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Isc N-Channel MOSFET Transistor 2SK1011: INCHANGE Semiconductor Product Specification

The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1011. Key specifications include a drain current of 10A at 25°C, a drain-source voltage of 450V minimum, and applications for high voltage, high speed power switching. Absolute maximum ratings include a drain-source voltage of 450V, gate-source voltage of ±30V, and maximum junction temperature of 150°C.

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324 views2 pages

Isc N-Channel MOSFET Transistor 2SK1011: INCHANGE Semiconductor Product Specification

The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1011. Key specifications include a drain current of 10A at 25°C, a drain-source voltage of 450V minimum, and applications for high voltage, high speed power switching. Absolute maximum ratings include a drain-source voltage of 450V, gate-source voltage of ±30V, and maximum junction temperature of 150°C.

Uploaded by

Elec Thaihoa
Copyright
© © All Rights Reserved
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INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 2SK1011

DESCRIPTION
·Drain Current –ID=10A@ TC=25℃
·Drain Source Voltage-
: VDSS= 450V(Min)

APPLICATIONS
·high voltage, high speed power switching

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL ARAMETER VALUE UNIT

VDSS Drain-Source Voltage (VGS=0) 450 V

VGS Gate-Source Voltage ±30 V

ID Drain Current-continuous@ TC=25℃ 10 A

Ptot Total Dissipation@TC=25℃ 100 W

Tj Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark

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INCHANGE Semiconductor isc Product Specification

isc N-Channel Mosfet Transistor 2SK1011

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 450 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 5.0 V

RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A 0.5 0.65 Ω

IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 ±100 nA

IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 500 uA

VSD Forward On-Voltage IS=10A; VGS=0 1.1 1.5 V

tr Rise time 80 120 ns

ton Turn-on time 110 165 ns


VGS=10V;ID=10A;
RL=25Ω
tf Fall time 80 120 ns

toff Turn-off time 240 360 ns

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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