HiPerFETTM Power MOSFETs IXFR 4N100Q VDSS = 1000 V
ISOPLUS247TM ID25 = 3.5 A
RDS(on) = 3.0 Ω
(Electrically Isolated Backside)
trr ≤ 200ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Preliminary Data
Symbol Test Conditions Maximum Ratings ISOPLUS 247TM
E153432
VDSS TJ = 25°C to 150°C 1000 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V Isolated backside*
ID25 TC = 25°C 3.5 A
IDM TC = 25°C, Note 1 16 A
IAR TC = 25°C 4 A G = Gate D = Drain
S = Source
EAR TC = 25°C 20 mJ
EAS TC = 25°C 700 mJ * Patent pending
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns
TJ ≤ 150°C, RG = 2 Ω
PD TC = 25°C 80 W Features
z
Silicon chip on Direct-Copper-Bond
TJ -55 ... +150 °C
substrate
TJM 150 °C - High power dissipation
Tstg -55 ... +150 °C - Isolated mounting surface
- 2500V electrical isolation
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C z
Low drain to tab capacitance(<30pF)
VISOL 50/60 Hz, RMS t = 1 min 2500 V~ z
Low RDS (on) HDMOSTM process
z
Weight 5 g Rugged polysilicon gate cell structure
z
Rated for Unclamped Inductive Load
Switching (UIS)
z
Fast intrinsic Rectifier
Symbol Test Conditions Characteristic Values Applications
z
(TJ = 25°C, unless otherwise specified) DC-DC converters
min. typ. max. z
Battery chargers
z
VDSS VGS = 0 V, ID = 1mA 1000 V Switched-mode and resonant-mode
power supplies
VGS(th) VDS = VGS, ID = 1.5 mA 3.0 5.0 V z
DC choppers
z
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA AC motor control
IDSS VDS = VDSS TJ = 25°C 50 µA Advantages
VGS = 0 V TJ = 125°C 1 mA z
Easy assembly
z
RDS(on) VGS = 10 V, ID = IT 3.0 Ω Space savings
Notes 2, 3 z
High power density
© 2002 IXYS All rights reserved DS98860A(12/02)
IXFR 4N100Q
Symbol Test Conditions Characteristic Values
ISOPLUS 247TM Outline
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs V DS = 10 V; ID = IT Notes 2, 3 1.5 2.5 S
Ciss 1050 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 120 pF
Crss 30 pF
td(on) 17 ns
tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 15 ns
td(off) RG = 2 Ω (External), Notes 2, 3 32 ns
Terminals: 1 - Gate
tf 18 ns 2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Qg(on) 39 nC
Dim. Millimeter Inches
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 9 nC Min. Max. Min. Max.
Notes 2, 3 A 4.83 5.21 .190 .205
Qgd 22 nC A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085
RthJC 1.57 K/W b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084
b2 2.92 3.12 .115 .123
RthCK 0.15 K/W
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Source-Drain Diode Characteristic Values
Q 5.59 6.20 .220 0.244
(TJ = 25°C, unless otherwise specified) R 4.32 4.83 .170 .190
Symbol Test Conditions min. typ. max.
IS VGS = 0 V 4 A See IXFH4N100Q data sheet for
Characterisitic curves.
ISM Repetitive; Note 1 16 A
VSD IF = IS, VGS = 0 V, Notes 2, 3 1.5 V
t rr 250 ns
QRM 0.52 µC
IF = 50A,-di/dt = 100 A/µs, VR = 100 V
IRM 1.8 A
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IT = 2 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
