TDA1910

10W AUDIO AMPLIFIER WITH MUTING

DESCRIPTION
The TDA 1910 is a monolithic integrated circuit in
MULTIWATT package, intended for use in Hi-Fi
audio power applications, as high quality TV sets.
The TDA 1910 meets the DIN 45500 (d = 0.5%)
guaranteed output power of 10W when used at
24V/4W. At 24V/8W the output power is 7W min.
Features:
– muting facility Multiwatt 11
– protection against chip over temperature
– very low noise ORDERING NUMBERS:
– high supply voltage rejection
TDA1910 (Multiwatt11 Vertical)
– low ”switch-on” noise. TDA1910HS (Multiwatt11 Horizontal)
The TDA 1910 is assembled in MULTIWATT
package that offers:
– easy assembly – space and cost saving
– simple heatsink – high reliability

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
Vs Supply voltage 30 V
Io Output peak current (non repetitive) 3.5 A
Io Output peak current (repetitive) 3.0 A
Vi Input voltage 0 to + Vs V
Vi Differential input voltage ±7 V
V11 Muting thresold voltage Vs V
P tot Power dissipation at Tcase = 90°C 20 W
Tstg, Tj Storage and junction temperature -40 to 150 °C

TEST CIRCUIT

(*) See fig. 13.

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TDA1910

PIN CONNECTION (Top view)

SCHEMATIC DIAGRAM

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TEST CIRCUIT

(*) See fig. 13.

MUTING CIRCUIT

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THERMAL DATA
Symbol Parameter Value Unit
Rth j-case Thermal resistance junction-case max 3 °C/W

ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Tamb = 25 °C, Rth (heatsink)= 4°C/W, unless
otherwise specified)
Symbol Parameter Test condition Min. Typ. Max. Unit

Vs Supply voltage 8 30 V

Vo Quiescent output voltage Vs = 18V 8.3 9.2 10

V
Vs = 24V 11.5 12.4 13.4

Id Quiescent drain current Vs = 18V 19 32

mA
Vs = 24V 21 35

VCE sat Output stage saturation voltage IC = 2A 1

V
IC = 3A 1.6

Po Output power d = 0.5% f = 40 to 15,000Hz

Vs = 18V R L= 4Ω 6.5 7
W
Vs = 24V R L = 4Ω 10 12
Vs = 24V R L = 8Ω 7 7.5

d = 10% f = 1 KHz
8.5 9.5
Vs = 18V R L = 4Ω
15 17
Vs = 24V R L = 4Ω
9 10
Vs = 24V R L = 8Ω

Harmonic distortion f = 40 to 15,000 Hz

d
Vs = 18V R L = 4Ω
0.2 0.5
Po = 50 mW to 6.5W
Vs = 24V R L = 4Ω 0.2 0.5 %
Po = 50 mW to 10W
Vs = 24V R L = 8Ω
Po = 50 mW to 7W 0.2 0.5

d Intermodulation distortion Vs = 24V RL = 4Ω Po = 10W

f1 = 250 Hz f2 = 8 KHz 0.2 %
(DIN 45500)

F = 1 KHz,
Vs = 18V RL = 4Ω Po = 7 W 170
Vi Input sensitivity mV
vs = 24V RL = 4Ω Po = 12 W 220
Vs = 24V RL = 8Ω Po = 7.5W 245

Vi Input saturation voltage (rms) Vs = 18V 1.8

V
Vs = 24V 2.4

Ri Input resistance (pin 5) f = 1 KHz 60 100 KΩ

Id Drain current Vs = 24V f = 1 KHz

RL = 4Ω Po = 12W 820 mA
RL = 8Ω Po = 7.5W 475

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ELECTRICAL CHARACTERISTICS (continued)

