Latch-Up

LATCH-UP CIRCUIT
Latch-up is caused by an SCR (Silicon Controlled Rectifier) circuit. Fabrication of CMOS
integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of
this SCR is similar in principle to a true SCR. These structures result from the multiple diffusions
needed for the formation of complementary MOS transistors in CMOS processing. The SCR
structure consists of a four-layer device formed by diffused PNPN regions. These four layers
create parasitic bipolar transistors illustrated in Figure 1.

Figure 1. Parasitic Bipolar Transistors 14105C-001

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Figure 2 shows a typical CMOS inverter layout with the schematic of the parasitic bipolar SCR
structure. Figure 3 is a cross-sectional representation of the CMOS inverter, again with the
schematic of the bipolar SCR structure.
Any CMOS diffusion can become part of the parasitic SCR structure, since all of these parts are
interconnected through the bulk silicon substrate resistance. Other parasitic resistors shown
result from doped regions of the semiconductor. The magnitude to which the resistors resist
current flow depends upon geometric size and doping level.
As illustrated in Figure 1, the complementary PNP and NPN transistors are cross-coupled, having
common base-collector regions. The vertical PNP device, M1, has its base composed of the N-
well diffusion, while the emitter and collector are formed from P-type source-drain and substrate
regions, respectively. The lateral bipolar transistor, M2, base is the P substrate with emitter and
collector junctions formed from N-type source-drain and N-well diffusions, respectively.

Publication# 14105 Rev: C

Amendment/0 Issue Date: November 1998
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Figure 2. Typical CMOS Inverter Layout

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Figure 3. Cross Section of CMOS Inverter

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Latch-Up Conditions
Under normal bias conditions, the SCR conducts only leakage current, and the SCR structure is
in the blocking state. However, as current flows across any of the parasitic resistors, a voltage
drop is developed, turning on the parasitic bipolar base-emitter junction. The forward bias
condition of this junction allows collector current to flow in the bipolar transistor. This collector
current flows across the base-emitter resistor of the complementary bipolar transistor, creating a
voltage sufficient to turn on the transistor.
A regenerative loop is now created between the complementary bipolar transistors such that
current conduction becomes self-sustaining. Even after removal of the stimulus that triggered this
action, the current conduction can continue. This region of operation is a high-current, low-
resistance condition characteristic of a four-layer PNPN structure. This is referred to as latch-up.
Once initiated, the excessive latch-up current can permanently damage an integrated circuit by
fusing metal lines or destroying junctions.

CAUSES OF LATCH-UP
Latch-up may be initiated in numerous ways. Only the critical causes frequently encountered in
a system environment will be discussed. These include power-up, supply overvoltage, and
overshoot/undershoot at device pins.

Power-Up
Caution must be exercised when powering up most CMOS ICs to avoid driving device pins
before the supply voltage has been applied to the circuit. Placing a device or board in a “hot
socket” will create this situation. When subjected to hot-socket insertion, voltage conditions at
the device pins are uncertain such that the input diodes may be forward biased. Forward biasing
the input diodes with a delayed or uncontrolled application of VCC could cause the device to
latch up. Some of Vantis’ CMOS circuits have substantial immunity to hot socket power-up, but
since this condition is uncertain and difficult to characterize, test, and guarantee, it should be
avoided. Vantis’ MACH®4 and MACH 5 devices have been designed to be hot socketable and

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will not latch up.

Supply Overvoltage
Supply levels exceeding the absolute maximum rating can cause a CMOS circuit to latch up.
Elevated supply voltage may cause internal junctions to break down, producing substrate current
capable of triggering latch-up. Latch-up is one of the reasons overvoltage should be avoided;
other undesirable effects may result from this.

Overshoot/Undershoot
Generally, the I/O pins experience the noisiest electrical environment. Fast switching signals
with a large capacitive load may overshoot, creating a transient forward bias condition at the
I/O junction. These junction diodes are illustrated in Figures 4 and 5. Typically, this is where
latch-up is most likely to be induced. Proper design of the input and output buffers is essential
to minimize the risk of latch-up due to overshoot.

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Figure 4. Junction Diode

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Figure 5. Junction Diode

TESTING FOR LATCH-UP

Vantis characterizes the latch-up sensitivity of its devices before they are released to the market.
Testing is done in such a way as to completely cover every possible latch-up condition, including
VCC overvoltage, pin overcurrent, and pin overvoltage.

VCC Overvoltage Test

The VCC overvoltage test is applied to all power (VCC) pins. The test is performed at the highest
guaranteed operating temperature of the device. All inputs and I/Os acting as inputs are tied to
ground or VCC depending on the device logic, and outputs and I/Os acting as outputs are
floating (open).
VCC max is applied to the VCC pin. A positive high voltage pulse is then applied to the VCC pin
and returned to VCC max. The occurrence of latch-up is detected if the voltage across the device
is less than VCC max, and the current through the device is greater than the normal DC operating
current.

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Pin Overcurrent Test
The pin overcurrent test is performed on every output, I/O pin, and non-current-limited input
pin. Non-current-limited inputs are inputs which present a diode-like (or otherwise “infinite”)
current characteristic for input voltages in the range (GND – VCC(TYP)) < VIN < (2 x VCC(TYP)).
The pin overcurrent test is performed at the highest guaranteed operating temperature of the
device. Input pins and I/O pins acting as inputs (which are not under test) are tied to ground
or VCC depending on the device logic, and outputs and I/Os acting as outputs should be floating
(open). VCC max is applied to the VCC pin.
One pin is tested at a time. A three-state output under test should be disabled. A non-three-state
output type under test should be a logic High when applying a positive current and a logic Low
when applying a negative current. An I/O pin should be placed into the input mode.
A high current pulse is then applied to the pin under test. The magnitude of the pulse is stepped
until latch-up is induced. Both positive and negative currents are tested. Latch-up is observed as
described previously. The sensitivity of the device is the worst case sensitivity found on any pin
of the device.

Pin Overvoltage Test

The pin overvoltage test is performed on current-limited inputs. Current-limited inputs are inputs
which present a resistor-like (or otherwise “limited”) current characteristic for input voltages in
the range (GND – VCC(TYP)) < VIN < (2 x VCC(TYP)).
The pin overvoltage test is performed at the highest guaranteed operating temperature of the
device. Input pins and I/O pins acting as inputs (which are not under test) are tied to ground
or VCC depending on the device logic, and outputs and I/Os acting as outputs are floating
(open). VCC max is applied to the VCC pin.
One pin is tested at a time. Both positive and negative voltage pulses are applied to the pin
under test. Latch-up is observed as described previously. The sensitivity of the device is the
worst-case sensitivity found on any pin of the device.

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