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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The 2SC2837 is a silicon NPN power transistor in a TO-3PN package for audio and general purpose applications. It has an absolute maximum collector-base voltage of 150V and collector current of 10A. Key characteristics include a DC current gain of 50-180, collector-emitter saturation voltage below 2.0V at 5A collector current, and transition frequency above 70MHz.

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65 views4 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The 2SC2837 is a silicon NPN power transistor in a TO-3PN package for audio and general purpose applications. It has an absolute maximum collector-base voltage of 150V and collector current of 10A. Key characteristics include a DC current gain of 50-180, collector-emitter saturation voltage below 2.0V at 5A collector current, and transition frequency above 70MHz.

Uploaded by

Mare Inter
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC2837

DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1186

APPLICATIONS
·For audio and general purpose applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 150 V

VCEO Collector-emitter voltage Open base 150 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 10 A

IB Base current 2 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC2837

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 150 V

VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V

ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA

IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA

hFE DC current gain IC=3A ; VCE=4V 50

fT Transition frequency IE=-1A ; VCE=12V 70 MHz

COB Collector output capacitance f=1MHz;VCB=80V 60 pF

Switching times

ton Turn-on time 0.2 µs

IC=5A
ts Storage time IB1=-IB2=0.5A 1.4 µs
VCC=60V, RL=12B

tf Fall time 0.35 µs

hFE Classifications

O P Y

50-100 70-140 90-180

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC2837

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)

3
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC2837

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