Symbol Parameter Test condition Min. Typ. Max. Unit

h Efficiency Vs = 24V f = 1 KHz

R L = 4Ω Po = 12W 62 %
R L = 8Ω Po = 7.5W 65

BW Small signal bandwidth Vs = 24V RL = 4Ω Po = 1W 10 to 120,000 Hz

BW Power bandwidth Vs = 24V RL = 4Ω

40 to 15,000 Hz
Po = 12W d ≤ 5%

Gv Voltage gain (open loop) f = 1 KHz 75 dB

Gv Voltage gain (closed loop) Vs = 24V RL = 4Ω

29.5 30 30.5 dB
f = 1 KHz Po = 1W

eN Total input noise Rg = 50Ω 1.2 3.0

Rg = 1KΩ (°) 1.3 3.2 µV
Rg = 10KΩ 1.5 4.0

Rg = 50Ω 2.0 5.0

Rg = 1KΩ (°°) 2.0 5.2 µV
Rg = 10KΩ 2.2 6.0

S/N Signal to noise ratio Vs = 24V Rg = 10KΩ 103

dB
Po = 12W Rg = 0 (°) 97 105
RL = 4Ω
Rg = 10KΩ 100
dB
Rg = 0 (°°) 93 100

SVR Supply voltage rejection Vs = 24V RL = 4Ω 50 60 dB

fripple = 100 Hz Rg = 10 KΩ

Tsd Thermal sjut-down case (*) Ptot = 8W 110 125 °C

temperature

MUTING FUNCTION (Refer to Muting circuit)

VT Muting-off threshold voltage 1.9 4.7 V
(pin 11)

Muting-on threshold voltage 0 1.3

VT V
(pin 11)
6 Vs

R1 Input resistance (pin 1) Muting off 80 200 KΩ

Muting on 10 30 Ω

R11 Input resistance (pin 11) 150 KΩ

AT Muting attenuation Rg + R 1 = 10 KΩ 50 60 dB

Note :
(°) Weighting filter = curve A.
(° °) Filter with noise bandwidth: 22 Hz to 22 KHz.
(*) See fig. 29 and fig. 30.

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Figure 1. Quiescent output Figure 2. Quiescent drain Figure 3. Open loop fre-
voltage vs. supply voltage current vs. supply voltage quency response

Figure 4. Output power vs. Figure 5. Output power vs. F i gure 6 . Dis torti on vs.
supply voltage supply voltage output power

F i gure 7 . Dis torti on vs. Figure 8. Output power vs. Figure 9. Output power vs.
output power frequency frequency

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Figure 10. Output power vs. Figure 11. Output power vs. Figure 12. Total input noise
input voltage input voltage vs. source resistance

Figure 13. Values of capaci- Figure 14. Supply voltage Figure 15. Supply voltage
tor CX vs. bandwidth (BW) rejection vs. voltage gain r e je c ti o n v s . s o urc e
and gain (GV) resistance

Figure 16. Power dissipa- Figure 17. Power dissipa- F i gu re 1 8. Ma x p o we r

tion and efficiency vs. output tion and efficiency vs. output d i ssi p a ti o n v s. sup pl y
power power voltage

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APPLICATION INFORMATION

Figure 19. Application circuit without muting Figure 20. PC board and component lay-out of
the circuit of fig. 19 (1:1 scale)

Figure 21. Application circuit with muting Performance (circuits of fig. 19 and 21)
Po = 12W (40 to 15000 Hz, d ≤ 0.5%)
Vs = 24V
Id = 0.82A
Gv = 30 dB

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APPLICATION INFORMATION (continued)

Figure 22. Two position DC tone control (10 dB boost 50 Hz and Figu re 23 . Fre quenc y re-
20 KHz) using change of pin 1 resistance (muting function) sponse of the circuit of fig. 22

Figure 24. 10 dB 50 Hz boos tone control using change of pin 1 Figu re 25 . Fre quenc y re-
resistance (muting function) sponse of the circuit of fig. 24

Figure 26. Squelch function in TV applications Figure 27. Delayed muting circuit

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MUTING FUNCTION
The output signal can be inhibited applying a DC voltage VT to pin 11, as shown in fig. 28

Figure 28

The input resistance at pin 1 depends on the threshold voltage VT at pin 11 and is typically.

R1 = 200 KΩ @ 1.9V ≤ VT ≤ 4.7V muting-off

R1 = 10 Ω 0V ≤ VT ≤ 1.3V
@ 6V ≤ VT ≤ Vs muting-on

Referringto the following input stage, the possible attenuationof the input signal and therefore of the output
signal can be found using the following expression.

