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Sample Problems and Solution - 2

This document contains 7 problems related to solar energy systems and semiconductor physics: 1) Calculate the temperature at which a state 0.3 eV below the Fermi level is 2% unoccupied, finding the temperature is 894K. 2) For a semiconductor with given parameters, calculate the intrinsic Fermi level position finding it is 0.0298 eV above the midgap. 3) Calculate the intrinsic carrier concentration in Ge given the same parameters as Si, finding it would be 6000 times larger due to the smaller bandgap.

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166 views

Sample Problems and Solution - 2

This document contains 7 problems related to solar energy systems and semiconductor physics: 1) Calculate the temperature at which a state 0.3 eV below the Fermi level is 2% unoccupied, finding the temperature is 894K. 2) For a semiconductor with given parameters, calculate the intrinsic Fermi level position finding it is 0.0298 eV above the midgap. 3) Calculate the intrinsic carrier concentration in Ge given the same parameters as Si, finding it would be 6000 times larger due to the smaller bandgap.

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© © All Rights Reserved
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ME5207 Solar Energy Systems

AY2018-19

1. Determine the temperature at which an energy level located at 0.3 eV below Fermi energy is
2% unoccupied by an electron.

Solution:

The probability that a state being occupied is

f E  
1
E  EF
1  exp 
 kT 

Given: The probability that an energy state E is empty


= 0.02

i.e. 1-f(E)= 0.02 OR f(E)= 0.98

E-Ef = -0.3 eV
k = 8.625×10-5 eV/K and
T=?

 
1
0.98 
1  exp  0.3
8.25 105  T
 T  894 K

2. For a particular semiconductor material, T = 300K. NC = 1×1018 cm-3, and NV = 1×1019


cm-3. Let Eg = 1.45 eV. Determine the position of the intrinsic Fermi level with respect to
𝐸𝑣 +𝐸𝑐
center of the band gap (Emidgap = ).
2

Solution:

1  Nv 
Intrinsic Fermi level, Ei  Emidgap  kT ln  
2  Nc 

Given, Nc = 1×1018 cm-3; Nv = 1×1019 cm-3 & kT = 0.0259 eV

1
 19 
Ei  E midgap 
1
0.0259ln  1018 
2  10 
Ei  E midgap  0.0298eV
Ei  E midgap  0.0298eV
Therefore,intrinsic Fermilevel is 0.0298 eV above the midgap

3. Germanium has the same crystal structure as silicon but its band gap is 0.67 eV. If the
total density of states in the conduction band (Nc) and in the valence band (Nv) are the
same as they are for silicon, what value of ni would you expect for Ge at 300K?
Assume ni = 1010/cm3 and Eg = 1.12eV.

Solution:

This is 6000 times larger because the band-gap is smaller.

2
4. A semiconductor has NC = 1019 cm-3, Nv = 5 x 1018 cm-3 and Eg = 2 eV doped with 1017
cm-3 donors (fully ionized)
(a) Calculate the intrinsic, electron and hole concentrations at 627oC
(b) Where is EF located relative to Ei?
(c) Sketch the simplified band diagram, showing the position of EF (assume the Ei is
nearly at the midgap).

Solution:

3
5. Consider a GaAs semiconductor illuminated with photons of energy 1.65 eV.
The absorption coefficient at 1.65 eV is 104 cm-1.
(a) Determine the thickness of the material so that 75% of the energy is
absorbed.
(b) Determine the thickness so that 75% of the energy is transmitted.

Solution:

Given: At hv = 1.65 eV, α = 104 cm-1.

(a) Let ‘t’ be the thickness of the sample so that 75% of the energy is absorbed.
Intensity of light absorbed = 0.75 I(0) , where I(0) is the intensity of light just below the
front surface.
Therefore, intensity of the light transmitted, I(t) = I(0)- 0.75 I(0)=0.25 I(0)

We have, I  t   I  0  e  t
 0.25I  0   I  0   e10 t
4

 t  1.39  m

(b) Let ‘t’ be the thickness of the sample so that 75% of the energy is transmitted.

Therefore, intensity of the light transmitted, I(t) = 0.75 I(0)

We have, I  t   I  0  e  t
 0.75 I  0   I  0   e 10 t
4

 t  0.29  m

4
6. A specimen of germanium is doped with 0.1 atomic percent of arsenic (pentavalent atom).
Assuming that at room temperature all the arsenic atoms are ionized, find the electron and
hole concentration in germanium. The intrinsic carrier density in germanium at room
temperature is 2.37×1019 m-3. The number density of germanium atom is 4.41×1028 m-3.

Solution:

Given: Crystal –Ge impurity = 0.1%, ni = 2.37×1019 m-3; density of Ge atom = 4.41×1028 m-3

n =? and p = ?

Since, all the arsenic atoms are ionized, NA= 0 & n = ND

0.1 4.4110 28
n  ND   4.4110 25 m 3
100
Thus, and
ni2 5.62 1038
p  1.27 1013 m 3
N D 4.4110 20

7. Figure shows the directions of electron diffusion flux and current densities in a rectangular bar of
Silicon and x is measured in μm. The electron concentration varies linearly from 1×1017 to 7×1016
cm-3 between the two ends at T = 300 K. Calculate the diffusion current density, if the electron
mobility is, µn =9.62×103 cm2 V-1sec-1

Electron flux B
A
Electron diffusion

x  0current density x  25

Answer:

 480 A / cm 2

5
8. Sketch the equilibrium band diagram which results while bringing together the illustrated metal
and lightly doped semiconductor in the following figure. Indicate qVbi where Vbi is the built–in
potential.

Vacuum level

ФS
Фm EC
Eg
Ei
EFs
EFm EV
semiconductor
metal

Figure

In the figure Фm and ФS are the work functions of metal and semiconductor respectively.

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