MECGaNSCTRMX

X-Band GaN Single-Chip Transceiver Frontend

Main Features

 0.25µm GaN HEMT Technology

 8.6 – 11.2 GHz full performance Frequency Range
 Chip Size: 3.0 x 3.0 x 0.10 mm3

Tx chain (pulsed)
 Gain: 22 dB
 Psat: 39 dBm
 PAE: 25%
Product Description  Bias: Vd = 30V, Idq = 280mA, Vg = -2.9V (Typ.)

MECGaNSCTRMX is a 0.25µm GaN based Rx chain (CW)

MMIC integrating the main functions of an X-
 Gain: 15 dB
Band T/R Module Frontend: HPA, TR Switch
 NF: < 3.0 dB (2.5 dB midband)
and LNA.
 P1dB: 22 dBm
Referring to the present X-band T/R module,  Psat: 26 dBm
MECGaNSCTRMX allows a size reduction of  Pin_Max: 26 dBm
about 40% keeping the same output power  Bias: Vd = 10 V, Idq = 80 mA, Vg = -2.8V (Typ.)
level (≈ 39 dBm).

The MECGaNSCTRMX MMIC also has a Typical Applications

competitive noise performance in receiving
mode (≈ 2.5 dB) because it allows for limiter  Commercial and Military Radar
elimination in the receiver frontend.
Functional Blocks
During receiving phase it is capable of
working in safe operation up to 26 dBm of VG1 VD1 VG2 VD2

CW overdrive power; in addition, the high

isolation provided by the Switch when RFin
receiving path is disconnected allows to handle TX
up to 40 dBm with LNA in Standby mode. ANT

RFout
RX

VDL2 VGL2 VDL1 VGL1 VC2 VC1

Preliminary Data Sheet Rev. B -25/01/13

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MEC – Microwave Electronics for Communications
www.mec-mmic.com Rev. A 07/05/15
 MECGaNSCTRMX
X-Band GaN Single-Chip Transceiver Frontend

Main Characteristics - Tx Mode

Test Conditions: Tbase_plate = 25°C , Vd = 30 V, Idq =280 mA - Pulsed: 330µs - 10%
Parameter Min Typ Max Unit
Operating frequency 8.6 11.2 GHz
Small Signal Gain 22.5 25.5 dB
Input Return Loss -8 dB
Output Return Loss -10 dB
Output Power at PAE max. (Pin=23 dBm) 38 dBm
Output Power at Saturation (Pin = 26 dBm) 39 dBm
PAE max. (Pin=23 dBm) 26 %
PAE at Saturation (Pin = 26 dBm) 24 %
Isolation ANT-Rx 40 dB
Drain Supply Voltage 30 V
Supply Quiescent Drain Current 0.28 A
Supply Drain Current at PAE max. (Pin=23 dBm) 0.9 A
Supply Drain Current at Saturation (Pin = 26 dBm) 1.0 A

Main Characteristics - Rx Mode

Test Conditions: Tbase_plate = 25°C , Vd = 10 V, Idq =80 mA - CW
Parameter Min Typ Max Unit
Operating frequency 8.6 11.2 GHz
Small Signal Gain 15 16 dB
Noise Figure 2.5 3.0 dB
Input Return Loss -20 -12 dB
Output Return Loss -15 -10 dB
Output Power at 1 dB of Gain Compression (Pin=8 dBm) 22 dBm
Output Power at Saturation (Pin=17 dBm) 25 26 dBm
Overdrive Input Power (CW) 26 dBm
Overdrive Gain Compression Level 15 dB
Drain Supply Voltage 10 V
Supply Quiescent Drain Current 80 mA
DC Power Consumption 0.8 W
DC Power Consumption at 1 dB of Gain Compr. 1 W

Control Voltages
VC1 = 0V VC2 = -30V Tx Mode
VC1 = -30V VC2 = 0V Rx Mode

Preliminary Data Sheet Rev. B -25/01/13

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 MECGaNSCTRMX
X-Band GaN Single-Chip Transceiver Frontend

Typical Performance - Tx Mode

Test Conditions: Tbase_plate = 25°C , Vd = 30 V, Idq =280 mA - Pulsed: 330µs - 10% - Control: VC1=0V, VC2=-30V

S-Parameters Vs. Frequency Isolation Antenna – RFout at Rx during Tx mode at

0 three different Bias conditions of the LNA
0
-10 0
S21 LNA ON
(VD=10V – VG=Typ.)
S21 [dB]

-10 -10
Isolation ANT-Rx

-20 LNA ON
0 -20 LNA ON

Isolation ANT-Rx
Isolation ANT-Rx

-20
-30 LNA OFF
-10 LNA ON
-30
S11
-30
-40 LNA OFF
(VD=0V – VG=-5V)
Isolation ANT-Rx