Vi Rg + R5 ⁄ ⁄ R1
AT = =
V5 R5 ⁄ ⁄ R1

where R5 ≅ 100 KΩ

Considering Rg = 10 KΩ the attenuation in the - during commutations at the input stages.

muting-on condition is typically AT = 60 dB. In the - during the receiver tuning.
muting-off condition, the attenuation is very low,
typically 1.2 dB. The variable impedance capability at pin 1 can be
useful in many applications and we have shown 2
A very low current is necessary to drive the thresh- examples in fig. 22 and 24, where it has been used
old voltage VT because the input resistance at pin to change the feedback network, obtaining 2 differ-
11 is greater than 150 KΩ. The muting function can ent frequency responses.
be used in many cases,when a temporaryinhibition
of the output signal is requested, for example:
- in switch-on condition, to avoid preamplifier
power-on transients (see fig. 27)

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APPLICATION SUGGESTION
The recommended values of the components are those shown on application circuit of fig. 21. Different
values can be used.
The following table can help the designer.

Raccom. Larger than Smaller than Allowed range

Component Purpose
value recommended value recommended value
Min. Max.

Rg + R 1 10KΩ Input signal imped. Increase of the atte- Decrease of the

for muting operation nuation in muting-on attenuation in muting
condition. Decrease on condition.
of the input sensitivity.

R2 3.3KΩ Close loop gain Increase of gain. Decrease of gain. 9 R3

setting. Increase quiescent
current.

R3 100Ω Close loop gain Decrease of gain. Increase of gain. R 2/9

setting.

R4 1Ω Frequency stability Danger of oscillation

at high frequencies
with inductive loads.

P1 20KΩ Volume Increase of the Decrease of the input 10KΩ 100KΩ

potentiometer. switch-on noise. impedance and of the
input level.

C1 1 µF Input DC decoupling. Higher low frequency

C2 1 µF cutoff.
C3 0.22µF

C4 2.2µF Inverting input DC Increase of the Higher low frequency 0.1µF

decoupling. switch-on noise. cutoff.

C5 0.1µF Supply voltage Danger of oscillations.

bypass.

C6 10µF Ripple rejection. Increase of SVR. Degradation of 2.2µF 100µF

Increase of the SVR
switch-on time

C7 47µF Bootstrap. Increase of the distor- 10µF 100µF

tion at low frequency.

C8 0.22µF Frequency stability. Danger of oscillation.

C9 2200µF Output DC Higher low frequency

(RL = 4Ω) decoupling. cutoff.
1000 µF
(RL = 8Ω)

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THERMAL SHUT-DOWN circuit. There is no possibility of device damage

due to high junction temperature.
The presence of a thermal limiting circuit offers the If for any reason, the junction temperature in-
following advantages: creases up to 150°C, the thermal shut-down
simply reduces the power dissipation and the
1) An overload on the output (even if it is perma- current consumption.
nent), or an above limit ambient temperature
can be easily supported since the T j cannot be
higher than 150°C. The maximum allowable power dissipation de-
pends upon the size of the externalheatsink (i.e. its
thermal resistance); fig. 31 shows this dissipable
2) The heatskink can have a smaller factor of power as a function of ambient temperature for
safety compared with that of a conventional different thermal resistance.

Figure 29. Output power and Figure 30. Output power and Figure31. Maximumallow able
d r ai n c u rr e n t vs . c ase d ra i n c u rr e nt vs . cas e power dissipation vs. ambient
temperature temperature temperature

MOUNTING INSTRUCTIONS
The power dissipated in the circuit must be re- spring (clip) being sufficient. Between the heatsink
moved by adding an external heatsink. and the package it isbetterto insert a layer of silicon
Thanks to the Multiwatt package attaching the grease, to optimize the thermal contact; no electri-
heatsink is very simple, a screw or a compression cal isolation is needed between the two surfaces.

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MULTIWATT 11 VERTICAL PACKAGE MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5 0.197
B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022
F 0.88 0.95 0.035 0.037
G 1.57 1.7 1.83 0.062 0.067 0.072
G1 16.87 17 17.13 0.664 0.669 0.674
H1 19.6 0.772
H2 20.2 0.795
L 21.5 22.3 0.846 0.878
L1 21.4 22.2 0.843 0.874
L2 17.4 18.1 0.685 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114
M 4.1 4.3 4.5 0.161 0.169 0.177
M1 4.88 5.08 5.3 0.192 0.200 0.209
S 1.9 2.6 0.075 0.102
S1 1.9 2.6 0.075 0.102
Dia1 3.65 3.85 0.144 0.152

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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
 1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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