AOT8N80L/AOTF8N80

800V, 7.4A N-Channel MOSFET

General Description Product Summary

The AOT8N80L & AOTF8N80 have been fabricated using VDS 900V@150℃
an advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4A
designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.63Ω
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
100% UIS Tested
100% Rg Tested

Top View
D
TO-220 TO-220F

G
S S
D S
G D
G
AOT8N80L AOTF8N80

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol AOT8N80L AOTF8N80 Units
Drain-Source Voltage VDS 800 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 7.4 7.4*
ID
Current TC=100°C 4.6 4.6* A
Pulsed Drain Current C IDM 26
Avalanche Current C IAR 3.8 A
Repetitive avalanche energy C EAR 217 mJ
Single pulsed avalanche energy G EAS 433 mJ
Peak diode recovery dv/dt dv/dt 5 V/ns
TC=25°C 245 50 W
PD
Power Dissipation B Derate above 25oC 2.0 0.4 W/ oC
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C
Thermal Characteristics
Parameter Symbol AOT8N80L AOTF8N80 Units
Maximum Junction-to-Ambient A,D RθJA 65 65 °C/W
Maximum Case-to-sink A RθCS 0.5 -- °C/W
Maximum Junction-to-Case RθJC 0.51 2.5 °C/W
* Drain current limited by maximum junction temperature.

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 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 800
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=150°C 900 V
BVDSS Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V 0.86 V/ oC
/∆TJ
VDS=800V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
VDS=640V, TJ=125°C 10
IGSS Gate-Body leakage current VDS=0V, VGS=±30V ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA 3.3 3.9 4.5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4A 1.35 1.63 Ω
gFS Forward Transconductance VDS=40V, ID=4A 9 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 1 V
IS Maximum Body-Diode Continuous Current 7.4 A
ISM Maximum Body-Diode Pulsed Current 26 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1100 1375 1650 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 70 101 132 pF
Crss Reverse Transfer Capacitance 6 11 16 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 20 26 32 nC
Qgs Gate Source Charge VGS=10V, VDS=640V, ID=8A 7.3 nC
Qgd Gate Drain Charge 9.1 nC
tD(on) Turn-On DelayTime 35 ns
tr Turn-On Rise Time VGS=10V, VDS=400V, ID=8A, 51 ns
tD(off) Turn-Off DelayTime RG=25Ω 69 ns
tf Turn-Off Fall Time 41 ns
trr Body Diode Reverse Recovery Time IF=8A,dI/dt=100A/µs,VDS=100V 380 484 585 ns
Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V 4.5 6 7.5 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.8A, VDD=150V, RG=25Ω, Starting TJ=25°C

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev1.0: Sepetember 2017 www.aosmd.com Page 2 of 6

 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 100

10V VDS=40V
12 -55°C

6.5V
10
9
ID (A)

125°C

ID(A)
6V
6
5.5V 1

3 25°C
VGS=5V

0 0.1
0 5 10 15 20 25 30 2 4 6 8 10
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

3.0 3

2.5 Normalized On-Resistance 2.5

VGS=10V
2
RDS(ON) (Ω)

2.0
VGS=10V 1.5
1.5
1

1.0
0.5

0.5 0
0 2 4 6 8 10 12 -100 -50 0 50 100 150 200

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

1.2 1E+02

1E+01
1.1
BVDSS (Normalized)

1E+0040
125°C
1E-01
IS (A)

1 25°C
1E-02

1E-03
0.9

1E-04

0.8 1E-05
-100 -50 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0
TJ (°C) VSD (Volts)
Figure 5: Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics (Note E)

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 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000
VDS=640V
ID=8A Ciss
12
1000

Capacitance (pF)
Coss
VGS (Volts)

9
100
6
Crss

10
3

0 1
0 8 16 24 32 40 0.1 1 10 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 100

10µs 10µs
10 RDS(ON) 10 RDS(ON)
limited limited
100µs 100µs
ID (Amps)
ID (Amps)

1 1ms 1 1ms
DC
10ms 10ms
DC
0.1s
0.1 0.1
1s
TJ(Max)=150°C TJ(Max)=150°C
TC=25°C TC=25°C
0.01 0.01
1 10 100 1000 1 10 100 1000
VDS (Volts) VDS (Volts)
Figure 9: Maximum Forward Biased Safe Figure 10: Maximum Forward Biased Safe
Operating Area for AOT8N80L (Note F) Operating Area for AOTF8N80 (Note F)

10

8
Current rating ID(A)

0
0 25 50 75 100 125 150
TCASE (°C)
Figure 11: Current De-rating (Note B)

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 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJC=0.51°C/W
Thermal Resistance

0.1
PD

0.01 Single Pulse

Ton
T

0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N80L (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=2.5°C/W
Thermal Resistance

0.1
PD

0.01 Single Pulse

Ton
T

0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N80 (Note F)

Rev1.0: Sepetember 2017 www.aosmd.com Page 5 of 6

 Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ Vdd IRM
Vgs VDC
Vdd
Ig
- Vds

Rev1.0: Sepetember 2017 www.aosmd.com Page 6 of 6