-20 S11 & S22 [dB] LNA OFF

-40
-40
-50 LNA STANDBY
-30 LNA OFF

S22 -50
-60
-50 -40 LNA STANDBY
LNA STANDBY
-60
-70
-60 -50 LNA STANDBY
(VD=0V – VG=Typ.)
8 9 -70 10 11 12
-60
-70 8
Frequency [GHz]9 10 11 12
Frequency [ GHz] 8 -70 9 10 11
Frequency [GHz] 12
8 9 Frequency 10
[GHz] 11 12
Frequency [GHz]
Pout and PAE Vs. Pin @ 8.6 GHz Gain and Id Vs. Pin @ 8.6 GHz
45 45 30 3.0
40 40
25 2.5
35 Pout 35 Gain

Drain Current [A]

Ouptput Power [dBm]

30 30 20 2.0
PAE [%]

25 25
15 1.5
Gian [dB]

20 20
15
PAE 15 10 1.0
ID
10 10
5 0.5
5 5
0 0 0 0.0
-6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power [dBm] Input Power [dBm]

Pout and PAE Vs. Pin @ 9.4 GHz Gain and Id Vs. Pin @ 9.4 GHz
45 45 30 3.0
40 40
25 2.5
35 Pout 35
Gain
Ouptput Power [dBm]

Drain Current [A]

30 30 20 2.0
PAE [%]

Gain [dB]

25 25
15 1.5
20 20
PAE
15 15 10 1.0
ID
10 10
5 0.5
5 5
0 0 0 0.0
-6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power [dBm] Input Power [dBm]

Preliminary Data Sheet Rev. B -25/01/13

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MEC – Microwave Electronics for Communications
www.mec-mmic.com Rev. A 07/05/15
 MECGaNSCTRMX
X-Band GaN Single-Chip Transceiver Frontend

Typical Performance - Tx Mode

Test Conditions: Tbase_plate = 25°C , Vd = 30 V, Idq =280 mA - Pulsed: 330µs - 10% - Control: VC1=0V, VC2=-25V

Pout and PAE Vs. Pin @ 10.0 GHz Gain and Id Vs. Pin @ 10.0 GHz
45 45 30 3.0
40 40
25 2.5
35 Pout 35
Ouptput Power [dBm]

Drain Current [A]

30 30 20
Gain 2.0

PAE [%]

Gain [dB]
25 25
15 1.5
20 20
PAE
15 15 10 1.0
10 10 ID
5 0.5
5 5
0 0 0 0.0
-6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power [dBm] Input Power [dBm]

Pout and PAE Vs. Pin @ 10.6 GHz Gain and Id Vs. Pin @ 10.6 GHz
45 45 30 3.0
40 40
25 2.5
35 Pout 35 Gain
Ouptput Power [dBm]

Drain Current [A]

30 30 20 2.0
PAE [%]

25 25
15 1.5
Gain [dB]

20 20
PAE
15 15 10 1.0
ID
10 10
5 0.5
5 5
0 0 0 0.0
-6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power [dBm] Input Power [dBm]

Pout and PAE Vs. Pin @ 11.2 GHz Gain and Id Vs. Pin @ 11.2 GHz
45 45 30 3.0
40 40
25 2.5
35 Pout 35
Gain
Ouptput Power [dBm]

Drain Current [A]

30 30 20 2.0
PAE [%]

25 25
Gain [dB]

15 1.5
20 PAE 20
15 15 10 ID 1.0
10 10
5 0.5
5 5
0 0 0 0.0
-6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power [dBm] Input Power [dBm]

Preliminary Data Sheet Rev. B -25/01/13

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MEC – Microwave Electronics for Communications
www.mec-mmic.com Rev. A 07/05/15
 MECGaNSCTRMX
X-Band GaN Single-Chip Transceiver Frontend

Typical Performance - Tx Mode

Test Conditions: Tbase_plate = 25°C , Vd = 30 V, Idq =280 mA - Pulsed: 330µs - 10% - Control: VC1=0V, VC2=-30V

Pout and PAE Vs. Frequency @ PAEmax Gain and Id Vs. Frequency @ PAEmax
Pin=23 dBm Pin=23 dBm
42 42 18 2.0
40 40 16 1.8
38 38 14 1.6
Output Power [dBm]

Drain Current [A]

36 36 Gain
Pout 12 1.4
34 34

Gain [dB]
PAE [%]
10 1.2
32 32
30 30 8 1.0
28 28 6 0.8
26 26 4 ID 0.6
24 24
PAE 2 0.4
22 22
20 20 0 0.2
8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 10.6 10.8 11.0 11.2
8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 10.6 10.8 11.0 11.2
Frequency [GHz] Frequency [GHz]

