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KTC3205 NPN Transistor Datasheet

This document provides specifications for the KTC3205 NPN silicon general purpose transistor. It is a RoHS compliant product with a hFE range of 100-200 or 160-320 depending on the product rank. Key features include low collector to emitter saturation voltage and suitability for audio power amplification and high current applications. Electrical characteristics including breakdown voltages, current ratings, and gain are provided.

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Richard Hernandez Ruiz
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274 views1 page

KTC3205 NPN Transistor Datasheet

This document provides specifications for the KTC3205 NPN silicon general purpose transistor. It is a RoHS compliant product with a hFE range of 100-200 or 160-320 depending on the product rank. Key features include low collector to emitter saturation voltage and suitability for audio power amplification and high current applications. Electrical characteristics including breakdown voltages, current ratings, and gain are provided.

Uploaded by

Richard Hernandez Ruiz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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KTC3205

NPN Silicon
Elektronische Bauelemente General Purpose Transistor

RoHS Compliant Product


A suffix of “-C” specifies halogen & lead-free

FEATURE TO-92L
 Low collector to emitter saturation voltage VCE(sat). G H

 Audio power amplifier


 High Current
J
1Emitter
A D 2Collector
3Base

CLASSIFICATION OF hFE Millimeter


REF.
B Min. Max.
Product-Rank KTC3205-O KTC3205-Y A 4.70 5.10
K B 7.80 8.20
C 13.80 14.20
Range 100~200 160~320 D 3.70 4.10
E 0.35 0.55
E C F F 0.35 0.45
G 1.27 TYP.
H 1.28 1.58
J 2.44 2.64
K 0.60 0.80
Collector
2

3
Base

1
Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)


Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 30 V
Collector to Emitter Voltage VCEO 30 V
Emitter to Base Voltage VEBO 5 V
Continuous Collector Current IC 2 A
Collector Power Dissipation PC 1 W
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)


Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=10mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=1mA, IC=0
Collector Cut - Off Current ICBO - - 0.1 µA VCB=30V, IE=0
Emitter cut-off current IEBO - - 0.1 µA VEB=5V, IC=0
DC Current Gain hFE 100 - 320 VCE=2V, IC=500mA
Collector to Emitter Saturation Voltage VCE(sat) - - 2 V IC=1.5A, IB=30mA
Base – Emitter Voltage VBE - - 1 V VCE=2V, IC=500mA
Transition Frequency fT - 120 - MHz VCE=2V, IC=500mA
Collector Output Capacitance Cob - 13 - pF VCB=10V, IE=0, f=1MHz

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

15-Nov-2012 Rev. A Page 1 of 1

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