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Power Transistor Specs for Engineers

This document provides product specifications for SavantIC Semiconductor's BD250/A/B/C silicon PNP power transistors. The transistors come in a TO-3PN package and can handle up to 125W of continuous power dissipation at 25°C case temperature with a maximum collector current of 25A. Key electrical characteristics include collector-emitter breakdown voltages ranging from -45V to -115V, saturation voltages below 4V, DC current gains from 5 to 25, and switching times below 0.4μs. The document provides detailed ratings, characteristics, and package outline dimensions.

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Diego Oliveira
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30 views3 pages

Power Transistor Specs for Engineers

This document provides product specifications for SavantIC Semiconductor's BD250/A/B/C silicon PNP power transistors. The transistors come in a TO-3PN package and can handle up to 125W of continuous power dissipation at 25°C case temperature with a maximum collector current of 25A. Key electrical characteristics include collector-emitter breakdown voltages ranging from -45V to -115V, saturation voltages below 4V, DC current gains from 5 to 25, and switching times below 0.4μs. The document provides detailed ratings, characteristics, and package outline dimensions.

Uploaded by

Diego Oliveira
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors BD250/A/B/C

DESCRIPTION
www.datasheet4u.com
·With TO-3PN package
·Complement to type BD249/A/B/C
·125 W at 25°C case temperature
·25 A continuous collector current

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

BD246 -55

BD246A -70
VCBO Collector-base voltage Collector emitter V
BD246B -90

BD246C -115

BD246 -45

BD246A -60
VCEO Collector-emitter voltage Open base V
BD246B -80

BD246C -100

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -25 A

ICM Collector current-peak -40 A

IB Base current -5 A

PC Collector power dissipation TC=25 125 W

Tj Junction temperature -65~150

Tstg Storage temperature -65~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT

Rth j-c Thermal resistance junction to case 1 /W


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors BD250/A/B/C

CHARACTERISTICS
www.datasheet4u.com
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

BD250 -45

BD250A -60
Collector-emitter
V(BR)CEO IC=-30mA ;IB=0 V
breakdown voltage
BD250B -80

BD250C -100

VCEsat-1 Collector-emitter saturation voltage IC=-15A ;IB=-1.5A -1.8 V

VCEsat-2 Collector-emitter saturation voltage IC=-25A ;IB=-5A -4.0 V

VBE-1 Base-emitter on voltage IC=-15A ; VCE=-4V -1.6 V

VBE-2 Base-emitter on voltage IC=-25A ; VCE=-4V -3.0 V

BD250/250A VCE=-30V IB=0


Collector
ICEO -1.0 mA
cut-off current
BD250B/250C VCE=-60V IB=0

IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA

hFE-1 DC current gain IC=-1.5A ; VCE=-4V 25

hFE-2 DC current gain IC=-15A ; VCE=-4V 10

hFE-3 DC current gain IC=-25A ; VCE=-4V 5

Switching times

ton Turn-on time IC=-5A; 0.2 µs


IB1=-IB2=-0.5A
toff Turn-off time RL=5A 0.4 µs

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors BD250/A/B/C

PACKAGE OUTLINE

www.datasheet4u.com

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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