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Depletion-Mode: Further Information: and

There are two main types of MOSFETs - enhancement-mode and depletion-mode. Depletion-mode MOSFETs have a channel that exists with zero gate voltage, and require a negative voltage to deplete the channel and reduce current flow. They are equivalent to a normally closed switch. Depletion-mode MOSFETs are less common than enhancement-mode but are sometimes preferred in radio frequency applications due to their low noise and better gain. Power MOSFETs have a vertical structure that allows them to sustain both high blocking voltages and currents, making them useful in power electronics.

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82 views

Depletion-Mode: Further Information: and

There are two main types of MOSFETs - enhancement-mode and depletion-mode. Depletion-mode MOSFETs have a channel that exists with zero gate voltage, and require a negative voltage to deplete the channel and reduce current flow. They are equivalent to a normally closed switch. Depletion-mode MOSFETs are less common than enhancement-mode but are sometimes preferred in radio frequency applications due to their low noise and better gain. Power MOSFETs have a vertical structure that allows them to sustain both high blocking voltages and currents, making them useful in power electronics.

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shohobi
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Depletion-mode[edit]

Further information: Depletion and enhancement modes and Depletion-load NMOS logic

There are depletion-mode MOSFET devices, which are less commonly used than the
standard enhancement-mode devices already described. These are MOSFET devices that
are doped so that a channel exists even with zero voltage from gate to source. To control the
channel, a negative voltage is applied to the gate (for an n-channel device), depleting the
channel, which reduces the current flow through the device. In essence, the depletion-mode
device is equivalent to a normally closed (on) switch, while the enhancement-mode device is
equivalent to a normally open (off) switch.[110]
Due to their low noise figure in the RF region, and better gain, these devices are often
preferred to bipolars in RF front-ends such as in TV sets.
Depletion-mode MOSFET families include BF960 by Siemens and Telefunken, and the
BF980 in the 1980s by Philips (later to become NXP Semiconductors), whose derivatives are
still used in AGC and RF mixer front-ends.

Metal–insulator–semiconductor field-effect transistor


(MISFET)[edit]
Metal–insulator–semiconductor field-effect-transistor, [111][112][113] or MISFET, is a more general
term than MOSFET and a synonym to insulated-gate field-effect transistor (IGFET). All
MOSFETs are MISFETs, but not all MISFETs are MOSFETs.
The gate dielectric insulator in a MISFET is silicon dioxide in a MOSFET, but other materials
can also be employed. The gate dielectric lies directly below the gate electrode and above
the channel of the MISFET. The term metal is historically used for the gate material, even
though now it is usually highly doped polysilicon or some other non-metal.
Insulator types may be:

 Silicon dioxide, in MOSFETs


 Organic insulators (e.g., undoped trans-polyacetylene; cyanoethyl pullulan, CEP[114]),
for organic-based FETs.[113]
Floating-gate MOSFET (FGMOS)[edit]
Main article: Floating-gate MOSFET

The floating-gate MOSFET (FGMOS) is a type of MOSFET where the gate is electrically


isolated, creating a floating node in DC and a number of secondary gates or inputs are
deposited above the floating gate (FG) and are electrically isolated from it. The first report of
a floating-gate MOSFET (FGMOS) was made by Dawon Kahng (co-inventor of the original
MOSFET) and Simon Sze in 1967.[115]
The FGMOS is commonly used as a floating-gate memory cell, the digital storage element
in EPROM, EEPROM and flash memories. Other uses of the FGMOS include a neuronal
computational element in neural networks, analog storage element, digital
potentiometers and single-transistor DACs.

Power MOSFET[edit]
Two power MOSFETs in D2PAK surface-mount packages. Operating as switches, each of these
components can sustain a blocking voltage of 120 V in the off state, and can conduct a continuous
current of 30 A in the on state, dissipating up to about 100 W and controlling a load of over 2000 W.
A matchstick is pictured for scale.

Cross section of a power MOSFET, with square cells. A typical transistor is constituted of several
thousand cells

Main article: Power MOSFET


See also: FET amplifier and Power electronics

Power MOSFETs have a different structure.[116] As with most power devices, the structure is
vertical and not planar. Using a vertical structure, it is possible for the transistor to sustain
both high blocking voltage and high current. The voltage rating of the transistor is a function
of the doping and thickness of the N-epitaxial layer (see cross section), while the current
rating is a function of the channel width (the wider the channel, the higher the current). In a
planar structure, the current and breakdown voltage ratings are both a function of the
channel dimensions (respectively width and length of the channel), resulting in inefficient use
of the "silicon estate". With the vertical structure, the component area is roughly proportional
to the current it can sustain, and the component thickness (actually the N-epitaxial layer
thickness) is proportional to the breakdown voltage. [117]
Power MOSFETs with lateral structure are mainly used in high-end audio amplifiers and
high-power PA systems. Their advantage is a better behaviour in the saturated region
(corresponding to the linear region of a bipolar transistor) than the vertical MOSFETs.
Vertical MOSFETs are designed for switching applications. [118]
The power MOSFET, which is commonly used in power electronics, was developed in the
early 1970s.[119] The power MOSFET enables low gate drive power, fast switching speed, and
advanced paralleling capability.[4]

Double-diffused metal–oxide–semiconductor (DMOS)[edit]


Main articles: Power MOSFET and LDMOS

There are VDMOS (vertical double-diffused metal oxide semiconductor) and LDMOS (lateral


double-diffused metal oxide semiconductor). Most power MOSFETs are made using this
technology.

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