is Insulated Gate Bipolar Transistor (IGBT)
IGBT is a short form of Insulated Gate Bipolar Transistor, combination of Bipolar Junction
Transistor (BJT) and Metal oxide Field effect transistor (MOS-FET). It’s is a semiconductor
device used for switching related applications.

As IGBT is a combination of MOSFET and Transistor, it has advantages of the both transistors

and MOSFET. MOSFET has advantages of high switching speed with high impedance and on
the other side BJT has advantage of high gain and low saturation voltage, both are present in
IGBT transistor. IGBT is a voltage controlled semiconductor which enables large collector
emitter currents with almost zero gate current drive.

As discussed, IGBT has the advantages of both MOSFET and BJTs, IGBT has insulated gate
same as like typical MOSFETs and same output transfer characteristics. Although, BJT is
current controlled device but for the IGBT, the control depends on the MOSFET, thus it is
voltage controlled device, equivalent to the standard MOSFETs. [1]

IGBT Characteristics
Because the IGBT is a voltage-controlled device, it only requires a small voltage on the Gate to
maintain conduction through the device unlike BJT’s which require that the Base current is
continuously supplied in a sufficient enough quantity to maintain saturation.

Also the IGBT is a unidirectional device, meaning it can only switch current in the “forward

2
direction”, that is from Collector to Emitter unlike MOSFET’s which have bi-directional current
switching capabilities (controlled in the forward direction and uncontrolled in the reverse
direction).

The principal of operation and Gate drive circuits for the insulated gate bipolar transistor are
very similar to that of the N-channel power MOSFET. The basic difference is that the resistance
offered by the main conducting channel when current flows through the device in its “ON” state
is very much smaller in the IGBT. Because of this, the current ratings are much higher when
compared with an equivalent power MOSFET.

The main advantages of using the Insulated Gate Bipolar Transistor over other types of transistor
devices are its high voltage capability, low ON-resistance, ease of drive, relatively fast switching
speeds and combined with zero gate drive current makes it a good choice for moderate speed,
high voltage applications such as in pulse-width modulated (PWM), variable speed control,
switch-mode power supplies or solar powered DC-AC inverter and frequency converter
applications operating in the hundreds of kilohertz range. [2]

Applications of IGBT:

IGBT is mainly used in Power related applications. Standard power BJT’s have very slow
response properties whereas MOSFET is suitable for fast switching application, but MOSFET is
a costly choice where higher current rating is required. IGBT is suitable for replacing power
BJTs and Power MOSFETs.

Also, IGBT offers lower ‘ON’ resistance compared with BJTs and due to this property the IGBT
is thermal efficient in high power related application.
IGBT

applications are vast in electronics field. Due to low on resistance, Very high current rating, high
switching speed, zero gate drive, IGBTs are used in High power motor control, Inverters,
switched mode power supply with high frequency converting areas.

In the above image, basic switching application is shown using IGBT. The RL, is a resistive load
connected across IGBT’s emitter to ground. The voltage difference across the load is denoted
as VRL. The load can be inductive also. And on the right side a different circuit is shown.  The
load is connected across collector where as a current protection Resistor is connected across the
emitter. The current will flow from collector to emitter in both cases.
In case of BJT’s we need to supply constant current across the base of the BJT. But in case of
the IGBT, same as like MOSFET we need to provide constant voltage across the gate and the
saturation is maintained in constant state.

On the left case, the voltage difference, VIN which is the potential difference of the Input (gate)
with the Ground / VSS, controls the output current flowing from the collector to emitter. The
voltage difference between VCC and GND is almost same across the load.

On the right side circuit, the current flowing through the load is depends on the voltage divided
by the RS value.

IRL2 = VIN / RS

The Insulated Gate Bipolar Transistor (IGBT) can be switched ‘ON’ and ‘OFF’ by activating the
gate. If we make the gate more positive by applying voltage across the gate, the IGBT’s emitter
keeps the IGBT in its “ON“ state and if we make the gate negative or zero push the IGBT will
remain in “OFF” state. It is same as like BJT and MOSFET switching. [1]

Static I-V Characteristics of IGBT

The figure below shows static i-v characteristics of an n-channel IGBT along with a circuit
.diagram with the parameters marked
The graph is similar to that of a BJT except that the parameter which is kept constant for a plot is
VGE because IGBT is a voltage controlled device unlike BJT which is a current controlled
device. When the device is in OFF mode (VCE is positive and VGE < VGET) the reverse voltage is
by J2 and blocked
is when it
biased, reverse
is i.e. VCE
, J1 negative
the blocks
[3] voltage.

Transfer Characteristics of IGBT

Figure below shows the transfer characteristic of IGBT, which is exactly same as PMOSFET.
The IGBT is in ON-state only after VGE is greater than a threshold value VGET.[3]

Switching Characteristics of IGBT

.The figure below shows the typical switching characteristic of IGBT
Turn on time ton is composed of two components as usual, delay time (tdn) and rise time (tr).
Delay time is defined as the time in which collector current rises from leakage current ICE to 0.1
IC (final collector current) and collector emitter voltage falls from VCE to 0.9VCE. Rise time is
defined as the time in which collector current rises from 0.1 IC to IC and collector emitter voltage
.falls from 0.9VCE to 0.1 VCE
The turn off time toff consists of three components, delay time (tdf), initial fall time (tf1) and final
fall time (tf2). Delay time is defined as time when collector current falls from IC to 0.9 IC and VCE
begins to rise. Initial fall time is the time during which collector current falls from 0.9 IC to 0.2 IC
and collector emitter voltage rises to 0.1 VCE. The final fall time is defined as time during which
collector current falls from 0.2 IC to 0.1 IC and 0.1VCE rises to final value VCE.[3]

Advantages and Disadvantages of IGBT

-:Advantages

 Lower gate drive requirements

 Low switching losses
  Small snubber circuitry requirements
 High input impedance
 Voltage controlled device
 Temperature coefficient of ON state resistance is positive and less than PMOSFET, hence
less On-state voltage drop and power loss.
 Enhanced conduction due to bipolar nature
 Better Safe Operating Area

-:Disadvantages

 Cost
 Latching-up problem
 High turn off time compared to PMOSFET [3].

:References
https://circuitdigest.com/tutorial/igbt-transistor ]1[

https://www.electronics-tutorials.ws/power/insulated-gate-bipolar-transistor.html ]2[
https://www.electrical4u.com/insulated-gate-bipolar-transistor-igbt ]3[

https://en.wikipedia.org/wiki/Insulated-gate_bipolar_transistor ]4[