PESD5V0V1BA; PESD5V0V1BB;

PESD5V0V1BL
Very low capacitance bidirectional ESD protection diodes
Rev. 01 — 28 July 2009 Product data sheet

1. Product profile

1.1 General description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.

Table 1. Product overview

Type number Package Package configuration
NXP JEITA
PESD5V0V1BA SOD323 SC-76 very small
PESD5V0V1BB SOD523 SC-79 ultra small and flat lead
PESD5V0V1BL SOD882 - leadless ultra small

1.2 Features
n Bidirectional ESD protection of one line n ESD protection up to 30 kV
n Very low diode capacitance: Cd = 11 pF n IEC 61000-4-2; level 4 (ESD)
n Max. peak pulse power: PPP = 45 W n IEC 61000-4-5 (surge); IPP = 4.8 A
n Low clamping voltage: VCL = 12.5 V n AEC-Q101 qualified
n Ultra low leakage current: IRM < 1 nA

1.3 Applications
n Computers and peripherals n Communication systems
n Audio and video equipment n Portable electronics
n Cellular handsets and accessories n 10/100 Mbit/s Ethernet
n Subscriber Identity Module (SIM) card n FireWire
protection

1.4 Quick reference data

Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5 V
Cd diode capacitance f = 1 MHz; VR = 0 V - 11 13 pF
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
PESD5V0V1BA; PESD5V0V1BB
1 cathode (diode 1) [1]

2 cathode (diode 2) 1 2
1 2
sym045
001aab540

PESD5V0V1BL
1 cathode (diode 1) [1]

2 cathode (diode 2) 1 2
1 2
sym045
Transparent
top view

[1] The marking bar indicates pin 1.

3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
PESD5V0V1BA SC-76 plastic surface-mounted package; 2 leads SOD323
PESD5V0V1BB SC-79 plastic surface-mounted package; 2 leads SOD523
PESD5V0V1BL - leadless ultra small plastic package; 2 terminals; SOD882
body 1.0 × 0.6 × 0.5 mm

4. Marking
Table 5. Marking codes
Type number Marking code
PESD5V0V1BA 1K
PESD5V0V1BB Z9
PESD5V0V1BL X1

5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPP peak pulse power tp = 8/20 µs [1] - 45 W
IPP peak pulse current tp = 8/20 µs [1] - 4.8 A

PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 28 July 2009 2 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

Table 6. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
Tj junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

Table 7. ESD maximum ratings

Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
VESD electrostatic discharge voltage IEC 61000-4-2 [1] - 30 kV
(contact discharge)
machine model - 2 kV
MIL-STD-883 (human - 16 kV
body model)

[1] Device stressed with ten non-repetitive ESD pulses.

Table 8. ESD standards compliance

Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3B (human body model) > 8 kV

001aaa631

001aaa630 IPP
120
100 %

100 % IPP; 8 µs 90 %
IPP
(%)

80
e−t

50 % IPP; 20 µs

40

10 %

tr = 0.7 ns to 1 ns t
0
0 10 20 30 40 30 ns
t (µs) 60 ns

Fig 1. 8/20 µs pulse waveform according to Fig 2. ESD pulse waveform according to
IEC 61000-4-5 IEC 61000-4-2

PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 28 July 2009 3 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5 V
IRM reverse leakage current VRWM = 5 V - <1 10 nA
VBR breakdown voltage IR = 5 mA 5.8 6.8 7.8 V
Cd diode capacitance f = 1 MHz; - 11 13 pF
VR = 0 V
VCL clamping voltage IPP = 4.8 A [1] - - 12.5 V
rdif differential resistance IR = 5 mA - - 35 Ω

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

006aab606 001aaa193
103 1.2

PPP PPP
(W) PPP(25°C)

102 0.8

10 0.4

1 0
1 10 102 103 0 50 100 150 200
tp (µs) Tj (°C)

Tamb = 25 °C
Fig 3. Peak pulse power as a function of exponential Fig 4. Relative variation of peak pulse power as a
pulse duration; typical values function of junction temperature; typical
values

PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 28 July 2009 4 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

006aab607 006aab608
12 103
IRM

Cd IRM(25°C)
(pF) 102

10
10

1
8

10−1

6 10−2
0 1 2 3 4 5 −100 −50 0 50 100 150
VR (V) Tj (°C)

f = 1 MHz; Tamb = 25 °C
Fig 5. Diode capacitance as a function of reverse Fig 6. Relative variation of reverse leakage current
voltage; typical values as a function of junction temperature; typical
values

IPP

IR
−VCL −VBR −VRWM IRM
−IRM VRWM VBR VCL
−IR

− +

−IPP
006aaa676

Fig 7. V-I characteristics for a bidirectional ESD protection diode

PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 28 July 2009 5 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

