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C4159 - Transistor Sin Damper

This document provides specifications for the 2SA1606/2SC4159 PNP/NPN epitaxial planar silicon transistors, which are high-voltage switching transistors intended for applications such as 100W audio power amplifiers. The document lists maximum ratings, electrical characteristics, and switching time test circuits for the transistors. It also contains legal disclaimers regarding applications involving safety and export controls.
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0% found this document useful (0 votes)
374 views4 pages

C4159 - Transistor Sin Damper

This document provides specifications for the 2SA1606/2SC4159 PNP/NPN epitaxial planar silicon transistors, which are high-voltage switching transistors intended for applications such as 100W audio power amplifiers. The document lists maximum ratings, electrical characteristics, and switching time test circuits for the transistors. It also contains legal disclaimers regarding applications involving safety and export controls.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

Ordering number:EN2535

www.DataSheet4U.com
PNP/NPN Epitaxial Planar Silicon Transistors

2SA1606/2SC4159
High-Voltage Switching, AF 100W
Driver Applications

Applications Package Dimensions


· High-voltage switching, AF power amplifier, 100W unit:mm
output predrivers. 2041
[2SA1606/2SC4159]
Features
· Micaless package facilitating mounting.

E : Emitter
C : Collector
B : Base
( ) : 2SA1606
SANYO : TO-220ML
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (–)180 V
Collector-to-Emitter Voltage VCEO (–)160 V
Emitter-to-Base Voltage VEBO (–)6 V
Collector Current IC (–)1.5 A
Collector Current (Pulse) ICP (–)3 A
Collector Dissipation PC Tc=25˚C 15 W
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C


Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(–)120V, IE=0 (–)10 µA
Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)10 µA
DC Current Gain hFE VCE=(–)5V, IC=(–)300mA 60* 200*
Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)50mA 100 MHz
Output Capacitance Cob VCB=(–)10V, f=1MHz (30)23 pF
Base-to-Emitter Voltage VBE VCE=(–)5V, IC=(–)10mA (–)1.5 V
* : The 2SA1606/2SC4159 are classified by 300mA hFE as follows : Continued on next page.

60 D 120 100 E 200

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/5277TA No.2535-1/4
2SA1606/2SC4159
www.DataSheet4U.com
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)500mA, IB=(–)50mA (–0.5) V
0.3 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)1mA, IE=0 (–)180 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(–)1mA, RBE=∞ (–)160 V
Emitter-to-Base Breakdown Votage V(BR)EBO IE=(–)1mA, IC=0 (–)6 V
Turn-ON Time ton See specified test circuit. (0.29) µs
See specified test circuit. 0.15 µs
Fall Time tf See specified test circuit. (0.19) µs
See specified test circuit. 0.48 µs
Storage Time tstg See specified test circuit. (0.48) µs
See specified test circuit. 0.81 µs

Switching Time Test Circuit

10IB1=–10IB2=IC=0.5A
PW=20µs
For PNP, the polarity is reversed.
Unit (resistance : Ω, capacitance : F)

No.2535-2/4
2SA1606/2SC4159
www.DataSheet4U.com

No.2535-3/4
2SA1606/2SC4159
www.DataSheet4U.com

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any and all SANYO products described or contained herein fall under strategic
products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of
Japan, such products must not be exported without obtaining export license from the Ministry of
International Trade and Industry in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of August, 1998. Specifications and information herein are subject to
change without notice.

PS No.2535-4/4

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