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Eem212 Analog Electronics Questions 1

This document contains 12 practice problems about analog electronics and semiconductor properties. The problems cover topics like: 1) Drawing the energy band diagram of a p-n junction and calculating the potential barrier. 2) Calculating the variation of electron and hole concentrations in silicon and germanium with increasing temperature. 3) Listing the types, signs, and concentrations of charges in silicon doped with certain concentrations of arsenic and boron. 4) Describing the four types of currents that can exist across a p-n junction in thermal equilibrium. 5) Calculating the built-in potential of doped silicon with a given electron concentration.

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114 views4 pages

Eem212 Analog Electronics Questions 1

This document contains 12 practice problems about analog electronics and semiconductor properties. The problems cover topics like: 1) Drawing the energy band diagram of a p-n junction and calculating the potential barrier. 2) Calculating the variation of electron and hole concentrations in silicon and germanium with increasing temperature. 3) Listing the types, signs, and concentrations of charges in silicon doped with certain concentrations of arsenic and boron. 4) Describing the four types of currents that can exist across a p-n junction in thermal equilibrium. 5) Calculating the built-in potential of doped silicon with a given electron concentration.

Uploaded by

AweNervium
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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EEM212 ANALOG ELECTRONICS

QUESTIONS 1
Problem 1 A Si p-n junction has the following properties:

p-side n-side

NA=1017 cm-3 σn=2.16 S/cm

τn=0.1 μs τp=10 μs

μp=200 cm2/V.s μn=1350 cm2/V.s

μn=700 cm2/V.s μp=450 cm2/V.s

lp=10 μm ln=10 μm

EG=1.12 eV; A=10-4 cm2; ni=1010 cm-3; εr=11.8, T=300 K.

Under equilibrium, draw the energy band diagram of the p-n junction and show the Fermi energy
levels with respect to the half of the bandgap. Calculate potential barrier.

Problem 2 Find the variation of the electron and hole concentrations in Si and Ge
semiconductor materials with the temperature when temperature rises from i) 0 K to ii) 300 K
and iii) 400 K respectively. Assume donar doping concentration is:

a) 1013 cm-3 for each material

b) 1015 cm-3 for each material

Problem 3
Problem 4

Problem 5
List the type (holes, electrons, ions), sign (+/-) and concentrations of all charges in silicon
doped with1017/cm3 As and 1015/cm3 Boron. Be sure to mention whether each charge is mobile or
not.

Problem 6 What are the four types of currents you can find across a p-n junction in thermal
equilibrium?

Problem 7 You are given doped silicon that at thermal equilibrium has an electron
concentration 1016/cm3. What is the built-in potential with reference to intrinsic silicon?

Problem 8 What happens to ni if the temperature increases? Give a brief qualitative


explanation.

Problem 9 What is the concentration of holes, electrons and positive/gnegative ions if Si is


doped with 1017 Boron atoms/cm3, and 1019 As atoms/cm3 at room temperature? (ni = 1010)

Problem 10 A piece of silicon is doped with Na = 2x1015 cm-3 and Nd = 1x1015 cm-3
a) What is the majority carrier? Is the silicon type n or type p?
b) Find the electron and hole concentration and mobility at room temperature.
c) We want increase the electron concentration to 1x1017 cm-3. What is the
additional dopant type and concentration?
Problem 11

Problem 12

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