ESD TESTER 4 GHz DIGITAL

acc. to IEC 61000-4-2 OSCILLOSCOPE
CZ = 150 pF; RZ = 330 Ω RG 223/U
RZ 450 Ω 50 Ω coax
10×
ATTENUATOR
CZ 50 Ω
DUT
(DEVICE
UNDER
TEST)

vertical scale = 10 A/div vertical scale = 10 V/div

horizontal scale = 15 ns/div horizontal scale = 100 ns/div

GND

GND

unclamped +8 kV ESD pulse waveform clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) (IEC 61000-4-2 network)

vertical scale = 10 A/div vertical scale = 10 V/div

horizontal scale = 15 ns/div horizontal scale = 100 ns/div

GND

GND

unclamped −8 kV ESD pulse waveform clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network) (IEC 61000-4-2 network) 006aab609

Fig 8. ESD clamping test setup and waveforms

PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 28 July 2009 6 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

7. Application information
The PESD5V0V1Bx series is designed for the protection of one bidirectional data or
signal line from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are both, positive or negative with respect to ground.
The PESD5V0V1Bx series provides a surge capability of 45 W per line for an 8/20 µs
waveform.

line to be protected

PESD5V0V1Bx

GND

006aab610

Fig 9. Application diagram

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.

PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 28 July 2009 7 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

9. Package outline

1.35 1.1 0.85 0.65

1.15 0.8 0.75 0.58

1 0.45 1
0.15

2.7 1.8 1.65 1.25

2.3 1.6 1.55 1.15

2 2
0.40 0.25 0.34 0.17
0.25 0.10 0.26 0.11
Dimensions in mm 03-12-17 Dimensions in mm 02-12-13

Fig 10. Package outline Fig 11. Package outline

PESD5V0V1BA (SOD323/SC-76) PESD5V0V1BB (SOD523/SC-79)

0.62 0.50
0.55 0.46

0.30 2
0.22

0.65 1.02
0.95

0.30
0.22 1

0.55 cathode marking on top side

0.47

Dimensions in mm 03-04-17

Fig 12. Package outline PESD5V0V1BL (SOD882)

10. Packing information

Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 8000 10000
PESD5V0V1BA SOD323 4 mm pitch, 8 mm tape and reel -115 - -135
PESD5V0V1BB SOD523 2 mm pitch, 8 mm tape and reel - -315 -
4 mm pitch, 8 mm tape and reel -115 - -135
PESD5V0V1BL SOD882 2 mm pitch, 8 mm tape and reel - - -315

[1] For further information and the availability of packing methods, see Section 14.

PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 28 July 2009 8 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

11. Soldering

3.05

2.1

solder lands

solder resist
1.65 0.95 0.5 (2×) 0.6 (2×)
solder paste

occupied area

2.2 Dimensions in mm
0.5
(2×)
0.6
(2×) sod323_fr

Fig 13. Reflow soldering footprint PESD5V0V1BA (SOD323/SC-76)

2.9

1.5 (2×)
solder lands

solder resist

occupied area

1.2
2.75 Dimensions in mm
(2×)

preferred transport
direction during soldering

sod323_fw

Fig 14. Wave soldering footprint PESD5V0V1BA (SOD323/SC-76)

PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 28 July 2009 9 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

2.15

1.1

solder lands

solder resist
0.5 0.6
1.2
(2×) (2×)
solder paste

occupied area

0.7 Dimensions in mm
(2×)
0.8
(2×) sod523_fr

Reflow soldering is the only recommended soldering method.

Fig 15. Reflow soldering footprint PESD5V0V1BB (SOD523/SC-79)

1.3

0.7 R0.05 (8×)

solder lands

0.6 0.7 solder resist

0.9
(2×) (2×)
solder paste

occupied area

0.3
Dimensions in mm
(2×)
0.4
(2×)

sod882_fr

Reflow soldering is the only recommended soldering method.

Fig 16. Reflow soldering footprint PESD5V0V1BL (SOD882)

PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 28 July 2009 10 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

12. Revision history

Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V0V1BA_BB_BL_1 20090728 Product data sheet - -

PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 28 July 2009 11 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

13. Legal information

13.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in Applications — Applications that are described herein for any of these
modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no
representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the
information included herein and shall have no liability for the consequences of specified use without further testing or modification.
use of such information. Limiting values — Stress above one or more limiting values (as defined in
Short data sheet — A short data sheet is an extract from a full data sheet the Absolute Maximum Ratings System of IEC 60134) may cause permanent
with the same product type number(s) and title. A short data sheet is intended damage to the device. Limiting values are stress ratings only and operation of
for quick reference only and should not be relied upon to contain detailed and the device at these or any other conditions above those given in the
full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting
sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability.
office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale — NXP Semiconductors products are sold
full data sheet shall prevail. subject to the general terms and conditions of commercial sale, as published
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reliable. However, NXP Semiconductors does not give any representations or
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limitation specifications and product descriptions, at any time and without
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notice. This document supersedes and replaces all information supplied prior
to the publication hereof. Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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authorized or warranted to be suitable for use in medical, military, aircraft,
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Notice: All referenced brands, product names, service names and trademarks
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14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 28 July 2009 12 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes

15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 7
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 July 2009
Document identifier: PESD5V0V1BA_BB_BL_1