Pout and PAE Vs. Frequency @ Saturation Gain and Id Vs. Frequency @ Saturation
Pin=26 dBm Pin=26 dBm
42 42 18 2.0
40 40 16 1.8
38 38 Gain
14 1.6
Output Power [dBm]

Pout

Drain Current [A]

36 36
12 1.4
34 34
Gain [dB]
PAE [%]

32 32 10 1.2
30 30 8 1.0
28 28 6 ID 0.8
26 26
4 0.6
24 24
22 22 2 0.4
PAE
20 20 0 0.2
8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 10.6 10.8 11.0 11.2 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 10.6 10.8 11.0 11.2
Frequency [GHz] Frequency [GHz]

Pout Vs. Compression Compression Vs. Frequency @ Saturation and PAEmax

Serie1 9.4GHz 10.0GHz 10.6GHz 11.2GHz Comp. @ Psat Comp. @ PAEmax
18
45
16
40
Output Power [dBm]

14
Compression [dB]

35 12
30 10
25 8
6
20
4
15
2
10
0
-2 0 2 4 6 8 10 12 14 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 10.6 10.8 11.0 11.2
Compression [dB] Frequency [GHz]

Preliminary Data Sheet Rev. B -25/01/13

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MEC – Microwave Electronics for Communications
www.mec-mmic.com Rev. A 07/05/15
 MECGaNSCTRMX
X-Band GaN Single-Chip Transceiver Frontend

Typical Performance - Rx Mode

Test Conditions: Tbase_plate = 25°C , Vd = 10 V, Idq =80 mA - CW - Control: VC1=-30V, VC2=0V

S-Parameters and Noise Figure Vs. Frequency

S21 [dB]

S21
S22

S11 & S22 [dB]

Noise Figure [dB]
S11

NF

Frequency [dB]
Frequency [dB]

Pout and Gain Vs. Pin @ 8.6 GHz Pout and Gain Vs. Pin @ 9.4 GHz
30 30 30 30

25 25 25 25
Ouptput Power [dBm]
Ouptput Power [dBm]

Pout Pout

Gain [dB]
Gain [dB]

20 20 20 20

15 15 15 15

Gain Gain
10 10 10 10

5 5 5 5
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
Input Power [dBm] Input Power [dBm]

Pout and Gain Vs. Pin @ 10.6 GHz Pout and Gain Vs. Pin @ 11.2 GHz
30 30 30 30

25 25 25 25
Ouptput Power [dBm]
Ouptput Power [dBm]

Pout Pout
Gain [dB]

20 20
Gain [dB]

20 20

15 15 15 15
Gain
Gain
10 10 10 10

5 5 5 5
-8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22
Input Power [dBm] Input Power [dBm]

Preliminary Data Sheet Rev. B -25/01/13

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MEC – Microwave Electronics for Communications
www.mec-mmic.com Rev. A 07/05/15
 MECGaNSCTRMX
X-Band GaN Single-Chip Transceiver Frontend

Typical Performance - Rx Mode

Test Conditions: Tbase_plate = 25°C , Vd = 10 V, Idq =80 mA - CW - Control: VC1=-30V, VC2=0V

Pout and Gain Vs. Frequency @ P1dB Pout and Gain Vs. Frequency @ Saturation
(Pin=8dBm) (Pin=17dBm)
30 30 30 30

25 25 25 25
Output Power [dBm]

Pout Pout

Output Power [dBm]

20 20

Gain [dB]
20 20

Gain [dB]
15 15 15 15
Gain
10 10 10 10

Gain
5 5 5 5
8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 10.6 10.8 11.0 11.2 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 10.6 10.8 11.0 11.2
Frequency [GHz]
Frequency [GHz]

Preliminary Data Sheet Rev. B -25/01/13

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 MECGaNSCTRMX
X-Band GaN Single-Chip Transceiver Frontend

Bond Pad Configuration & Assembly Recommendations

 A tolerance of ± 35µm has to be considered for
chip dimensions
0 215 365 753 1290 1740 1890 2210 2880 3000
3000
G1R G1 GND D1 G2 G2R GND
 Chip Thickness is 70 µm ± 10 µm
D2
1 2 3 4 5 6
7 8  RF Pads= 100µm x 150µm
 DC Pads= 100µm x 100µm
 DC Pad (4,8)= 200µm x 100µm
INTX

2010
INTx

SCTX Bond
Symbol Description
Pad #
INTx INTx Tx-Mode Input RF Port
Tx-Mode Output RF Port
ANT ANT
1070 OUTRx ANT
Rx-Mode Input RF Port
OUTRx OUTRx Rx-Mode Output RF Port
ANT 840
HPA - Gate Supply
OUTRX

2,5 G1, G2
Voltage
HPA - Drain Supply
4,8 D1, D2
11 10 9
Voltage
14 13 12
9,10 VC1, VC2 Tx/Rx Control Voltages
VC1
VC2

D2L G2L D1L G1L

0 0
LNA - Gate Supply
0 230 850 1380 1780 2260 2540 3000 11, 13 G1L, G2L
Voltage
LNA - Drain Supply
12, 14 D1L, D2L
Voltage

VGT VDT VGT VDT External

Bond Pad # Connection
Components

C2 C2
INTx, ANT 2 Bonding Wires
and OUTRx L_bond = 0.3nH
C1 C1 C1 C1
G1R G1 GND D1 G2 G2R GND
2, 5 C1 = 100pF/10V
1 2 3 4 5 6
D2

8 L_bond ≤ 1 nH
7
Vg - HPA C2 = 10nF/10V
INTX

4, 8
2*L_bond ≤ 1 nH
INTx
C1 = 100pF/50V
SCTX Vd - HPA

11, 13 C1 = 100pF/10V
OUTRx ANT
L_bond ≤ 1 nH
ANT Vg - LNA C2 = 10nF/10V
OUTRX

12, 14 C1 = 100pF/25V
14 13 12 11 10 9
L_bond ≤ 1 nH
Vd - LNA C2 = 10nF/25V
VC2

VC1

D2L G2L D1L G1L

C1 C1 C1 C1
No external
C2 C2 C2 C2 components required
9, 10
L_bond ≤ 1nH (Internal Series
VC1, VC2
Resistance: Rs=4kΩ)
VDR VGR VDR VGR VC2 VC1

Preliminary Data Sheet (Internal

Rev. Series
B -25/01/13
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Resistance: Rs=4kΩ)
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 MECGaNSCTRMX
X-Band GaN Single-Chip Transceiver Frontend

 Eutectic Die bond using AuSn (80/20) solder is recommended.

 Great care must be used for thermal dimensioning.
 The backside of the die is the Source (ground) contact.
 Thermosonic ball or wedge bonding are the preferred connection methods.
 Gold wire must be used for connections.

Bias Procedure - Tx Mode

Bias-Up Bias-Down
1. Vg-HPA and Vg-LNA set to - 5 V. 1. Turn off RF signal.
2. VC1 set to 0V and VC2 set to -25V. 2. Reduce Vg-HPA to -5 V (Id0 ≈ 0 mA).
3. Vd-LNA set to 0V. 3. Set Vd-HPA to 0 V.
4. Vd-HPA set from 0V up to 30V. 4. Turn off Vd-HPA and Vd-LNA.
5. Adjust Vg-HPA until quiescent Id is 5. Turn off Vg-HPA and Vg-LNA.
280 mA (Vg = -2.9 V Typical). 6. Turn off VC1 and VC2.
6. Apply RF signal.

Bias Procedure - Rx Mode

Bias-Up Bias-Down
1. Vg-LNA and Vg-HPA set to - 5 V 7. Turn off RF signal.
2. VC1 set to -25V and VC2 set to 0V. 8. Reduce Vg-LNA to -5 V (Id0 ≈ 0 mA).
3. Vd-HPA set to 0V. 9. Set Vd-LNA to 0 V.
4. Vd-LNA set from 0V up to 10V. 10. Turn off Vd-LNA and Vd-HPA.
5. Adjust Vg-LNA until quiescent Id is 80 11. Turn off Vg-LNA and Vg-HPA.
mA (Vg = -2.8 V Typical). 12. Turn off VC1 and VC2.
6. Apply RF signal.

Preliminary Data Sheet Rev. B -25/01/13

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 MECGaNSCTRMX
X-Band GaN Single-Chip Transceiver Frontend

Contact Information
For additional technical Information and Requirements:
Email: [email protected] Tel: +39 0516333403

For sales Information and Requirements:

Email: [email protected] Tel: +39 0637511124

Notice
The furbished information is believed to be reliable. However, performances and specifications contained herein
are based on preliminary characterizations and then susceptible to possible variations. On the basis of customer
requirements the product can be tested and characterized in specific operating conditions and, if needed, tuned to
meet custom specifications.
The contents of this document are under the copyright of MEC srl. It is released by MEC srl on condition that it
shall not be copied in whole, in part or otherwise reproduced (whether by photographic, reprographic, or any other
method) and the contents thereof shall not be divulged to any person other than inside the company at which has
been provided by MEC.

Preliminary Data Sheet Rev. B 25/01/13

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MEC – Microwave Electronics for Communications
www.mec-mmic.com Rev. A 07/05/15